Improving the device performances of two-dimensional semiconducting transition metal dichalcogenides: Three strategies

Two-dimensional (2D) semiconductors are emerging as promising candidates for the next-generation nanoelectronics. As a type of unique channel materials, 2D semiconducting transition metal dichalcogenides (TMDCs), such as MoS₂ and WS₂, exhibit great potential for the state-of-the-art field-effect transistors owing to their atomically thin thicknesses, dangling-band free surfaces, and abundant band structures. Even so, the device performances of 2D semiconducting TMDCs are still failing to reach the theoretical values so far, which is attributed to the intrinsic defects, excessive doping, and daunting contacts between electrodes and channels. In this article, we review the up-to-date three strategies for improving the device performances of 2D semiconducting TMDCs: (i) the controllable synthesis of wafer-scale 2D semiconducting TMDCs single crystals to reduce the evolution of grain boundaries, (ii) the ingenious doping of 2D semiconducting TMDCs to modulate the band structures and suppress the impurity scatterings, and (iii) the optimization design of interfacial contacts between electrodes and channels to reduce the Schottky barrier heights and contact resistances. In the end, the challenges regarding the improvement of device performances of 2D semiconducting TMDCs are highlighted, and the further research directions are also proposed. We believe that this review is comprehensive and insightful for downscaling the electronic devices and extending the Moore’s law.     

Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

Transition metal dichalcogenides(TMDCs) have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional(2D) materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other2 D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping,elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs.     

2D noncarbon materials-based nonlinear optical devices for ultrafast photonics [Invited]

Ultrafast lasers play an important role in a variety of applications ranging from optical communications to medical diagnostics and industrial materials processing. Graphene and other two-dimensional(2D) noncarbon materials, including topological insulators(TIs), transition metal dichalcogenides(TMDCs), phosphorene, bismuthene, and antimonene, have witnessed a very fast development of both fundamental and practical aspects in ultrafast photonics since 2009. Their unique nonlinear optical properties enable them to be used as excellent saturable absorbers(SAs) that have fast responses and broadband operation, and can be easily integrated into lasers. Here, we catalog and review recent progress in the exploitation of these 2D noncarbon materials in this emerging field. The fabrication techniques, nonlinear optical properties, and device integration strategies of 2D noncarbon materials are first introduced with a comprehensive view. Then, various mode-locked/Q-switched lasers(e.g., fiber, solid-state, disk, and waveguide lasers) based on 2D noncarbon materials are reviewed. In addition, versatile soliton pulses generated from the mode-locked fiber lasers based on 2D noncarbon materials are also summarized. Finally, future challenges and perspectives of 2D materials-based lasers are addressed.     

The metallic nature of two-dimensional transition-metal dichalcogenides and MXenes

Metallic two-dimensional (2D) materials such as transition-metal dichalcogenides (TMDCs) and MXenes exhibit intriguing properties, including superconductivity, magnetism and electrocatalysis. Studies on the correlation between their nanoscale structures and properties can facilitate the development of photodetectors, supercapacitors, nanocatalysts, etc., but this topic has not been reviewed systematically. Here, we provide a comprehensive overview on the key factors that dictate the structures and properties of these 2D metals. We examine their phase transitions induced by structural or electronic modifications based on microscopic imaging, spectral characterization, and electrical measurements. From the perspective of surface and interface engineering, we elucidate the influences of lattice defects, dopants, and intercalated species between adjacent layers. Moreover, heterostructures involving highly conductive 2D component(s) are discussed, which may enable the observation of fascinating phenomena and/or synergistic effects due to the interlayer interactions. Finally, we provide insights into opportunities for new applications, e.g., radio-frequency antennas and electromagnetic interference shields. Feasible routes are also proposed to overcome the current challenges.     

