Nanomembrane transfer process for intricate photonic device applications

We demonstrate a process for the fabrication and transfer of silicon nanomembranes (Si-NMs) that have been released from their host substrates and redeposited on foreign flexible or flat substrates. The transfer process developed allows intricate photonic devices to be transferred via NMs to a variety of new substrate materials. This allows the transferred devices to benefit from the material properties of both substrate and NM. Our process is designed to transfer and stack large-area photonic devices without compromising their optical performance. The process has been used to transfer large-area unpatterned silicon NMs, in excess of 2.5 cm(2), and photonic devices with intricate device designs containing various fill factors. We have also demonstrated transferred photonic crystal devices that have maintained structural integrity and functionality.     

Neutron multiplicity: Local hadronic showers and extensive air showers

A detailed analysis of events with neutron multiplicity M = 3−30 on neutron monitors (NMs) in Barentsburg (Spitsbergen), Baksan (North Caucasus), and Apatity (Murmansk region) is performed on the data obtained using a unique new data collection system. It is now possible for the first time to register local showers in cosmic rays on NMs and to investigate their structure with a high precision. Multiplicity on NMs is simulated using the GEANT4 Monte Carlo toolkit. Local hadronic cascades in the atmosphere with transverse sizes of 1 to 6 m were observed for the first time using the NM data. NM multiplicity generated by EAS hadronic cascades is studied on the data set on coupling NMs with the CARPET EAS facility.     

Ultimate ground level enhancements of solar cosmic ray intensity

Possible values of ground level enhancements (GLEs) of the intensity of solar cosmic rays (SCRs) that can be recorded by neutron monitors (NMs) are estimated in two different ways for the ultimate spectra of solar protons. The first approach uses the statistical dependence between the maximum values of the integral proton flux >100 МeV and the GLE recorded by an NM. The second is to calculate the expected effect for the ultimate spectrum at a particular NM with known couple coefficients, atmospheric depth, and the threshold of the geomagnetic cutoff. Estimates using the first method vary from 9600 to 160000% for high-latitude NMs; estimates using the second method, from 1200 to 750000%. The obtained lower limits approximately correspond to GLE values observed earlier, and the upper limits are two orders of magnitude higher. Studies of the possible impact of solar proton events with spectra close to ultimate on the Earth’s atmosphere and biosphere should be continued.     

Time of arrival of the first relativistic solar protons to the Earth

The anticoincidence system of the spectrometer onboard the INTEGRAL spacecraft (ACS SPI) is sensitive to primary and secondary γ-rays with energies higher than 150 keV and effectively responds to the arrival of solar protons and electrons. When the flux of primary γ-rays is small, ACS SPI registers the arrival of solar protons much earlier than the network of neutron monitors (NMs). For example, on December 13, 2006, ACS SPI registered the arrival of solar protons approximately 10 min earlier than the CR intensity started increasing on the Earth according to the NM data. However, when the flux of solar γ-rays is sufficiently high, ACS SPI observes the arrival of solar protons simultaneously with NMs (the event of January 20, 2005) or later (October 28, 2003). Found times of arrival of relativistic solar protons to the Earth do not contradict proton acceleration during γ-ray flares.     

Gold and Silver Nanomaterial‐Based Optical Sensing Systems

Gold and silver nanomaterials (NMs) such as nanoparticles (NPs) and nanoclusters (NCs) possessing interesting optical properties have become popular sensing materials. With strong surface plasmon resonance (SPR) absorption, extraordinary stability, ease in preparation, conjugation, and biocompatibility, Au NPs are employed to develop sensitive and selective sensing systems for a variety of analytes. However, small sizes of Au and Ag NCs with interesting photoluminescence (PL) properties are used in many PL‐based sensing systems for the detection of important analytes. In addition, many bimetallic AuM NMs possessing strong catalytic activity are used to develop highly sensitive fluorescent sensors. This review article is categorized in four sections based on the NMs used in the sensing systems, including Au NPs, bimetallic AuM NMs, Au NCs, and DNA–Ag NCs. In each section, synthetic strategies and optical properties of the NMs are provided briefly, followed by emphasis on their analytical applications in the detection of small molecules, metal ions, DNA, proteins, and cells. Current challenges and future prospects of these NMs‐based sensing systems will be addressed.     

