Zero differential resistance in a double quantum well at high filling factors

The differential resistance r _xx in a GaAs double quantum well with two occupied size-quantization subbands have been studied at temperatures T = 1.6–4.2 K in magnetic fields B < 0.5 T. It has been found that differential resistance r _xx vanishes at the maxima of magneto-intersubband oscillations with an increase in the direct current I _dc. It has been shown that the discovered r _xx ≈ 0 state appears under the condition 2R _c E _H/ħω_c < 1/2, where R _c is the cyclotron radius of electrons at the Fermi level, E _H is the Hall electric field induced by the current I _dc, and ω_c is the cyclotron frequency.     

On the phase boundaries of the integer quantum Hall effect. Part II

It has been shown that the observation of the transitions between the dielectric phase and the integer-quantum-Hall-effect phases with the quantized Hall conductivity σ _xy ^q ≥ 3e ²/h announced in a number of works is unjustified. In these works, the crossing points of the magnetic-field dependence of the diagonal resistivity ρ _xx at different temperatures T and ω_cτ = 1 have been misidentified as the critical points of the phase transitions. In fact, these crossing points are due to the sign change of the derivative dρ _xx /dT owing to the quantum corrections to the conductivity. Here, ω_c = eB/m is the cyclotron frequency, τ is the transport relaxation time, and m is the effective electron mass.     

Resonance microwave photoresistance of a two-subband electron system at large filling factors

The microwave photoresistance of a double GaAs quantum well with two occupied size-quantization sub-bands E ₁ and E ₂ has been studied at the temperatures T = 1.6–4.2 K in the magnetic fields B < 0.5 T. The microwave photoresistance of such a system has been found to have a maximum amplitude when the maximum of the magneto-intersubband oscillations with the number k = (E ₂ − E ₁)ℏω_c coincides with the maximum or minimum of the ω/ω_c oscillations, where ω is the microwave frequency and ω_c is the cyclotron frequency. It has been shown that the resonance photoresistance that appears in the kth maximum of the magneto-intersubband oscillations is determined by the condition ℏω/(E ₂ − E ₁) = (j ± 0.2)/k, where k and j are positive integers.     

Zener tunneling between Landau levels in a double quantum well at high filling factors

Differential resistance r _xx in a double GaAs quantum well with two occupied size-quantization subbands has been studied at a temperature of 4.2 K in magnetic fields B < 2 T. The oscillations of r _xx with a period in the inverse magnetic field determined by the value of a dc bias current I _dc have been discovered in the electron system under investigation at high filling factors in the presence of I _dc. The amplitude of magneto-intersubband oscillations has been shown to increase in the r _xx oscillation maxima, while the oscillation reversal has been observed in the minima. The discovered oscillations have been shown to be due to Zener tunneling of electrons between Landau levels tilted by a Hall electric field. The experimental data are qualitatively explained by the effect of intersubband transitions on the I _dc-dependent component of the electron distribution function.     

Ponderomotive acceleration of electrons by a whistler pulse

A Gaussian whistler pulse is shown to cause ponderomotive acceleration of electrons in a plasma when the peak whistler amplitude exceeds a threshold value and the whistler frequency is greater than half the cyclotron frequency, ω>ω _c /2. The threshold amplitude decreases with the ratio of plasma frequency to electron cyclotron frequency, ω _p /ω _c . However, above the threshold amplitude, the acceleration energy decreases with ω _p /ω _c . The electrons gain velocities about twice the group velocity of the whistler.     

Submillimetric cyclotron resonance linewidths and electron relaxation time in copper

For the first time submillimetric microwaves (λ<1 mm) are used to observe Azbel' Kaner cyclotron resonance in metals. The very high frequency used (typicallyF≅400 GHz) gives a large value ofωτ (typically 500) and therefore very sharp peaks. The fundamental resonance fieldH _c=m ^* cω/e is rather high (typically 200 KG), so subharmonicsH _c/n can be observed at many values ofH in the field region 0–27 KG. If relatively few electrons participate in the resonance and ifω _cτ≧50 (ω _c=eH/m ^* c,τ relaxation time) thenChambers has shown that the line shapes are independent of relaxation time while the fractional linewidthΔH/H varies as l/ωτ. For the belly orbit in pure copper the conditions of Chambers' theory are satisfied forH≧20 KG parallel to [111] axis.m ^* is a minimum andτ=1.8×10⁻¹⁰ s.     

