Dynamic conductivity of interacting electrons in open mesoscopic structures

It is shown that in one-dimensional mesoscopic structures the electron-electron interaction leads to qualitatively new effects in the dynamic conductivity which are best manifested in the frequency dependence of the impedance. Interelectronic repulsion increases the resistance and narrows the resonance dips of the resistance at transit frequencies. Interelectronic attraction gives rise to resonance peaks of the resistance against a high-conductivity background. These effects are due to the reflection of bosonic excitations of a Luttinger liquid from the boundaries of a quantum channel with current-lead electrodes and to resonances of these excitations over the length of the channel. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 1, 40–44 (10 July 1997)     

Ferromagnetism mediated by few electrons in a semimagnetic quantum dot

A (II,Mn)VI diluted magnetic semiconductor quantum dot with an integer number of electrons controlled with a gate voltage is considered. We show that a single electron is able to induce a collective spontaneous magnetization of the Mn spins, overcoming the short range antiferromagnetic interactions, at a temperature order of 1 K, 2 orders of magnitude above the ordering temperature in bulk. The magnetic behavior of the dot depends dramatically on the parity of the number of electrons in the dot.     

用子动力学理论研究介观体系的输运

从子动力学理论出发,计算了介观体系的输运公式,得到了包含高阶修正的Kubo公式,这对于任意外场的作用下的介观体系具有重要的意义     

Ballistic transport in InSb mesoscopic structures

Two different device geometries are fabricated to investigate ballistic transport of electrons in low-dimensional InSb structures. Negative bend resistance is observed in four-terminal devices of channel widths ranging from 0.2 to 0.65 μm. We also report the observation of conductance quantization in quantum point contacts fabricated using in-plane gates. The one-dimensional subbands depopulate with increasing transverse magnetic field up to 3 T. Zeeman splitting is resolved at magnetic fields above 0.9 T.     

Josephson transport in complex mesoscopic structures

A universal spectral equation is derived for Andreev bound states in superconducting quantum junctions, relating bound state energies with the normal electron scattering amplitudes. The equation is applied to calculation of d.c. Josephson effect in mesoscopic S-2DEG-S junctions.     

Transport through quantum dots in mesoscopic circuits

We study the transport through a quantum dot, in the Kondo Coulomb blockade valley, embedded in a mesoscopic device with finite wires. The quantization of states in the circuit that hosts the quantum dot gives rise to finite size effects. These effects make the conductance sensitive to the ratio of the Kondo screening length to the wires length and provide a way of measuring the Kondo cloud. We present results obtained with the numerical renormalization group for a wide range of physically accessible parameters.     

Nuclear Spin relaxation mediated by Fermi-edge electrons in n-type GaAs

A method based on the optical orientation technique was developed to measure the nuclear-spin lattice relaxation time T ₁ in semiconductors. It was applied to bulk n-type GaAs, where T ₁ was measured after switching off the optical excitation in magnetic fields from 400 to 1200 G at low (< 30 K) temperatures. The spin-lattice relaxation of nuclei in the studied sample with n _D = 9 × 10¹⁶ cm^?3 was found to be determined by hyperfine scattering of itinerant electrons (Korringa mechanism) which predicts invariability of T ₁ with the change in magnetic field and linear dependence of the relaxation rate on temperature. This result extends the experimentally verified applicability of the Korringa relaxation law in degenerate semiconductors, previously studied in strong magnetic fields (several Tesla), to the moderate field range.     

Transport properties of Dirac electrons in graphene based double velocity-barrier structures in electric and magnetic fields

Using transfer matrix method, transport properties in graphene based double velocity-barrier structures under magnetic and electric fields are numerically studied. It is found that velocity barriers for the velocity ratio (the Fermi velocity inside the barrier to that outside the barrier) less than one (or for the velocity ratio greater than one) have properties similar to electrostatic wells (or barriers). The velocity barriers for the velocity ratio greater than one significantly enlarge the resonant tunneling region of electrostatic barriers. In the presence of magnetic field, the plateau width of the Fano factor with a Poissonian value shortens (or broadens) for the case of the velocity ratio less than one (or greater than one). When the Fermi energy is equal to the electrostatic barrier height, for different values of the velocity ratio, both the conductivities and the Fano factors remain fixed.     

Generation of mesoscopic magnetic structures by local laser action

New effects are observed wherein the internal structure of the domain walls in a thin magnetic iron garnet film are modified by the action of focused laser radiation. A single laser pulse with increasing power gives rise to the following: 1) displacement of vertical Bloch lines in a domain wall; 2) generation of a pair of vertical Bloch lines on initially line-free walls; and, 3) an irreversible change in shape of a domain wall and the domain structure as a whole. The mechanism leading to the generation and displacement of Bloch lines is connected with the motion of domain walls which is induced by a local change in the distribution of demagnetizing fields as a result of a heating-induced decrease of the magnetization in the focal spot of the laser radiation. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 6, 398–402 (25 September 1997)     

Andreev reflections and magnetoresistance in ferromagnet-superconductor mesoscopic structures

An analysis is made of the change in the resistance of a nanostructure consisting of a diffusive ferromagnetic (F) wire and normal metal electrodes, due to the onset of superconductivity (S) in the normal electrode and Andreev scattering processes. The superconducting transition results in an additional contact resistance arising from the necessity to match the spin-polarized current in the F-wire to the spinless current in the S reservoir, which is comparable to the resistance of a piece of F wire with length equal to the spin relaxation length. It is also shown that in the absence of spin relaxation the resistance of a two-domain structure is the same for a ferro-or antiferromagnetic configuration if one electrode is in the superconducting state. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 7, 497–502 (10 April 1999) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Spin relaxation of conduction electrons in GaAs

We have used optical spin orientation techniques to measure T₁ of conduction electrons in GaAs (NinA ≈ 10¹⁷ cm^-3) for 4.7 K ? T ? 200 K. From Hall effect measurements we estimated the electron momentum relaxation time τ_p. For 50 K ? T ? 200 K, the product T₁τ_p agrees with our earlier order of magnitude estimate of the D'yakonov-Perel' mechanism, in which band structure induced precession is strongly narrowed by momentum relaxation. The Elliott mechanism is one to two orders of magnitude weaker.     

