Resonance microwave photoresistance of a two-subband electron system at large filling factors

The microwave photoresistance of a double GaAs quantum well with two occupied size-quantization sub-bands E ₁ and E ₂ has been studied at the temperatures T = 1.6–4.2 K in the magnetic fields B < 0.5 T. The microwave photoresistance of such a system has been found to have a maximum amplitude when the maximum of the magneto-intersubband oscillations with the number k = (E ₂ − E ₁)ℏω_c coincides with the maximum or minimum of the ω/ω_c oscillations, where ω is the microwave frequency and ω_c is the cyclotron frequency. It has been shown that the resonance photoresistance that appears in the kth maximum of the magneto-intersubband oscillations is determined by the condition ℏω/(E ₂ − E ₁) = (j ± 0.2)/k, where k and j are positive integers.     

Bichromatic microwave photoresistance of a two-dimensional electron system

We explore experimentally bichromatic (frequencies omega(1) and omega(2)) photoresistance of a two-dimensional electron system in the regimes of microwave-induced resistance oscillations and zero-resistance states. We find bichromatic resistance to be well described by a superposition of omega(1) and omega(2) and components, provided that both monochromatic resistances are positive. This relation holds even when the oscillation amplitudes are small and one could expect additive contributions from monochromatic photoresistances. In contrast, whenever a zero-resistance state is formed by one of the frequencies, such superposition relation breaks down and the bichromatic resistance is strongly suppressed.     

光敏电阻响应时间的研究实验

用半定量方法研究了光敏电阻的响应时间与照射光的照度和波长的关系,并给出了光敏电阻的上升时间和下降时间的测量方法.该实验可作为本科生的探索性实验,有助于培养学生的综合和研究能力.     

Microwave photoresistance of a double quantum well at high filling factors

The effect of millimeter wave radiation on the electronic transport in a GaAs double quantum well at a temperature of 4.2 K in a magnetic field of up to 2 T has been studied. Resistance (conductance) oscillations have been shown to appear in the two-dimensional electronic system under investigation at high filling factors. The magnetic field positions of the oscillation maxima are determined by the condition Δ_SAS/? = lω_c, where Δ_SAS = (E ₂ ? E ₁) is the size quantization sublevel splitting in the quantum well, ω_c is the cyclotron frequency, and l is a positive integer. It has been found that the microwave field substantially modifies the oscillations in the double quantum well, which results in alternating two-frequency oscillations of photoresistance with the inverse magnetic field.     

Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime

The terahertz resistive response of a two-dimensional topological insulator in a HgTe quantum well in the quasiballistic transport regime is studied. The photoresistance appearing only near the charge neutrality point is detected. The application of the magnetic field up to 4 T in the plane of the quantum well results in an increase in the photoresistance in the peak and in the expansion of the region near the charge neutrality point where it exists. The reported results imply that the observed photoresistance is due to transitions involving edge dispersion branches of the two-dimensional topological insulator.     

Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

JETP Letters - The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at...     

光敏电阻基本特性测量实验的设计

介绍了测量CdS光敏电阻的伏安特性和光照特性的实验方法，并给出了相应的实验结果。     

Photolysis of light-transforming polymeric materials based on europium(III) nitrate with 1,10-phenanthroline and quinaldic acid

Light-transforming polymeric materials based on two luminophor dopants (europium(III) nitrate with 1,10-phenanthroline and quinaldic acid characterized by intense luminescence in the spectral range of 400–650 nm) have been fabricated. It has been established that the photoresistance of polymeric materials based on the fabricated composites is higher than that of the polymeric material activated with europium(III) nitrate with 1,10-phenanthroline. It has been also established that luminescence and photochemical characteristics of polymeric composites are determined by the dopant molar ratio: the maximum luminescence intensity and photoresistance characterize the polymeric material containing europium(III) nitrate with 1,10-phenathroline and quinaldic acid at a molar ratio of 1: 2.     

