铁磁/反铁磁双层膜中的磁锻炼效应

采用Monte Carlo 方法,研究铁磁/反铁磁双层膜中的磁锻炼效应.结果表明,反铁磁层中冷场诱发的界面净磁化(钉扎效应)的磁弛豫可导致系统中的交换偏置场的磁锻炼效应.进一步研究表明,反铁磁层中掺杂可调控交换偏置场的磁锻炼效应,原因在于反铁磁层中掺杂能有效地改变冷场诱发的净磁化的磁弛豫过程.     

Rotation of the pinning direction in the exchange bias training effect in polycrystalline NiFe/FeMn bilayers

For polycrystalline NiFe/FeMn bilayers, we have observed and quantified the rotation of the pinning direction in the exchange bias training and recovery effects. During consecutive hysteresis loops, the rotation of the pinning direction strongly depends on the magnetization reversal mechanism of the ferromagnet layer. The interfacial uncompensated magnetic moment of antiferromagnetic grains may be irreversibly switched and rotated when the magnetization reversal process of the ferromagnet layer is accompanied by domain wall motion and domain rotation, respectively.     

Spin-transfer torques in antiferromagnetic metals from first principles

In spite of the absence of a macroscopic magnetic moment, an antiferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting antiferromagnet is polarized as well, leading to spin-transfer torques when the order parameter is textured, such as in antiferromagnetic noncollinear spin valves and domain walls. We report a first principles study on the electronic transport properties of antiferromagnetic systems. The current-induced spin torques acting on the magnetic moments are comparable with those in conventional ferromagnetic materials, leading to measurable angular resistances and current-induced magnetization dynamics. In contrast to ferromagnets, spin torques in antiferromagnets are very nonlocal. The torques acting far away from the center of an antiferromagnetic domain wall should facilitate current-induced domain wall motion.     

Co-Ni/FeMn双层膜中磁化强度对交换偏置的影响

固定CoNiFeMn双层膜中反铁磁层的厚度,改变CoNi铁磁层的成分来调节磁化强度,从而研究铁磁层的饱和磁化强度对CoNiFeMn双层膜中交换偏置的影响.研究表明,CoNiFeMn界面的交换耦合能U不是一个常量,而是随(MFM)12的增加而线性增加.其原因是铁磁层磁矩通过界面相互作用在反铁磁层中形成的局域交换磁场,在磁场冷却时影响反铁磁层的自旋结构或磁畴结构及双层膜中的交换偏置 关键词： 交换偏置 磁化强度     

Magnetization reversal of elliptic Co/Si/Co nanodisks in the field of a magnetic-force microscope probe

The processes of local magnetization reversal of elliptic Co/Si/Co nanodisks under the action of a nonuniform magnetic field of a magnetic-force microscope (MFM) probe have been investigated. The specific features of the distribution of the phase MFM contrast from particles with ferromagnetic and antiferromagnetic configurations of the magnetic moments in neighboring Co layers have been discussed. It has been shown experimentally that, under the action of the probe field, there occur orientational transitions of two types: transitions from the ferromagnetic configuration to the antiferromagnetic configuration due to the reorientation of the magnetization of the upper layer and transitions in the antiferromagnetic configuration with a change in the orientation of the magnetic moment in both ferromagnetic layers. The presented results of micromagnetic simulation of the processes of transformation of the magnetization in such particles under the action of the MFM probe field explain the main regularities of the magnetization reversal processes.     

Antivortex gyrotropic motion in a nanocontact

A vortex-antivortex pair can form in the free layer of a nanocontact device as a result of the Oersted field produced by the current. In a large-scale free layer having uniform magnetization boundary conditions an in-plane external magnetic field will tend to confine the vortex-antivortex pair, which undergoes gyrotropic motion about the nanocontact after an initial displacement from the static equilibrium position. With the vortex pinned to a defect at the nanocontact the antivortex dynamics can be isolated and gyrotropic precession of the antivortex will be the dominant mode. The frequency of antivortex precession increases as the external magnetic field increases, and the frequency decreases as the nanocontact current increases.     

