Uniformity study of wafer-scale InP-to-silicon hybrid integration

β-SiC nanowires were synthesized by a simple carbothermal reduction of carbonaceous silica xerogel. The morphology and structure of the nanowires were investigated by X-ray diffraction, scanning electron microscope and transmission electron microscopy. The results showed that the nanowires were hexagonal prism-shaped hierarchical nanostructures. The typical stacking faults and twin defects of SiC nanowires were also observed. Band-gap characterization and photoluminescence properties of SiC nanowires were investigated by UV-vis absorption spectroscopy and fluorescence photometry, respectively. The results showed the SiC nanowire was an indirect transition semiconductor and the band gap energy for the SiC nanowires was 2.85 eV. The photoluminescence peak value at 470 nm (2.64 eV) originating from the SiC nanowires was a little higher than the value of band-gap energy.     

Synthesis of single-crystalline wurtzite aluminum nitride nanowires by direct arc discharge

High-density hexagonal aluminum nitride (h-AlN) nanowires were synthesized through the direct reaction of Al with nitrogen gas without catalyst and template using a direct arc discharge method. The as-grown AlN nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The h-AlN nanowires have a diameter in the range 20–70 nm and a length of several tens of micrometers. Vapor–solid growth mechanisms can be employed to explain the formation of the h-AlN nanowires. PACS 81.05.Ea; 81.10.Bk; 81.16.Dn; 68.65.-k; 81.16.-c     

Polyol-thermal synthesis of silver nanowires for Hg<Superscript>2+</Superscript> sensing detection

This study demonstrates a facile but effective polyol-thermal reaction method for the synthesis of silver nanowires in autoclaves (160–180 °C). By this approach, the generated silver nanowires show an average diameter of ~40 nm and length up to tens of micrometers with a high yield and potential for large-scale production. To achieve shape- and size-controlled Ag nanowires, several experimental parameters were investigated and optimized, including surface controller(s), molar ratio of surfactant(s) to silver ions, temperature, and concentration of reactants. The structure and composition of silver nanowires were characterized by transmission electron microscopy (TEM), high-resolution TEM (HRTEM), scanning electron microscopy (SEM), and X-ray diffraction (XRD) techniques. In particular, the twinned crystal structure observed in both spherical particles and nanowires was analyzed by HRTEM technique, and the possible formation and growth mechanisms were discussed. The optical property of the as-prepared product was measured by ultraviolet–visible (UV–vis) spectroscopy. The sensing detection of metal ions (e.g., Hg²⁺) using the obtained silver nanowires in aqueous media was finally investigated.     

Large-scale synthesis of In2O3 nanowires

In₂O₃ nanowires have been successfully fabricated on a large scale from indium particles by thermal evaporation at 1030 °C. The as-synthesized products were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). SEM and TEM images show that these nanowires are uniform with diameters of about 60–120 nm and lengths of about 15–25 μm. XRD and selected-area electron diffraction analysis together indicate that these In₂O₃ nanowires crystallize in a cubic structure of the bixbyite Mn₂O₃ (I) type (also called the C-type rare-earth oxide structure). The growth mechanism of these nanowires is also discussed. Received: 29 June 2001 / Accepted: 28 September 2001 / Published online: 20 December 2001     

Field-emission enhancement of molybdenum oxide nanowires with nanoprotrusions

The field-emission properties of molybdenum oxide nanowires grown on a silicon substrate and its emission performance in various vacuum gaps are reported in this article. A new kind of molybdenum oxides named nanowires with nanoscale protrusions on their surfaces were grown by thermal vapor deposition with a length of ~1 μm and an average diameter of ~50 nm. The morphology, structure, composition and chemical states of the prepared nanostructures were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). According to XRD, XPS, and TEM analyses, the synthesized samples were composed of MoO₂ nanowires formed over a thin layer of crystalline Mo₄O₁₁. TEM observation revealed that these nanowires have some nanoscale protrusion on their surface. These nanoprotrusions resulted in enhancement of field-emission properties of nanowires comprising nanoprotrusions. The turn-on emission field and the enhancement factor of this type of nanostructures were measured 0.2 V/μm and 42991 at the vacuum gap of 300 μm, respectively. These excellent emission properties are attributed to the special structure of the nanowires that have potential for utilizing in vacuum nanoelectronic and microelectronic applications.     

