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1.
Kinga Lasek Jingfeng Li Sadhu Kolekar Paula Mariel Coelho Lu'an Guo Min Zhang Zhiming Wang Matthias Batzill 《Surface Science Reports》2021,76(2):100523
Layered transition metal dichalcogenides (TMDs) are a diverse group of materials whose properties vary from semiconducting to metallic with a variety of many body phenomena, ranging from charge density wave (CDW), superconductivity, to Mott-insulators. Recent interest in topologically protected states revealed also that some TMDs host bulk Dirac- or Wyle-semimetallic states and their corresponding surface states. In this review, we focus on the synthesis of TMDs by vacuum processes, such as molecular beam epitaxy (MBE). After an introduction of these preparation methods and categorize the basic electronic properties of TMDs, we address the characterization of vacuum synthesized materials in their ultrathin limit-mainly as a single monolayer material. Scanning tunneling microscopy and angle resolved photoemission spectroscopy has revealed detailed information on how monolayers differ in their properties from multi-layer and bulk materials. The status of monolayer properties is given for the TMDs, where data are available. Distinct modifications of monolayer properties compared to their bulk counterparts are highlighted. This includes the well-known transition from indirect to direct band gap in semiconducting group VI-B TMDs as the material-thickness is reduced to a single molecular layer. In addition, we discuss the new or modified CDW states in monolayer VSe2 and TiTe2, a Mott-insulating state in monolayer 1T-TaSe2, and the monolayer specific 2D topological insulator 1T′-WTe2, which gives rise to a quantum spin Hall insulator. New structural phases, that do not exist in the bulk, may be synthesized in the monolayer by MBE. These phases have special properties, including the Mott insulator 1T-NbSe2, the 2D topological insulators of 1T′-MoTe2, and the CDW material 1T-VTe2. After discussing the pure TMDs, we report the properties of nanostructured or modified TMDs. Edges and mirror twin grain boundaries (MTBs) in 2D materials are 1D structures. In group VI-B semiconductors, these 1D structures may be metallic and their properties obey Tomonaga Luttinger quantum liquid behavior. Formation of Mo-rich MTBs in Mo-dichalcogenides and self-intercalation in between TMD-layers are discussed as potential compositional variants that may occur during MBE synthesis of TMDs or may be induced intentionally during post-growth modifications. In addition to compositional modifications, phase switching and control, in particular between the 1H and 1T (or 1T′) phases, is a recurring theme in TMDs. Methods of phase control by tuning growth conditions or by post-growth modifications, e.g. by electron doping, are discussed. The properties of heterostructures of TMD monolayers are also introduced, with a focus on lateral electronic modifications in the moiré-structures of group VI-B TMDs. The lateral potential induced in the moiré structures forms the basis of the currently debated moiré-excitons. Finally, we review a few cases of molecular adsorption on nanostructured monolayer TMDs. This review is intended to present a comprehensive overview of vacuum studies of fundamental materials' properties of TMDs and should complement the investigations on TMDs prepared by exfoliation or chemical vapor deposition and their applications. 相似文献
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Monolayer MoS2 of high mobility grown on SiO2 substrate by two-step chemical vapor deposition
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Jia-Jun Ma 《中国物理 B》2022,31(8):88105-088105
We report a novel two-step ambient pressure chemical vapor deposition (CVD) pathway to grow high-quality MoS2 monolayer on the SiO2 substrate with large crystal size up to 110 μm. The large specific surface area of the pre-synthesized MoO3 flakes on the mica substrate compared to MoO3 powder could dramatically reduce the consumption of the Mo source. The electronic information inferred from the four-probe scanning tunneling microscope (4P-STM) image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements. Furthermore, the direct van der Pauw transport also confirms its relatively high carrier mobility. Our study provides a reliable method to synthesize high-quality MoS2 monolayer, which is confirmed by the direct 4P-STM measurement results. Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides (TMDs) on the SiO2 substrate and is essential to further development of the TMDs-related integrated devices. 相似文献
