Photo-curable epoxy functionalized cyclotetrasiloxane as a gate dielectric for organic thin film transistors

We synthesized a new photo-curable organic/inorganic hybrid material, cyclotetrasiloxane (CTS) derivative containing cyclohexene-1,2-epoxide functional groups (CTS-EPOXY), and its characteristics are compared with a prototypical organic gate insulator of poly(4-vinylphenol) (PVP) in the organic thin film transistors (OTFTs) using pentacene as an active p-type organic semiconductor. Compared with PVP, CTS-EPOXY shows better insulating characteristics and surface smoothness. A metal/insulator/metal (MIM) device with the 300-nm-thick CTS-EPOXY film shows more than two orders of magnitude lower current (less than 40 nA/cm² over the voltage range up to 60 V) compared with PVP. In addition, the pentacene TFT with CTS-EPOXY as a gate dielectric layer shows slightly higher field-effect mobility of μ_FET = 0.20 cm²/V s compared to that with PVP.     

Electrical properties of carbon-nanotube-network transistors in air after gamma irradiation

We experimentally evaluate the electrical properties of carbon nanotube (CNT)-network transistors before and after ⁶⁰Co gamma-ray irradiation up to 50 kGy in an air environment. When the total dose is increased, the degree of the threshold voltage (V_th) shift towards positive gate voltages in the drain current–gate voltage (I_D–V_GS) characteristics decreases for total irradiation doses above 30 kGy, although it is constant below 30 kGy. From our analysis of the I_D–V_GS characteristics along with micro-Raman spectroscopy, the gamma-ray irradiation does not change the structure of the CNT network channel for total doses up to 50 kGy; it instead generates charge traps near the CNT/SiO₂ gate insulator interfaces. These traps are located within the SiO₂ layer and/or the adsorbate on the device surface. The positively charged traps near the CNT/SiO₂ interface contribute less to the V_th shift than the interface dipoles at the CNT/metal electrode interfaces and the segment of the CNT network channel below doses of 30 kGy, while the contribution of the charge traps increases for total doses above 30 kGy. Our findings indicate the possibility of the application of CNT-network transistors as radiation detectors suitable for use in air for radiation doses above 30 kGy.     

Influence of thickness of functional layer on performance of organic salt-doped OLED with ITO/PVK:PBD:TBAPF6/Al structure

The effect of thickness of functional layer on the electrical and electroluminescence (EL) properties of single-layer OLED with ITO/PVK:PBD:TBAPF₆/Al structure were investigated where indium tin oxide (ITO) was used as anode, poly(9-vinylcarbazole) (PVK) as polymeric host, 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) as electron-transporting molecule, tetrabutylammonium hexafluorophosphate (TBAPF₆) as organic salt dopant and aluminium (Al) as cathode. A unique transition phenomenon at high bias voltage in the devices was observed and the transition was reversible. The transition voltage and turn on voltage decreased with the decrease of functional layer thickness. The turn on voltage was approximately 5.5 V and 6.5 V for 55-nm-thick and 95-nm-thick devices, respectively. However, the current efficiency of 95-nm-thick device was higher than the 55-nm-thick device. More interestingly, the Commission Internationale d’Eclairage (C.I.E.) coordinates of EL spectra of 95-nm-thick device at bias voltage ranging from 7 V to 13 V located in the white light region even without any dye doping. The PL and EL spectra were found completely different. PBD electromer was proposed to dominate the EL spectrum, but the contribution from PVK–PBD electroplex cannot be completely ruled out.     

Effects of Ga contents on properties of CIGS thin films and solar cells fabricated by co-evaporation technique

This study examined the effects of Ga content in the CIGS absorber layer on the properties of the corresponding thin films and solar cells fabricated using a co-evaporation technique. The grain size of CIGS films decreased with increasing Ga content presumably because Ga diffusion during the 2nd stage of the co-evaporation process is more difficult than In diffusion. The main XRD peaks showed a noticeable shift to higher diffraction angles with increasing Ga content, which was attributed to Ga atoms substituting for In atoms in the chalcopyrite structure. Band gap energy and the net carrier concentration of CIGS films increased with Ga/(In + Ga) ratios. Regarding the solar cell parameters, the short circuit current density (J_SC) decreased linearly with Ga/(In + Ga) ratios due to the lack of absorption in the long-wavelength portion of the spectrum, while the open circuit voltage (V_OC) increase with those. However, V_OC values at high Ga/(In + Ga) regions (>0.35) was far below than those extrapolated from the low Ga contents regions, finally resulting in an optimum Ga/(In + Ga) ratio of 0.28 where the solar cell showed the highest efficiency of 15.56% with V_OC, J_SC and FF of 0.625 V, 35.03 mA cm⁻² and 0.71, respectively.     

Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices

A non-volatile flash memory device based on metal oxide semiconductor (MOS) capacitor structure has been fabricated using platinum nano-crystals(Pt–NCs) as storage units embedded in HfAlO_x high-k tunneling layers. Its memory characteristics and tunneling mechanism are characterized by capacitance–voltage(C–V) and flat-band voltage-time(ΔV_FB-T) measurements. A 6.5 V flat-band voltage (memory window) corresponding to the stored charge density of 2.29 × 10¹³ cm⁻² and about 88% stored electron reserved after apply ±8 V program or erase voltage for 10⁵ s at high frequency of 1 MHz was demonstrated. Investigation of leakage current–voltage(J–V) indicated that defects-enhanced Pool-Frenkel tunneling plays an important role in the tunneling mechanism for the storage charges. Hence, the Pt–NCs and HfAlO_x based MOS structure has a promising application in non-volatile flash memory devices.     

Homoepitaxial growth of MOD-YBCO thick films on evaporated and MOD templates

We have prepared metal organic deposition (MOD)-YBCO thick films by repeating the coating-pyrolysis-crystallization procedure onto ～100-nm-thick evaporated and MOD templates. Surface morphology of the template was found to strongly affect the homoepitaxial growth of MOD-YBCO layers on the template; namely, the epitaxial growth of MOD-YBCO on the evaporated template was much easier than that on the MOD template. A 220-nm-thick epitaxial MOD-YBCO film was successfully prepared on the 100-nm-thick evaporated-YBCO template to obtain a 320-nm-thick YBCO film, which exhibited J_c = 2.44 MA/cm² and I_c = 78 A/cm. The I_c value has significantly increased from 37 A/cm for the evaporated-template.     

Control of electric field in 4H-SiC UMOSFET: Physical investigation

In this paper, we show how breakdown voltage (V_BR) and the specific on-resistance (R_on) can be improved simply by controlling of the electric field in a power 4H-SiC UMOSFET. The key idea in this work is increasing the uniformity of the electric field profile by inserting a region with a graded doping density (GD region) in the drift region. The doping density of inserted region is decreased gradually from top to bottom, called Graded Doping Region UMOSFET (GDR-UMOSFET). The GD region results in a more uniform electric field profile in comparison with a conventional UMOSFET (C-UMOSFET) and a UMOSFET with an accumulation layer (AL-UMOSFET). This in turn improves breakdown voltage. Using two-dimensional two-carrier simulation, we demonstrate that the GDR-UMOSFET shows higher breakdown voltage and lower specific on-resistance. Our results show the maximum breakdown voltage of 1340 V is obtained for the GDR-UMOSFET with 10 µm drift region length, while at the same drift region length and approximated doping density, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 V and 703 V, respectively.     

Transparent CdO/n-GaN(0001) heterojunction for optoelectronic applications

Undoped CdO films were prepared by sol–gel method. Transparent heterojunction diodes were fabricated by depositing n-type CdO films on the n-type GaN (0001) substrate. Current–voltage (I–V) measurements of the device were evaluated, and the results indicated a non-ideal rectifying characteristic with I_F/I_R value as high as 1.17×10³ at 2 V, low leakage current of 4.88×10⁻⁶ A and a turn-on voltage of about 0.7 V. From the optical data, the optical band gaps for the CdO film and GaN were calculated to be 2.30 eV and 3.309 eV, respectively. It is evaluated that interband transition in the film is provided by the direct allowed transition. The n-GaN (0001)/CdO heterojunction device has an optical transmission of 50–70% from 500 nm to 800 nm wavelength range.     

Determining the work function of a carbon-cone cold-field emitter by in situ electron holography

Cold-field emission properties of carbon cone nanotips (CCnTs) have been studied in situ in the transmission electron microscope (TEM). The current as a function of voltage, i(V), was measured and analyzed using the Fowler–Nordheim (F–N) equation. Off-axis electron holography was employed to map the electric field around the tip at the nanometer scale, and combined with finite element modeling, a quantitative value of the electric field has been obtained. For a tip-anode separation distance of 680 nm (measured with TEM) and a field emission onset voltage of 80 V, the local electric field was 2.55 V/nm. With this knowledge together with recorded i(V) curves, a work function of 4.8 ± 0.3 eV for the CCnT was extracted using the F–N equation.     

