Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions

The interfacial properties of MoS₂/4H-SiC heterostructures were studied by combining first-principles calculations and X-ray photoelectron spectroscopy. Experimental (theoretical) valence band offsets (VBOs) increase from 1.49 (1.46) to 2.19 (2.36) eV with increasing MoS₂ monolayer (1L) up to 4 layers (4L). A strong interlayer interaction was revealed at 1L MoS₂/SiC interface. Fermi level pinning and totally surface passivation were realized for 4H-SiC (0001) surface. About 0.96e per unit cell transferring forms an electric field from SiC to MoS₂. Then, 1L MoS₂/SiC interface exhibits type I band alignment with the asymmetric conduction band offset (CBO) and VBO. For 2L and 4L MoS₂/SiC, Fermi level was just pinning at the lower MoS₂ 1L. The interaction keeps weak vdW interaction between upper and lower MoS₂ layers. They exhibit the type II band alignments and the enlarged CBOs and VBOs, which is attributed to weak vdW interaction and strong interlayer orbital coupling in the multilayer MoS₂. High efficiency of charge separation will emerge due to the asymmetric band alignment and built-in electric field for all the MoS₂/SiC interfaces. The multiple interfacial interactions provide a new modulated perspective for the next-generation electronics and optoelectronics based on the 2D/3D semiconductors heterojunctions.     

X-ray photoelectron spectroscopy studies of Co-doped ZnO-Ga2O3-SiO2 nano-glass-ceramic composites

Co-doped ZnO-Ga₂O₃-SiO₂ nano-glass-ceramic composites were prepared by sol-gel method. X-ray diffraction patterns showed that the crystallization temperature was 800 °C. X-ray photoelectron spectroscopy (XPS) was used to study the effect of heat-treatment temperature on the electronic structure of Co-doped ZnO-Ga₂O₃-SiO₂ nano-glass-ceramic composites. The Zn (2p_3/2), Ga (2p_3/2) and O (1s) XPS spectra for the glass-ceramics heat-treated at 800-1000 °C could be deconvoluted into two peaks corresponding to these elements in glass network and in nanocrystals, respectively. The results indicate that the material is composed of an amorphous silicate network and ZnGa₂O₄ nanocrystalline particles. The amount of nanocrystals increases with the annealing temperature. The photoelectron peak of Si (2p) shifts to higher binding energy at higher annealing temperature, revealing the charge transfer from Si to O increased. The relationship between the microstructure of Co-doped ZnO-Ga₂O₃-SiO₂ sample and its absorption properties was discussed, and the suitable heat-treatment temperature was proposed.     

NbSi2奇异高压相及其热力学性质的第一性原理研究

采用基于粒子群优化算法的结构预测程序CALYPSO, 并结合第一性原理的VASP程序, 在175 GPa发现NbSi₂的奇异立方高压相. 在此结构中, Nb原子形成金刚石结构, 而Si原子则形成正四面体镶嵌在金刚石结构中. 声子谱计算结果表明该结构是动力学稳定的. 电子结构分析表明, 六角相和立方相NbSi₂均为金属, 对金属性贡献较大的是Nb原子, 而且Nb和Si原子之间存在明显的p-d杂化现象, 电荷更多地聚集在Si四面体中. 利用“应力应变”方法, 计算了NbSi₂的弹性常数, 分析了其体积模量、剪切模量、杨氏模量和德拜温度等热动力学性质随压力的变化并进行了详细的讨论. 根据剪切模量和体积模量的比值分析了NbSi₂两种相结构的脆性和延展性, 发现压力会导致六角相NbSi₂的延展性增加, 但对立方相结构的延展性影响较小; 采用经验算法计算了NbSi₂两种相结构硬度变化情况, 结合这一比值进行了详细的分析. 弹性各向异性计算结果表明, 随着压力增加, 六角结构的各向异性增强, 而立方结构的各向异性减小.     