Influence of transport current and thermal fluctuations on the resistive properties of HTSC+CuO composites

Measurements of the temperature dependence of the electrical resistance R(T) below the superconducting transition temperature have been performed at different values of the transport current in HTSC+CuO composites modeling a network of weak S-I-S Josephson junctions (S—superconductor, I—insulator). It has been shown experimentally that the temperature dependence R(T) at different values of the transport current is adequately described by means of the mechanism of thermally activated phase slippage developed by Ambegaokar and Halperin for tunnel structures. Within the framework of this model we have numerically calculated the temperature dependence of the critical current J _c(T) as defined by various criteria. Qualitative agreement obtains between the measured and calculated temperature dependences J _c(T). Fiz. Tverd. Tela (St. Petersburg) 41, 969–974 (June 1999)     

Contribution of superconducting grains and grain boundaries to the magnetoresistance of ceramic YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7 − δ</Subscript> high-temperature superconductors in weak magnetic fields

The current-voltage characteristics of granular YBa₂Cu₃O_6.95 high-temperature superconductor samples have been measured at a temperature of 77.3 K in external transverse magnetic fields H _ext with a strength of up to H _ext ≈ 500 Oe for low transport current densities (0.1 A/cm² ≤ j ≤ 0.6 A/cm²). The current-voltage characteristics obtained have been used to construct dependences of the magnetoresistance ρ on the quantities j (ρ(j) _Hext=const) and H _ext(ρ(H _ext) _{j = const}). It has been revealed that the current and field dependences of the magnetoresistance exhibit anomalies at H _ext ≥ H _c1g , where H _c1g is the lower critical field of superconducting grains. A comparative analysis of the dependences ρ(j)H _{ext = const} and ρ(H _ext) _{j = const} has made it possible to develop concepts regarding the influence of the processes of redistribution of the magnetic field between grain boundaries and superconducting grains on the transport and galvanomagnetic properties of granular high-temperature superconductors. It has been established that the field dependences of the magnetoresistance exhibit specific features associated with the beginning of penetration of Josephson vortices into grain boundaries in the magnetic field H _c1J and with the breaking of a continuous chain of Josephson junctions in the magnetic field H _c2J .     

Dissipative Cyclotron Motion of a Charged Quantum-Oscillator and Third Law

In this work, low temperature thermodynamic behavior in the context of cyclotron motion of a charged-oscillator with different coupling schemes is analyzed. We find that finite dissipation substitutes the zero-coupling result of exponential decay of entropy by a power law behavior at low temperature. The power of the power law explicitly depends on the nature of the power spectrum of the heat bath. It is seen that velocity–velocity coupling is the most advantageous coupling scheme to ensure the third law of thermodynamics. The cases of confinement (ω ₀≠0) and without confinement (ω ₀=0) are discussed separately. It is also revealed that different thermodynamic functions are independent of magnetic field at very low temperature for ω ₀≠0, but they depend on cyclotron frequency (ω _c =eB/mc) for ω ₀=0.     

Microwave induced magnetoresistance oscillations at the subharmonics of the cyclotron resonance

The magnetoresistance oscillations that occur in a two-dimensional electron system exposed to strong microwave radiation when the microwave frequency ω coincides with the nth subharmonic of the cyclotron frequency ω _c have been investigated for n = 2, 3, and 4. It is shown that these subharmonic features can be explained within a nonequilibrium energy distribution function picture without invoking multiphoton absorption processes. The existence of a frequency threshold above which such oscillations disappear lends further support to this explanation. The text was submitted by the authors in English.     

Quantum corrections to the conductance of n-GaAs films in a strong magnetic field

The conductance of doped n-GaAs films is studied experimentally as a function of magnetic field and temperature in strong magnetic fields right up to the quantum limit (ħω_c = E _F). The Hall conductance G _xy is virtually independent of temperature T until the transverse conductance G _xx is quite large compared with e ²/h. In strong fields, when G _xx becomes comparable to e ²/h, G _xy starts to depend on T. The difference between the conductances G _xx at the two temperatures 4.2 and 0.35 K depends only weakly on the magnetic field H over a wide range of magnetic fields, while the conductances G _xx themselves vary strongly. The results can be explained by quantum corrections to the conductance as a result of the electron-electron interaction in the diffusion channel. The possibility of quantization of the Hall conductance as a result of the electron-electron interaction is discussed. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 3, 201–206 (10 February 1998)     

A study of the plasticity in the vortex matter across the second magnetization peak in a YBCO crystal via measurements of minor hysteresis loops

Results of an investigation of the path dependence of the critical current density J _c due to the plastic deformation of the flux line lattice in a weakly pinned YBa₂Cu₃O_7-δ (YBCO) crystal for H‖c are reported. The procedure of minor hysteresis loops has been used to explore the path dependence of J _c and the metastability effects. Contrary to the behavior observed in low T _c systems. in YBCO it is found that at low temperatures, the multivaluedness in J _c(H) could persist beyond the notional peak field H _p, at which the anomalous variation in J _c(H) reaches its maximum value.     