Synthesis, morphologies and Raman-scattering spectra of crystalline stannic oxide nanowires

SnO₂ nanowires were synthesized using a direct gas reaction route and were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), selected-area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM) and Raman-scattering spectroscopy. XRD, SEM, SAED and HRTEM indicated that the products were tetragonal SnO₂ nanowires with diameters of 10–50 nm. The nanowires were single crystal and solid inside. Dendritic nanowires were observed for the first time. Three vibrational modes were observed in the Raman spectra of the samples. Received: 7 January 2002 / Accepted: 11 April 2002 / Published online: 19 July 2002     

Impact of growth temperature on the crystal habits,forms and structures of VO<Subscript>2</Subscript> nanocrystals

We investigated the impact of the process temperature on the habits, forms and crystal structure of VO₂ nanocrystals grown by a vapor-transport method on (0001) quartz substrates. Four distinct growth regimes were discerned: orthorhombic nanowires, sheets, hemispheres, and nanowires with a monoclinic structure. The nanostructures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). I/V characterization of individual nanowires was enabled by Ti/Au contact formation via electron beam lithography and lift-off techniques. The expected metal–insulator transition (MIT) was found in monoclinic VO₂ nanowires.     

Synthesis of GaN nanowires by Tb catalysis

Rare earth metal seed Tb was employed as catalyst for the growth of GaN wires. GaN nanowires were synthesized successfully through ammoniating Ga₂O₃/Tb films sputtered on Si(1 1 1) substrates. The samples characterization by X-ray diffraction and Fourier transform infrared indicated that the nanowires are constituted of hexagonal wurtzite GaN. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy showed that the samples are single-crystal GaN nanowire structures. The growth mechanism of the GaN nanowires is discussed.     

Synthesis of <Emphasis Type="Italic">β</Emphasis>-Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> nanowires as a broadband emitter

High-density monoclinic β-Ga₂O₃ nanowires were synthesized by a vapor transport method with controlled ambient oxygen. The structures and morphology were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HR-TEM). X-ray diffraction and HR-TEM analysis indicate that the as-grown β-Ga₂O₃ nanowires are single crystals with monoclinic structure. Intense four-band emissions covering the range from ultraviolet (UV) to visible were observed in photoluminescence (PL) spectra at room temperature. The main emission bands of deep blue (3.04 eV) to green (2.37 eV) for β-Ga₂O₃ nanowires were adjusted by controlling the partial pressure of oxygen. This work demonstrates a low-cost and facile process for optoelectronics applications.     

Large scale synthesis of silicon nanowires

Artificial nanostructures (Samuelson et al., Physica E 21:560–567, 2004; Xia et al., Adv Mater 15:353–389, 2003) show promise for the organization of functional materials (Huck and Samuelson, Nanotechnology 14:NIL_5–NIL_8, 2003) to create nanoelectronic (Mizuta and Oda, Science 279:208–211, 2008) or nano-optical devices (Mazur et al.; Tanemura et al., Synthesis, Optical Properties and Functional Applications of ZnO Nano-materials: A Review, 1–3:58–63, 2008). However, in most manufacturing recipes described so far, nanostructures are synthesized in solution and/or uncontrolled deposition results in random arrangements; this makes it difficult to measure the properties of attached nanodevices or to integrate them with conventionally fabricated microcircuitry. Here, we describe a fully CMOS compatible process technology for mass manufacture of polysilicon nanowires by the CVD (chemical vapor deposition) method. The large scale production of nanowires could successfully be synthesized on silicon (100) substrates. However, the method presented here can successfully be employed with all technologically useful substrates with good adhesion for silicon such as SiO₂, diamond-like carbon or III–V semiconductors. This opens up the possibility for the fabrication of strain-sensitive and defect-sensitive optoelectronic devices on the optimum III–V substrate (Fonstad et al.). Finally, scanning electron microscopy (SEM) was used to characterize the as-synthesized nanowires and energy-filtered transmission electron microscopy (EFTEM) and scanning transmission electron microscopy (STEM) analysis were used to determine the nanowire composition.     

