位错偶极子和Ⅲ型界面裂纹的干涉效应

研究了多晶体材料中螺型位错偶极子和界面裂纹的弹性干涉作用.利用复变函数方法,得到了该问题复势函数的封闭形式解答.求出了由位错偶极子诱导的应力场和裂纹尖端应力强度应子,分析了偶极子的方向,偶臂和位置以及材料失配对应力强度因子的影响.推导了作用在螺型位错偶极子中心的像力和力偶矩,并讨论了界面裂纹几何条件和不同材料特征组合对位错偶极子平衡位置的影响规律.结果表明,裂纹尖端的螺型位错偶极子对应力强度因子会产生强烈的屏蔽或反屏蔽效应.同时,界面裂纹对螺型位错偶极子在材料中运动有很强的扰动作用.     

螺型位错偶极子与圆形界面刚性线的干涉效应研究

本文重点研究螺型住错偶极子和圆形夹杂界面刚性线的弹性干涉效应。利用复变函数方法,得到了该问题的一般解;此外还求出了只含一条界面刚性线时的封闭解答,得到了刚性线尖端的应力强度因子以及作用在螺型位错偶板子中心的像力和像力偶矩。研究结果表明：位错偶板子对应力强度因子具有很强的屏蔽或反屏蔽效应;软夹杂吸引位错偶极子,而刚性线排斥位错偶板子,在一定条件下,位错偶极子在刚性线附近出现一个平衡位置;当刚性线的长度争材料剪切模量比达到临界值时,可以改变偶极子和界面之间的干涉机理;刚性线长度对位错偶极子中心像力偶矩也有很大的影响。     

穿透夹杂界面的半无限楔形裂纹尖端螺型位错的发射研究

研究了穿透圆形夹杂界面的半无限楔形裂纹与裂纹尖端螺型位错的干涉问题.应用复变函数解析延拓技术与奇性主部分析方法,得到了位错位于半圆形夹杂内部时,半无限基体和半圆形夹杂内复势函数的解析解.然后利用保角映射技术得到了穿透圆形夹杂界面的半无限楔形裂纹尖端螺型位错产生的应力场以及作用在位错上的位错力的解析表达式.主要讨论了螺型位错对裂纹的屏蔽效应以及从楔形裂纹尖端发射位错的临界载荷条件.研究结果表明正的螺型位错可以削弱楔形裂纹尖端的应力强度因子,屏蔽裂纹的扩展,屏蔽效应随位错方位角的增大而减小.位错发射所需的无穷远临界应力随发射角的增加而增大,最可能的位错发射角度为零度,直线裂纹尖端位错的发射比楔形裂纹尖端位错的发射更容易,硬基体抑制位错的发射.     

压电螺位错与含界面裂纹圆形涂层夹杂的干涉

研究位于基体或夹杂中任意点的压电螺型位错与含界面裂纹圆形涂层夹杂的电弹耦合干 涉问题. 运用复变函数方法,获得了基体,涂层和夹杂中复势函数的一般解答. 典型例 子给出了界面含有一条裂纹时,复势函数的精确级数形式解. 基于已获得的复势函数和广 义Peach-Koehler公式,计算了作用在位错上的像力. 讨论了裂纹几何条件,涂层厚度和材 料特性对位错平衡位置的影响规律. 结果表明,界面裂纹对涂层夹杂附近的位错运动有很大 的影响效应,含界面裂纹涂层夹杂对位错的捕获能力强于完整粘结情况;并发现界面裂纹长 度和涂层材料常数达到某一个临界值时可以改变像力的方向. 解答的特殊情形包含了以 往文献的几个结果.     

纵向剪切下含共焦刚性核弹性椭圆夹杂中的螺型位错干涉

研究了无穷远纵向剪切下无限大基体中含共焦刚性核弹性椭圆夹杂内任意位置螺型位错的干涉问题.运用复变函数保角映射、解析延拓等方法,获得了基体与夹杂区域的应力场的级数形式精确解,并得出了位错像力的解析表达式,导出了纵向剪切下两椭圆界面最大应力及其比值公式.在此基础上,分析和讨论了夹杂内部刚性核对位错与夹杂之间干涉的扰动效应,以及椭圆夹杂尺度对位错像力的影响规律.     

螺型位错偶极子与界面钝裂纹的干涉效应

研究了螺型位错偶极子与界面钝裂纹的干涉效应.应用保角变换技术,得到了复势函数与应力场的封闭解析解,讨论了位错偶极子方位、臂长及裂纹钝化程度对位错偶板子屏蔽效应和发射条件的影响.结果表明,与单个螺型位错不同,螺型位错偶极子与x轴夹角在一定范围内时才可以降低界面钝裂纹尖端的应力强度因子(屏蔽效应),屏蔽效应随偶板子臂长的增大而增强,随裂纹钝化程度的增大而增强,屏蔽区域也随裂纹钝化程度的增大而增大;位错偶极子发射所需的临界无穷远加载随偶极子臂长的增加而减小,随位错方位角及裂纹钝化程度的增加而增大;最可能的位错偶极子发射角度为0.螺型位错偶极子的发射比单个螺型位错的发射要困难.本文解答的特殊情况与相关文献给出的解答一致.     