二硫化钨/石墨烯异质结的界面相互作用及其肖特基调控的理论研究

采用第一性原理方法研究了二硫化钨/石墨烯异质结的界面结合作用以及电子性质,结果表明在二硫化钨/石墨烯异质结中,其界面相互作用是微弱的范德瓦耳斯力.能带计算结果显示异质结中二硫化钨和石墨烯各自的电子性质得到了保留,同时,由于石墨烯的结合作用,二硫化钨呈现出n型半导体.通过改变界面的层间距可以调控二硫化钼/石墨烯异质结的肖特基势垒类型,层间距增大,肖特基将从p型转变为n型接触.三维电荷密度差分图表明,负电荷聚集在二硫化钨附近,正电荷聚集在石墨烯附近,从而在界面处形成内建电场.肖特基势垒变化与界面电荷流动密切相关,平面平均电荷密度差分图显示,随着层间距逐渐增大,界面电荷转移越来越弱,且空间电荷聚集区位置向石墨烯层方向靠近,导致费米能级向上平移,证实了肖特基势垒随着层间距的增加由p型接触向n型转变.本文的研究结果将为二维范德瓦耳斯场效应管的设计与制作提供指导.     

X-ray photoelectron and X-ray Auger electron spectroscopy studies of heavy ion irradiated C60 films

The influence of 200 MeV Au ion irradiation on the surface properties of polycrystalline fullerene films has been investigated. The X-ray photoelectron and X-ray Auger electron spectroscopies are employed to study the ion-induced modification of the fullerene, near the surface region. The shift of C 1s core level and decrease in intensity of shake-up satellite were used to investigate the structural changes (like sp² to sp³ conversion) and reduction of π electrons, respectively, under heavy ion irradiation. Further, X-ray Auger electron spectroscopy was employed to investigate hybridization conversion qualitatively as a function of ion fluence.     

β-PtO2: Phononic,thermodynamic, and elastic properties derived from first-principles calculations

β-PtO₂ is a useful transition metal dioxide, but its fundamental thermodynamic and elastic properties remain unexplored. Using first-principles calculations, we systematically studied the structure, phonon, thermodynamic and elastic properties of β-PtO₂. The lattice dynamics and structural stability of β-PtO₂ under pressure were studied using the phonon spectra and vibrational density of states. The vibrational frequencies of the optical modes of β-PtO₂ increase with elevating pressure; this result is comparable with the available experimental data. Then, the heat capacities and their pressure responses were determined based on the phonon calculations. The pressure dependence of the Debye temperature was studied, and the results were compared in two distinct aspects. The elastic moduli of β-PtO₂ were estimated through the Voigt–Reuss–Hill approximation. The bulk modulus of β-PtO₂ increases linearly with pressure, but the shear modulus is nearly independent of pressure. Our study revealed that the elastic stiffness coefficients C₄₄, C₅₅ and C₆₆ play a primary role in the slow variation of the shear modulus.     

Secondary ion mass spectrometry and X-ray photoelectron spectroscopy studies on TiO2 and nitrogen doped TiO2 thin films

Anatase phase TiO₂ and nitrogen (N) doped TiO₂ thin films were synthesized by an ultrasonic spray pyrolysis technique on c-Si (100) substrates in the temperature range 300-550 °C. The former used a precursor solution of titanium oxy acetylacetonate in methanol whereas the later used a titanium oxy acetylacetonate hexamine mixture in methanol. Homogeneity across the film’s thickness and the nature of the film-substrate interface were studied by dynamic depth profiling acquired using secondary ion mass spectrometry SIMS. The stoichiometry and bonding state of various species present in the films were studied using X-ray photoelectron spectroscopy (XPS). N-doping was confirmed by both SIMS and XPS. XPS studies revealed that the nitrogen content of the films synthesized at 300 °C (3.2%) is high compared to that of films made at 350 °C (1.3%).     