Fabrication of two types of one-dimensional Si–C nanostructures by laser ablation

Two types of one-dimensional (1D) nanostructures—amorphous silicon carbide (SiC) nanowires, 5–30 nm thick and 0.5–2 μm long, and carbon nanotubes (CNTs) filled completely with crystalline SiC nanowires, 10–60 nm thick and 2–20 μm long—were synthesized by the laser ablation of carbon-silicon targets in the presence of high-pressure Ar gas up to 0.9 MPa. All the CNTs checked by transmission electron microscopy contained SiC, and no unfilled CNTs were produced. We discuss the growth of the two nanostructures based on the formation of molten Si–C composite particles and their instabilities leading to the precipitation of Si and C.     

Efficient synthesis of ZnO nanoparticles,nanowalls, and nanowires by thermal decomposition of zinc acetate at a low temperature

ZnO nanoparticles, nanowires, and nanowalls were synthesized rapidly on Si via thermal decomposition of zinc acetate by a modified chemical vapor deposition at a low substrate temperature of 200–250°C for the first time. The diameters of the synthesized nanoparticles and nanowires are around 100 and 30 nm, respectively, and the thickness of nanowalls is around 20 nm. High-resolution transmission electron microscopy shows that the nanowires as well as nanowalls are single-crystalline, and the nanoparticles are highly-textured poly-crystalline structures. Room-temperature photoluminescence spectra of the nanostructures show strong ultraviolet emissions centered at 368–383 nm and weak violet emissions at around 425 nm, indicating good crystal quality. The study provides a simple and efficient route to synthesize ZnO diverse nanostructures at low temperature.     

Size and density control of silicon oxide nanowires by rapid thermal annealing and their growth mechanism

In this work, we demonstrate a fast approach to grow SiO₂ nanowires by rapid thermal annealing (RTA). The material characteristics of SiO₂ nanowires are investigated by field emission scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field (HAADF) imaging, electron energy loss spectroscopy (EELS), and energy-filtered TEM (EFTEM). The HAADF images show that the wire tip is predominantly composed of Pt with brighter contrast, while the elemental mappings in EFTEM and EELS spectra reveal that the wire consists of Si and O elements. The SiO₂ nanowires are amorphous with featureless contrast in HRTEM images after RTA at 900°C. Furthermore, the nanowire length and diameter are found to be dependent on the initial Pt film thickness. It is suggested that a high SiO₂ growth rate of >1 μm/min can be achieved by RTA, showing a promising way to enable large-area fabrication of nanowires.     

Synthesis and characterization of cadmium hydroxide nanowires by arc discharge method in de-ionized water

In this study, Cd(OH)₂ nanowires have been synthesized by using arc discharge method in de-ionized water. The morphology and properties of the Cd(OH)₂ nanowires were characterized by X-ray diffraction analysis (XRD), scanning electron microscopy, transmission electron microscopy (TEM), and UV–Vis spectroscopy. TEM observations revealed that Cd(OH)₂ nanowires were abundant morphology in synthesized nanostructures, and the diameter of the Cd(OH)₂ nanowires ranges from 5 to 40 nm with several micrometers of length. In addition, the width of nanowires is not uniform and varies throughout the nanowire. XRD analysis revealed that the Cd(OH)₂ nanowires grow along [001] direction. Furthermore, hexagonal- and irregular-shaped Cd(OH)₂ nanoplates were synthesized during arc discharge. It was obtained that required arc current is 50 A for the effective and large scale production of Cd(OH)₂ nanowires. Furthermore, the optical properties of the nanowires have been characterized by UV–Vis spectra. By the means of the optical studies, the direct band gap of Cd(OH)₂ nanowires was found to be 4.0 eV with strong quantum size effect. It is also shown that a simple and cheap method which does not require relatively expensive vacuum and laser equipment stipulates an economical alternative for the synthesis of Cd(OH)₂ nanowires.     

Growth and use of metal nanocrystal assemblies on high-density silicon nanowires formed by chemical vapor deposition

In this paper, we describe the growth and potential application of metal nanocrystal assemblies on metal-catalyzed, CVD-grown silicon nanowires (SiNWs). The nanowires are decorated by chemical assembly of closely spaced (1–5 nm) Ag (30–100 nm diameter) and Au (5–25 nm diameter) nanocrystals formed from solutions of AgNO₃ and NaAuCl₄·2H₂O, respectively. The formation and growth of metal nanocrystals is believed to involve the galvanic reduction of metal ions from solution and the subsequent oxidation of available Si-hydride sites on the surfaces of the nanowires. A native oxide layer suppresses formation of metal nanocrystals; adding HF to the ionic solutions significantly increases the density of nanocrystals on the surfaces of the nanowires. The nanocrystals coating the nanowires were characterized by X-ray photoelectron spectroscopy, scanning electron microscopy, and X-ray diffraction. Ag nanocrystals on the nanowires afford sensitive detection of Rhodamine 6G (R6G) molecules in the 100 picomolar–micromolar range by surface enhanced Raman spectroscopy. In addition, Au nanocrystals formed on selected surfaces of a substrate of arbitrary shape can serve as effective nuclei for localized nanowire growth. PACS 81.07.b; 81.15.Gh     

