Si(110)和Si(111)衬底上制备InGaN/GaN蓝光发光二极管

分别在Si(110)和Si(111)衬底上制备了In Ga N/Ga N多量子阱结构蓝光发光二极管(LED)器件.利用高分辨X射线衍射、原子力显微镜、室温拉曼光谱和变温光致发光谱对生长的LED结构进行了结构表征.结果表明,相对于Si(111)上生长LED样品,Si(110)上生长的LED结构晶体质量较好,样品中存在较小的张应力,具有较高的内量子效率.对制备的LED芯片进行光电特性分析测试表明,两种衬底上制备的LED芯片等效串联电阻相差不大,在大电流注入下内量子效率下降较小;但是,相比于Si(111)上制备LED芯片,Si(110)上LED芯片具有较小的开启电压和更优异的发光特性.对LED器件电致发光(EL)发光峰随驱动电流的变化研究发现,由于Si(110)衬底上LED结构中阱层和垒层存在较小的应力/应变而在器件中产生较弱的量子限制斯塔克效应,致使Si(110)上LED芯片EL发光峰随驱动电流的蓝移量更小.     

Theoretical studies of Sm/Si(1 1 1)–n × 1 (n = 5, 7) and Sm/Si(1 1 1)–(8 × 2) structures

In this study we employ a state-of-the-art pseudopotential method to perform local density of states (LDOS) calculations of n × 1 (n = 5, 7) and (8 × 2) reconstructions induced by the adsorption of rare-earth samarium (RE) in the submonolayer range. We conducted a full comparison between images from scanning tunneling microscopy (STM) and theoretical LDOS. Images taken of both filled and empty states show the effects induced by honeycomb chains and Seiwatz chains. We conclude that LDOS calculations are consistent with the assignment of features observed experimentally by STM.     

Coverage-dependent chemisorption of Cl on Si(1 1 4)

The dissociative chemisorption of Cl₂ on Si(1 1 4) was studied at room temperature using scanning tunneling microscopy. Filled and empty state imaging revealed a multitude of possible adsorption configurations with adsorption preferring rebonded atom and dimer sites over tetramer sites. The dissociation and subsequent adsorption processes were sufficiently exothermic that Cl could interrogate the potential energy landscape and find local energy minima. Annealing revealed configurations that preserved the strongest π-bonds of the (1 1 4) reconstruction.     

The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(1 1 1) substrates by MOCVD

In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(1 1 1) substrates by metal–organic chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown on Si(1 1 1) under various conditions and characterized by Nomarski microscopy (NM), atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), and room temperature (RT) photoluminescence (PL) measurements. Firstly, we optimized LT-AlN/HT-AlN/Si(1 1 1) templates and graded AlGaN intermediate layers thicknesses. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.2 μm. Secondly, the effect of in situ substrate nitridation and the insertion of an Si_xN_y intermediate layer on the GaN crystalline quality was investigated. Our measurements show that the nitridation position greatly influences the surface morphology and PL and XRD spectra of GaN grown atop the Si_xN_y layer. The X-ray diffraction and PL measurements results confirmed that the single-crystalline wurtzite GaN was successfully grown in samples A (without Si_xN_y layer) and B (with Si_xN_y layer on Si(1 1 1)). The resulting GaN film surfaces were flat, mirror-like, and crack-free. The full-width-at-half maximum (FWHM) of the X-ray rocking curve for (0 0 0 2) diffraction from the GaN epilayer of the sample B in ω-scan was 492 arcsec. The PL spectrum at room temperature showed that the GaN epilayer had a light emission at a wavelength of 365 nm with a FWHM of 6.6 nm (33.2 meV). In sample B, the insertion of a Si_xN_y intermediate layer significantly improved the optical and structural properties. In sample C (with Si_xN_y layer on Al_0.11Ga_0.89N interlayer). The in situ depositing of the, however, we did not obtain any improvements in the optical or structural properties.     

Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si(001) substrates

Semi-polar(1-101) In Ga N/Ga N light-emitting diodes were prepared on standard electronic-grade Si(100) substrates.Micro-stripes of Ga N and In Ga N/Ga N quantum wells on semi-polar facets were grown on intersecting {111} planes of microscale V-grooved Si in metal–organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared(1-101) Ga N, an In Ga N/Ga N LED was fabricated. Electroluminescence over 5 m A to 60 m A is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.     

