AuSi compound formation induced by ion mixing

Ion bombardment with energetic ions of a thin layer of Au deposited on a silicon substrate gives rise to efficient intermixing. This AuSi intermixed layer has been analyzed with Rutherford back-scattering spectrometry and X-ray photoelectron spectroscopy. The results of these investigations show that AuSi compound formation occurs and that this can provide the driving force for the observed intermixing.     

Study of in-situ surface cleaning for Si and SiGe epitaxy on Si with a novel ion beam vapor/assisted deposition technique

Ion beam vapor deposition is a new technique to grow Si and SiGe layers on Si substrates at low temperatures. The in situ surface cleaning prior to the deposition is a crucial step in the epitaxial growth of Si and SiGe films and is achieved by Ar ion bombardment with substrates kept at ambient temperature. A high temperature annealing (800 °C) is needed to repair the damage caused by this bombardment. We studied the effects of ion beam energy and the substrate temperature during the in situ cleaning on the quality of the grown films. An ion beam energy of 150–200eV is found to be sufficient to clean the surface for epitaxial growth. While the films deposited on properly cleaned surfaces are epitaxially grown, the inadequately cleaned surface leads to the formation of polycrystalline layers especially at low substrate temperatures.     

Electron and ion beam analysis of composition and strain in Si-x Ge x /Si heterostructures

Si_1–x Ge _x heterostructures have been grown by molecular beam epitaxy, with nominal compositions of 10 and 15 at %. Analytical electron microscopy, Rutherford backscattering spectrometry and ion channeling have been used in order to determine film thickness, Ge molar fraction and tetragonal distortion. The actual Ge concentrations were found to be smaller than the nominal ones. For all the SiGe films a coherent growth was found, with a small deviation from the perfect tetragonal distortion. The good agreement found between the results obtained by each analytical technique demonstrate that these methods of characterization are powerful tools for the control of the epitaxial layer parameters.     

Nonequilibrium solid phase formation studied by lattice dynamics calculation and ion beam mixing in an immiscible Co-Ag system

For the equilibrium immiscible Co-Ag system, a proven realistic ab initio derived n-body potential is applied to study the nonequilibrium solid phase formation at three chemical stoichiometries of Co/Ag = 1:3, 1:1, and 3:1. To predict the structural stability, the elastic constants and the phonon spectra are calculated at the chosen stoichiometries with a total of eight hypothetical crystalline structures. The calculated results suggest that four compounds, that is, D0(3) CoAg3, B1 CoAg, B2 CoAg, and D0(3) Co3Ag, are unstable, as they all feature negative elastic constants as well as imaginary phonons, and that another four compounds of both fcc-type L1(2) and hcp-type D0(19) structures at chemical stoichiometries of Co/Ag = 1:3 and 3:1, respectively, may elastically be favored and therefore obtainable under some specific conditions. It is also found that all the calculated elastic constants and phonon spectra are coincident within the framework of the elastic theory. Moreover, the calculated elastic constants are in good agreement with those acquired directly from ab initio calculations, lending support to the validity of the ab initio derived n-body Co-Ag potential as well as its resultant elastic constants and the phonon spectra. Interestingly, some of the predicted nonequilibrium solid phases, that is, two hcp-type compounds at chemical stoichiometries of Co/Ag = 1:3 and 3:1, respectively, are indeed obtained in ion beam mixing experiments and their lattice constants determined by diffraction analysis are in good agreement with those from calculations.     

