Optical and microwave analysis of mushroom-type waveguides for traveling wave electroabsorption modulators based on asymmetric intra-step-barrier coupled double strained quantum wells by full-vectorial method

The finite difference method is exploited for a full-vectorial analysis of mushroom-type waveguides for traveling wave electroabsorption modulators (TWEAM) based on asymmetric intra-step-barrier coupled double strained quantum wells (AICD-SQW). In this analysis, the discontinuities of the normal components of the electric field across abrupt dielectric interfaces which are known as the limitations of scalar and semivectorial approximation methods are considered. The optical field distributions in mushroom-type TWEAM based on AICD-SQW and conventional ridge-type TWEAM of the same active region for 1.55 μm operation are presented. The important parameters in the high-frequency TWEAM design such as optical effective index which defines optical velocity and transverse mode confinement factor are calculated. Then, the transmission line microwave properties (microwave index, microwave loss, and characteristic impedance) of TWEAMs are obtained. The modulation response of mushroom-type TWEAM is calculated using circuit model by considering interaction between microwave and optical fields in waveguide and compared with conventional ridge-type TWEAM. It is found that increasing the width of p-cladding layer with the same i-layer to reduce the resistance in p-i-n mushroom-type waveguide of TWEAM based on AICD-SQW can improve the microwave propagation loss and thus the high-speed electro-optical response.     

行波电吸收调制器中脊宽对频带宽度的影响

根据行波电吸收调制器（TW-EAM）的微波传输特性,提出了等效电路模型.制作了工作波长为850 nm的GaAs/GaAlAs材料的TW-EAM,并通过等效电路模型分析了特性阻抗Z0、微波传输常数γ和S21,得出脊宽对器件微波特性的影响.从理论上验证了较小脊宽可以降低微波和光波之间的速度失配、波导的传输损耗及传输线和终端及源端之间的阻抗失配.理论模拟得出：脊宽为2 μm时,器件提供的带宽为23.9 GHz.     

InP基矩形马赫-曾德高速电光调制器行波电极设计与测试

提出了一种由新型沟槽耦合器和90°弯曲波导构成的InGaAsP/InP基矩形马赫-曾德电光调制器,对该调制器的L型波导相移臂设计了T型类微带行波电极.首先利用电极的等效电路估算带宽上限,进而在考虑阻抗匹配、回波损耗以及带宽等性能的基础上,使用有限元方法对电极的传输、输入/输出以及过渡区的结构参量进行优化.仿真结果表明由于受到电极输入及过渡区的性能限制,设计的整体行波电极匹配阻抗大于42Ω,回波损耗小于-15dB,带宽可达65GHz.测试制备的Ti/Au行波电极,得到回波损耗为-12dB和带宽为20GHz的最优性能.     

220 GHz 折叠波导慢波结构

 优化设计了一种220 GHz的折叠波导慢波结构的尺寸,对其冷测特性如色散、耦合阻抗和衰减进行了分析。理论分析和软件仿真结果表明设计的折叠波导慢波结构在中心频率处具有较平缓的色散关系,较高的耦合阻抗和较低的电路衰减。互作用模拟表明,在电子注电压为20 kV,电流为10 mA时,27 mm（50个周期）的折叠波导慢波结构在220 GHz具有14.5 dB的增益,3 dB带宽为16.3 GHz（211.9～228.2 GHz）。     

超高速行波电吸收调制器的k值设计方法

介绍了一种用于超高速行波电吸收调制器(TW-EAM)设计的“k值带宽法”.该方法考虑了影响调制器带宽的阻抗失配、相速度失配、微波衰减等因素,说明一个优化设计的TW-EAM其带宽可达到140 GHz.     

Microwave and millimeter-wave losses in conventional optoelectronic devices

In this paper, microwave characteristics of conventional optoelectronic devices, with emphasis on devices with microstrip (MS) and coplanar waveguide (CPW) electrode structures, are obtained. This analysis is essential for any improvement in the structure of the conventional optoelectronic devices so as to obtain a high performance. Microwave loss is one of the important bandwidth limitation factors in microwave and millimeter-wave (mmW) optical devices. Different sources of loss including ohmic, dielectric and radiating loss in MS and CPW of conventional optical devices are analyzed and compared. The results show that the total microwave loss increases with frequency in conventional MS and CPW waveguides. Also, in traveling-wave optoelectronic devices, the bandwidth is limited in the optical part by effects such as the carrier transit time effect and in the microwave part by factors such as length of the devices in active and non-active sections. In addition, validation of the results in the paper is performed with published theoretical and/or measurement results.     