Characterization of SiO2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy

Si 2p and C 1s core level spectra recorded at different electron emission angles from SiO₂/SiC samples using a photon energy of 3.0 keV show two components. These are identified as originating from SiO₂ and SiC for Si 2p while for C 1s they are identified to originate from graphite like carbon and SiC. The relative intensity of these components are extracted and compared to calculated intensity variations assuming different models for the elemental distribution in the surface region. For both samples investigated best agreement between experimental and calculated intensity variations with emission angle is obtained when assuming a graphite like layer on top of the oxide layer. Contribution from carbon at the SiC/SiO₂ interface could not be identified.     

Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy

The valence band offset (VBO) of MgO/TiO₂ (rutile) heterojunction has been directly measured by X-ray photoelectron spectroscopy. The VBO of the heterojunction is determined to be 1.6 ± 0.3 eV and the conduction band offset (CBO) is deduced to be 3.2 ± 0.3 eV, indicating that the heterojunction exhibits a type-I band alignment. These large values are sufficient for MgO to act as tunneling barriers in TiO₂ based devices. The accurate determination of the valence and conduction band offsets is important for use of MgO as a buffer layer in TiO₂ based field-effect transistors and dye-sensitized solar cells.     

Substrate temperature dependence of the photoluminescence efficiency of co-sputtered Si/SiO2 layers

Si particles embedded in an SiO₂ matrix were obtained by co-sputtering of Si and SiO₂ at various deposition temperatures T_d (200–700°C) and annealing at different temperatures T_a (900–1100°C). The systems were characterized by X-ray photoelectron, Raman scattering, infrared absorption and photoluminescence spectroscopy techniques. The results show that the photoluminescence efficiency is strongly dependent on the degree of phase separation between the Si nanocrystals and the SiO₂ matrix. This is likely connected with the Si/SiO₂ interface characteristics, together with the features indicating the involvement of quantum confinement.     

Composition depth profiles of Bi3.15Nd0.85Ti3O12 thin films studied by X-ray photoelectron spectroscopy

In the present work, X-ray photoelectron spectroscopy (XPS) was used to investigate the composition depth profiles of Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) ferroelectric thin film, which was prepared on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by chemical solution deposition (CSD). It is shown that there are three distinct regions formed in BNT film, which are surface layer, bulk film and interface layer. The surface of film is found to consist of one outermost Bi-rich region. High resolution spectra of the O 1s peak in the surface can be decomposed into two components of metallic oxide oxygen and surface adsorbed oxygen. The distribution of component elements is nearly uniform within the bulk film. In the bulk film, high resolution XPS spectra of O 1s, Bi 4f, Nd 3d, Ti 2p are in agreement with the element chemical states of the BNT system. The interfacial layer is formed through the interdiffusion between the BNT film and Pt electrode. In addition, the Ar⁺-ion sputtering changes lots of Bi³⁺ ions into Bi⁰ due to weak Bi-O bond and high etching energy.     

Si衬底上生长的MnSi薄膜和MnSi1．7纳米线的STM和XPS分析

本文采用分子束外延方法制备出MnSi薄膜和MnSi1．7纳米线,利用扫描隧道显微镜进行观察,采用X射线光电子能谱仪系统地分析了MnSi薄膜和MnSi1．7纳米线的Mn2p和Si2p．结果表明厚度为-0．9nm的MnSi薄膜表面为／3×／3重构,MnSi1．7纳米线长50ff--1500nm,宽16—18nm,高-3nm．MnSi薄膜的Mn2p1／2和Mn2p3／2峰位与MnSil．7纳米线相同,均分别为649．7eV和638．7ev结合能在640-645eV和-653．8eV处的锰氧化合物的Mn2ps／2和Mn2p1／2峰证明在短暂暴露于空气中后MnSi薄膜和MnSi1．7纳米线表面有氧化层形成．相对于纯si的si2p谱,两种锰硅化合物的Si2p谱向低结合能方向发生了位移,表明随着锰硅化合物的形成Si的化学环境发生了变化．     