Anisotropic pinned/biased magnetization in SrRuO3/SrMnO3 superlattices

The exchange coupling at the interfaces of magnetic superlattices consisting of ferromagnetic SrRuO3 and antiferromagnetic SrMnO3 grown on (001) oriented SrTiO3 is studied with in-plane and out-of-plane orientations of the cooling magnetic field, with respect to the substrate plane. The magnetization of the in-plane, field cooled hysteresis loop is lower than the corresponding in-plane zero-field-cooled hysteresis loop. The out-of-plane field cooled hysteresis loop is shifted, from the origin, along the graphical magnetization axis. We attribute this irreversible rotation of the moment to the pinning/biasing of spin in the SrRuO3 layer in the vicinity of interfaces by the antiferromagnetic SrMnO3 layer.     

Structure and magnetism of Fe/MgO/Fe multilayered nanosystems

The dependences of the structural and magnetic properties of a nanoscale Fe/MgO/Fe planar system on the thickness of the dielectric MgO layer are reported. X-ray crystallographic analysis reveals a high-quality layered structure with abrupt interlayer boundaries and a continuous MgO-insulator layer. Fourth-order magnetocrystalline anisotropy is found in the synthesized structures. A new way to provide antiferromagnetic ordering in the nanostructure is proposed by applying a magnetic field to the investigated structure at an angle of 22° with respect to the easy magnetization axis. In this case, the antiferromagnetic ordering of magnetic moments is established in the field range of 20–50 Oe.     

Motion of domain walls under the action of spin-polarized current in a magnetic junction

The effect of spin-polarized current on a domain structure in a magnetic junction consisting of two ferromagnetic metallic layers separated by an ultrathin nonmagnetic layer is studied within a phenomenological theory. The magnetization of one ferromagnetic layer (layer 1) is assumed to be fixed, while that of the other ferromagnetic layer (layer 2) can be freely oriented both parallel and antiparallel to the magnetization of layer 1. Layer 2 can be split into domains. Charge transfer from layer 1 to layer 2 is not attended with spin scattering by the interface but results in spin injection. Due to s-d exchange interaction, injected spins tend to orient the magnetization in the domains parallel to layer 1. This causes the domain walls to move and “favorable” domains to grow. The average magnetization current injected into layer 2 and its contribution to the s-d exchange energy are found by solving the continuity equation for carriers with spins pointing up and down. From the minimum condition for the total magnetic energy of the junction, the parameters of the periodic domain structure in layer 2 are determined as functions of current through the junction and magnetic field. It is shown that the spin-polarized current can magnetize layer 2 up to saturation even in the absence of an external magnetic field. The associated current densities are on the order of 10⁵ A/cm². In the presence of the field, its effect can be compensated by such a high current. Current-induced magnetization reversal in the layer is also possible.     

Magnetization transport and quantized spin conductance

We analyze transport of magnetization in insulating systems described by a spin Hamiltonian. The magnetization current through a quasi-one-dimensional magnetic wire of finite length suspended between two bulk magnets is determined by the spin conductance which remains finite in the ballistic limit due to contact resistance. For ferromagnetic systems, magnetization transport can be viewed as transmission of magnons, and the spin conductance depends on the temperature T. For antiferromagnetic isotropic spin-1/2 chains, the spin conductance is quantized in units of order (gmu(B))(2)/h at T=0. Magnetization currents produce an electric field and, hence, can be measured directly. For magnetization transport in electric fields, phenomena analogous to the Hall effect emerge.     

Magnetic proximity effects in antiferromagnet/ferromagnet bilayers: the impact on the Néel temperature

We present a study of the ordering temperature of an ultrathin antiferromagnetic film in the proximity of a ferromagnetic layer. The Néel temperature of a single-crystalline antiferromagnetic FexMn1-x film on Cu(001) in contact with a ferromagnetic Ni layer was monitored by the discontinuity in the coercivity as a function of temperature by magneto-optical Kerr effect measurements. It decreases by up to 60 K if the magnetization axis of the ferromagnet is switched from out of plane to in plane by deposition of a Co overlayer. These results give clear evidence for a magnetic proximity effect in which the ferromagnetic layer substantially influences the ordering temperature of the antiferromagnetic layer.     

