Investigation on Heat Transfer and Pressure Drop of Copper–Water Nanofluid Flow in Plain and Perforated Channels

This article reports an experimental study on copper–water nanofluid flow inside plain and perforated channels. The effects of flow rate and nanoparticle concentration on the heat transfer and pressure drop are studied. It is found that the perforated channel has a remarkable heat transfer enhancement of 24.6%. Furthermore, by using the copper–water nanofluid instead of the base fluid, the heat transfer coefficient as well as pressure drop are increased for both plain and perforated channels. A noticeable thermal performance factor of 1.34 is obtained for the simultaneous utilization of both the heat transfer enhancement techniques considered in this article.     

Heat Transfer and Hydrodynamic Performance Analysis of a Miniature Tangential Heat Sink Using Al2O3–H2O and TiO2–H2O Nanofluids

In this article, thermal and hydrodynamic performances of a miniature tangential heat sink are investigated experimentally by using Al₂O₃–H₂O and TiO₂–H₂O nanofluids. The effects of flow rate and volume concentration on the thermal performance have been investigated for the Reynolds number range of 210 to 1,100. Experimental results show that the average convective heat transfer coefficient increases 14 and 11% and the bottom temperature of the heat sink decreases 2.2°C and 1.6°C by using Al₂O₃–H₂O and TiO₂–H₂O nanofluid instead of pure distilled water, respectively.     

Mössbauer Study of the Magnetic Transition in ϵ-Fe2O3 Nanoparticles Using Synchrotron and Radionuclide Sources

JETP Letters - Nuclear γ-resonance experiments with energy and time resolved detection are carried out with ϵ-F2O3 nanoparticles and a 57Co(Rh) laboratory Mössbauer source of γ...     

Effect of La Concentration on the Kinetics of the Induced Phase Transition in PbMg1/3Nb2/3O3–25PbTiO3 Transparent Ceramics

Physics of the Solid State - The effect of La concentration on the kinetic character of the induced phase transition in PbMg1/3Nb2/3O3–25PbTiO3 ferroceramics is studied. Below the...     

Microstructure Study on Heterostructures of AIInGaN/GaN/Al2O3 by Using Rutherford Backscattering/Channelling and XRD

A quaternary AlInGaN layer is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with a thick （〉 1μm） GaN intermediate layer. The compositions of In and A1 are determined by Rutherford backscattering （RBS）. The low ratio between the channelling yield and random yield according to the spectra of RBS/C （χmin = 1.44%） means that the crystal quality of the AllnGaN film is perfect. The perpendicular and the parallel elastic strain of the AIlnGaN layer, e^⊥=-0.15% and e^//= 0.16%, respectively, are derived using a combination of XRD and RBS/channelling.     

Study of Transport Phenomenon in Amorphous RexSi1 – x Thin Films on the Both Sides of the Metal–Insulator Transition at Very Low Temperatures

Physics of the Solid State - In this work, we study the electrical conductivity behaviors on the both sides of the metal-insulator transition (MIT) in RexSi1 – x amorphous...