GexSb20Se80-x玻璃的拉曼光谱和X射线光电子能谱

用拉曼散射光谱和X射线光电子能谱研究了Ge_xSb₂₀Se_80-x(x=5 mol%, 10 mol%, 15 mol%, 17.5 mol%, 20 mol%和25 mol%)玻璃的结构. 通过对拉曼光谱和X射线光电子能谱(Ge 3d, Sb 4d 和Se 3d谱)进行分解, 发现当硫系玻璃处于富Se状态下时, 玻璃结构中会出现Se–Se–Se结构单元, 其数量随着Ge含量的增加而迅速减少, 并最终在Ge₁₅Sb₂₀Se₆₅玻璃结构中消失; Ge和Sb原子分别以GeSe_4/2 四面体和SbSe_3/2三角锥结构单元在玻璃结构中出现, GeSe_4/2四面体结构单元的数量会随着Ge浓度的增加而增加, 而SbSe_3/2三角锥结构单元的数量基本保持稳定. 另一方面, 在缺Se的硫系玻璃中, 玻璃会有Ge–Ge和Sb–Sb同极键产生, 随着Ge含量的增大, 这种同极键的数量会越来越多; 而GeSe_4/2四面体和SbSe_3/2三角锥结构的数量则相应减少. 在所有玻璃样品的结构中均有同极键Se–Se的存在. 当玻璃组分越接近完全化学计量配比时, 异质键Ge–Se和Sb–Se将占据玻璃结构中的主导地位, 同极键Ge–Ge, Sb–Sb和Se–Se 的比例降为最小.     

Synchrotron radiation photoelectron spectroscopy study of metal-oxide thin film catalysts: Pt-CeO2 coated CNTs

The interaction of Pt with CeO₂ layers was investigated by using high resolution hard X-ray photoelectron spectroscopy. Pt doped CeO₂ layers were deposited simultaneously by rf-magnetron sputtering on a SiO₂/Si substrate and carbon nanotubes (CNTs) grown on a carbon diffusion layer of a polymer membrane fuel cell. In the case of the CNT support photoelectron spectra showed the formation of ionic platinum rich cerium oxide with Pt^2+,4+ species, and with the Pt²⁺/Pt⁴⁺ ratio strongly dependent on the amount of platinum. Ce reveals 4+/3+ mixed valent character with Ce³⁺ concentration increasing with Pt content. In the case of the SiO₂/Si substrate the film revealed Ce⁴⁺ and Pt⁴⁺ species only.     

C掺杂金红石相TiO2的电子结构和光学性质的第一性原理研究

运用第一性原理的局域密度近似+U(0 ≤U≤9 eV)方法研究了本征金红石相TiO₂在不同U值(对Ti-3d电子)下的禁带宽度、晶体结构以及不同比例C元素掺杂的金红石相TiO₂的电子结构和光学性质, 研究表明, TiO₂的禁带宽度和晶格常数随着U值的增加而增大. 综合考虑取U=3 eV并对其计算结果进行修正. 对于掺杂体系, 发现C 元素的掺杂在金红石相TiO₂中引入杂质能级, 杂质能级主要由O-2p轨道和C-2p轨道耦合形成, 杂质能级的引入可以增加TiO₂对可见光的响应, 从而使TiO₂的吸收范围增大. C原子掺杂最佳比例为8.3%, 此时光学吸收边的红移程度最明显, 可增大光吸收效率, 从而提高了TiO₂光催化效率.     

X-ray photoelectron spectroscopic investigations on cubic BaTiO3, BaTi0.9Fe0.1O3 and Ba0.9Nd0.1TiO3 systems