The electron stimulated chemistry of methyl lactate on Cu(1 1 1)

The electron stimulated chemistry of monolayers of (R)/(S)-methyl lactate ((S)/(R)-MLAc) adsorbed on Cu(1 1 1) has been investigated. Monolayers of MLAc undergo highly efficient electron stimulated processes predominately desorption, but also a significant fraction is converted to an adsorbed alkoxide moiety through the selective cleavage of the O–H bond. The efficiency of the depletion of the adsorbed MLAc state and the absence of significant non-selective fragmentation contrasts with previous studies of the electron beam irradiation of monolayers of oxygen containing organic molecules.     

Energy surfaces of rare-earth silicide films on Si(1 1 1)

We report on angle-resolved photoelectron spectroscopy results of thin dysprosium-silicide layers formed on Si(1 1 1), taken with a toroidal analyzer allowing to image the energy surfaces in k_||-space. At monolayer dysprosium coverages, where hexagonal DySi₂ grows with a 1×1 superstructure, electron pockets are observed at the points with highly anisotropic effective masses, and around a hole pocket at the point also an anisotropic dispersion is found. The band filling of these two bands amounts to one, indicating an even number of electrons assigned to the surface unit cell. Similar features are found for multilayer coverages, where hexagonal Dy₃Si₅ layers are formed with a superstructure. Here, the influence of zone folding effects due to the reconstructed layers in the bulk silicide is only weak because of the high surface sensitivity of the experiments.     

GaN epilayers on nanopatterned GaN/Si(1 1 1) templates: Structural and optical characterization

Template-based nanoscale epitaxy has been explored to realize high-quality GaN on Si(1 1 1) substrates. We have employed polystyrene-based nanosphere lithography to form the nano-hole array patterns on GaN/Si(1 1 1) template and then, subsequent regrowth of GaN is carried out by metalorganic chemical vapor deposition (MOCVD). During the initial growth stage of GaN on such nanopatterned substrates, we have observed formation of nanoislands with hexagonal pyramid shape due to selective area epitaxy. With further epitaxial regrowth, these nanoislands coalesce and form continuous GaN film. The overgrown GaN on patterned and non-patterned regions is characterized by high-resolution X-ray diffraction (HRXRD) and high-spatial resolution optical spectroscopic methods. Micro-photoluminescence (PL), micro-Raman scattering and scanning electron microscopy (SEM) have been used to assess the microstructural and optical properties of GaN. Combined PL and Raman data analyses show improved optical quality when compared to GaN simultaneously grown on non-patterned bulk Si(1 1 1). Such thicker GaN templates would be useful to achieve III-nitride-based opto- and electronic devices integrated on Si substrates.     

Study of thermal oxidation of LaSix/Si(1 0 0) by grazing incidence electron-induced X-ray emission spectroscopy

A new X-ray emission spectroscopy (XES) apparatus for analyzing nondestructively the chemical states of the inner regions of layered materials was constructed. Using electron excitation at grazing incidence, it also enables the analyzing depth to be confined to the surfaces of the materials. The apparatus was employed to the study of oxidation of a La silicide layer formed on a Si substrate. By comparing the Si Kβ emissions with results by XPS analysis, it was concluded that the Si Kβ emission band of the oxidized sample at the excitation energy of 3.0 keV represents the Si 3p density of states (DOS) of a LaSiO mixed oxide. The variations of the spectra at increasing electron beam energies were compared with probing depths calculated by an empirical model. This result indicates that we can analyze the chemical states of a mixed oxide layer of one to two tens angstroms in thickness, and nondestructively probe into the depth of about several tens angstroms.     

Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

The electroluminescence (EL) and photoluminescence (PL) spectra of InGaN/GaN multiple quantum wells (MQWs) with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection current increases from 5 mA to 50 mA, the blueshift of the EL emission peak is 1 meV for the prestrained sample and 23 meV for a control sample with the conventional structure. Also, the internal quantum efficiency and the EL intensity at the injection current of 20 mA are increased by 71% and 65% respectively by inserting the prestrained InGaN interlayer. The reduced blueshift and the enhanced emission are attributed mainly to the reduced quantum-confined Stark effect (QCSE) in the prestrained sample. Such attributions are supported by the theoretical simulation results, which reveal the smaller piezoelectric field and the enhanced overlap of electron and hole wave functions in the prestrained sample. Therefore, the prestrained InGaN interlayer contributes to strain relaxation in the MQW layer and enhancement of light emission due to the reduction of QCSE.     