Collective electronic excitations in a semiconductor superlattice in the Landau and Wannier-Stark ladder regime

Using a mean-field approximation, we have developed a systematic treatment of collective electronic modes in a semiconductor superlattice (SL) in the presence of strong electric and magnetic fields parallel to the SL axis. The spectrum of collective modes with zero wavevector along the SL axis is shown to consist of a principle magnetoplasmon mode and an infinite set of Bernstein-like modes. For non-zero wavevector along the SL axis, in addition to the cyclotron modes, extra collective modes are found at the frequencies |Nω _c±Mω _s|, which we call cyclotron-Stark modes (ω _c and ω _s are respectively the cyclotron and Stark frequencies, N and M are integer numbers). The frequencies of the modes propagating in “oblique” direction with respect to the SL axis show oscillatory behavior as a function of electric field strength. All the modes considered have very weak spatial dispersion and they are not Landau damped. The specific predictions made for the dispersion relations of the collective excitations should be observable in resonant Raman scattering experiments. Received 29 August 2002 / Received in final form 25 February 2003 Published online 4 June 2003 RID="a" ID="a"e-mail: 612033@inbox.ru     

两个子带占据的In0.53Ga0.47As/In0.52Al0.48As量子阱中填充因子的变化规律

研究了低温(15K)和强磁场(0—13T)条件下, InP基In_053Ga_047As/In_052Al_048As量子阱中电子占据两个子带时填充因子随磁场的变化规律.结果表明,在电子自旋分裂能远小于朗道能级展宽的情况下,如果两个子带分裂能是朗道分裂能的整数倍时,即ΔE₂₁=kω_c(其中k为整数),填充因子为偶数;当两个子带分裂能为朗道分裂能的半奇数倍时,即ΔE₂₁=(2k+1)ω_c/2,填充因子出现奇数. 关键词： 053Ga_047As/In_052Al_048As量子阱')" href="#">In_053Ga_047As/In_052Al_048As量子阱 填充因子 磁输运     

Hall breakdown in a modulation-doped GaAs/AlAs heterostructure

The effect of dc current I _dc on the electron transport in a GaAs quantum well with AlAs/GaAs superlattice barriers is studied experimentally at a temperature of 4.2 K in magnetic fields up to 2 T. A sharp increase in resistance R _xx is observed in magnetic fields higher than the critical field B _c. The value of B _c is found to decrease with increasing the current I _dc. The phenomenon observed in the experiment is qualitatively explained by the electric breakdown of superlattice barriers under the action of the Hall field.     

Is the Abrikosov model applicable for describing electronic vortices in plasmas?

A new model of electronic vortices in plasma is studied. The model assumes that the profile of the Lagrangian invariant I, equal to the ratio I=Ω/n of the electronic vorticity to the electron density, is given. The proposed approach takes into account the magnetic Debye scale r _B ≃B/4πen, which leads to breakdown of plasma quasineutrality. It is shown that the Abrikosov singular model cannot be used to describe electron vortices in plasmas because of the fundamental limitation on the electron vorticity on the axis of a vortex in a plasma. Analysis of the equations shows that in the model considered for the electronic vorticity, the total magnetic flux decreases when the size r ₀ of the region in which I≠0 becomes less than c/ω_pe (ω_pe is the electron plasma frequency). For ω _pe r ₀/c≪1, an electronic vortex is formed in which the magnetic flux decreases as r ₀ ² and the inertial component predominates in the electronic vorticity. The structure arising as ω _pe r ₀/c⇒0 is a narrow “hole” in the electron density, which can be identified from the spectrum of electromagnetic waves in this region. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 7, 461–466 (10 April 1998)     

Quantum Hall effect in a quasi-three-dimensional HgTe film

Magnetotransport of a quasi-three-dimensional (100-nm) HgTe film in quantized magnetic fields has been experimentally investigated. It has been found that the film exhibits pronounced quantization of the Hall resistance accompanied by deep minima of the dissipative resistance. A transition from the three-dimensional behavior of Shubnikov-de Haas oscillations in semiclassical magnetic fields (ω_cτ _q ≤ 1) to a two-dimensional one in the quantum-Hall-effect regime has been discovered. The conduction electron cyclotron effective mass in mercury telluride has been determined from the temperature dependence of the Shubnikov-de Hass oscillations in such magnetic fields.     

Length of the Instability Intervals for Hill's Equation

The length of instability intervals is investigated for the Hill equation y′′+ω(ω− 2∈p(x)y = 0, where p(x) has an infinite Fourier series of coefficients c _n. For any small ∈ it is shown that these lengths are completely characterized by the c _n's.     

Leading-twist contribution to χ<Subscript><Emphasis Type="Italic">c</Emphasis>0,2</Subscript> → ωω decays

The leading twist contribution to χ _c0,2 → ωω decays in the color-singlet approximation is considered. It is shown that the prediction for Br(χ _c0 → ωω) is in good agreement with the experimental data, while Br(χ _c2 → ωω) differs from the experiment significantly. The text was submitted by the author in English.