Effect of electrical contact on performance of WSe2 field effect transistors

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as tungsten diselenide (WSe₂) have spead many interesting physical properties, which may become ideal candidates to develop new generation electronic and optoelectronic devices. In order to reveal essential features of 2D TMDCs, it is necessary to fabricate high-quality devices with reliable electrical contact. We systematically analyze the effect of graphene and metal contacts on performance of multi-layered WSe₂ field effect transistors (FETs). The temperature-dependent transport characteristics of both devices are tested. Only graphene-contacted WSe₂ FETs are observed with the metal-insulator transition phenomenon which mainly attributes to the ultra-clean contact interface and lowered contact barrier. Further characterization on contact barrier demonstrates that graphene contact enables lower contact barrier with WSe₂ than metal contact, since the Fermi level of graphene can be modulated by the gate bias to match the Fermi level of the channel material. We also analyze the carrier mobility of both devices under different temperatures, revealing that graphene contact can reduce the charge scattering of the device caused by ionized impurities and phonon vibrations in low and room temperature regions, respectively. This work is expected to provide reference for fabricating 2D material devices with decent performances.     

多元半导体光伏材料中晶格缺陷的计算预测

半导体光伏材料的发展在过去60多年中表现出了清晰的多元化趋势. 从20世纪50年代的一元Si太阳能电池, 到20世纪60年代的GaAs和CdTe电池、70年代的CuInSe₂电池、80年代的Cu(In, Ga) Se₂、90年代的Cu₂ZnSnS₄电池, 再到最近的Cu₂ZnSn(S, Se)₄和CH₃NH₃PbI₃电池, 组成光伏半导体的元素种类从一元逐渐增多到五元. 元素种类的增多使得半导体物性调控的自由度增多, 物性更加丰富, 因而能满足光伏等器件应用的需要. 但是, 组分元素种类的增多也导致半导体中晶格点缺陷的种类大幅增加, 可能对其光学、电学性质和光伏性能产生显著影响. 近20年来, 第一性原理计算被广泛应用于半导体中晶格点缺陷的理论预测, 相对于间接的实验手段, 第一性原理计算具有更加直接的、明确的优势, 并且能对各种点缺陷进行快速的研究. 对于缺陷种类众多的多元半导体体系, 第一性原理计算能预测各种点缺陷的微观构型、浓度和跃迁(离化)能级位置, 从而揭示其对光电性质的影响, 发现影响器件性能的关键缺陷. 因而, 相关的计算结果对于实验研究有直接、重要的指导意义. 本文将首先介绍半导体点缺陷研究的第一性原理计算模型和计算流程; 然后, 总结近5年来两类新型光伏半导体材料, 类似闪锌矿结构的Cu₂ZnSn(S, Se)₄半导体和有机-无机杂化的钙钛矿结构CH₃NH₃PbI₃半导体的点缺陷性质; 以这两类体系为例, 介绍多元半导体缺陷性质的独特特征及其对太阳能电池器件性能的影响.     

Third-Order Optical Nonlinearity in Two-Dimensional Transition Metal Dichalcogenides

We present a detailed calculation of the linear and nonlinear optical response of four types of monolayer twodimensional (2D) transition-metal dichalcogenides (TMDCs), having the formula MX₂ with M=Mo, W and X=S, Se. The calculations are based on 6-band tight-binding model of TMDCs, and then performing a semi-classical perturbation analysis of response functions. We numerically calculate the linear χ_μν⁽¹⁾ (-ω;ω) and nonlinear surface susceptibility tensors χ_μνζη⁽³⁾(-ω_Σ; ω_r; ω_s; ω_t) with ω_Σ=ω_r+ω_s+ω_t. Both non-degenerate and degenerate cases are studied for thirdharmonic generation and nonlinear refractive index, respectively. Computational results obtained with no external fitting parameters are discussed regarding two recent reported experiments on MoS₂, and thus we can confirm the extraordinarily strong optical nonlinearity of TMDCs. As a possible application, we demonstrate generation of a π/4-rotated squeezed state by means of nonlinear response of TMDCs, in a silica micro-disk resonator covered with the 2D material. Our proposed method will enable accurate calculations of nonlinear optical response, such as four-wave mixing and highharmonic generation in 2D materials and their heterostructures, thus enabling study of novel functionalities of 2D photonic integrated circuits.     

