Optical properties of GaAs/Ga 1-xAlxAs ridge quantum wire: Third-harmonic generation

In this paper, the third-harmonic generation (THG) in GaAs/Ga_1 ? xAl_xAs ridge quantum wires is studied in detail. An analytic expression for the THG is obtained using a compact density matrix approach and an iterative procedure. Numerical calculations are performed for the typical GaAs/Ga_1 ? xAl_xAs ridge quantum wire. The results show that the maximum THG over 10^? 9_? m²_?/V²_? can be obtained. Another important point is that the structural parameters have great influence on the THG in this system.     

Ellipsometric detection of GaAs(0 0 1) surface hydrogenation in H2 atmosphere

Optical properties of MBE-grown GaAs(0 0 1) surfaces have been studied by spectroscopic ellipsometry under dynamic conditions of ramp heating and cooling after desorption of passivating As-cap-layer with low pressure H₂ atmosphere (14 Torr) applied to the surface. The temperature dependence of GaAs pseudo-dielectric function with atomically smooth (0 0 1) surface carrying the fixed Ga-rich (4 × 2) reconstruction was obtained for the temperature range of 160–600 °C. It is shown ellipsometrically that GaAs(0 0 1) heating in the molecular hydrogen atmosphere results in the formation of hydrogenated layer on the surface.     

Electrode reaction of Sr1−xLaxCo0.8Fe0.2O3−δ with x = 0.1 and 0.6 on Ce0.9Gd0.1O1.95 at 600 ≤ T ≤ 800 °C

The electrode reaction of the perovskite phases Sr_1−xLa_xCo_0.8Fe_0.2O_3−δ (x = 0.1 and 0.6) on Ce_0.9Gd_0.1O_1.95 has been investigated by impedance spectroscopy in the temperature range 600 ≤ T ≤ 800 °C. Thick porous electrodes (t ∼ 20 μm) were sprayed on Ce_0.9Gd_0.1O_1.95 and ac impedance spectra were recorded on symmetrical cells at the equilibrium. The analysis of the complex impedance diagrams clearly indicates the presence of two contributions. The low frequency one was assigned to the gas phase oxygen diffusion through the porous electrode and a finite length diffusion (Warburg) impedance was used to describe the high frequency (HF) data. The polarization resistance of the HF impedance contribution (R_w) is higher for x = 0.1 while the activation energy of R_w is higher for x = 0.6. The variations of R_w versus the La content, temperature and thickness indicate that the Warburg-type impedance contains information of both bulk oxygen diffusion and surface processes.     

Exciton relaxation in Ga1 − xInxAs/GaAs self-organized quantum dots

The exciton dynamics in Ga_1 − xIn_xAs/GaAs self-organized quantum dots grown on GaAs (111)B substrates are studied by the time-resolved photoluminescence (PL). We have found the intra-dot exciton relaxation by the reduction of the linewidth and peak energy and also by the energy-dependent PL rise time in the transient PL spectra. Compared with the energy relaxation in the reference quantum wells, we have confirmed that the exciton relaxation in three-dimensionally confined quantum dots is slower than in the quantum wells.     

Band overlap via chemical pressure control in double perovskite (Sr2−xCax)FeMoO6 (0 ⩽ x ⩽ 2.0) with TMR effect

The chemical pressure control in (Sr_2−xCa_x)FeMoO₆ (0 ⩽ x ⩽ 2.0) with double perovskite structure has been investigated systematically. We have performed first-principles total energy and electronic structure calculations for x = 0 and x = 2.0. The increasing Ca content in (Sr_2−xCa_x)FeMoO₆ samples increases the magnetic moment close to the theoretical value due to reduction of Fe/Mo anti-site disorder. An increasing Ca content results in increasing (Fe²⁺ + Mo⁶⁺)/(Fe³⁺ + Mo⁵⁺) band overlap rather than bandwidth changes. This is explained from simple ionic size arguments and is supported by X-ray absorption near edge structure (XANES) spectra and band structure calculations.     