Field-and Current-Driven Magnetization Reversal and Dynamic Properties of CoFeB-MgO-Based Perpendicular Magnetic Tunnel Junctions

We report a perpendicular magnetic tunnel junction(p MTJ) cell with a tunnel magnetoresistance(TMR) ratio of nearly 200% at room temperature based on Co Fe B/Ta/Co Fe B as the free layer(FL) and a synthetic antiferromagnetic(SAF) multilayer [Pt/Co]/Ru/[Pt/Co]/Ta/Co Fe B as the reference layer(RL). The field-driven magnetization switching measurements show that the p MTJs exhibit an anomalous TMR hysteresis loop. The spin-polarized layer Co Fe B of SAF-RL has a lower critical switching field than that of FL. The reason is related to the interlayer exchange coupling(IEC) through a moderately thick Ta spacer layer among SAF-RLs, which generates a moderate and negative bias magnetic field on Co Fe B of RL. However, the IEC among RLs has a negligible influence on the current-driven magnetization switching of FL and its magnetization dynamics.     

基于伊辛模型的Fe0.5Mn0.1Al0.4 合金磁化强度和磁熵变蒙特卡洛模拟

基于伊辛模型的单自旋反转蒙特卡洛算法,考虑了粒子间的最近邻以及次近邻相互作用,研究了无序 合金的磁化强度和磁熵变。首先,强调了粒子间的次近邻相关作用对体系的磁性和热力学性质的影响,明确了次近邻相互作用系数,证实了低温合金阻挫的存在;其次,研究了在相变温度处(不同磁场下)磁化强度随外加磁场（温度）的变化情况以及磁性粒子对磁化强度的贡献,发现反铁磁性粒子Mn在低温区对 合金的相变起了主要作用,而高温区体系的相变是由铁磁性粒子Fe贡献的;最后,分析了体系在相变温度处磁熵变数值随外加磁场的变化情况以及磁熵变在不同的外磁场下随温度的变化情况,当外加磁场h=0.14时,Mn粒子在冻结温度处的平均磁化强度为零,体系处于最无序的状态,对应的磁熵变 达到了正向最大值,极值的位置对应于体系的相变温度。     

Phenomenology of current-induced dynamics in antiferromagnets

We derive a phenomenological theory of current-induced staggered magnetization dynamics in antiferromagnets. The theory captures the reactive and dissipative current-induced torques and the conventional effects of magnetic fields and damping. A Walker ansatz describes the dc current-induced domain-wall motion when there is no dissipation. If magnetic damping and dissipative torques are included, the Walker ansatz remains robust when the domain wall moves slowly. As in ferromagnets, the domain-wall velocity is proportional to the ratio between the dissipative torque and the magnetization damping. In addition, a current-driven antiferromagnetic domain wall acquires a net magnetic moment.     

基于伊辛模型的Fe_(0.5)Mn_(0.1)Al_(0.4)合金磁化强度和磁熵变蒙特卡洛模拟

基于伊辛模型的单自旋反转蒙特卡洛算法,考虑了粒子间的最近邻以及次近邻相互作用,研究了无序Fe0.5Mn0.1Al0.4合金的磁化强度和磁熵变.首先,强调了粒子间的次近邻相关作用对体系的磁性和热力学性质的影响,明确了次近邻相互作用系数,证实了低温合金阻挫的存在;其次,研究了在相变温度处(不同磁场下)磁化强度随外加磁场(温度)的变化情况以及磁性粒子对磁化强度的贡献,发现反铁磁性粒子Mn在低温区对Fe0.5Mn0.1Al0.4合金的相变起了主要作用,而高温区体系的相变是由铁磁性粒子Fe贡献的;最后,分析了体系在相变温度处磁熵变数值随外加磁场的变化情况以及磁熵变在不同的外磁场下随温度的变化情况,当外加磁场H=0.14(a.u.)时,Mn粒子在冻结温度处的平均磁化强度为零,体系处于最无序的状态,对应的磁熵变ΔS(0.1,0.14)达到了正向最大值,极值的位置对应于体系的相变温度.     