Optimization of multiple quantum well electroabsorption modulators

A novel and simple approach for optimization of a multiple quantum well electroabsorption waveguide modulator is presented. In our approach, all four of the modulator characteristic parameters (on-off ratio, insertion loss, bandwidth, and driving voltage) are included. Design examples for GaAs/AlGaAs multiple quantum well modulators are presented. The accuracy of our model is confirmed by comparison between calculated and published experimental data.     

High-Speed Coplanar Waveguide Based Submount for 40 Gbit/s Electroabsorption Modulator

A high-speed submount has been designed and fabricated for 40 Gb/s electroabsorption (EA) modulators. The submount contains a coplanar waveguide (CPW) for microwave signal feeding and a Ta₂N thin-film resistor for impedance matching. The CPW transmission line is designed to ensure low microwave loss and reflection, and Ti/Cu/Ni/Au metal is adopted for electrode fabrication to guarantee good contact with the Ta₂N thin-film. The typical reflection coefficient of fabricated submount is estimated to be lower than−21 dB up to 40 GHz. As a demonstration, a high-speed EA modulator was chip-level packaged using the high-speed submount, and the measured small-signal modulation bandwidth was over 40 GHz.     

An optical fiber cable video system

Abstract

A novel and simple approach for optimization of a multiple quantum well electroabsorption waveguide modulator is presented. In our approach, all four of the modulator characteristic parameters (on-off ratio, insertion loss, bandwidth, and driving voltage) are included. Design examples for GaAs/AlGaAs multiple quantum well modulators are presented. The accuracy of our model is confirmed by comparison between calculated and published experimental data.     

Operation of low driving voltage cascaded modulator over non-cascaded modulator for 4 dB extinction ratio at 100 giga bit per second (Gbps)

This paper describes improved results when comparing cascaded traveling wave electro absorption modulator (TWEAM) to non-cascaded TWEAM by simulation. Large signal modeling is used for both types of modulators to achieve 4 and 10 dB extinction ratios (ERs) with flat frequency response for applications in short distance as well as long distance optical fiber communication. To obtain 4 and 10 dB ERs with 110 GHz 3 dB bandwidth, a cascaded TWEAM requires 0.4 V peak to peak (V_P-P) and 1 V_P-P input driving voltages respectively. A non-cascaded TWEAM requires about two times the input driving voltage compared to the cascaded modulator to achieve the same values of ER and 3 dB bandwidth. Both modulators have been simulated with the same bias and also use the same circuit parameters except for the total active segment lengths (1 and 0.5 mm for cascaded and non-cascaded modulator respectively) and microstrip lengths to obtain the same ERs and 3 dB bandwidths.     

Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes

This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.     

具有调制功能的多模干涉型1×3分束器

提出了利用量子约束斯塔克(Stark)效应制作具有调制功能的多模干涉型1×3分束器的设计思想,并详细分析了这种光分束器的工作原理。根据理论计算结果,制作了具有调制功能的多模干涉型1×3分束器。分束器的脊型多模波导长度为275μm,宽度为10μm,波导层采用GaAs/AlGaAs多量子阱结构,厚度约为0.2μm;电极采用共面波导结构。首先用有限差分光束传播法模拟了器件的光波传播特性,然后进行了初步的实验验证。理论模拟和实验结果表明,波长为0.86μm的高斯光束对称入射到多模波导的中心,器件实现了3分束功能;施加3 V的直流偏压,器件的调制深度达90%以上、调制带宽为2 GHz,实现了电吸收调制功能。     

Study of the double rectangular waveguide grating slow-wave structure

A slow-wave structure (SWS) with two opposite gratings inside a rectangular waveguide is presented and analysed. As an all-metal slow-wave circuit, this structure is especially suited for use in millimetre-wave travelling wave tubes (TWTs) due to its advantages of large size, high manufacturing precision and good heat dissipation. The first part of this paper concerns the wave properties of this structure in vacuum. The influence of the geometrical dimensions on dispersion characteristics and coupling impedance is investigated. The theoretical results show that this structure has a very strong dispersion and the coupling impedance for the fundamental wave is several tens of ohms, but the coupling impedance for --1 space harmonic wave is much lower than that for the fundamental wave, so the risk of backward wave oscillation is reduced. Besides these, the CST microwave studio is also used to simulate the dispersion property of the SWS. The simulation results from CST and the theoretical results agree well with each other, which supports the theory. In the second part, a small-signal analysis of a double rectangular waveguide grating TWT is presented. The typical small-signal gain per period is about 0.45 dB, and the 3-dB small-signal gain bandwidth is only 4\%.     