Formation of amorphous alloys by ion beam mixing and its multiscale theoretical modeling in the equilibrium immiscible Sc-W system

Unique amorphous alloys are synthesized at the compositions of 25 and 40 atom % of W by ion beam mixing in the equilibrium immiscible Sc-W system characterized by a positive heat of formation of +14 kJ/mol. In thermodynamic modeling, a Gibbs free energy diagram is constructed based on Miedema's theory, and the diagram predicts a glass-forming range of the Sc-W system to be within 12-58 atom % of W. To develop an atomistic model, ab initio calculations are first conducted to assist the construction of an n-body Sc-W potential under the embedded atom method. The proven realistic potential is applied in molecular dynamic simulations to study the crystal-to-amorphous transition in the Sc-W solid solutions, thus determining the glass-forming ability of the system to be within 15-50 atom % of W. Apparently, both theoretical predicted glass-forming ranges cover the experimentally measured one, showing an excellent agreement. We report, in this paper, the experimental results from ion beam mixing and the multiscale theoretical modeling concerning the amorphous alloy formation in the Sc-W system together with a brief discussion of the structural transition mechanism.     

SIMS investigations of titanium profiles in LiNbO3 produced by ion beam mixing and diffusion

Summary In order to increase the refractive indices of LiNbO₃ just beneath the surface, i.e. to produce waveguides, titanium was incorporated into y-cut substrates by two different methods: Evaporated Ti layers were either diffused at 1000°C or mixed into the substrate with a 3 MeV Ti⁺ beam. Radiation damage caused by ion beam mixing was removed by epitaxial regrowth. The resulting Ti concentration profiles were investigated by means of secondary ion mass spectrometry. The diffused profiles could be fitted by half Gaussians with a diffusion constant ofD = 5.25 × 10^–17 m²/s at 1000°C. The ion beam mixed and annealed profiles show a non-zero slope at the surface and differ significantly from Gaussians.

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SIMS-Untersuchung von Titanprofilen in LiNbO₃ hergestellt durch Ionenstrahl-Mischung und Diffusion

     

Swift heavy ion induced effects at Mo/Si interface and silicide formation

Swift heavy ion (SHI) induced modification at metal/Si interfaces has emerged as an interesting field of research due to its large applications. In this study, we investigate SHI‐induced mixed molybdenum silicide film with ion fluences. The molybdenum thin films were deposited on silicon substrates using e‐beam evaporation at 10^?8 torr vacuum. Thin films were irradiated with Au ions of energy 120 MeV to form molybdenum silicide. The samples were characterized by grazing incidence X‐ray diffraction (GIXRD) technique for the identification of phase formation at the interface. Rutherford backscattering spectrometry (RBS) was used to investigate the elemental distribution in the films. The mixing rate calculations were made and the diffusivity values obtained lead to a transient melt phase formation at the interface according to thermal spike model. Irradiation‐induced effects at surface have been observed and roughness variations at the surface were calculated using atomic force microscopy (AFM) technique. Copyright © 2009 John Wiley & Sons, Ltd.     

利用XPS氩离子刻蚀表征锂离子电池Si/C负极材料中含硅的活性物质

以石墨、沥青和纳米硅粉为原料制备了锂离子电池Si/C负极材料,使用SEM/ BSE 、Raman、XRD、XPS及XPS氩离子刻蚀等方法对其硅活性物质进行了具体分析。结果表明,XRD和Raman仅判断出负极材料中含有活性物质单质Si;常规XPS结果发现近一半的Si已被氧化为惰性物质SiO2;而使用XPS氩离子刻蚀方法发现负极材料中Si存在5种化学态,包括活性物质单质Si、Si2O、SiO、Si2O3,及惰性物质SiO2;定量结果表明,复合材料的硅活性物质高于96.56%,且主要结构是低价态硅氧化物,而非单质Si。XPS氩离子刻蚀的分析方法为锂离子电池负极材料中硅活性物质的研究提供了新思路。     

A nuclear geochemical analysis system for boron quantification using a focused ion beam

Journal of Radioanalytical and Nuclear Chemistry - Ion beam analysis has for decades been used as a tool for geochemical analysis of trace elements using both X-rays (particle induced X-ray...     