Origin7．5软件在大学物理综合设计性实验教学中的应用探讨

本文采用origin7．5软件对大学物理综合设计性实验数据的处理进行了探讨。实验结果揭示出了热敏电阻温度特性、光敏电阻伏安特性和光照特性。     

用白炽灯作光源测量普朗克常量--第36届国际奥林匹克物理竞赛实验题分析

介绍了第36届国际奥林匹克物理竞赛“用白炽灯测量普朗克常量”实验,该题利用白炽灯作为辐射源并配合波长滤波器、减光板以及光敏电阻等装置,测量普朗克常量.文章对该实验进行了分析并给出解答.     

Microwave photoresistance in a two-dimensional electron system with anisotropic mobility

The effect of microwave radiation on magnetotransport in single GaAs quantum wells with anisotropic mobility, whose maximum corresponds to the $[1\bar 10]$ direction and minimum to the [110] direction, is investigated using the Van der Pauw method. In samples shaped as squares with sides oriented along the $[1\bar 10]$ and [110] directions, giant oscillations of magnetoresistance arise under the effect of a microwave field for the both $[1\bar 10]$ and [110] orientations of the measuring current I _ac. In the anisotropic two-dimensional system under study, the relative amplitude of microwave photoresistance oscillations in a magnetic field weakly depends on the orientation of I _ac. At a temperature of 4.2 K and a microwave frequency of 130 GHz, magnetic field intervals characterized by close-to-zero resistance manifest themselves only for the case of the [110] orientation of I _ac. The aforementioned experimental results are qualitatively explained by a quasi-one-dimensional potential modulation of the two-dimensional electron gas in the [110] direction.     

用电桥研究光敏电阻的光电特性

利用平衡电桥和非平衡电桥可以研究光敏电阻的光电特性，该实验的原理涵盖电学、光学、半导体物理学等基础知识．通过实验学生可认识到光敏材料的光电特性，并学会一些基本仪器的组装和调试，掌握一种将非电量转化为电量进行动态测量的方法．     

Cyclotron resonance in a two-dimensional semimetal based on a HgTe quantum well

Microwave cyclotron resonance of electrons and holes at the metal-to-semimetal transition in HgTe quantum wells with an inversed band structure has been investigated. The resonance has been studied by measuring microwave photoresistance in the frequency range of 35–170 GHz. The effective cyclotron masses of electrons and holes have been determined. A shift of the cyclotron resonance of the two-dimensional electrons at the metal-to-semimetal transition possibly caused by plasma effects in the two-dimensional semimetal has been discovered.     

Effect of lanthanides on the spectral-luminescence properties and photoresistance of organic dyes in silicate sol-gel films

A sol-gel method is used to synthesize silicate films dyed in the sol stage with rhodamine C or methylene blue and further doped with cerium or lanthanum. It is shown that this sort of doping leads to a reduction in the peak intensity and a change in the shape of the S ₁←S ₀ band of the dyes, as well as to a shift in this band in a direction that depends on the H₂O: Si(OC₂H₅)₄ ratio. At the same time, the photoresistance of the rhodamine C molecules increases. The observed spectral changes are explained by the formation of supramolecules that include organic molecules, rare earth ions, and elements from the structural grid of the film, while the enhanced photoresistance is explained mainly by strengthening of the T ₁→S ₀ transitions in the dye. Fiz. Tverd. Tela (St. Petersburg) 41, 1979–1984 (November 1999)     

Microwave photoresistance of a two-dimensional electron gas in a ballistic microbar

The effect of millimeter microwave radiation on the electron transport of two-dimensional (2D) ballistic microbars formed on the basis of individual GaAs quantum wells at a temperature of T = 4.2 K in magnetic fields B < 0.6 T has been investigated. Differences have been revealed in the magnetic field dependences of the microwave photoresistance of a 2D electron gas in Hall bars with a length L and a width W for the cases L, W > l _p and L, W < l _p , where l _p is the electron mean free path for momentum. The microwave photoresistance in macroscopic bars (L, W > l _p ) is a periodic alternating function of the inverse magnetic field; in microbars (L, W < l _p ), it is a periodic positive function of 1/B. The experimental results indicate that the mechanisms of the microwave photoresistance of a 2D electron gas are different for macroscopic and microscopic bars.     