Preparation and characterization of titania based nanowires

A new method for preparation of titania nanowires with diameter around 10 nm and length up to 2–3 μm is described. The precursor was prepared from sodium titanate by adding ethylene glycole (EG) and heating at temperature of 198°C for 6 h under reflux. The sodium titanate glycolate formed by this way aggregated into 1D nanostructures and was subsequently transformed into titania glycolate during a chemical treatment with 98% sulfuric acid. Titania nanowires with variable amount of anatase and rutile were prepared by heating to temperatures in the range 350–1000°C. The precursor as well as titania based samples were characterized by X-ray diffraction, Infrared spectroscopy, Scanning electron microscopy, High resolution transmission microscopy, Thermogravimetry, Differential thermal analysis, Evolved gas analysis and Emanation thermal analysis. The nitrogen adsorption/desorption was used for surface area and porosity determination. The photoactivity of the prepared titania samples was assessed by the photocatalytic decomposition of 4-chlorophenol in an aqueous slurry under UV irradiation of 365 nm wavelength.     

Nonlinear refraction of silver nanowires from nanosecond to femtosecond laser excitation

In order to investigate the effect of pulse width and solvent on the nonlinear properties of metal nanostructures, silver nanowires were fabricated in a direct current electric field (DCEF) using a solid-state ionic method and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The nonlinear refractive index (γ) of silver nanowires suspended in ethanol was measured using the Z-scan technique and laser radiation of various (femto-, pico-, and nanosecond) pulse durations. Experimental results indicated that silver nanowires have obvious positive refractive nonlinearities and γ (the Kerr-induced self-focusing) increases as the pulse duration increases from 7.4×10⁻⁸ cm²/GW at 110 fs to 1.6×10⁻⁴ cm²/GW at 8 ns, due to the additional influence of the atomic reorientational Kerr effect in the case of longer pulses. Due to the solvent dependence of the nonlinear behavior of the silver nanowires, the nonlinear absorption and refraction of silver nanowires suspended in de-ionized water are smaller than those of silver samples suspended in ethanol. The thermal nonlinearities are insignificant in our experimental conditions.     

Sol–gel template synthesis and characterization of LaCoO3 nanowires

Densely packed LaCoO₃ nanowires of the rare-earth perovskite-type composite oxide were synthesized within a porous anodic aluminum oxide (AAO) template by means of the sol–gel method using nitrate as raw the material and citric acid as the chelating agent. The results of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) revealed that the LaCoO₃ nanowires possessed a uniform length and diameter, which were controlled by the thickness and the pore diameter of the applied AAO template, respectively. The results of X-ray diffraction (XRD) and the selected area electron diffraction (SAED) indicated that the LaCoO₃ nanowires had a rhombohedral perovskite-type crystal structure. Furthermore, X-ray photoelectron spectroscopy (XPS) demonstrated that LaCoO₃ nanowires were formed. Finally, the formation mechanism of nanowires was also discussed. PACS 61.66.Fn; 61.46.-W; 81.20.Fw     

Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron microscopy and Raman spectroscopy. The nanowires were found to crystallize along the <111>, <112> or <001> growth direction. When growing on the <112> and <111> directions, they revealed a similar crystal quality and the presence of a high density of twins along the {111} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm⁻¹, in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium during growth.     

Temperature-controlled growth and photoluminescence of AlN nanowires

By varying the substrate temperature in the range of 800-1000 °C, the conditions for the synthesis of AlN nanowires were optimized. Al powders were heated under flowing ammonia gas. The samples were characterized by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and photoluminescence (PL) spectroscopy. Based on the absence of tip particles, the growth mechanism of AlN nanowires was considered to follow a vapor-solid process. The overall intensity of the PL spectra was increased by increasing the synthesis temperature, whereas their shapes were changed by varying the synthesis temperature. The associated emission mechanisms are discussed.