多层结构双自旋过滤隧道结中的电子输运特性

在转移矩阵方法及Mireles和Kirczenow的量子相干输运理论的基础上,研究了正常金属层/磁性半导体层/非磁绝缘层/磁性半导体层/正常金属层型双自旋过滤隧道结中Rashba自旋轨道耦合效应和自旋过滤效应对自旋相关输运的影响.讨论了隧穿磁电阻（TMR）、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系.研究表明：含磁性半导体层的双自旋过滤隧道结由于磁性半导体层的自旋过滤效应和Rashba自旋轨道耦合作用可获得极大的TMR值.另外TMR和隧穿电导随着Rashba自旋轨道耦合强度的变化而振荡,振荡周期随Rashba自旋轨道耦合强度的增大逐渐减小. 关键词： 双自旋过滤隧道结 Rashba自旋轨道耦合 隧穿磁电阻 隧穿电导     

Spin-dependent proximity effects in ferromagnetic semiconductor/superconductor structures

Proximity effects in normal metal/insulator/ferromagnetic semiconductor/superconductor (NM/I/FS/SC) and NM/I/SC/FS junctions are studied based on an extended Blonder-Tinkham-Klapwijk (BTK) theory. It is found that the magnitude of the proximity effects depends to a great extent on the mismatches of the effective mass and band between the FS and SC. For NM/I/FS/SC junction, the transition of the tunneling conductance from “0” to “π” state is determined by the mass, magnetic exchange energy in FS and the thickness of FS. For NM/I/SC/FS junctions, the conductance spectrum is spin-dependent, indicating a local coexistence of weak ferromagnetism and s-wave superconductivity.     

Tunneling magnetoresistance of the double spin-filter junctions at nonzero bias

A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device.     

NM/FI/NI/FI/NM新型双自旋过滤隧道结的隧穿电导和隧穿磁电阻

在NM/FI/FI/NM型双自旋过滤隧道结(此处NM为非磁金属层，FI为铁磁绝缘体或半导体层)的基础上，我们提出一种NM/FI/NI/FI/NM新型双自旋过滤隧道结(此处NI表示非磁绝缘体或半导体层). 插入NI层的目的是为了避免原双自旋过滤隧道结中相邻FI层界面处磁的耦合作用所导致的对隧穿磁电阻的不利影响. 在自由电子近似的基础上，利用转移矩阵方法，对NM/FI/NI/FI/NM新型双自旋过滤隧道结的隧穿电导、隧穿磁电阻与FI层及NI层厚度的变化关系以及随偏压的变化关系进行了理论研究.计算结果表明，在NM/FI/NI/FI/NM新型双自旋过滤隧道结中仍可以得到很大的TMR值. 关键词： 双自旋过滤隧道结 隧穿磁电阻 非磁绝缘(半导)体间隔层     

Direct or indirect semiconductor: The role of stacking fault in h-BN

Electronic properties of hexagonal boron nitride (h-BN) with stacking fault have been systematically studied using the first-principles method. The formation energy of a single layer stacking fault in five typical stacking h-BN (AA, AB, AD, AE and AF) ranges from −58 to 55 meV, which indicates that the stacking fault can be easily introduced into the material. Amazingly, we find that as long as AA, AB, AD and AF stacking h-BN with AE-liked stacking fault they are similar to AE stacking with or without stacking fault behaving as quasi-direct or direct semiconductor. We predict that the AE-liked stacking sequence may be the primary reason for the inconsistency between theoretical and experimental reports according to the type of the band gap of h-BN.     

基于YVO4∶Eu纳米发光材料的足迹增强显现

足迹显现技术一直是刑事科学技术领域中的关键技术之一,也是足迹分析与足迹鉴定的重要前提。本研究在借鉴手印纳米荧光显现技术先进研究成果的基础上,提出了基于YVO₄∶Eu纳米发光材料的足迹增强显现技术,旨在改善提升足迹的显现效果。以稀土硝酸盐和原钒酸钠为原料、柠檬酸三钠为表面修饰剂,利用水热法合成出适于足迹显现的YVO₄∶Eu纳米发光材料。采用透射电子显微镜、X射线衍射谱、紫外可见吸收光谱、荧光光谱、傅里叶变换红外光谱对该纳米发光材料的微观形貌、晶体结构、吸收性质、发光性能、表面基团进行表征。所合成的YVO₄∶Eu纳米发光材料其微观形貌为类球形、平均粒径为39.2 nm,其晶体结构为四方晶系,紫外最强吸收波长为257 nm,在254 nm紫外光激发下能够发射614 nm红色可见光,表面为柠檬酸分子修饰。研究最终将YVO₄∶Eu纳米发光材料应用于赤足足迹和穿鞋足迹的增强显现技术,并详细探讨了两种类型足迹的粉末法显现原理。赤足足迹显现结果表明,足迹的形态轮廓分明,乳突纹线连贯,细节特征明显,屈肌褶纹、脱皮、附着物等特征反映明显;穿鞋足迹显现结果表明,足迹的鞋底花纹特征完整明显,以上显现痕迹特征均能够达到足迹检验鉴定的要求。另外,该研究分别探讨了纳米材料的发光性能、颗粒尺寸、微观形貌对于提高足迹显现对比度、灵敏度、选择性的具体作用。该研究提出的基于YVO₄∶Eu纳米发光材料的足迹增强显现技术具有对比度强、灵敏度高、选择性好等一系列显著优势,为稀土发光纳米材料的研究拓展了应用范围,也为足迹显现传统方法的发展提供了创新思路。     