Photoreflectance study of InAs quantum dots on GaAs(n 1 1) substrates

InAs self-assembling quantum dots (SAQDs) were grown on GaAs(n 1 1) substrates (n=2,3,4,5) by molecular beam epitaxy. Their structural and optical properties were studied by reflection high-energy electron diffraction, atomic force microscopy (AFM) and photoreflectance spectroscopy (PR). The PR spectra from 0.7 to 1.3 eV presented transitions associated to the SAQDs. The energy transitions were obtained by fitting the PR spectra employing the third derivative line-shape model. For n=2,4,5, two functions were required to fit the spectra. For n=3 only one function was required, in agreement with the more uniform SAQDs size distribution observed by AFM on GaAs(3 1 1)A. Franz–Keldysh oscillations (FKO) were observed in the PR spectra at energies higher than the GaAs band gap. From the FKO analysis we obtained the GaAs built-in internal electric field strength (F_int) at the InAs/GaAs(n 1 1) heterointerface. From F_int we made an estimation of the GaAs strain at the heterointerface.     

Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A

We have studied photoluminescence (PL) observed from single isoelectronic traps formed by nitrogen pairs in nitrogen δ-doped GaAs layers grown on GaAs(1 1 1)A substrates. The PL was composed of a single peak with a narrow linewidth of ∼80 μeV. Polarized PL measurements confirmed that the emission from single isoelectronic traps in nitrogen δ-doped GaAs(1 1 1) is unpolarized irrespective of nitrogen pair arrangements. These results can be explained by in-plane isotropy of the samples, which is consistent with the symmetrical property of GaAs(1 1 1), and demonstrate that utilizing (1 1 1) substrate is an effective means for obtaining unpolarized single photons, which are desirable for the application to quantum cryptography.     

Structure and electrochemical properties of Sm0.5Sr0.5Co1 − xFexO3 − δ cathodes for solid oxide fuel cells

Crystal structure, thermal expansion coefficient, electrical conductivity and cathodic polarization of compositions in the system Sm_0.5Sr_0.5Co_1 − xFe_xO_3 − δ with 0 ≤ x ≤ 0.9 were studied as function of Co / Fe ratio and temperature, in air. Two phases, including an Orthorhombic symmetry for 0 ≤ x ≤ 0.4 and a cubic symmetry for 0.5 ≤ x ≤ 0.9, were observed in samples of Sm_0.5Sr_0.5Co_1 − xFe_xO_3 − δ at room temperature. The adjustment of thermal expansion coefficient (TEC) to electrolyte, which is one of the main problems of SSC, could be achieved to lower TEC values with more Fe substitution. High electrical conductivity above 100 S/cm at 800 °C was obtained for all specimens, so they could be good conductors as cathodes of IT-SOFC. The polarization behavior of SSCF as a function of Fe content was evaluated by means of AC impedance using LSGM electrolyte. It was discovered that the Area Specific Resistance (ASR) of SSCF increased as the amount of substitution of Fe for Co increased. When the amount of Fe reached to 0.4, the highest ASR was obtained and then the resistance started decreasing above that. The electrode with a composition of Sm_0.5Sr_0.5Co_0.2Fe_0.8O_3 − δ showed high catalytic activity for oxygen reduction operating at temperature ranging from 700 to 800 °C.     

The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(1 1 1) substrates by MOCVD

In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(1 1 1) substrates by metal–organic chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown on Si(1 1 1) under various conditions and characterized by Nomarski microscopy (NM), atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), and room temperature (RT) photoluminescence (PL) measurements. Firstly, we optimized LT-AlN/HT-AlN/Si(1 1 1) templates and graded AlGaN intermediate layers thicknesses. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.2 μm. Secondly, the effect of in situ substrate nitridation and the insertion of an Si_xN_y intermediate layer on the GaN crystalline quality was investigated. Our measurements show that the nitridation position greatly influences the surface morphology and PL and XRD spectra of GaN grown atop the Si_xN_y layer. The X-ray diffraction and PL measurements results confirmed that the single-crystalline wurtzite GaN was successfully grown in samples A (without Si_xN_y layer) and B (with Si_xN_y layer on Si(1 1 1)). The resulting GaN film surfaces were flat, mirror-like, and crack-free. The full-width-at-half maximum (FWHM) of the X-ray rocking curve for (0 0 0 2) diffraction from the GaN epilayer of the sample B in ω-scan was 492 arcsec. The PL spectrum at room temperature showed that the GaN epilayer had a light emission at a wavelength of 365 nm with a FWHM of 6.6 nm (33.2 meV). In sample B, the insertion of a Si_xN_y intermediate layer significantly improved the optical and structural properties. In sample C (with Si_xN_y layer on Al_0.11Ga_0.89N interlayer). The in situ depositing of the, however, we did not obtain any improvements in the optical or structural properties.     