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《中国物理 B》2021,30(5):57801-057801
Transition metal dichalcogenides(TMDs), being valley selectively, are an ideal system hosting excitons. Stacking TMDs together to form heterostructure offers an exciting platform to engineer new optical and electronic properties in solid-state systems. However, due to the limited accuracy and repetitiveness of sample preparation, the effects of interlayer coupling on the electronic and excitonic properties have not been systematically investigated. In this report, we study the photoluminescence spectra of bilayer-bilayer MoS_2/WS_2 heterostructure with a type Ⅱ band alignment. We demonstrate that thermal annealing can increase interlayer coupling in the van der Waals heterostructures, and after thermally induced band hybridization such heterostructure behaves more like an artificial new solid, rather than just the combination of two individual TMD components. We also carry out experimental and theoretical studies of the electric controllable direct and indirect infrared interlayer excitons in such system. Our study reveals the impact of interlayer coupling on interlayer excitons and will shed light on the understanding and engineering of layer-controlled spin-valley configuration in twisted van der Waals heterostructures. 相似文献
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石墨烯-六方氮化硼面内异质结构因可调控石墨烯的能带结构而受到广泛关注. 本文介绍了在超高真空体系内, 利用两步生长法在两类对石墨烯分别有强和弱电子掺杂的基底, 即Rh(111)和Ir(111)上制备石墨烯-六方氮化硼单原子层异质结构. 通过扫描隧道显微镜及扫描隧道谱对这两种材料的形貌和电子结构进行研究发现: 石墨烯和六方氮化硼倾向于拼接生长形成单层的异质结构, 而非形成各自分立的畴区; 在拼接边界处, 石墨烯和六方氮化硼原子结构连续无缺陷; 拼接边界多为锯齿形型, 该实验结果与密度泛函理论计算结果相符合; 拼接界面处的石墨烯和六方氮化硼分别具有各自本征的电子结构, 六方氮化硼对石墨烯未产生电子掺杂效应. 相似文献
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Two-dimensional(2D) materials, e.g., graphene, transition metal dichalcogenides(TMDs), and black phosphorus(BP), have demonstrated fascinating electrical and optical characteristics and exhibited great potential in optoelectronic applications. High-performance and multifunctional devices were achieved by employing diverse designs, such as hybrid systems with nanostructured materials, bulk semiconductors and organics, forming 2D heterostructures. In this review,we mainly discuss the recent progress of 2D materials in high-responsive photodetectors, light-emitting devices and single photon emitters. Hybrid systems and van der Waals heterostructure-based devices are emphasized, which exhibit great potential in state-of-the-art applications. 相似文献
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Kai Ren Minglei Sun Yi Luo Sake Wang Yujing Xu Jin Yu Wencheng Tang 《Physics letters. A》2019,383(13):1487-1492
Four vertical heterostructures based on two-dimensional transition-metal dichalcogenides (TMDs) – MoS2/GeC, MoSe2/GeC, WS2/GeC, and WSe2/GeC, were studied by density functional theory calculations to investigate their structure, electronic characteristics, principle of photogenerated electron–hole separation, and optical-absorption capability. The optimized heterostructures were formed by van der Waals (vdW) forces and without covalent bonding. Their most stable geometric configurations and band structures display type-II band alignment, which allows them to spontaneously separate photogenerated electrons and holes. The charge difference and built-in electric field across the interface of these vdW heterostructures also contribute to preventing the photogenerated electron–hole recombination. Finally, the high optical absorption of the four TMD-based vdW heterostructures in the visible and near-infrared regions indicates their suitability for photocatalytic, photovoltaic, and optical devices. 相似文献
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Yang Ni Yan-Dong Guo Xiao-Hong Yan Hong-Li Zeng Ying Zhang Xin-Yu Chen Xue-Yang Shen 《Physics letters. A》2019,383(14):1636-1641