Characterisation of nanomaterial hydrophobicity using engineered surfaces

Characterisation of engineered nanomaterials (NMs) is of outmost importance for the assessment of the potential risks arising from their extensive use. NMs display indeed a large variety of physico-chemical properties that drastically affect their interaction with biological systems. Among them, hydrophobicity is an important property that is nevertheless only slightly covered by the current physico-chemical characterisation techniques. In this work, we developed a method for the direct characterisation of NM hydrophobicity. The determination of the nanomaterial hydrophobic character is carried out by the direct measurement of the affinity of the NMs for different collectors. Each collector is an engineered surface designed in order to present specific surface charge and hydrophobicity degrees. Being thus characterised by a combination of surface energy components, the collectors enable the NM immobilisation with surface coverage in relation to their hydrophobicity. The experimental results are explained by using the extended DLVO theory, which takes into account the hydrophobic forces acting between NMs and collectors.

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Graphical abstract Determination of hydrophobicity character of nanomaterials by measuring their affinity to engineered surfaces.

     

Investigation of stacking faults in 4H-SiC using the electron-beam-induced current method

Stacking faults in 4H-SiC crystals introduced upon plastic deformation at 550°C are studied using the electron-beam-induced current (EBIC) method. The types of stacking faults are determined by measuring the cathodoluminescence spectra. The stacking faults are shown to give a bright contrast in the EBIC mode. The nature of such contrast is discussed. The possibility of increasing the efficiency of semiconductor detectors based on structures with stacking faults equivalent to thin 3C-SiC layers is demonstrated.     

The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions

Based on the free-electron approximation,we investigate the effect of the ferromagnetic metal layer on the tunnelling magnetoresistance(TMR) and tunnelling conductance(TC)in the double magnetic tunnel junctions(DMTJs) of the structure NM/FM/I(S)/NM/I(S)/FM/NM,where FM,NM and I(S) represent the ferromagnetic metal,nonmagetic metal and insulator(Semiconductor),respectively,The FM,I(S)and inner NM layers are of finite thickness,while the thickness of the outer NM layer is infinite.The calculated results show that,due to the spin-dependent interfacial potential barriers caused by electronic band mismatch between the various magnetic and nonmagnetic layers,the dependences of the TMR and TC on the thicknesses of the FM layers exhibit oscillations,and a much higher TMR can be obtained for suitable thicknesses of FM layers.     

Giant magnetoresistance effect in hybrid ferromagnetic-Schottky-metal and semiconductor nanosystem

We report on a theoretical investigation of the giant magnetoresistance (GMR) effect in hybrid ferromagnetic-Schottky-metal and semiconductor nanosystem. Experimentally, this GMR device can be realized by the deposition of two ferromagnetic (FM) stripes and one Schottky normal metal (NM) in parallel way on the top of a semiconductor GaAs heterostructure. The GMR effect emanates from the significant transmission difference for electrons tunneling through parallel and antiparallel magnetization configurations of the device, and its magnetoresistance ratio (MR) can reach the order of ¹⁰⁶%. Furthermore, it is also shown that the MR of the device depends strongly on the relative location of the Schottky NM stripe between two FM stripes.     