Electrochemical and magnetic properties of Li4 / 3Mn2 / 3O2–LiCoO2 solid solution

The compounds Li_(4−x)/3Mn_2(1−x)/3Co_xO₂ (0 < x < 0.5) were prepared by the sol–gel technique. X-ray diffraction patterns of these compounds were identified as α-NaFeO₂ type layered structure, though some super-structure lines, related to the ordered array of Li and transition metal ions in the transition metal layer, were observed. The magnetic susceptibility exhibited an antiferromagnetic transition around 40 K for x < 0.2, however the specimens with x > 0.3 had no magnetic transition. The magnetic percolation may explain these magnetic variations. The electrochemical performances were evaluated for the compound of x = 0.5, and it was seen that the electrochemical properties were sensitive to the potential window. Additionally, it was also found that the discharge capacity strongly depended on the preparation temperature; it took a maximum value at the preparation temperature of 900 °C. The discharge capacity is sensitive not only to the cation mixing degree but also to the particle size.     

Transition of magnetic anisotropy in Ni/GaAs (0 0 1) observed by magnetization and ferromagnetic resonance

Polycrystalline thin Ni films deposited onto GaAs (0 0 1) show a transition of the magnetic anisotropy depending on its thickness. The anisotropy is perpendicular to the film plane for the thicknesses of the film ⩽12 nm. This becomes in-plane in the films having thicknesses ⩾15 nm. The films are deposited onto the n-type GaAs (0 0 1) substrate by the usual thermal evaporation method and also by the electron beam evaporation in ultra high vacuum onto a GaAs epilayer in the standard molecular beam epitaxy system. The magnetization and ferromagnetic resonance (FMR) are observed in the temperature range from 4.2 to 300 K. For the discussion of the microscopic origin of the anomalous properties in magnetization and FMR experiments, the experimental results are reviewed by introducing a uniaxial anisotropy, which is calculated from the easy-axis and hard-axis magnetization data. This calculated anisotropy is able to explain the temperature and angle dependency of the FMR spectra of the Ni films. Hence the magnetization and FMR spectra are in agreement with the type of the anisotropy and its temperature dependency. In addition to these, the temperature dependence of the in-plane magnetic anisotropy is able to explain the previously reported anomalous effect of reducing the squareness at low temperatures in Ni/GaAs.     

Raman scattering from confined phonons in GaAs/AlGaAs quantum wires

We report on photoluminescence and Raman scattering performed at low temperature (T =  10 K) on GaAs/Al_0.3Ga_0.7As quantum-well wires with effective wire widths ofL =  100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. We find evidence for the existence of longitudinal optical phonon modes confined to the GaAs quantum wire. The observed frequency at ο_L10 =  285.6 cm⁻¹forL =  11.0 nm is in good agreement with that calculated on the basis of the dispersive dielectric continuum theory of Enderleinas applied to the GaAs/Al_0.3Ga_0.7As system. Our results indicate the high crystalline quality of the quantum-well wires fabricated using these techniques.     