含非完整界面涂层夹杂中螺型位错的弹性分析

研究了含非完整界面圆形涂层夹杂内部一个螺型位错在夹杂、涂层与无限大基体材料中产生的弹性场.运用复变函数函数方法,获得了三个区域复势函数的解析解答.利用求得的应力场和Peach-Koehler公式,得到了作用在螺型位错上位错力的精确表达式.主要讨论了两个非完整界面对位错力的影响规律.结果表明,涂层界面对夹杂内部螺型位错的吸引力随着界面粘结强度的弱化而变大.界面非完整程度增加削弱材料弹性失配对位错力的影响.在一定条件下,非完整界面可以改变夹杂内位错与涂层/基体系统之间的引斥干涉规律,并使位错在夹杂内部产生一个稳定或非稳定的平衡点.     

压电双材料界面钝裂纹附近螺型位错的屏蔽效应与发射条件

研究了压电双材料界面钝裂纹附近螺型位错的屏蔽效应与发射条件.应用保角变换技术,得到了复势函数与应力场的封闭形式解,讨论了位错方位、双材料电弹常数及裂纹钝化程度对位错屏蔽效应和发射条件的影响.结果表明,Burgers矢量为正的螺型位错可以降低界面钝裂纹尖端的应力强度因子(屏蔽效应),屏蔽效应随位错方位角及位错与裂纹尖端距离的增大而减弱,压电双材料中螺型位错对裂纹的屏蔽效应强于相应弹性双材料中螺型位错对裂纹的屏蔽效应;位错发射所需的临界无穷远加载或电位移随位错方位角及裂纹钝化程度的增加而增大;最可能的位错发射角度为零度即位错最可能沿裂纹前方发射.论文解答的特殊情况与已有文献一致.     

含界面效应纳米尺度圆环形涂层中螺型位错分析

研究了纳米尺度圆环形涂层(界面层)中螺型位错与圆形夹杂以及无限大基体材料的干涉效应.涂层与夹杂的界面和涂层与基体的界面均考虑界面应力效应.运用复势方法,获得了三个区域复势函数的解析解答.利用求得的应力场和Peach-Koehler公式,得到了作用在螺型位错上位错力的精确表达式.主要讨论了界面应力对涂层(界面层)中螺型位错运动和平衡稳定的影响规律.结果表明,界面应力对界面附近位错的运动有大的影响,由于界面应力的存在,可以改变涂层内位错与夹杂/基体干涉的引斥规律,并使位错在涂层内部产生三个稳定或非稳定的平衡点.考虑界面效应后,有一个额外的排斥力或吸引力作用在位错上,使原有的位错力增加或减小.     

楔型向错偶极子与含界面裂纹圆形夹杂的弹性干涉

运用共形映照、解析延拓以及柯西型积分运算等复变函数方法研究无限大平面中楔型向错偶极子与界面裂纹、圆形夹杂的弹性干涉问题.求出含一条裂纹应力场的封闭形式解后,推导了裂纹尖端应力强度因子和作用在向错偶极子中心的向错力的表达式,研究了偶极子位置、方向、偶臂长度及材料性质对应力强度因子的影响,并分析了裂纹及夹杂对逐渐靠近的向错偶极子排斥或吸引作用的规律.     

INTERACTION OF A DISLOCATION DIPOLE WITH A MODE III INTERFACE CRACK

Interaction between a screw dislocation dipole and a mode III interface crack is investigated. By using the complex variable method, the closed form solutions for complex potentials are obtained when a screw dislocation dipole lies inside a medium. The stress fields and the stress intensity factors at the tip of the interface crack produced by the screw dislocation dipole are given. The influence of the orientation, the dipole arm and the location of the screw dislocation dipole as well as the material mismatch on the stress intensity factors is discussed. The image force and the image torque acting on the screw dislocation dipole center are also calculated. The mechanical equilibrium position of the screw dislocation dipole is examined for various material property combinations and crack geometries. The results indicate that the shielding or anti-shielding effect on the stress intensity factor increases abruptly when the dislocation dipole approaches the tip of the crack. Additionally, the disturbation of the interface crack on the motion of the dislocation dipole is also significant.     

INTERACTION OF A DISLOCATION DIPOLE WITH A MODE Ⅲ INTERFACE CRACK

Interaction between a screw dislocation dipole and a mode Ⅲ interface crack is investigated. By using the complex variable method, the closed form solutions for complex potentials are obtained when a screw dislocation dipole lies inside a medium. The stress fields and the stress intensity factors at the tip of the interface crack produced by the screw dislocation dipole are given. The influence of the orientation, the dipole arm and the location of the screw dislocation dipole as well as the material mismatch on the stress intensity factors is discussed. zThe image force and the image torque acting on the screw dislocation dipole center are also calculated. The mechanical equilibrium position of the screw dislocation dipole is examined for various material property combinations and crack geometries. The results indicate that the shielding or anti-shielding effect on the stress intensity factor increases abruptly when the dislocation dipole approaches the tip of the crack. Additionally, the disturbation of the interface crack on the motion of the dislocation dipole is also significant.     