Resonances in ferromagnetic gratings detected by microwave photoconductivity

We investigate the impact of microwave excited spin excitations on the dc charge transport in a ferromagnetic (FM) grating. We observe both resonant and nonresonant microwave photoresistance, which are caused, respectively, by spin and charge dissipations of the microwave power into the FM. A macroscopic model based on Maxwell and Landau-Lifschitz equations reveals the mixing of spin and charge dissipations, which shows that the ferromagnetic anti-resonance is shifted when the conductivity is anisotropic. We find that the microwave photoconductivity provides a powerful new tool to study the interplay between photonic, spintronic, and charge effects in FM microstructures.     

Microwave photoresistance in a two-dimensional electron system with anisotropic mobility

The effect of microwave radiation on magnetotransport in single GaAs quantum wells with anisotropic mobility, whose maximum corresponds to the direction and minimum to the [110] direction, is investigated using the Van der Pauw method. In samples shaped as squares with sides oriented along the and [110] directions, giant oscillations of magnetoresistance arise under the effect of a microwave field for the both and [110] orientations of the measuring current I _ac. In the anisotropic two-dimensional system under study, the relative amplitude of microwave photoresistance oscillations in a magnetic field weakly depends on the orientation of I _ac. At a temperature of 4.2 K and a microwave frequency of 130 GHz, magnetic field intervals characterized by close-to-zero resistance manifest themselves only for the case of the [110] orientation of I _ac. The aforementioned experimental results are qualitatively explained by a quasi-one-dimensional potential modulation of the two-dimensional electron gas in the [110] direction. Original Russian Text ? A.A. Bykov, D.R. Islamov, A.V. Goran, A.K. Bakarov, 2007, published in Pis’ma v Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 86, No. 12, pp. 891–895.     

Resistance oscillations in two-dimensional electron systems induced by both ac and dc fields

We report on magnetotransport measurements in a high-mobility two-dimensional electron system subject simultaneously to ac (microwave) and dc (Hall) fields. We find that dc excitation affects microwave photoresistance in a nontrivial way. Photoresistance maxima (minima) evolve into minima (maxima) and back, reflecting strong coupling and interplay of ac- and dc-induced effects. Most of our observations can be explained in terms of indirect electron transitions using a new, combined resonant condition. Observed quenching of microwave-induced zero resistance by a dc field cannot be unambiguously linked to a domain model, at least before a systematic theory treating both excitation types within a single framework is developed.     

Microwave-induced magnetic field state with zero conductivity in GaAs/AlAs Corbino disks and hall bars

The microwave photoconductivity of the 2D electron gas in GaAs/AlAs heterostructures has been investigated at a temperature of 4.2 K in magnetic fields up to 1.5 T. It has been found that the magnetic field state with zero conductivity appears in GaAs/AlAs Corbino disks irradiated by 130.70-GHz microwave radiation. This state was previously observed only in GaAs/AlGaAs Corbino disks with much higher electron mobility and lower density. It has been shown that the microwave photoconductivity measured in high magnetic fields on Corbino disks can significantly differ from the value calculated from the results of the measurements on Hall bars. This difference is explained by the fact that the conditions of the appearing magnetoplasmons that affect the magnitude and character of the microwave photoconductivity (photoresistance) in the Corbino disks are nonequivalent to those in the Hall bars.     

葡萄糖注射液中不溶性微粒的识别算法研究

针对传统人工目测法以及光阻检测法在葡萄糖注射液中不溶性微粒识别判断效率较低现象,提出了一种背景差预处理与改进的Mean Shift算法相结合的微粒识别算法。利用高分辨率数码相机采集在一定照度下葡萄糖注射液中不溶性微粒产生散射光的序列数字图像。对序列数字图像进行预处理及并标定数字图像有效检测区域。建立序列数字图像背景模型并对背景噪声与随机噪声进行抑制处理。采用改进的Mean Shift算法对葡萄糖注射液中不溶性微粒进行目标跟踪。通过对序列数字图像中被检测对象的分割与特征提取,实现了葡萄糖注射液中粒径在25μm以上不溶性微粒的识别。