Synthesis,characterization and magnetic properties of lightly doped La2−xSrxCuO4 (x = 0.04) nanoparticles

Lightly doped La_2−xSr_xCuO₄ (x = 0.04) nanoparticles with different particle sizes have been successfully prepared by a sol–gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), infrared transmission (IR) spectra and superconducting quantum interference device (SQUID) magnetometer. All samples are single phase and have an orthorhombic unit cell. As the particle size reduces, it is found that the IR band at around 685 cm⁻¹ corresponding to the in-plane Cu–O asymmetrical stretching mode shifts to higher frequency and the magnetization exhibits a large enhancement at low temperature. The magnetic susceptibility of all samples follows a modulated Curie law between ∼20 K and ∼100 K and the Curie constant displays a strong dependence on the particle size. It is suggested that as the particle size decreases surface effects should play an important role in the magnetic properties of the nanoparticles.     

Annealing effects on the crystal structure and physical properties of FeSe1−xTex (0.6 ≦ x ≦ 1) single crystals

Annealing effects of FeSe_1?xTe_x (0.6 ≦ x ≦ 1) single crystals have been investigated from measurements of the powder X-ray diffraction and specific heat. Through the annealing, several peaks of powder X-ray diffraction have become sharp and a clean jump of the specific-heat at the superconducting (SC) transition temperature, T_c, has been observed for x = 0.6–0.9, indicating bulk superconductivity. For annealed single-crystals of x = 0.6–0.8, the SC condensation energy, U₀, and the SC gap, Δ₀, at 0 K have been estimated as ～1.8 J/mol and 2.3–2.5 meV, respectively. The value of 2Δ₀/k_BT_c is 3.9–4.5, indicating a little strong-coupling superconductivity. Both the electronic specific-heat coefficient in the normal state, γ_n, and the residual electronic specific-heat coefficient in the SC state, γ₀, have been found to show significant x dependence. The values of γ_n are much larger than those estimated from the band calculation.     

Structure and conductivity investigations of alkaline earth substituted uranium oxide,U1 − xMxO2 ± δ (M = Mg,Ca, Sr) for solid oxide fuel cell applications

Alkaline earth substituted UO₂ (U_1 − xM_xO_2 ± δ; M = Mg, Ca, Sr; 0.1 ≤ x ≤ 0.525) with fluorite structure was synthesized in reducing atmosphere. Structure and conductivity properties of U_1 − xM_xO_2 ± δ fluorites were investigated for possible application in solid oxide fuel cells (SOFC). At room temperature and ambient atmosphere the materials are stable; however they decompose at an oxygen partial pressure p_O2 > 10^− 4 atm and temperatures higher than 600 °C. The total conductivity measured for the best conducting U_1 − xM_xO_2 ± δ material with M = Ca and x = 0.177 is as high as 3 S/cm at p_O2 < 10^− 4 atm at 600 °C. The relatively low ionic transference number (t_i∼0.02) is disadvantageous for potential use as electrolyte material for SOFC applications. The high conductivity and possible depolarization effects suggest potential use as anode materials in SOFC.     

Ionic and electronic conductivities,stability and thermal expansion of La10 − x(Si,Al)6O26 ± δ solid electrolytes

Apatite-type La_10 − xSi_6 − yAl_yO_{27 − 3x/2 − y/2} (x = 0–0.33; y = 0.5–1.5) exhibit predominant oxygen ionic conductivity in a wide range of oxygen partial pressures. The conductivity of silicates containing 26.50–26.75 oxygen atoms per formula unit is comparable to that of gadolinia-doped ceria at 770–870 K. The average thermal expansion coefficients are (8.7–10.8) × 10^− 6 K^− 1 at 373–1273 K. At temperatures above 1100 K, silicon oxide volatilization from the surface layers of apatite ceramics and a moderate degradation of the ionic transport with time are observed under reducing conditions, thus limiting the operation temperature of Si-containing solid electrolytes.     

