The electron transport characters in a nanostructure with the periodic magnetic-electric barriers

This paper detailedly studies the transmission probability, the spin polarization and the conductance of the ballistic electron in a nanostrueture with the periodic magnetic-electric barriers These observable quantities are found to be strongly dependent not only on the magnetic configuration, the incident electron energy and the incident wave vector, but also on the number of the periodic magnetic-electric barriers The transmission coefficient and the spin polarization show a periodic pattern with the increase of the separation between two adjacent magnetic fields, and the resonance splitting increases as the number of periods increases. Surprisingly, it is found that a polarization can be achieved by spin-dependent resonant tunnelling in this structure, although the average magnetic field of the structure is zero.     

The effect of periodic magnetic-electric barriers on electron transport in a nanostructure

Using the transfer matrix method, the transmission probability, the spin polarization and the electron conductance of a ballistic electron are studied in detail in a nanostructure. We observe that these quantities sensitively depend on the number of periodic magnetic-electric barriers. As the number of periods increases, the resonance splitting increases, the number of the resonance peaks increases and the peaks become sharper as well as the spin polarization being enhanced. Surprisingly, a polarization of nearly 100% can be achieved by spin-dependent resonant tunneling in this structure, although the average magnetic field of the structure is zero.     

Bias-tunable electron transport in a magnetic double-barrier nanostructure

In this paper, the bias-dependent electron transport is investigated in detail in a magnetic double-barrier nanostructure in the presence of two bias voltages. It is shown that the large spin-polarization can be achieved in such a nanostructure, and the degree of the spin-polarization is strongly dependent on the applied bias. These interesting properties can provide an alternative scheme to spin-polarize electrons into semiconductors, and this device may be used as a bias-tunable spin filter.     

磁电垒结构中自旋极化输运性质的研究

研究了电子隧穿几类磁电垒结构的自旋极化输运性质，导出统一的传输概率公式，揭示了非 均匀磁场的分布与自旋过滤的关系，同时表明采用有效朗德因子较大的半导体材料可以显著 增强磁电垒结构的自旋过滤效果. 关键词： 磁电垒 自旋过滤 自旋电子学 自旋极化     

磁台阶势垒结构中二维电子气的自旋极化输运

运用散射矩阵方法,研究了台阶磁势垒量子结构中二维电子气的隧穿输运性质.结果表明：在零偏压下,电子传输概率的自旋极化曲线随入射能量的增加而振荡衰减;随着磁台阶数的增加,电子传输概率的自旋极化度最大值减小,同时电子传输概率的自旋极化度振荡衰减也越来越慢;随着磁台阶的总宽度增加,电子传输概率的自旋极化曲线出现更明显的振荡,电子隧穿磁台阶势垒表现出明显的量子尺寸效应;在偏置电压的作用下,电子传输概率的自旋极化度在宽广的入射能量区出现明显的振荡增大,电子隧穿磁台阶势垒表现出更明显的自旋过滤效应. 关键词： 磁台阶势垒 自旋极化 自旋过滤     

Bias-tunable electron transport properties in a nanostructure with two parallel-magnetic barriers

In this paper, the spin-dependent electron transport is studied in detail in a nanostructure under an applied bias and two parallel-magnetic barriers. We find that the large spin polarization can be achieved in such a device, and the degree of electron-spin polarization strongly depends on the applied bias. These interesting properties may provide an alternative scheme to spin-polarize electrons into semiconductors, and this device may be used as a bias-tunable spin filter.     

Wave-Vector and Temperature-Dependent Electron Transport in a Magnetic Nanostructure Modulated by Bias

We theoretically investigate the wave-vector and temperature-dependent electron transport in a magnetic nanostructure modulated by an applied bias. The large spin-polarization can be achieved in such a device, and the degree of spin-polarization strongly depends on the transverse wave-vector and the temperature. These interesting properties may be helpful to spin-polarizeelectrons into semiconductors, and this device may be used as a spin filter.     