An investigation on focused electron/ion beam induced degradation mechanisms of conjugated polymers

Irradiation damage, caused by the use of beams in the electron microscopes, leads to undesired physical/chemical material property changes or uncontrollable modification of structures that are being processed. Particularly, soft matter such as polymers or biological materials is highly susceptible and very much prone to react on irradiation by electron and ion beams. The effect is even higher when materials are subjected to energetic species such as ions that possess high momentum and relatively low mean path due to their mass. Especially when Ga(+) ions (used as the ion source in Focused Ion Beam (FIB) instruments) are considered, the end-effect might even be the total loss of the material's properties. This paper will discuss the possible types of degradation mechanisms and defect formations that can take place during ion and electron beam irradiation of the conjugated polymers: e.g. polyfluorene (PF) and poly-3-hexylthiophene (P3HT) thin films. For the investigation of the irradiation induced degradation mechanisms in this study, complementary analytical techniques such as Raman Spectroscopy (RS), Infrared Spectroscopy (IR), Electron Energy Loss Spectroscopy (EELS), Atomic Force Microscopy (AFM), and Fluorescence Microscopy including Photoluminescence (PL) and Electroluminescence (EL) Microscopy were applied.     

Structure and electrical resistivity of CeNiSb3

The ternary antimonide CeNiSb₃ has been prepared from an Sb flux or from reaction of Ce, NiSb, and Sb above 1123 K. It crystallizes in the orthorhombic space group Pbcm with Z=12 and lattice parameters a=12.6340(7) Å, b=6.2037(3) Å, and c=18.3698(9) Å at 193 K. Its structure consists of buckled square nets of Sb atoms and layers of highly distorted edge- and face-sharing NiSb₆ octahedra. Located between the _∞²[Sb] and _∞²[NiSb₂] layers are the Ce atoms, in monocapped square antiprismatic coordination. There is an extensive network of Sb-Sb bonding with distances varying between 3.0 and 3.4 Å. The structure is related to that of RECrSb₃ but with a different stacking of the metal-centered octahedra. Resistivity measurements reveal a shallow minimum near 25 K that is suggestive of Kondo lattice behavior, followed by a sharp decrease below 6 K.     

Crystallization kinetics study of melt-spun Zr66.7Ni33.3 amorphous alloy by electrical resistivity measurements

In this paper, the electronic transport properties of as-spun Zr_66.7Ni_33.3 alloys were studied in detail by a combination of electrical resistivity and absolute thermoelectric power measurements over a temperature range from 25 up to 400 °C. Moreover, the isochronal and isothermal crystallization kinetics of Zr_66.7Ni_33.3 glassy alloy has been investigated based on the electrical resistivity measurements. The comparative study of the crystallization kinetics of these binary amorphous alloys was carried out, for the first time to our knowledge, using an accurate method for electrical resistivity measurements. In the isochronal heating process, the apparent activation energy for crystallization was determined to be, respectively, 371.4 kJ mol⁻¹ and 382.2 kJ mol⁻¹, by means of Kissinger and Ozawa methods. The Johnson–Mehl–Avrami model was used to describe the isothermal transformation kinetics, and the local Avrami exponent has been determined in the range from 2.97 to 3.23 with an average value of 3.1, implying a mainly diffusion-controlled three-dimensional growth with an increasing nucleation rate. Based on an Arrhenius relationship, the local activation energy was analyzed, which yields an average value E_x = 376.2 kJ mol⁻¹.

     

Li+3 ion beam irradiation induced changes in the thermodynamic and electrical parameters of 4-n-(nonyloxy) benzoic acid

Li⁺³ ion beam irradiation studies on 4-n-(nonyloxy) benzoic acid (NOBA) have been carried out. Thermodynamic measurements demonstrate that all the phase transition temperatures are depressed for low value of irradiation fluence as compared to those for the pure NOBA and thereafter increase linearly with increase in irradiation fluence. It has also been observed that the temperature range of N and SmC phases in the heating and cooling cycles is improved due to irradiation. Dielectric investigations show that both the transverse as well as the longitudinal components of the dielectric permittivity are increased as compared with those of the pure sample due to irradiation. The observed change in the thermodynamic and dielectric parameters is attributed to the increased concentration of NOBA monomers over the NOBA dimers due to fragmentation of the hydrogen bonding in some of the NOBA dimers.     