X-ray photoelectron spectroscopic (XPS) studies were carried out on wet-chemically synthesized cubic BaTiO₃, Ba_0.9Nd_0.1TiO₃ and BaTi_0.9Fe_0.1O_3−δ powders. The compounds were prepared by hydrothermal and gel to crystallite conversion technique; and phases formed readily at 420 K. The phase purity of the powders was confirmed from X-ray diffractometry. Chemical state and chemical environment of the constituent elements in the compositions were examined by XPS. Ba²⁺ was found to exist in two different chemical environments in these titanates. The Ti 2p_3/2 photoelectron peak in BaTi_0.9Fe_0.1O_3−δ was found to be broadened after Fe³⁺ substitution. Any resolvable broadening was not observed distinctly in the Ti 2p peak for Ba_0.9Nd_0.1TiO₃, unsintered BaTiO₃ and BaTiO₃ annealed in hydrogen (8% H₂ + Ar) at 1000 K. The prevalence of mixed-valent titanium and iron in BaTi_0.9Fe_0.1O_3−δ composition was evident from the XPS results and was further supported by the enhanced electrical conductivity at 298-550 K for BaTi_0.9Fe_0.1O_3−δ in comparison to BaTiO₃ and Ba_0.9Nd_0.1TiO₃. Hydroxyl incorporation was facilitated by substituting Nd³⁺ in Ba-sublattice. The presence of hydroxyls was observed from the broadening of the O 1s peak in XPS studies of the compounds.     

Experimental and theoretical study of the electronic properties of CoSi2 and NiSi2

Electronic structure of Co and Ni silicides were studied by means of the spectral properties of XPS high-resolution measurements together with theoretical calculations using crystal orbital overlap population (COOP) analysis. Calculations were carried out for CoSi₂ and NiSi₂ microstructures. Analysis from calculations shows that hybridization is stronger in Co disilicide than in Ni disilicide. Close to the Fermi level, we noticed that for the Co disilicide there is a small distribution (bonding and antibonding) to the total COOP, while the contribution from the Ni disilicide is null. XPS analysis of sample under study gives evidence about the covalent bonding when the chemical shifts for the Co 2p_3/2, Ni 2p_3/2 and Si 2p transitions are analyzed in the depth-profile mode.     

二硫化钼/石墨烯异质结的界面结合作用及其对带边电位影响的理论研究

采用基于色散修正的平面波超软赝势方法研究了二硫化钼/石墨烯异质结的界面结合作用及其对电荷分布和带边电位的影响.研究表明二硫化钼与石墨烯之间可以形成范德瓦耳斯力结合的稳定堆叠结构.通过能带结构计算,发现二硫化钼与石墨烯的耦合导致二硫化钼成为n型半导体,石墨烯转变成小带隙的p型体系.并通过电子密度差分图证实了界面内二硫化钼附近聚集负电荷,石墨烯附近聚集正电荷,界面内形成的内建电场可以抑制光生电子-空穴对的复合.石墨烯的引入可以调制二硫化钼的能带,使其导带底上移至-0.31 eV,提高了光生电子还原能力,有利于光催化还原反应.     

Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy was used to measure the valence-band offset (VBO) of the NiO/ZnO heterojunction grown on quartz substrate by radio frequency (RF) magnetron sputtering. Core levels of Ni 2p and Zn 2p were used to align the VBO of p-NiO/n-ZnO heterojunction. The valence-band offset (ΔEV) is determined to be 1.47 eV. According to the band gap of 3.7 eV for NiO and 3.37 eV for ZnO, the conduction-band offset (ΔEC) in the structure was calculated to be 1.8 eV, and it has a type-II band alignment.     

The geometric structure of pure SF6 and mixed Ar/SF6 clusters investigated by core level photoelectron spectroscopy

The S 2p core level photoelectron spectra of Sulphurhexafluoride clusters have been investigated together with heterogeneous Ar/SF₆ clusters, created by doping Ar host clusters (with a mean size of 3600 atoms) with the molecule. Surface and bulk features are resolved both in the argon 2p and the sulphur 2p core level photoelectron spectra. For the latter level such features were only observed in the pure cluster case; a single feature characterizes the S 2p core level spectra of SF₆ doped argon clusters. From the chemical shifts, investigated with respect to SF₆ doping pressure. It can be concluded that the host clusters get smaller with increasing doping pressures and that the SF₆ molecules predominantly stay below the cluster surface, whereas the Argon core stays intact. We have neither observed features corresponding to SF₆ on the cluster surface, nor features corresponding to molecules deep inside the bulk in any of the spectra from the pick-up experiments.