Due to the structure of three stacked layers, monolayer transition-metal dichalcogenides (TMDs) is different from graphene. Creating atomically flat graphene-like edges in them has long been expected, which is crucial to the modulation of electronic structures in two-dimensional systems. Recently, by thermal annealing, Chen et al. [21] successfully synthesized atomically flat Mo-terminated edge in monolayer MoS2. Inspired by this, through first-principles calculations, we studied the electronic and transport properties of typical TMD monolayers with transition atom-terminated flat zigzag edges, i.e., ScS2, VS2, CrS2, FeS2, NiS2, MoS2 and WS2. It is found that the nanoribbons with and without flat edges are both metallic. Interestingly, the vacancy in the flat edge could open a transmission gap at the Fermi level in the ScS2 ribbon, and trigger a metal-semiconductor transition. Further analysis shows that, the opening of bandgap around the Fermi level induced by the specific pattern of vacancies is the mechanism behind, which could be used as an modulating method for electronic structures. We believe our results are quite beneficial for the development of many other monolayer transition-metal dichalcogenides configurations, showing great application potential. 相似文献
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Interface engineering of transition metal dichalcogenide/GaN heterostructures: Modified broadband for photoelectronic performance
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The GaN-based heterostructures are widely used in optoelectronic devices, but the complex surface reconstructions and lattice mismatch greatly limit the applications. The stacking of two-dimensional transition metal dichalcogenide (TMD = MoS2, MoSSe and MoSe2) monolayers on reconstructed GaN surface not only effectively overcomes the larger mismatch, but also brings about novel electronic and optical properties. By adopting the reconstructed GaN (0001) surface with adatoms (N-ter GaN and Ga-ter GaN), the influences of complicated surface conditions on the electronic properties of heterostructures have been investigated. The passivated N-ter and Ga-ter GaN surfaces push the mid-gap states to the valence bands, giving rise to small bandgaps in heterostructures. The charge transfer between Ga-ter GaN surface and TMD monolayers occurs much easier than that across the TMD/N-ter GaN interfaces, which induces stronger interfacial interaction and larger valence band offset (VBO). The band alignment can be switched between type-I and type-II by assembling different TMD monolayers, that is, MoS2/N-ter GaN and MoS2/Ga-ter GaN are type-II, and the others are type-I. The absorption of visible light is enhanced in all considered TMD/reconstructed GaN heterostructures. Additionally, MoSe2/Ga-ter GaN and MoSSe/N-ter GaN have larger conductor band offset (CBO) of 1.32 eV and 1.29 eV, respectively, extending the range from deep ultraviolet to infrared regime. Our results revel that the TMD/reconstructed GaN heterostructures may be used for high-performance broadband photoelectronic devices. 相似文献
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The impact of interfaces and heterojuctions on the electronic and thermoelectric transport properties of materials is discussed herein. Recent progress in understanding electronic transport in heterostructures of 2D materials ranging from graphene to transition metal dichalcogenides, their homojunctions (grain boundaries), lateral heterojunctions (such as graphene/MoS2 lateral interfaces), and vertical van der Waals heterostructures is reviewed. Work on thermopower in 2D heterojunctions, as well as their applications in creating devices such as resonant tunneling diodes (RTDs), is also discussed. Last, the focus turns to work in 3D heterostructures. While transport in 3D heterostructures has been researched for several decades, here recent progress in theory and simulation of quantum effects on transport via the Wigner and non‐equilibrium Green's functions approaches is reviewed. These simulation techniques have been successfully applied toward understanding the impact of heterojunctions on transport properties and thermopower, which finds applications in energy harvesting, and electron resonant tunneling, with applications in RTDs. In conclusion, tremendous progress has been made in both simulation and experiments toward the goal of understanding transport in heterostructures and this progress will soon be parlayed into improved energy converters and quantum nanoelectronic devices. 相似文献