The magnetoresistance effect in a nanostructure with the periodic magnetic barriers

The magnetoresistance (MR) effect is theoretically investigated in a periodic magnetically modulated nanostructure, which can be realized experimentally by depositing periodic parallel ferromagnetic strips on the top of a heterostructure. We find that there exists a significant conductance difference for electrons through the parallel (P) and antiparallel (AP) magnetization configurations, which results in a considerable magnetoresistance effect. We also find that the magnetoresistance effect depends not only on the temperature but also on the number of the periodic magnetic barriers.     

磁性金属纳米结构的畴壁特性与磁逻辑电路构筑

自旋电子学由于其丰富的物理内涵和广泛的应用前景受到学术界和工业界的高度重视,成为近年来凝聚态物理和信息技术领域关注的焦点。本文介绍了利用磁性金属纳米结构实现作为自旋电子器件基础的自旋注入的方法,特别涉及利用铁磁金属纳米点接触结构钉扎磁畴的特点,研究自旋极化电流与磁畴壁的相互作用规律, 理解纳米结构中畴壁的动力学行为,并以此为基础构筑结构简单、性能优异的全金属磁逻辑电路,从而实现了由电信号驱动,通过电信号检测,并与CMOS技术兼容的目的。     

Spin-dependent electron transport of a waveguide with Rashba spin--orbit coupling in an electromagnetic field

We investigate theoretically the spin-dependent electron transport in a straight waveguide with Rashba spin--orbit coupling (SOC) under the irradiation of a transversely polarized electromagnetic (EM) field. Spin-dependent electron conductance and spin polarization are calculated as functions of the emitting energy of electrons or the strength of the EM field by adopting the mode matching approach. It is shown that the spin polarization can be manipulated by external parameters when the strength of Rashba SOC is strong. Furthermore, a sharp step structure is found to exist in the total electron conductance. These results can be understood by the nontrivial Rashba subbands intermixing and the electron intersubband transition when a finite-range transversely polarized EM field irradiates a straight waveguide.     

Spin-dependent electron transport in a nonmagnetic nanostructure with both Dresselhaus and Rashba spin-orbit terms

The spin-dependent electron transport is numerically studied in a nonmagnetic nanostructure in the presence of both Dresselhaus and Rashba spin-orbit interactions. It is shown that the large spin polarization can be achieved in such a structure mainly due to the Rashba spin-orbit term induced splitting of the resonant level. It is also shown that the spin polarization strongly depends on the well width and the thickness of the middle barrier as well as the height of the middle barrier.     

HgMnTe磁性二维电子气自旋-轨道和交换相互作用研究

通过分析不同温度下HgMnTe磁性二维电子气Shubnikov-de Hass（SdH）振荡的拍频现象，研究了量子阱中电子自旋 轨道相互作用和spd交换相互作用.结果表明：（1）在零磁场下，电子的自旋 轨道相互作用导致电子发生零场自旋分裂；（2）在弱磁场下，电子的自旋-轨道相互作用占主导地位，并受Landau分裂和Zeeman分裂的影响，电子的自旋分裂随磁场增加而减小；（3）在高磁场下，电子的spd交换相互作用达到饱和，电子的自旋分裂主要表现为Zeeman分裂.实验证明了当电子的Zeeman分裂能量与零场 关键词： 磁性二维电子气 Zeeman分裂 Rashba自旋分裂     

Lateral shift in a spin-orbit-coupling modulated magnetic-barrier nanostructure

Spin-dependent Goos–Hänchen（GH）effect of the electron in a magnetic barrier nanostructure modulated by the spin-orbit coupling (SOC) is investigated. Two kinds of intrinsic SOCs (Rashba and Dresselhaus types) are taken into account, and spin-dependent lateral shifts are obtained by the transfer matrix method and the stationary phase approximation. The spin-dependent lateral shift is found to be related closely to the SOC. Both magnitude and sign of the spin-polarised lateral shift can be controlled by properly adjusting the strength of Rashba or Dresselhaus SOC. These interesting features can provide an alternative approach to manipulate spin-polarised electrons in the semiconductor, and such a nanostructure can serve as a controllable spatial spin splitter for spintronics applications.     