Topologically induced surface electron state on Si(1 1 1) surfaces

First-principle electronic structure calculation reveals the appearance of a new class of surface state on hydrogenated and clean Si(1 1 1) surfaces. The states are found to exhibit different characteristics to conventional surface electron states in terms of the peculiar distribution of the wavefunction depending on the wavenumber. In addition, the state results in flat dispersion bands in a part of the surface Brillouin zone having energy of about 8 eV below the top of the valence band. An analytic expression based on the tight-binding approximation corroborates the surface electron state results from the delicate balance of the electron transfer among the atoms situated near the surface. The obtained results give a possible extension and generalization of the edge state in graphite ribbons with zigzag edges.     

Chlorine adsorption on Si(1 1 1) studied by optical methods

The adsorption process of chlorine on Si(1 1 1) has been studied by means of real time surface differential reflectance (SDR) spectroscopy and second harmonic generation (SHG). The structure observed at 3.6 eV in SDR spectra is attributed to transitions including Si–Cl antibonding states. However, the overall feature is due to the removal of the electronic states of the clean surface. Developments of adsorption on Si adatom dangling bonds and breaking of adatom back bonds are obtained from SDR spectra and second harmonic (SH) intensity. They are well fit by the solutions of the rate equations under the assumption of adsorption of atoms without migration, and the initial sticking probability on the dangling bonds and the initial breaking probability of the back bonds are determined. Dependence of the adsorption kinetics on the carrier concentration is briefly reported.     

Adsorption of Ag on Si(1 0 0) surface

The chemisorption of one monolayer Ag atoms on an ideal Si(1 0 0) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The adsorption energies (E_ad) of different sites are calculated. It is found that the adsorbed Ag atoms are more favorable on C site (fourfold site) than on any other sites on Si(1 0 0) surface, the polar covalent bond is formed between Ag atom and surface Si atom, a Ag and Si mixed layer does not exist and does form an abrupt interface at the Ag–Si(1 0 0) interface. This is in agreement with the experiment results. The layer-projected density of states is calculated and compared with that of the clean surface. The charge transfer is also investigated. Comparing with the Au/Si(1 0 0) system, the interaction is weaker between Ag and Si than between Au and Si.     

Optical properties of laterally overgrown GaN pyramids grown on (1 1 1) silicon substrate

Optical properties of laterally overgrown GaN hexagonal pyramids on (1 1 1) Si substrates are studied by cathodoluminescence (CL) spectroscopy and mapping techniques. The results are compared with structural properties obtained by scanning and transmission electron microscopic techniques. To clarify the origin of the bandedge and yellow-band emissions from the GaN pyramids, wavelength-resolved CL properties of normal and cleaved GaN pyramids are investigated in the top and/or cross-sectional view configurations. The cross-sectional view CL images for cleaved GaN pyramid samples show significant differences between the overgrown areas on top of the mask and the coherently grown regions over the windows. A precise reverse (identical) contrast between bandedge (yellow-band) emission intensity and threading dislocation density is observed by comparing the cross-sectional view CL and transmission electron microscopic images. It is demonstrated that a strong correlation exists between structural defects and optical properties in laterally overgrown GaN hexagonal pyramids.     

硅衬底InGaN/GaN基蓝光发光二极管droop效应的研究

InGaN/GaN基阱垒结构LED当注入的电流密度较大时, LED的量子效率随注入电流密度增大而下降, 即droop效应.本文在Si (111)衬底上生长了 InGaN/GaN 基蓝光多量子阱结构的LED,通过将实验测量的光电性能曲线与利用ABC模型模拟的结果进行对比, 探讨了droop效应的成因.结果显示:温度下降会阻碍电流扩展和降低空穴浓度, 电子在阱中分布会越来越不平衡,阱中局部区域中因填充了势能越来越高的电子而溢出阱外, 从而使droop效应随着温度的降低在更小的电流密度下出现且更为严重, 不同温度下实验值与俄歇复合模型模拟的结果在高注入时趋势相反.这此结果表明,引起 droop效应的主因不是俄歇非辐射复合而是电子溢出,电子溢出的本质原因是载流子在阱中分布不均衡.