Chirp reduction in three-cavity semiconductor laser diodes

The oscillation frequency shift ratio (OFSR) of a three-cavity coupled laser diode, which is caused by refractive index changes due to current modulation and temperature variation, has been investigated. It is found that the OFSR is significantly reduced by using a laser with an AR coated facet and a high external-mirror reflectivity, in addition to large external cavity lengths. Also, compared with an external cavity laser, the three-cavity laser has a smaller OFSR provided that the external cavities' reflectivities r₀ and r₃, are not identical (that is, r₃ > r₀). The analysis indicates that the structural parameters affect the OFSR of the three-cavity laser, which was shown to have a high longitudinal mode discrimination¹.     

Evolutionary optimization of non-periodic coupled-cavity semiconductor laser diodes

The analysis of different types of non-periodic multi-cavity laser structures will be presented. Deterministic non-periodic cavity concepts such as self-similar Cantor- or quasi-periodic Fibonacci sequences offer a distinct mode selectivity whilst having a significantly lower number of coupled cavities compared to an equivalent periodic solution. A heuristic numerical optimization procedure based on a breeder genetic algorithm scheme is favoured, also to give a sort of general information as to which kind of structures are well suited in terms of our requirements. By investigating the evolutionary optimized laser topologies according to the evolution of characteristic patterns, we propose a sort of superior meta-optimization strategy which relies on a population based information gathering.     

面发射分布反馈半导体激光器及光栅耦合半导体激光器

阐述了以曲线光栅面发射分布反馈半导体激光器（SEDFB）为代表的SE—DFB器件的原理和结构,讨论了它们的性能和特点并与其他类型的半导体激光器进行了比较。指出依靠曲线光栅特殊的衍射特性,可实现对模式的控制和二维漏模耦合阵列化出光,得到窄线宽（典型值0．08nm）、小发散角（典型值0．5mrad）、高亮度（单管近衍射极限3W（CW））和大功率（单管最高73w,列阵为kW级）的激光。综述了SE—DFB的发展历程、现状及未来的发展趋势,强调由于曲线光栅耦合SE—DFB激光器兼具边发射和面发射器件的优势和诸多其他优秀性能,将其应用于不同材料体系,不同结构的半导体激光器及其阵列,制作不同波段的高功率、高光束质量的SEDFB器件会有很好的研究意义和应用前景。     

Monochromatization of semiconductor laser diodes using one-dimensional photonic crystals

The results on the development of the single-frequency semiconductor laser with external cavity based on a fiber Bragg grating (one-dimensional photonic crystal) formed in a single-mode fiber waveguide are presented. Stable single-frequency lasing at a wavelength of 977 nm with a spectral half width of 0.2 nm is achieved with a laser power output of 350 mW. The temperature dependence of lasing parameters is studied.     

Self-detection of lasing characteristics for semiconductor ring laser diodes

A novel method of measurement of lasing characteristics for a ring laser diode is proposed without branching of the optical lasing power. The lasing power and the linewidth as a function of the injection current have been measured by detecting the RF power by the terminal voltage change of a ring LD. The linewidth is estimated to be 55 kHz atl=1.75l _th.     

Analysis of the spectral linewidth of three-cavity semiconductor laser diodes

The spectral linewidth for a semiconductor laser diode coupled to two external cavities (known as a three-cavity laser diode) is studied in the article. A closed-form expression for the linewidth of this laser is derived by analyzing the number of photons in the laser cavity. It is found that, because of the optical feedback provided by the external cavities, the photon lifetime becomes longer than that of a solitary Fabry-Perot (FP) laser, hence reducing the value of the spectral linewidth. Our theoretical investigations reveal that the linewidth of a three-cavity laser can be reduced further by using external mirrors with high reflectivities and using anti-refection (AR) coatings on the laser diode facets. We have also studied the effects of uncertainties in the linewidth enhancement factor a due to optical feedback and found that such uncertainties have negligible effects on the validity of our results.     

Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes

A broad-area semiconductor laser diode with two monolithically integrated optical elements is presented. A 275-nm period detuned second-order diffraction grating on the p-doped side layer is combined with a refractive lens transferred into the GaAs substrate so that outcoupling and beam-shaping functions are decoupled. The high-power device produces a circular spot and demonstrates the potential of dual optics integration in broad-area semiconductor diodes.     

Effect of stripe width on junction temperature of stripe-geometry semiconductor laser diodes

When a laser diode (LD) is operated at high current densities, the junction temperature can rise significantly above the heat sink temperature. Generally, rise in junction temperature is a direct consequence of inability of different layers in a laser diode to dissipate heat efficiently due to finite thermal resistance. Usually, thermal resistance increases with a reduction in stripe width. Hence, the issue of thermal management becomes very important in modern days narrow stripe-geometry lasers. In this paper, the effect of stripe width on the junction temperature of a stripe-geometry semiconductor LD is analyzed by originating different heat sources. This has been accomplished using a simple technique for the measurement of junction temperature of a LD.     