A technique for studying interaction between a screw dislocation dipole or a concentrated load and a mode III crack crossing an interface

A method of potentially wide application is developed for deriving analytical expressions of the elastic interaction between a screw dislocation dipole or a concentrated force and a crack cutting perpendicularly across the interface of a bimaterial. The cross line composed of the interface and the crack is mapped into a line, and then the complex potentials are educed. The Muskhelishvili method is extended by creating a Plemelj function that matches the singularity of the real crack tips, and eliminates the pseudo tips’ singularity induced by the conformal mapping. The stress field is obtained after solving the Riemann–Hilbert boundary value problem. Based on the stress field expressions, crack tip stress intensity factors, dislocation dipole image forces and image torque are formulated. Numerical curves show that both the translation and rotation must be considered in the static equilibrium of the dipole system. The crack tip stress intensity factor induced by the dipole may rise or drop and the crack may attract or reject the dipole. These trends depend not only on the crack length, but also on the dipole location, the length and the angle of the dipole span. Generally, the horizontal image force exerted at the center of the dislocation dipole is much smaller than the vertical one. Whether the dipole subjected to clockwise torque or anticlockwise torque is determined by whether the Burgers vector of the crack-nearby dislocation of the dipole is positive or negative. A concentrated load induces no singularity to crack tip stress fields as the load is located at the crack line. However, as the concentrated force is not located on the crack line but approaches the crack tip, the nearby crack tip stress intensity factor K_IIIu increases steeply to infinity.     

Electroelastic interaction between a piezoelectric screw dislocation and a confocal elliptic blunt crack with elliptical inhomogeneity

The electroelastic interaction between a piezoelectric screw dislocation and an elliptical inhomogeneity containing a confocal blunt crack under infinite longitudinal shear and in-plane electric field is investigated. Using the sectionally holomorphic function theory, Cauchy singular integral, singularity analysis of complex functions and theory of Rieman boundary problem, the explicit series solution of stress field is obtained when the screw dislocation is located in inhomogeneity. The intervention law of the interaction between blunt crack and screw dislocation in inhomogeneity is discussed. The analytical expressions of generalized stress and strain field of inhomogeneity are calculated, while the image force, field intensity factors of blunt crack are also presented. Moreover, a new matrix expression of the energy release rate and generalized strain energy density (SED) are deduced. With the size variation of blunt crack, the results can be reduced to the case of the interaction between a piezoelectric screw dislocation and a line crack in inhomogeneity. Numerical analysis are then conducted to reveal the effects of the dislocation location, the size of inhomogeneity and blunt crack and the applied load on the image force, energy release rate and strain energy density. The influence of dislocation on energy release rate and strain energy density is also revealed.     

Shielding effect and emission condition of a screw dislocation near a blunt crack in elliptical inhomogeneity

The shielding effect and emission condition of a screw dislocation near a blunt crack in elastic elliptical inhomogeneity is dealt with. Utilizing the Muskhelishvili complex variable method, the explicit series form solutions of the complex potentials in the matrix and the inclusion regions are derived. The stress intensity factor and critical stress intensity factor for dislocation emission are also calculated. The influences of the orientation of the dislocation and morphology of the blunt crack as well as the material elastic dissimilarity upon the shielding effect and emission criterion are discussed in detail. As a result, numerical analysis and discussion show that the positive screw dislocation can reduce the stress intensity factor of the crack tip (shielding effect) only when it is located in the certain region. The shielding effect increases with the increase of the shear modulus of the matrix and the curvature radius of the blunt crack tip, but decreases with the increase of dislocation azimuth angle. The critical loads at infinity for dislocation emission increases with the increment of the emission angle and the curvature radius of the blunt crack tip, and the most probable angle for screw dislocation emission is zero. The present solutions contain previous results as the special cases.     

一维六方准晶中螺型位错偶极子与直线纳米裂纹的干涉效应

关于准晶中螺型位错偶极子与直线纳米裂纹干涉效应的问题，提出了一种可获得精确解的新方法。首先，将Gurtin-Murdoch表/界面理论推广运用到准晶材料中的纳米裂纹问题，建立了裂纹表面上含声子场、相位子场的应力边界模型；然后，利用复变函数中的共形映射方法，将直线裂纹问题化为单位圆孔问题；再借助于柯西积分方法获得了问题的封闭解；最后，数值结果表明：当裂纹的尺寸减小到纳米量级时，表面效应将对声子场和相位子场中的应力场、像力及像力偶矩产生显著的影响，从而改变其力学性能，即裂纹尺寸越小，表面效应越强，声子场和相位子场中的应力场、像力及像力偶矩的数值变化越大；螺型位错偶极子力偶臂的方向对像力的极值和自身平衡亦有较大影响。