二维原子晶体的低电压扫描透射电子显微学研究

二维原子晶体材料,如石墨烯和过渡金属硫族化合物等,具有不同于其块体的独特性能,有望在二维半导体器件中得到广泛应用.晶体中的结构缺陷对材料的物理化学性能有直接的影响,因此研究结构缺陷和局域物性之间的关联是当前二维原子晶体研究中的重要内容,需要高空间分辨率的结构研究手段.由于绝大部分二维原子晶体在高能量高剂量的电子束辐照下容易发生结构损伤,利用电子显微方法对二维原子晶体缺陷的研究面临诸多挑战.低电压球差校正扫描透射电子显微(STEM)技术的发展,一个主要目标就是希望在不损伤结构的前提下对二维原子晶体的本征结构缺陷进行研究.在STEM下,多种不同的信号能够被同步采集,包括原子序数衬度高分辨像和电子能量损失谱等,是表征二维原子晶体缺陷的有力工具,不但能对材料的本征结构进行单原子尺度的成像和能谱分析,还能记录材料结构的动态变化.通过调节电子束加速电压和电子辐照剂量,扫描透射电子显微镜也可以作为电子刻蚀二维原子晶体材料的平台,用于加工新型纳米结构以及探索新型二维原子晶体的原位制备.本综述主要以本课题组在石墨烯和二维过渡金属硫族化合物体系的研究为例,介绍低电压扫描透射电子显微学在二维原子晶体材料研究中的实际应用.     

Vertical WS_2 spin valve with Ohmic property based on Fe_3GeTe_2 electrodes

The two-dimensional(2 D) transition-metal dichalcogenides(TMDCs) have been recently proposed as a promising class of materials for spintronic applications. Here, we report on the all-2 D van der Waals(vd W) heterostructure spin valve device comprising of an exfoliated ultra-thin WS_2 semiconductor acting as the spacer layer and two exfoliated ferromagnetic Fe_3 GeTe_2(FGT) metals acting as ferromagnetic electrodes. The metallic interface rather than Schottky barrier is formed despite the semiconducting nature of WS_2, which could be originated from the strong interface hybridization. The spin valve effect persists up to the Curie temperature of FGT. Moreover, our metallic spin valve devices exhibit robust spin valve effect where the magnetoresistance magnitude does not vary with the applied bias in the measured range up to 50 μA due to the Ohmic property, which is a highly desirable feature for practical application that requires stable device performance. Our work reveals that WS_2-based all-2 D magnetic vd W heterostructure, facilitated by combining 2 D magnets, is expected to be an attractive candidate for the TMDCs-based spintronic applications.     

层数变化对堆叠生长的MoS_(2(1-x))Se_(2x)电子结构的影响

二维过渡金属硫化物因其独特的光电特性在多功能光电器件方面具有广泛的应用前景.为了进一步拓展其在微纳光电子器件方面的应用范围,并提高器件性能,人们开展了通过合金手段改变端组分材料配比实现对二维半导体材料带隙调控的带隙工程以及调控生长条件改变材料形貌和结构的缺陷工程研究.本文利用光学、原子力和扫描电子显微镜等设备以及拉曼和光致发光光谱等手段对由化学气相沉积法生长出来的堆叠状MoS_(2(1-x))Se_(2x)合金的性质进行了研究.不同于大多数单层或少层MoS_(2(1-x))Se_(2x)合金的情况,堆叠生长的阶梯状MoS_(2(1-x))Se_(2x)合金材料在厚度从2.2 nm (约3层)一直增加到5.6 nm (约7层)时都显出了较强的发光特性,甚至在100 nm厚时,样品的发光谱线仍具有两个发光峰.两个激子发光峰分别来源于自旋轨道耦合造成的价带劈裂.随着厚度的增加,两个峰都逐渐红移,显示了合金掺杂时的能带弯曲效应.拉曼光谱给出了类MoS_2和类MoSe_2两套振动模.随着厚度的增加,拉曼峰位几乎不移动,但面内的两个振动模E_(2g(Mo-Se))和E_(2g(Mo-s))逐渐显现并增强.显然缺陷和应力是影响堆叠生长MoS_(2(1-x))Se_(2x)合金样品电子结构的主要因素,这为特殊功能器件的制备和可控缺陷工程的研究提供了有益的参考.     