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《中国光学快报(英文版)》2019,(12)
Due to the composition-dependent properties of two-dimensional(2D) transition metal dichalcogenides(TMDs), alloying of existing dissimilar TMDs architecture is a novel and controllable route to tailor crystal structures with superior optical and optoelectronic properties. Here, we reported the hexagonal-phase WSe_(1.4)Te_(0.6) alloy can enable great promise for enhanced saturable absorption response exceeding the parent component WSe_2 and WTe_2, with larger modulation depth and lower saturable intensity. These advantages allowed the 1064 nm passively Q-switched lasers based on WSe_(1.4)Te_(0.6) to be more efficient, with pulse duration narrowed to 45%, and slope efficiency increased by 232%. Our findings highlighted the appropriate alloying of TMDs as an effective strategy for development of saturable absorbers. 相似文献
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Transition metal dichalcogenide(TMD)monolayers attract great attention due to their specific structural,electronic and mechanical properties.The formation of their lateral heterostructures allows a new degree of flexibility in engineering electronic and optoelectronic dervices.However,the mechanical properties of the lateral heterostructures are rarely investigated.In this study,a comparative investigation on the mechanical characteristics of 1H,IT'and 1H/1T'heterostructure phases of different TMD monolayers including molybdenum disulfide(M0S2)molybdenum diselenide(MoSe2),Tungsten disulfide(WS2),and Tungsten diselenide(WSe2)was conducted by means of density functional theory(DFT)calculations.Our results indicate that the impact of the lateral heterostructures has a relatively weak mechanical strength for all the TMD monolayers.The significant correlation bet ween the mechanical properties of the TMD monolayers and their structural phases can be used to tune their stiffness of the materials.Our findings,therefore,suggest a novel strategy to manipulate the mechanical characteristics of TMDs by engineering their structural phases for their practical applications. 相似文献
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《Physics letters. A》2020,384(21):126532
Based on the first principles calculations, we have systematically investigated the electronic structures of Cu2Si/C2N van der Waals (vdW) heterostructures. We discovered that the electronic structures of Cu2Si and C2N monolayers are preserved in Cu2Si/C2N vdW heterostructures. There is a transition from the n-type Schottky contact to Ohmic contact when the interfacial distance decreases from 4.4 to 2.7 Å, which indicates that the Schottky barrier can be tuned effectively by the interfacial distance. Meanwhile, we find that the carrier concentration between the Cu2Si and C2N interfaces in the vdW heterostructures can be tuned. These findings suggest that the Cu2Si/C2N vdW heterostructure is a promising candidate for application in future nanoelectronics and optoelectronics devices. 相似文献
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A facile and efficient dry transfer technique for two-dimensional Van der Waals heterostructure
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Two-dimensional(2D) Van der Waals heterostructures have aroused extensive concerns in recent years. Their fabrication calls for facile and efficient transfer techniques for achieving well-defined structures. In this work, we report a simple and effective dry transfer method to fabricate 2D heterostructures with a clean interface. Using Propylene Carbonate(PC)films as stamps, we are able to pick up various 2D materials flakes from the substrates and unload them to the receiving substrates at an elevated temperature. Various multilayer heterostructures with ultra-clean interfaces were fabricated by this technique. Furthermore, the 2D materials can be pre-patterned before transfer so as to fabricate desired device structures,demonstrating a facile way to promote the development of 2D heterostructures. 相似文献