Diffusion coefficient of hot electrons in GaAs

The longitudinal and transverse diffusion coefficient of hot electrons in GaAs at a lattice temperature of 300 K has been calculated by the Monte Carlo technique. The calculations showed that drift velocity and diffusion coefficient of hot electrons in GaAs can be fitted to available experimental data if the three-valley Γ-L-X model is used. The estimates of some parameter values of GaAs conduction band have been made.     

Transport of photoexcited electrons in films

Within a one-dimensional model we obtain an analytic expression for the probability function describing primary electron transport, with account of multiple electron scattering processes by phonons and separation boundaries of the emission-active layer. Conditions are formulated for which the sublayer effect can be neglected.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 74–79, February, 1985.     

Light scattering by electrons in the excitonic absorption region of GaAs

A study has been made of the effect of the additional generation of photoexcited electrons on the excitonic absorption and luminescence spectra of ultrapure GaAs samples at T=2 K. The observed increase in the absorption coefficient for the ground (n=1) excitonic state is shown to originate from the polariton character of the energy spectrum of this state and to be due to an increase of polariton damping. The increased damping observed under electron generation is caused by polariton scattering from hot electrons as the latter undergo thermalization. As a result, the polaritons are heated. The changes observed in the luminescence spectra are produced by the reverse effect of electron heating and polariton cooling. Fiz. Tverd. Tela (St. Petersburg) 39, 1011–1016 (1997)     

Enhancement of the photoluminescence intensity of a single InAs/GaAs quantum dot by separate generation of electrons and holes

It is demonstrated that the microphotoluminescence (μPL) spectrum of a single InAs/GaAs self-assembled quantum dot (QD) undergoes considerable changes when the primary laser excitation is complemented with an additional infrared laser. The primary laser, tuned slightly below the GaAs band gap, provides electron-hole pairs in the wetting layer (WL), as well as excess free electrons from ionized shallow acceptors in the GaAs barriers. An additional IR laser with a fixed energy well below the QD ground state transition generates excess free holes from deep levels in GaAs. The excess electron and hole will experience diffusion separately, due to the time separation between the two events of their generation, to eventually become captured into the QD. Although the generation rates of excess carries are much lower than that of the electron-hole pair generation in the WL, they considerably influence the QD emission at low temperatures. The integrated PL intensity increases by several times as compared to single-laser excitation, and the QD exciton spectrum is redistributed in favor of a more neutral charge configuration. The dependence of the observed phenomenon on the powers of the two lasers and the temperature has been studied and is consistent with the model proposed. The concept of dual excitation could be successfully applied to different low-dimensional semiconductor structures in order to manipulate their charge state and emission intensity. The text was submitted by the authors in English.     

Collective quantum tunneling of strongly correlated electrons in commensurate mesoscopic rings

We present a new effect that is possible for strongly correlated electrons in commensurate mesoscopic rings: the collective tunneling of electrons between classically equivalent configurations, corresponding to ordered states possessing charge and spin density waves (CDW, SDW) and charge separation (CS). Within an extended Hubbard model at half filling studied by exact numerical diagonalization, we demonstrate that the ground state phase diagram comprises, besides conventional critical lines separating states characterized by different orderings (e.g. CDW, SDW, CS), critical lines separating phases with the same ordering (e.g. CDW-CDW) but with different symmetries. While the former also exist in infinite systems, the latter are specific for mesoscopic systems and directly related to a collective tunnel effect. We emphasize that, in order to construct correctly a phase diagram for mesoscopic rings, the examination of CDW, SDW and CS correlation functions alone is not sufficient, and one should also consider the symmetry of the wave function that cannot be broken. We present examples demonstrating that the jumps in relevant physical properties at the conventional and new critical lines are of comparable magnitude. These transitions could be studied experimentally e.g. by optical absorption in mesoscopic systems. Possible candidates are cyclic molecules and ring-like nanostructures of quantum dots. Received 27 November 2000     

Transport properties of MgB2 single crystals doped with electrons and holes

The thermoelectric power of C, Mn, C:Li, and Al:Li substituted MgB₂ single crystals has been investigated in the temperature range 10-300 K. Both the in-plane (S_ab) and the out-of-plane (S_c) thermopowers are positive for the non-substituted crystal and both S_ab and S_c change a sign for crystals doped with electrons where C is substituted for B in the amount larger than 5 at%. When Li is substituted for Mg, the π band rather than the σ band is doped with holes and the doping effects are much more subtle. The anisotropy ratio of the non-substituted crystal S_ab/S_c≈3 and this ratio is strongly reduced by the substitution of C. Isovalent magnetic Mn ions, which substitute for Mg with a drastic reduction of T_c, do not influence the values and temperature dependences of both S_ab and S_c.