Synthesis and characterization of layered Li1−x(Ni0.5Co0.5)1−yFeyO2(0 ≤ (1 − x) ≤ 1 and 0 ≤ y ≤ 0.2) cathodes

Layered Li(Ni_0.5Co_0.5)_1−yFe_yO₂ cathodes with 0 ≤ y ≤ 0.2 have been synthesized by firing the coprecipitated hydroxides of the transition metals and lithium hydroxide at 700 °C and characterized as cathode materials for lithium ion batteries to various cutoff charge voltages (up to 4.5 V). While the y = 0.05 sample shows an improvement in capacity, cyclability, and rate capability, those with y = 0.1 and 0.2 exhibit a decline in electrochemical performance compared to the y = 0 sample. Structural characterization of the chemically delithiated Li_1−x(Ni_0.5Co_0.5)_1−yFe_yO₂ samples indicates that the initial O3 structure is maintained down to a lithium content (1 − x) ≈ 0.3. For (1 − x) < 0.3, while a P3 type phase is formed for the y = 0 sample, an O1 type phase is formed for the y = 0.05, 0.1 and 0.2 samples. Monitoring the average oxidation state of the transition metal ions with lithium contents (1 − x) reveals that the system is chemically more stable down to a lower lithium content (1 − x) ≈ 0.3 compared to the Li_1−xCoO₂ system. The improved structural and chemical stabilities appear to lead to better cyclability to higher cutoff charge voltages compared to that found before with the LiCoO₂ system.     

Investigation of a graded channel InGaAs/GaAs heterostructure transistor

An InGaAS/GaAs heterostructure transistor utilizing a gradedIn_xGa_1 − xAs channel grown by low-pressure metal-olorganic chemical vapor deposition has been demonstrated. A negative differential resistance (NDR) phenomenon is observed. Electron mobilities are significantly improved by using the graded InGaAs channel. For the In composition varying fromx =  0.25 (at the buffer–channel interface) to x =  0.1 (at the spacer–channel interface) structure, a peak extrinsic transconductance of 24.6 S mm ^− 1(atV_DS =  6.5 V,V_GSstep =  − 0.5 mV) and a saturation current density as high as 555 mA mm ^− 1for a gate length of 1.5 μ m are obtained.     

Crystal growth and structural properties of the spinel-type Li1 + xMn2 − xO4 (x = 0.10, 0.14)

Single crystals of the lithium-rich lithium manganese oxide spinels Li_1 + xMn_2 − xO₄ with x = 0.10 and 0.14 have been successfully synthesized in high-temperature molten chlorides at 1023 K. The single-crystal X-ray diffraction study confirmed the cubic Fd3¯m space group and the lattice parameters of a = 8.2401(9) Å for x = 0.10 and a = 8.2273(10) Å for x = 0.14 at 300 K, respectively. The crystal structures have been refined to the conventional values R = 3.7% for x = 0.10 and R = 3.1% for x = 0.14, respectively. Low-temperature single-crystal X-ray diffraction experiments revealed that these single crystal samples showed no phase transition between 100 and 300 K. The electron-density distribution images in these compounds by the single-crystal MEM analysis clearly showed strong covalent bonding features between the Mn and O atoms due to the Mn–3d and O–2p interaction.     

Synthesis and characterization of La4Ni3−xCoxO10±δ (0.0 ≤ x ≤ 3.0, Δx = 0.2) for solid oxide fuel cell cathodes

The cobalt-doped lanthanum–nickel oxide system, La₄Ni_(3−x)Co_xO_10±δ (0.0 ≤ x ≤ 3.0, Δx = 0.2), was investigated as possible cathode materials for intermediate-temperature solid-oxide fuel cells. X-ray diffraction shows the presence of two structural phases in the series belonging to Bmab for 0.0 ≤ x ≤ 0.2, 0.8 ≤ x ≤ 2.0 and 2.6 ≤ x ≤ 3.0 and Fmmm for 0.4 ≤ x ≤ 0.6 and 2.2 ≤ x ≤ 2.4. All compositions are oxygen-deficient (δ < 0). Electrical conductivity measurements show a systematic decrease in the conductivity as cobalt content increases from x = 0.0 to 2.0, and reverses for x > 2.0. AC impedance measurements of the x = 0.4 composition in symmetrical cells with LSGM as an electrolyte show improved electrode performance over the parent nickelate La₄Ni₃O_9.78. Long-term thermal stability studies show the x = 0.4 composition to be more stable than the x = 3.0 phase after annealing at 1173 K in air for 1 week making this material a viable candidate for cathodes in solid oxide fuel cells.