Tunable charge density wave in TiS_3 nanoribbons

Recently, modifications of charge density wave(CDW) in two-dimensional(2D) show intriguing properties in quasi-2D materials such as layered transition metal dichalcogenides(TMDCs). Optical, electrical transport measurements and scanning tunneling microscopy uncover the enormous difference on the many-body states when the thickness is reduced down to monolayer. However, the CDW in quasi-one-dimensional(1D) materials like transition metal trichalcogenides(TMTCs) is yet to be explored in low dimension whose mechanism is likely distinct from their quasi-2D counterparts.Here, we report a systematic study on the CDW properties of titanium trisulfide(TiS_3). Two phase transition temperatures were observed to decrease from 53 K(103 K) to 46 K(85 K) for the bulk and 15-nm thick nanoribbon, respectively,which arises from the increased fluctuation effect across the chain in the nanoribbon structure, thereby destroying the CDW coherence. It also suggests a strong anisotropy of CDW states in quasi-1D TMTCs which is different from that in TMDCs.Remarkably, by using back gate of-30 V ～ 70 V in 15-nm device, we can tune the second transition temperature from110 K(at-30 V) to 93 K(at 70 V) owing to the altered electron concentration. Finally, the optical approach through the impinging of laser beams on the sample surface is exploited to manipulate the CDW transition, where the melting of the CDW states shows a strong dependence on the excitation energy. Our results demonstrate TiS_3 as a promising quasi-1D CDW material and open up a new window for the study of collective phases in TMTCs.     

Recent developments in CVD growth and applications of 2D transition metal dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDs) with fascinating electronic energy band structures, rich valley physical properties and strong spin–orbit coupling have attracted tremendous interest, and show great potential in electronic, optoelectronic, spintronic and valleytronic fields. Stacking 2D TMDs have provided unprecedented opportunities for constructing artificial functional structures. Due to the low cost, high yield and industrial compatibility, chemical vapor deposition (CVD) is regarded as one of the most promising growth strategies to obtain high-quality and large-area 2D TMDs and heterostructures. Here, state-of-the-art strategies for preparing TMDs details of growth control and related heterostructures construction via CVD method are reviewed and discussed, including wafer-scale synthesis, phase transition, doping, alloy and stacking engineering. Meanwhile, recent progress on the application of multi-functional devices is highlighted based on 2D TMDs. Finally, challenges and prospects are proposed for the practical device applications of 2D TMDs.     

Effect of triangular vacancy defect on thermal conductivity and thermal rectification in graphene nanoribbons

We investigate the thermal transport properties of armchair graphene nanoribbons (AGNRs) possessing various sizes of triangular vacancy defect within a temperature range of 200–600 K by using classical molecular dynamics simulation. The results show that the thermal conductivities of the graphene nanoribbons decrease with increasing sizes of triangular vacancy defects in both directions across the whole temperature range tested, and the presence of the defect can decrease the thermal conductivity by more than 40% as the number of removed cluster atoms is increased to 25 (1.56% for vacancy concentration) owing to the effect of phonon–defect scattering. In the meantime, we find the thermal conductivity of defective graphene nanoribbons is insensitive to the temperature change at higher vacancy concentrations. Furthermore, the dependence of temperatures and various sizes of triangular vacancy defect for the thermal rectification ration are also detected. This work implies a possible route to achieve thermal rectifier for 2D materials by defect engineering.     

Defect inspection of actuator lenses using swept-source optical coherence tomography

Actuator lens industries have gained an enormous interest with the enhancement of various latest communication devices, such as mobile phone and notebooks. The quality of the aforementioned devices can be degraded due to the internal defects of actuator lenses. Therefore, in this study, we implemented swept-source optical coherence tomography (SS-OCT) system to inspect defects of actuator lenses. Owing to the high-resolution of the SS-OCT system, defected foreign substances between the actuator lenses, defective regions of lenses and surface stains were more clearly distinguished through three-dimensional (3D) and two-dimensional (2D) cross-sectional OCT images. Therefore, the implemented SS-OCT system can be considered as a potential application to defect inspection of actuator lens.     