Spin-dependent transport for a two-dimensional electron gas with magnetic barriers

The spin-dependent conductance and magnetoresistance ratio (MRR) for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix method. It is shown that the splitting of the conductance for parallel and antiparallel magnetization configurations results in tremendous spin-dependent MRR, and the maximal MRRs reach 5300\% and 3800\% for the magnetic barrier spaces W=81.3 and 243.9~nm, respectively. The obtained spin-filtering transport property of nanostructures with magnetic barriers may be useful to magnetic-barrier-based spintronics.     

Electron transport in a two-dimensional electron gas modulated by one ferromagnetic stripe and two Schottky metal stripes

The electron transport in a two-dimensional electron gas modulated by ferromagnetic and Schottky metal stripes is theoretically studied. We find that the transmission and conductance as well as polarization are very sensitive to the position of the Schottky metal stripe, the electric-barrier height and the energy of the incident electron.     

Optical pumping nuclear magnetic resonance system rotating in a plane parallel to the quantization axis

A model of an optical pumping nuclear magnetic resonance system rotating in a plane parallel to the quantization axis is presented. Different coordinate frames for nuclear spin polarization vector are introduced, and theoretical calculation is conducted to analyze this model. We demonstrate that when the optical pumping nuclear magnetic resonance system rotates in a plane parallel to the quantization axis, it will maintain a steady state with respect to the quantization axis which is independent of rotational speed and direction.     

Current-induced spin polarization in a spin-polarized two-dimensional electron gas with spin-orbit coupling

The current-induced spin polarization (CISP) is investigated in a combined Rashba-Dresselhaus spin-orbit-coupled two-dimensional electron gas, subjected to a homogeneous out-of-plane magnetization. It is found that, in addition to the usual collision-related in-plane parts of CISP, there are two impurity-density-free contributions, arising from intrinsic and disorder-mediated mechanisms. The intrinsic parts of spin polarization are related to the Berry curvature, analogous with the anomalous and spin Hall effects. For short-range collision, the disorder-mediated spin polarizations completely cancel the intrinsic ones and the total in-plane components of CISP equal those for systems without magnetization. However, for remote disorders, this cancellation does not occur and the total in-plane components of CISP strongly depend on the spin-orbit interaction coefficients and magnetization for both pure Rashba and combined Rashba-Dresselhaus models.     

Electric-tunable magnetoresistance effect in a two-dimensional electron gas modulated by hybrid magnetic-electric barrier nanostructure

The electric-tunable spin-independent magnetoresistance effect has been theoretically investigated in ballistic regime within a two-dimensional electron gas modulated by magnetic-electric barrier nanostructure. By including the omitted stray field in previous investigations on analogous structures, it is demonstrated based on this improved approximation that the magnetoresistance ratio for the considered structure can be efficiently enhanced by a proper electric barrier up to the maximum value depending on the specific magnetic suppression. Besides, it is also shown the introduction of positive electrostatic modulation can effectively overcome the degradation of magnetoresistance ratio for asymmetric configuration and enhance the visibility of periodic pattern induced by the size effect, while for an opposite modulation the system magnetoresistance ratio concerned may change its sign.     

铁磁、肖特基金属和半导体纳米自旋过滤器中的量子尺寸效应

采用转移矩阵法,研究了结构尺度对自旋过滤器中电子自旋极化特性的影响．该自旋过滤器可以通过在半导体异质结上沉积纳米尺度的铁磁条带和肖特基金属条带来实现．计算结果表明,电子的自旋极化特性强烈依赖于铁磁条带和肖特基金属条带的结构尺度和位置,即该器件中存在量子尺寸效应．此外,我们的计算结果还表明,电子的自旋极化特性还与施加在肖特基金属条上的电压所诱发的电垒高度密切相关．因此,我们可以通过改变施加在肖特基金属条上的电压来调控该器件中电子的自旋极化特性,制造一个电压可调的电子自旋过滤器．     

Electronic Resonant Splitting in a Nanostructure with Periodic Magnetic-Electric Barriers

In this letter, the transmission probability and the conductance of the ballistic electron are studied in a nanostructure with the periodic magnetic-electric barriers. We find that the resonant splitting increases with the number of periods increasing, so the number of the resonant peaks increases and the peaks become sharper. For the m-th periodic magnetic-electric barriers tunneling the splitting is (m-1)-fold.