Improved electrical parameters of vacuum annealed Ni/4H-SiC (0 0 0 1) Schottky barrier diode

The reported work has been focused on the improvement of electrical parameters of Schottky diode using vacuum annealing at mild temperature in Ar gas ambient. Nickel Schottky barrier diodes were fabricated on 50 μm epitaxial layer of n-type 4H-SiC (0 0 0 1) substrate. The values of leakage current, Schottky barrier height (?_B), ideality factor (η) and density of interface states (N_SS) were obtained from experimentally measured current–voltage (I–V) and capacitance–voltage (C–V) characteristics before and after vacuum annealing treatment. The data revealed that ?_B, η and reverse leakage current for the as-processed diodes are 1.25 eV, 1.6 and 1.2 nA (at ?100 V), respectively, while for vacuum annealed diodes these parameters are 1.36 eV, 1.3 and 900 pA (at same reverse voltage). Improved characteristics have been resulted under the influence of vacuum annealing because of lesser number of minority carrier generation due to incessant reduction of number of available discrete energy levels in the bandgap of 4H-SiC substrate and lesser number of interface states density at Ni/4H-SiC (0 0 0 1) interface.     

Microscopic magnetic properties of (V1−xTix)2O3 near the phase boundary of the metal–insulator transition

Magnetic susceptibility (χ) and ⁵¹V NMR have been measured in (V_1−xTi_x)₂O₃ near the phase boundary of the metal–insulator transition. It is established that the transition from antiferromagnetic insulating (AFI) to antiferromagnetic metallic phases near x_c≈0.05 is not quantum critical, but is discontinuous with a jump of the transition temperature. In the AFI phase at 4.2 K, we observed the satellite in the zero-field ⁵¹V NMR spectrum around 181 MHz in addition to the ‘host’ resonance around 203 MHz. The satellite is also observable in the paramagnetic metallic phase of the x=0.055 sample. We associated the satellite with the V sites near Ti, which are in the V³⁺-like oxidation state, but has different temperature dependence of the NMR shift from that of the host V site. The host d-spin susceptibility for x=0.055 decreases below ∼60 K, but remains finite in the low-temperature limit.     

Microfluidic acoustic trapping force and stiffness measurement using viscous drag effect

It has recently been demonstrated that it was possible to individually trap 70 μm droplets flowing within a 500 μm wide microfluidic channel by a 24 MHz single element piezo-composite focused transducer. In order to further develop this non-invasive approach as a microfluidic particle manipulation tool of high precision, the trapping force needs to be calibrated to a known force, i.e., viscous drag force arising from the fluid flow in the channel. However, few calibration studies based on fluid viscosity have been carried out with focused acoustic beams for moving objects in microfluidic environments.In this paper, the acoustic trapping force (F_trapping) and the trap stiffness (or compliance k) are experimentally determined for a streaming droplet in a microfluidic channel. F_trapping is calibrated to viscous drag force produced from syringe pumps. Chebyshev-windowed chirp coded excitation sequences sweeping the frequency range from 18 MHz to 30 MHz is utilized to drive the transducer, enabling the beam transmission through the channel/fluid interface for interrogating the droplets inside the channel. The minimum force (F_min,trapping) required for initially immobilizing drifting droplets is determined as a function of pulse repetition frequency (PRF), duty factor (DTF), and input voltage amplitude (V_in) to the transducer. At PRF = 0.1 kHz and DTF = 30%, F_min,trapping is increased from 2.2 nN for V_in = 22 V_pp to 3.8 nN for V_in = 54 V_pp. With a fixed V_in = 54 V_pp and DTF = 30%, F_min,trapping can be varied from 3.8 nN at PRF = 0.1 kHz to 6.7 nN at PRF = 0.5 kHz. These findings indicate that both higher driving voltage and more frequent beam transmission yield stronger traps for holding droplets in motion.The stiffness k can be estimated through linear regression by measuring the trapping force (F_trapping) corresponding to the displacement (x) of a droplet from the trap center. By plotting F_trapping – x curves for certain values of V_in (22/38/54 V_pp) at DTF = 10% and PRF = 0.1 kHz, k is measured to be 0.09, 0.14, and 0.20 nN/μm, respectively. With variable PRF from 0.1 to 0.5 kHz at V_in = 54 V_pp, k is increased from 0.20 to 0.42 nN/μm. It is shown that a higher PRF leads to a more compliant trap formation (or a stronger F_trapping) for a given displacement x. Hence the results suggest that this acoustic trapping method has the potential as a noninvasive manipulation tool for individual moving targets in microfluidics by adjusting the transducer’s excitation parameters.     