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Controlled vapor growth of 2D magnetic Cr_2Se_3 and its magnetic proximity effect in heterostructures
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《中国物理 B》2021,30(9):97601-097601
Two-dimensional(2 D) magnetic materials have aroused tremendous interest due to the 2 D confinement of magnetism and potential applications in spintronic and valleytronic devices. However, most of the currently 2 D magnetic materials are achieved by the exfoliation from their bulks, of which the thickness and domain size are difficult to control, limiting the practical device applications. Here, we demonstrate the realization of thickness-tunable rhombohedral Cr_2Se_3 nanosheets on different substrates via the chemical vapor deposition route. The magnetic transition temperature at about 75 K is observed. Furthermore, van der Waals heterostructures consisting of Cr_2Se_3 nanosheets and monolayer WS_2 are constructed.We observe the magnetic proximity effect in the heterostructures, which manifests the manipulation of the valley polarization in monolayer WS_2. Our work contributes to the vapor growth and applications of 2 D magnetic materials. 相似文献
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通过第一性原理计算探讨了蓝磷烯与过渡金属硫化物MoTe2/WTe2形成范德瓦耳斯异质结的电子结构和光学性质,以及施加双轴应力对相关性质的影响.计算结果表明,形成BlueP/XTe2(X=Mo,W)异质结,二者能带排列为间接带隙type-Ⅱ并有较强的红外光吸收,同时屏蔽特性增强.随压缩应力增加,BlueP/XTe2转变为直接带隙type-Ⅱ能带排列最后转变为金属性;随拉伸应力增加,异质结转变为间接带隙type-Ⅰ能带排列.外加应力也能有效调控异质结的光吸收性质,随压缩应力增加吸收边红移,光吸收响应拓展至中红外光谱区且吸收系数增大;BlueP/MoTe2较BlueP/WTe2在中红外至红外光区间表现出更强的光吸收响应;静态介电常数ε1(0)大幅增加.结果表明,压缩应力对BlueP/MoTe2和BlueP/WTe2能带排列、光吸收特性均有显著的调控作用,其中BlueP/MoTe2对调控更敏感,这些特性也使BlueP/XTe2异质结在窄禁带中红外半导体材料及光电器件具有令人期待的应用价值. 相似文献
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Xueping Li Peize Yuan Lin Li Ting Liu Chenhai Shen Yurong Jiang Xiaohui Song Congxin Xia 《Frontiers of Physics》2023,18(1):13305
Constructing two-dimensional (2D) van der Waals heterostructures (vdWHs) can expand the electronic and optoelectronic applications of 2D semiconductors. However, the work on the 2D vdWHs with robust band alignment is still scarce. Here, we employ a global structure search approach to construct the vdWHs with monolayer MoSi2N4 and wide-bandgap GeO2. The studies show that the GeO2/MoSi2N4 vdWHs have the characteristics of direct structures with the band gap of 0.946 eV and type-II band alignment with GeO2 and MoSi2N4 layers as the conduction band minimum (CBM) and valence band maximum (VBM), respectively. Also, the direct-to-indirect band gap transition can be achieved by applying biaxial strain. In particular, the 2D GeO2/MoSi2N4 vdWHs show a robust type-II band alignment under the effects of biaxial strain, interlayer distance and external electric field. The results provide a route to realize the robust type-II band alignment vdWHs, which is helpful for the implementation of optoelectronic nanodevices with stable characteristics. 相似文献
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Two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers have currently been of immense interest in materials research because of their versatility, and tunable electronic and magnetic properties. In this study, we systematically studied the electronic and magnetic properties in pristine and hydrogenated 1T, 1T’, and 2H TMD monolayers. We found Group IV (Ti, Zr, and Hf), VI (Cr, Mo, and W), and X (Ni, Pd, and Pt) pristine TMD monolayers, respectively, mostly adopted 1T, 2H, and 1T as their stable structures, except for WTe2 which exhibits 1T’. The stable 1T’ structure only exists for pristine WTe2 and it had been identified as a topological insulator with a band gap of 0.11 eV. Upon hydrogenation, a structural phase transition occurred from 1T to 2H in Group IV, while for Group X, the stable structure remained 1T. For Group VI, the stable phase transitioned from 1T to 2H or 1T’ phases. Moreover, we found nineteen 2D magnetic materials through hydrogenation. Finally, further exploration of band topologies under hybrid functional calculations revealed that four of these identified magnetic monolayer structures exhibit quantum anomalous Hall effect. Our findings show that hydrogenated TMDs provide a new ground in searching for materials which have the potential for spintronics applications. 相似文献