自旋转移矩效应激发的非线性磁化动力学

本文基于宏观磁矩(macrospin)的Landau-Lifshitz-Gilbert方程,模拟研究了磁性自旋阀结构中由垂直膜面流向的自旋极化电流所激发的磁化转动动力学特性.直流自旋极化电流借助自旋转移矩效应可驱动磁矩翻转或作周期性振荡,交流电可以激发出具有混沌行为的磁矩振荡.展示了磁矩振荡行为随电流强度变化而发生倍周期分岔、直至混沌振荡的行为规律. 关键词： 自旋转移矩效应 微磁模拟 磁性自旋阀 混沌     

铁磁/反铁磁双层膜系统中的磁畴动力学行为

比较了铁磁单层膜与铁磁/反铁磁双层膜结构中的磁畴演化行为, 发现由于反铁磁层膜对铁磁层膜的耦合作用使得系统的磁畴壁厚度、 磁畴壁等效质量、磁畴壁移动速度等发生了改变, 系统的矫顽场增强, 并出现了交换偏置场. 文章具体研究了反铁磁层耦合作用下其磁畴壁厚度、 等效质量以及磁畴壁移动速度等与反铁磁层的净磁化、 磁各向异性、界面耦合强度以及温度等的关系; 并研究了其对铁磁/反铁磁双层膜中的交换偏置场、矫顽场的影响. 进而 从磁畴结构的形成及其演化上揭示了铁磁/反铁磁双 层膜中出现交换偏置以及矫顽场增加的物理机制.     

Magnetization and magnetic susceptibility of the Ising ferromagnetic/antiferromagnetic superlattice

A linear cluster mean-field approximation is used to study the magnetic properties of the Ising ferromagnetic/antiferromagnetic superlattice, which is composed of a spin-1/2 ferromagnetic monolayer and a spin-1 antiferromagnetic monolayer with a single-ion anisotropy alternatively. By using the transfer matrix method, we calculate the magnetization and the initial magnetic susceptibility as functions of temperature for different interlayer coupling, single-ion anisotropy. We summarize the changing behaviors of the spin structure in ferromagnetic and antiferromagnetic layers and the characteristics of the corresponding magnetic susceptibilities, give the transition temperature as a function of the interlayer exchange coupling for different single-ion anisotropy, and analyze the features of the magnetization and the magnetic susceptibility.     

Asymmetrically shaped hysteresis loop in exchange-biased FeNi/FeMn film

The magnetization reversal of the bilayer polycrystalline FeNi(50 Å)/FeMn(50 Å) film sputtered in a magnetic field has been studied by magnetic and magneto-optical techniques. The external magnetic fields were applied along the easy or hard magnetization axis of the ferromagnetic permalloy layer. The asymmetry of hysteresis loop has been found. Appreciable asymmetry and the exchange bias were observed only in the field applied along the easy axis. The specific features of magnetization reversal were explained within the phenomenological model that involves high-order exchange anisotropy and misalignment of the easy axes of the antiferromagnetic and ferromagnetic layers. It has been shown that the film can exist in one of three equilibrium magnetic states in the field applied along the easy axis. The transitions between these states occur as first-order phase transitions. The observed hysteresis loop asymmetry is related to the existence of the metastable state.     

GdFeCo磁光薄膜中RE-TM反铁磁耦合与激光感应超快磁化翻转动力学研究

使用飞秒时间分辨抽运-探测磁光克尔光谱技术,研究了激光加热GdFeCo磁光薄膜跨越铁磁补偿温度时稀土-过渡金属(RE-TM)反铁磁交换耦合行为和超快磁化翻转动力学. 实验观察到由于跨越铁磁补偿温度、净磁矩携带者交换而引起的磁化翻转反常克尔磁滞回线以及在同向外磁场下,反常回线上大于和小于矫顽力部分的饱和磁化强度不同,显示出GdFeCo中RE与TM之间的非完全刚性反铁磁耦合. 在含有Al导热底层的GdFeCo薄膜上观测到饱和磁场下激光感应磁化态翻转及再恢复的完整超快动力学过程. 与剩磁态的激光感应超快退磁化过 关键词： 补偿温度 磁化翻转 反铁磁耦合 GdFeCo