应用HFSS和Designer对电光调制器的协同仿真

应用ANSYS公司的HFSS和Designer对一种内嵌共面波导电极结构的聚合物电光调制器进行了协同仿真,设计出了带宽为56 GHz的聚合物电光调制器.通过对光波有效折射率和微波有效折射率的优化,实现了速度匹配.同时利用协同仿真方法对电极进行了优化设计,实现了阻抗匹配并降低了微波损耗.结果表明应用协同仿真方法可以提高计...     

超宽带聚合物调制器的优化设计

设计了一种以聚合物作为材料的低损耗、宽带宽的Mach—Zehnder光波导调制器。分析了调制器的脊波导的模式特性,设计了脊波导的结构,并使用BPM软件模拟了脊形波导的光场分布;通过对光场分布的分析,优化了脊形波导的宽度Wg,脊高6,芯层高度H。同时对聚合物调制器的电极进行了优化,包括电极宽度W和电极间距D,使得调制器有较小的导体损耗以及较好的阻抗匹配。并结合了脊波导的结构参数和电极的优化参数,给出了优化结果,它能够使微波的有效折射率与光波的有效折射率达到匹配,从而使带宽达到177GHz,导体损耗为0．2569dB／cm·GHz1／2。     

W波段基片集成波导缝隙阵天线的研究

介绍了一种低成本高效率的W波段4×4基片集成波导(SIW)缝隙阵天线。天线阵为双层结构,上层为辐射层,采用宽边纵向偏移缝隙驻波阵,可以实现高的辐射功率,下层为馈电层,采用SIW串联缝隙馈电方式,减小了传统功分网络带来的传输损耗和实现难度。对天线阵进行了优化设计,采用标准低成本PCB工艺制作了天线阵实物样品并进行测试。测试结果与仿真结果吻合较好,天线阵在94 GHz时,最大增益为16.8 dB,反射系数-30.1 dB,-10 dB带宽为92.6~96 GHz,副瓣电平19.5 dB,天线阵口径效率为83%。     

The effect of conductor loss on half-wave voltage and modulation bandwidth of electro-optic modulators

In this paper, we theoretically deduce the expressions of half-wave voltage and 3-dB modulation bandwidth in which conductor loss is taken into account. The results suggest that it will affect the theoretical values of half-wave voltage and bandwidth as well as the optimized electrode's dimension whether considering the conductor loss or not. As an example, we present a Mach-Zehnder (MZ) type polymer waveguide amplitude modulator. The half-wave voltage increases by 1 V and the 3-dB bandwidth decreases by 30% when the conductor loss is taken into account. Besides, the effects of impedance mismatching and velocity mismatching between microwave and light wave on the half-wave voltage, and 3-dB bandwidth are discussed.     

Analysis of a Novel Ka-band Folded Waveguide Amplifier for Traveling-Wave Tubes

A novel Ka-band folded waveguide （FW） amplifier for traveling wave tubes （TWT） is investigated. The dispersion curve and interaction impedance are obtained and compared to the normal FW circuit by numerical simulation. The interaction impedance is higher than a normal circuit through the whole band. We also study the beamwave interaction in this novel circuit, and the nonlinear large-signal performance is analyzed by a 3-D particlein-cell code MAGIC3D. A much higher continuous-wave （CW） output power with a considerably shorter circuit compared to a normal circuit is predicted by our simulation. Moreover, the novel FW even has a broader 3-dB bandwidth. It therefore will be useful in designing a miniature but high-power and broadband millimeter-wave TWT.     

横向电感膜片微波矩形波导的传输特性

以微波传输线等效二端口网络模型等效电路理论近似分析了含有横向电感膜片矩形波导的结构。计算发现,矩形波导内置一对膜片时膜片的宽度会影响散射参数的相位和振幅,而膜片放置的位置对散射参数的幅值及带宽没有影响。根据微波无反射传输的条件,研究了微波矩形波导内置两组横向电感膜片结构的转移矩阵。采用Matlab编程计算,得到在插入衰减最小时两组膜片在波导中的最佳间距。等效电路理论计算结果与用CST软件仿真的结果相符。研究发现,在膜片间距取最佳值时,两种方法得到的相对带宽差值仅为0.59%。     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.