Effect of series resistance on the performance of silicon Schottky diode in the presence of tin oxide layer

The current–voltage (I–V) characteristics of Al/SnO₂/p-Si (MIS) Schottky diodes prepared by means of spray deposition method have been measured at 80, 295 and 350 K. In order to interpret the experimentally observed non-ideal Al/SnO₂/p-Si Schottky diode parameters such as, the series resistance R_s, barrier height Φ_B and ideality factor n, a novel calculation method has been reported by taking into account the applied voltage drop across interfacial oxide layer V_i and ideality factor n in the current transport mechanism. The values obtained for V_i were subtracted from the applied voltage values V and then the values of R_s were recalculated. The parameters obtained by accounting for the voltage drop V_i have been compared with those obtained without considering the above voltage drop. It is shown that the values of R_s estimated from Cheung’s method were strongly temperature-dependent and decreased with increasing temperature. It is shown that the voltage drop across the interfacial layer will increase the ideality factor and the voltage dependence of the I–V characteristics. The interface state density N_ss of the diodes has an exponential growth with bias towards the top of the valance band for each temperature; for example, from 2.37 × 10¹³ eV⁻¹ cm⁻² in 0.70−E_v eV to 7.47 × 10¹³ eV⁻¹ cm⁻² in 0.62−E_v eV for 295 K. The mean N_ss estimated from the I–V measurements decreased with increasing the temperature from 8.29 × 10¹³ to 2.20 × 10¹³ eV⁻¹ cm⁻².     

Surface modified polymeric gate insulators for pentacene organic thin-film transistors

This paper demonstrates effects of a surface modification of polymeric gate insulators on a performance of organic thin-film transistor (OTFT). Pentacene OTFTs were fabricated with three types of polymer gate insulators—poly(4-vinylphenol) (PVP, G1) with comparably high dielectric constant, polyimide (PI, G2) with n-octadecyl (C₁₈) side chain, which resulted in hydrophobicity and low dielectric constant, and surface modified PVP(G3). The G3 was prepared by a spin-coating the solution of G2 onto the G1 film. We found that the n-octadecyl group of the G3 protruded from the surface and made the PVP surface more hydrophobic. The less polar surface strongly improved the device performance. Subthreshold slope (s.s.) of the OTFT with G3 as the gate insulator decreased significantly to 2.7 V/dec, which was much smaller than that of OTFTs fabricated with G1 (4.0 V/dec). That is, thin layer with fewer C₁₈ group in contact with pentacene induced a good electrical property like lower s.s. Further the higher dielectric constant of the underlying layer resulted in higher mobility of the device. The mobility (0.50 cm² V⁻¹ s⁻¹) of the OTFT with G3 as the gate insulator showed a higher value compared to that (0.25 cm² V⁻¹ s⁻¹) of the OTFT with G2.     

The oscillation condition and optical detection of series photodetector frequency circuit system matched with PMMA

In this study, the oscillation conditions for series photodetector frequency circuit system were proposed and verified experimentally. The effect of the capacitance C_p and oscillator phase θ on the oscillation ability of series photodetector frequency circuit system was investigated. It revealed that series photodetector frequency circuit system possessed excellent oscillation ability, but the oscillation ability decreased with increasing oscillator phase or decreasing capacitance C_p, even resulted in a cease-to oscillate zone. Moreover, this study elucidated the frequency response and optical detection of series photodetector frequency circuit system matched with PMMA for fluorescence dye concentration. In accordance with Hex fluorescence dye concentrations and frequency responses, the detection limit of fluorescence dye concentration 3.3 pmol/L can be measured by 100 MHz sensor system matched with PMMA. The results also showed that the frequency shift of 100 MHz sensor system matched with PMMA was linearly related to the logarithm of fluorescence dye concentration from 3.3 pmol/L to 33.3 μmol/L.     

Quick response PZT/P(VDF-TrFE) composite film pyroelectric infrared sensor with patterned polyimide thermal isolation layer

The fabrication method and the pyroelectric response of a single element infrared sensor based lead zirconate titanate (PZT) particles and polyvinylidene fluoride P(VDF-TrFE) copolymer composite thick film is reported in this paper. A special thermal insulation structure, including polyimide (PI) thermal insulation layer and thermal insulation tanks, was used in this device. The thermal insulation tanks were fabricated by laser micro-etching technique. Voltage responsivity (R_V), noise voltage (V_noise), noise equivalent power (NEP), and detectivity (D^*) of the PZT/P(VDF-TrFE) based infrared sensor are 1.2 × 10³ V/W, 1.25 × 10⁻⁶ V Hz^1/2, 1.1 × 10⁻⁹ W and 1.9 × 10⁸ cm Hz^1/2 W⁻¹ at 137.3 Hz modulation frequency, respectively. The thermal time constant of the infrared sensor τ_T was about 15 ms. The results demonstrate that the composite infrared sensor show a high detectivity at high chopper frequency, which is an essential advantage in infrared detectors and some other devices.     

Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

In this paper, we examined normally-OFF N-polar InN-channel Metal insulated semiconductor high-electron mobility transistors (MISHEMTs) device with a relaxed In_0.9Al_0.1N buffer layer. In addition, the enhancement-mode operation of the N-polar structure was investigated. The effect of scaling in N-polar MISHEMT, such as the dielectric and the channel thickness, alter the electrical behavior of the device. We have achieved a maximum drain current of 1.17 A/mm, threshold voltage (V_T) =0.728 V, transconductance (g_m) of 2.9 S mm⁻¹, high I_ON/I_OFF current ratio of 3.23×10³, lowest ON-state resistance (R_ON) of 0.41 Ω mm and an intrinsic delay time (τ) of 1.456 Fs along with high-frequency performance with f_t/ f_max of 90 GHz/109 GHz and 180 GHz/260 GHz for T_CH =0.5 nm at V_ds =0.5 V and 1.0 V. The numerically simulated results of highly confined GaN/InN/GaN/In_0.9Al_0.1N heterostructure MISHEMT exhibits outstanding potential as one of the possibility to replace presently used N-polar MISHEMTs for delivering high power density and frequency at RF/power amplifier applications.     

Structure and magnetic properties of 300-nm-thick FePt films with Hf underlayer

Structure, microstructure, magnetic properties of 300-nm-thick FePt films with 10-nm-thick Hf underlayer have been studied. The experimental results showed that the very thin Hf underlayer could promote the ordering at reduced temperatures by facilitating the nucleation of the order phase, leading to refined grain size and magnetic domain size. Therefore, the permanent magnetic properties of FePt films were enhanced. (BH)_max and H_c of FePt films were greatly enhanced from 5.0–21.0 MGOe and 1.4–11.0 kOe for single layer to 10.2–23.6 MGOe and 4.5–13.2 kOe for Hf-underlayered films annealed in T_a region of 400–600 °C, respectively. Nevertheless, the severe interdiffusion between the Hf and FePt layers at T_a=800 °C resulted in the decreased S, coarsened surface morphology, grain and magnetic domain sizes, and therefore the slightly decreased (BH)_max to 18.0 MGOe.     

Fabrication and characteristics of photodiode based on ZnO nanowire arrays and spray-coated regioregular P3HT layers

A photodiode based on well-aligned ZnO nanowire arrays (ZNAs) and spray-coated regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) layers hybrid hetero junctions was fabricated, and its electrical characteristics in dark and under illumination with a solar simulator were investigated. Current–voltage (I–V) data of ITO/ZNAs/P3HT/Ag device in dark and under illumination showed typical diode characteristics. A rectification ratio (RR) of 22.7 at 1.7 V and a low turn-on voltage of 0.4 V in dark were obtained. Also, the photodiode with high photo-response in the order of 0.31 A/W at -2 V using 80 mW/cm² illumination power was observed. Upon increasing illumination power from 40 to 100 mW/cm², the RR value for the photodiode continuously was improved with a highest value of 12.5.     

Structural and electrochemical properties of layered lithium nitridocuprates Li3 − xCuxN

We report a systematic study of the layered lithium nitridocuprates Li_3 ? xCu_xN with 0.1 ≤ x ≤ 0.39. The structural data obtained from experimental XRD patterns, Rietveld refinements and unit cell parameters calculation vs x, indicate that copper (I) substitute interlayer lithium ions in the parent nitride Li₃N to form the Li_3 ? xCu_xN compound without any Li vacancy in the Li₂N^? layer. Electrochemical results report Li insertion into the corresponding layered structures cannot take place in the 1.2/0.02 V voltage range as in the case of lithium into nitridonickelates and nitridocobaltates. However, in the initial charge process of Li_3 ? xCu_xN at 1.4 V leading to a specific capacity higher than 1000 mA h/g, the oxidation of copper and nitride ions is probably involved inducing a strong structural disordering process. As a consequence a new rechargeable electrochemical system characterized by discharge–charge potential of ≈ 0.3 V/1.2 V appears from the second cycle. Cycling experiments 0.02 V voltage/0.02 V range induce a complete destruction of the layered host lattice and the presence of Cu₃N in the charge state suggests a conversion reaction. The capacity recovered in the 1.4/0.02 V range practically stabilizes around 500 mA h/g after 20 cycles.