基于大功率激光二极管的光导开关导通特性

研究了应用于介质壁加速器的小间隙光导开关在大功率激光二极管驱动下的导通特性。激光二极管产生的激光脉冲中心波长为905 nm, 脉冲宽度（FWHM）约20 ns, 前沿约3.1 ns, 抖动小于200 ps, 峰值功率约90 W。所用光导开关为异面电极结构的砷化镓（GaAs）光导开关, 电极间隙5 mm, 偏置电压为15～22 kV脉冲高压, 工作在非线性（高增益）模式。测得光导开关最小导通电阻4.1 , 抖动小于1 ns, 偏置电压在18 kV时平均使用寿命约200次。     

基于大功率激光二极管的光导开关导通特性

研究了应用于介质壁加速器的小间隙光导开关在大功率激光二极管驱动下的导通特性。激光二极管产生的激光脉冲中心波长为905nm,脉冲宽度(FWHM)约20ns,前沿约3.1ns,抖动小于200ps,峰值功率约90W。所用光导开关为异面电极结构的砷化镓(GaAs)光导开关,电极间隙5mm,偏置电压为15~22kV脉冲高压,工作在非线性(高增益)模式。测得光导开关最小导通电阻4.1Ω,抖动小于1ns,偏置电压在18kV时平均使用寿命约200次。     

A model for peak-gain coefficient in InGaAsP/InP semiconductor laser diodes

A parabolic model of the formg =n ² +n + has been suggested for long-wavelength InGaAsP laser diode peak-grain coefficient variations with the carrier density. The parameters, and, which are dependent on doping, bandgap-wavelength and temperature, have been calculated by applying the least-mean-square method to fit the results of the Lasher and Stern theory of the recombination in semiconductors. p ]This model is superior to the commonly used linear model in accuracy and range of applicability.     

Transients in thin-base semiconductor diodes

Transients for thin-base diodes following a step in the forward bias or current are discussed. The recombination rate at an ohmic contact is taken as arbitrary. The results enable this recombination rate to be determined, given the bulk lifetime of the minority carriers in the base.I am indebted to V. A. Chaldyshev, A. P. Vyatkin, and A. A. Sirotkin for valuable advice and discussions.     

The Frenkel effect in semiconductor diodes

A possible explanation is postulated of the experimentally observed (under certain conditions) dependence of the reverse current of geranium and silicon diodes on the applied voltage. The explanation is based on a supposition that the probability of the generation of electrons and holes by recombination centers in the zone of the volume charge of a p-n junction (to which an inverse voltage is applied) is increased due to the thermal ionization being facilitated by the electric field.     

Electron microscopy of the early stages of growth of zinc chalcogenide films on semiconductor substrates

Electron microscopy has been used to examine the nucleation and growth of the transition layer for films of ZnS, ZnSe, and ZnTe on Ge and GaAs substrates. There are distinct temperature ranges in which physical condensation and chemical interaction occur. The film tends to recrystallize during growth.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 87–91, January, 1978.We are indebted to Yu. G. Saksonov for performing the electron-probe microanalyses of certain specimens.     

一种估计半导体激光器1/f噪声参数的新方法

对含白噪声的1/f分形信号小波变换系数的方差随尺度变化的关系进行适当的变换,提出了一种基于最小二乘法的估计半导体激光器1/f噪声参数的新方法.实验表明,该方法可以有效地提取出淹没在白噪声中的激光器1/f噪声,而且估计出的噪声信号的功率谱与对比仪器的测量结果有较好的一致性.     

Experimental investigation on coupling efficiency between semiconductor laser diodes and single-mode fibres by an etching technique

The coupling efficiency between semiconductor laser diodes (LDs) and single-mode fibres (SMFs) can be improved by matching their respective modes. This may be achieved by constructing a conical microlens on the end of an Al-coated vapour-axial deposition (VAD) SMF. A simple process to etch an SMF end selectively to produce such a conical microlens is described.A minimum coupling loss of 3 dB has been obtained using 1.3-m InGaAsP/InP buried heterostructure LDs. Experimental results on coupling efficiency and loss penalty due to lateral misalignment are also reported. This conical microlens is easy to manufacture and reproduce.     

半导体量子点在白光LED器件上的应用研究

以CdSe, CuInS₂和CdS:Mn量子点为例, 本文基于量子点白光LED器件的电光转换过程, 引入量子点的“类”光谱光效率函数, 给出了该器件的色坐标、光效和量子点配比等计算公式, 理论计算结果和实验结果基本一致. 研究结果表明量子点的荧光峰位和峰宽对白光器件的显色指数有显著影响.     

Scattering-parameter measurements of laser diodes

An accurate and simple technique for measuring the input reflection coefficient and the frequency response of semiconductor laser diode chips is proposed and demonstrated. All the packaging parasitics could be obtained accurately using a calibrated probe, and the impedance of the intrinsic diode chip is deduced from the directly measured reflection coefficient. The directly measured impedance of a laser diode is affected strongly by the short bond wire. In the frequency response (S ₂₁) measurements of semiconductor laser diode chips, the test fixture consists of a microwave probe, a submount, and a bond wire. The S-parameters of the probe could be determined using the short-open-match (SOM) method. Both the attenuation and the reflection of the test fixture have a strong influence on the directly measured frequency response, and in our proposed technique, the effect of test fixture is completely removed.     

Electron excess energy in vacuum diodes

The study is devoted to the nature of anomalous electrons in the spectrum of intense electron beams. The case of one-dimensional beam propagation between spherical electrodes in vacuum diodes with a large potential difference is considered. The results are compared to available experimental data.     

一种估计半导体激光器1/f噪声参数的新方法

对含白噪声的1/f分形信号小波变换系数的方差随尺度变化的关系进行适当的变换,提出了一种基于最小二乘法的估计半导体激光器1/f噪声参数的新方法.实验表明,该方法可以有效地提取出淹没在白噪声中的激光器1/f噪声,而且估计出的噪声信号的功率谱与对比仪器的测量结果有较好的一致性. 关键词： 半导体激光器 f噪声')" href="#">1/f噪声 参数估计 小波分析