Polarized photoluminescence spectroscopy in WS2, WSe2 atomic layers and heterostructures by cylindrical vector beams

Due to the large exciton binding energy, two-dimensional (2D) transition metal dichalcogenides (TMDCs) provide an ideal platform for studying excitonic states and related photonics and optoelectronics. Polarization states lead to distinct light-matter interactions which are of great importance for device applications. In this work, we study polarized photoluminescence spectra from intralayer exciton and indirect exciton in WS₂ and WSe₂ atomic layers, and interlayer exciton in WS₂/WSe₂ heterostructures by radially and azimuthally polarized cylindrical vector laser beams. We demonstrated the same in-plane and out-of-plane polarization behavior from the intralayer and indirect exciton. Moreover, with these two laser modes, we obtained interlayer exciton in WS₂/WSe₂ heterostructures with stronger out-of-plane polarization, due to the formation of vertical electric dipole moment.     

First-principles study of defect control in thin-film solar cell materials

A solar cell is a photovoltaic device that converts solar radiation energy to electrical energy, which plays a leading role in alleviating global energy shortages and decreasing air pollution levels typical of conventional fossil fuels. To render solar cells more efficient, high visible-light absorption rates and excellent carrier transport properties are required to generate high carrier levels and high output voltage. Hence, the core material, i.e., the absorption layer, should have an appropriate direct band gap and be effectively doped by both p-and n-types with minimal carrier traps and recombination centers. Consequently, defect properties of absorbers are critical in determining solar cell efficiency. In this work, we review recent first-principles studies of defect properties and engineering in four representative thin-film solar cells, namely CdTe, Cu(In,Ga)Se_2, Cu_2ZnSnS_4, and halide perovskites. The focal points include basic electronic and defect properties, existing problems, and possible solutions in engineering defect properties of those materials to optimize solar cell efficiency.     

Growth of Au clusters on amorphous Al2O3: evidence of cluster mobility above a critical size

We study the 3D growth of clusters during the deposition of Au atoms on amorphous Al2O3. By comparing transmission electron microscopy images of the growth with Monte Carlo simulations, we show that nucleation takes place on substrate defects, but that further stages of growth imply that clusters leave the defects after they have reached a given critical size, and diffuse. An interesting consequence of this property is that, in contrast to intuition, and in a certain range of size, larger clusters are more mobile than smaller ones in this system.     

复合缺陷型电磁帯隙谐振腔

提出了一种复合缺陷型电磁带隙(EBG)谐振腔,通过对该EBG结构的带隙分析,指出该谐振腔可在大尺寸下实现单模工作,提供更大的容差空间,且具有高Q值.数值模拟结果表明,基于复合缺陷EBG结构构成的谐振腔,单模工作条件可以放宽到外圈金属柱直径与周期之比为0.6,内圈金属柱直径与周期比为0.9;而传统中心缺陷型EBG结构的小于0.3. 关键词： 电磁带隙 复合缺陷 谐振腔 单模     

Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.     

Investigation of the thermoelectric properties of one-layer transition metal dichalcogenides

Transition metal dichalcogenides (TMDCs) have attracted various research interests as one of the priorities of materials research due to their promising properties, especially in the field of thermoelectricity. The efficiency or performance of thermoelectric devices is expressed in terms of the thermoelectric figure-of-merit (ZT) – a standard indicator of a material's thermoelectric properties for use in cooling systems. The evaluation of ZT is principally determined by the thermoelectric characteristics of the nanomaterials. In this paper, a set of investigative computations was performed to study the thermoelectric properties of monolayer TMDCs according to the semiclassical treatment of the Boltzmann transport equation. It was confirmed that the thermoelectric properties of 2D materials can be greatly improved compared with their bulk properties. Calculations show an improvement in the power factor for the TMDCs under consideration, and, thus, the ZT compared to the bulk state due to an improvement in the Seebeck modulus and electrical conductivity, without significantly affecting the thermal conductivity and negatively affecting the ZT. These materials show clear characteristic variations at room temperature, with the highest ZT values of 2.919 and 2.873 obtained for WSe2 and WS2, respectively.