Formation and structural anomaly of the metastable phases in an immiscible Ag-Mo system studied by ion beam mixing and molecular dynamics simulation

For the equilibrium immiscible Ag-Mo system characterized by a large positive heat of formation, the nanosized Ag-Mo multilayered samples are designed and prepared to include sufficient interfacial free energy to elevate their initial energetic states to be higher than that of either the amorphous phase or solid solution and then subject to 200 keV xenon ion irradiation. The results show that a uniform amorphous alloy can be obtained within a composition range, at least, from 25 to 88 atom % of Mo. Interestingly, in the intermediate stage of ion irradiation, a bcc phase, an amorphous phase, and an order (bcc)-disorder coexisting state appear simultaneously in the Ag12Mo88 multilayered sample and extend over the entire bright field image with unanimously homogeneous composition. In thermodynamic modeling, a Gibbs free energy diagram of the Ag-Mo system is constructed, based on Miedema's model, and suggests that within a narrow composition regime of 85-90 atom % of Mo, the energy difference between the bcc and the amorphous phases is extremely small, which is probably the very reason for the order-disorder coexisting state to appear. In atomistic modeling, an ab initio derived Ag-Mo potential is applied to perform molecular dynamics simulations. The simulations not only determine an intrinsic glass-forming ability/range (GFA/GFR) of the Ag-Mo system to be from 10 to 88 atom % of Mo but also reveal the possibility of the formation/appearance of a crystalline and amorphous mixture in a narrow composition regime of 88-92 atom % of Mo. Apparently, the theoretical results are in excellent agreement and/or compatible with the experimental observations in ion beam mixing.     

Micelle studies using a metal ion/murexide indicator system

Summary Complex formation between divalent metal ions and the hydrophilic murexide anion in the presence of anionic micelles has been employed to study aspects of micelle formation, the binding of divalent metal ions to micelles, and the kinetics of metal-complex formation in the presence of micelles.

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Zusammenfassung Die Komplexbildung zweiwertiger Metallionen mit dem hydrophilen Indikator Murexid wurde in Gegenwart anionischer Mizellen untersucht. Die Indikatorreaktion wurde benutzt, um Aussagen über Mizellbildung, Bindung zweiwertiger Metallionen an Mizellen und die Kinetik der Metallkomplexbildung bei Anwesenheit von Mizellen zu erhalten.

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With 8 figures and 1 table

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Dedicated to Prof.G. Rehage on the occasion of his 60th birthday.     

4He+ ion beam irradiation induced modification of poly(dimethylsiloxane). Characterization by infrared spectroscopy and ion beam analytical techniques

In this study we investigated the chemical and surface wettability changes of poly(dimethylsiloxane) (PDMS) induced by a 2.0 MeV He(+) beam irradiation. The chemical changes created in PDMS were characterized by universal attenuated total reflectance infrared (UATR-FTIR) spectroscopy, while the changes of the wettability were determined by contact angle measurements. In a separate analysis, hydrogen depletion was also investigated with a 1.6 MeV He(+) beam by applying the elastic recoil detection analysis (ERDA) and Rutherford backscattering spectrometry techniques simultaneously. The ERDA results showed that the hydrogen content of PDMS decreased irreversibly, which means that volatile products were formed under radiolysis, such as hydrogen or methane. The results were completed with UATR-FTIR measurements. We propose a complete reaction mechanism for the processes taking place in PDMS. These ion beam induced processes, such as chain scissions, cross-linking, and depletion of small molecular weight fragments, lead to the formation of a silica-like final product (SiO(x)). The significant chemical changes at the surface influence the wettability of PDMS, making it considerably more hydrophilic. The penetration depth of the 2.0 MeV He(+) ions is significantly higher compared to that of other surface modification techniques, which makes the modified layer thick and homogeneous; on the other hand, it is easily controllable by the energy of the incident ions.