Tunable interlayer exchange coupling energy by modification of Schottky barrier potentials

We theoretically demonstrate that the interlayer exchange coupling (IEC) energy can be manipulated by means of an external bias voltage in a F₁/NM/F₂/S (F₁: ferromagnetic, NM: nonmagnetic metallic, F₂: ferromagnetic, S: semiconductor layers) four-layer system. It is well known that the IEC energy between two ferromagnetic layers separated by nanometer thick nonmagnetic layer depends on the spin-dependent electron reflectivities at the interface in F₁/NM/F₂ trilayer system. We apply such dependence to the F₁/NM/F₂/S four-layer system, where the reflectivity of NM/F₂ interface also depends on F₂/S interface due to the multiple reflection of an electron like optics. Finally, the IEC energy depends on the spin-dependent electron reflectivity not only at the interfaces of F₁/NM/F₂, but also at the interface of F₂/S. Naturally the Schottky barrier is formed at the interface between metallic ferromagnetic layer and semiconductor, the Schottky barrier height and thickness can be tailored by an external bias voltage, which causes the change of the spin-dependent reflectivity at F₂/S interface. We show that the IEC energy between two ferromagnetic layers can be controlled by an external bias voltage due to the electron-optics nature using a simple free-electron-like one-dimensional model.     

Electronic,dielectric and mechanical properties of MoS2/SiC hybrid bilayer: A first principle study

The electronic, mechanical and dielectric properties of lateral MoS₂/SiC heterobilayer are investigated using first principles calculations. Among various stacking conformations, the energetically favorable stackings namely AA₂ and AB′₁ have been considered in the present study. The band gap of the heterobilayer shows reduction as compared to constituent monolayers which also remains stacking dependent. The electronic band-gap is further tunable by applying mechanical strain and perpendicular electric field that rendered heterostructures from semiconductor to metal at critical value of applied strain/field. The stacking of heterobilayer strongly influence its mechanical properties e.g. ultimate tensile strength of considered two favorable stacking differ by more than 50%; the ultimate tensile strain of 17% and 21% respectively has been calculated for two different stackings. The static dielectric constant also shows tunability on heterostructuring the constituent monolayers as well as applying strain and field. These tunable properties of MoS₂/SiC may be useful for the device applications at nanoscale.     

Supramolecular self-assembly on the B-Si(111)-(√3x√3) R30° surface: From single molecules to multicomponent networks

Understanding the physical and chemical processes in which local interactions lead to ordered structures is of particular relevance to the realization of supramolecular architectures on surfaces. While spectacular patterns have been demonstrated on metal surfaces, there have been fewer studies of the spontaneous organization of supramolecular networks on semiconductor surfaces, where the formation of covalent bonds between organics and adatoms usually hamper the diffusion of molecules and their subsequent interactions with each other. However, the saturation of the dangling bonds at a semiconductor surface is known to make them inert and offers a unique way for the engineering of molecular patterns on these surfaces. This review describes the physicochemical properties of the passivated B-Si(111)-(√3x√3) R30° surface, that enable the self-assembly of molecules into a rich variety of extended and regular structures on silicon. Particular attention is given to computational methods based on multi-scale simulations that allow to rationalize the relative contribution of the dispersion forces involved in the self-assembled networks observed with scanning tunneling microscopy. A summary of state of the art studies, where a fine tuning of the molecular network topology has been achieved, sheds light on new frontiers for exploiting the construction of supramolecular structures on semiconductor surfaces.     

基于金属氧化物半导体场效应管的Marx发生器

给出了一种基于半导体开关的脉冲功率源的设计原理和方法。与标准的Marx发生器相比,用金属氧化物半导体场效应管(MOSFET)替代气体火花隙开关,用二极管替代电阻,由于可重复频率运行,所以能够有效地减少电路损耗。由于电路器件特性差异不同,在实验中采取对每一级的开关驱动信号进行单独调节,以补偿器件差异对同步性带来的影响。另外,实验对开关进行光纤隔离,而对强弱电的隔离采用DC-DC转换器,这不仅有利于保护实验设备,而且对Marx多级电路的同步性也有很大的贡献。设计的Marx发生器级数为16级,并给出了单次脉冲和重复频率两种情况下的实验结果。     

基于MOSFET的高重复频率高压脉冲源设计

设计了一种基于功率金属氧化物半导体场效应晶体管(MOSFET)的高压脉冲电源。该发生器采用多只MOSFET的串联技术,形成高压、高重复频率开关组件。用高压开关组件开展脉冲发生器设计,搭建了一个15只1 kV的高速MOSFET串联的脉冲发生器实验装置,在500 Ω负载上获得前沿小于5 ns、幅度大于10 kV、脉宽约100 ns,瞬态频率达400 kHz的高压脉冲。设计的高压开关组件结构紧凑,可靠性高,可应用于多种脉冲发生器。