拍波激光加速器中的频率匹配

本文从广义协变的运动方程和麦克斯韦方程出发,导出了电子等离子体波各量的解析表达式。指出△ω=2ω_p的等离子体波是完全简谐的。完全共振的条件由△ω=2ω_(p0)[1+(e²(A₂⁽⁽¹⁾²⁾+(A₂^((2)2))/(2m²c⁴)+(3e²A₂⁽¹⁾A₂⁽²⁾)/(m²c⁴)]^-1/2 给出。 关键词：     

Si3N4Si量子点电子结构的理论研究

采用经表面优化的对称球形团簇作Ｓｉ₃Ｎ₄，Ｓｉ晶态量子点的模型，利用紧束缚近似和ｒｅｃｕｒｓｉｏｎ方法研究了它们的电子结构，给出了导带底和价带顶位置随量子点尺寸的变化。得到了３２８原子Ｓｉ₃Ｎ₄量子点、３２３原子Ｓｉ量子点的中心原子局域态密度及平均态密度，并讨论了态密度和光谱结构的关系，中心原子局域态密度能较好地描述量子点的光谱，这一点得到了实验结果的证实。 关键词：     

R1-xPrxBa2Cu3O7-δ超导Tc平台的离子尺寸效应

系统地研究了Ｒ_1-xＰｒ_xＢａ₂Ｃｕ₃Ｏ_7-δ的超导Ｔ_c与Ｐｒ替代浓度ｘ的关系。发现在离子半径ｒ_i≤ｒ_i（Ｄｙ）时，在低Ｐｒ浓度范围内存在一个超导Ｔ_c平台，并且平台宽度表明一个Ｒ^３＋离子尺寸效应。我们认为，Ｔ_c平台宽度的离子尺寸效应可能起源于Ｐｒ４ｆ电子局域态的改变。提出一个临界Ｒ^３＋离子半径ｒ_ic，ｒ_i＞ｒ_ic时ＲＢａ₂Ｃｕ₃Ｏ_7-δ的超导电性消失 关键词：     

稀土离子电声子耦合S因子的计算

本文给出了计算多声子跃迁中电声子耦合最小S因子的公式,它具有不依赖晶格振动具体模式的优点,在此基础上具体估算了LaF₃晶体中Ho³⁺稀土杂质在 ⁵F₁,⁵F₄,⁵F₅,⁵G₄,⁵G₅能级之间的多声子跃迁的S因子,得到S为0.05左右,这是与通常的实验结果相符的。 关键词：     

调谐激光晶体Cr3+:ZnWO4光致发光特性的研究

研究了调谐激光晶体Ｃｒ³⁺：ＺｎＷＯ₄的光致发光特性。报道了它的吸收光谱、激发光谱、发射光谱及其随温度的变化、零声子跃迁和发射寿命等实验结果，并讨论了激发特性、电子－声子耦合作用、ＺｎＷＯ₄中Ｃｒ³⁺的发射寿命曲线等相关问题。 关键词：     

绿宝石晶体中(CrO6)9－团簇局域极化现象的理论研究

基于配位场理论,建立d³组态离子在三角晶场中的完全能量矩阵,采用完全能量矩阵的对角化计算方法,研究了绿宝石晶体Cr³⁺：Be₃Al₂(SiO₃)₆的光谱和EPR谱,理论值与实验值符合得很好.通过分析绿宝石晶体中(CrO₆)^9-团簇的光谱和EPR谱,研究了配体在络合物中的极化现象.结果表明由于周围配位环境的影响,绿宝石晶体中(CrO< 关键词： 3+：Be₃Al₂(SiO₃)₆体系')" href="#">Cr³⁺：Be₃Al₂(SiO₃)₆体系 光谱 EPR谱 局域结构极化     

Pr3+在SBN晶体中的发光特性

通过测量Ｐｒ：ＳＢＮ晶体的吸收光谱和荧光光谱来确定Ｐｒ³⁺在ＳＢＮ晶体中的能级位置。由于Ｐｒ³⁺离子占据晶体中的不同格位而引起荧光带呈现双峰结构。测量荧光寿命随温度的变化关系，表明Ｐｒ³⁺在ＳＢＮ晶体中 ³Ｐ₀态的无辐射弛豫主要是 ³Ｐ₀→¹Ｄ₂多声子弛豫过程。 关键词：     

GeO分子激发态的电子结构和跃迁性质的组态相互作用方法研究

应用多参考组态相互作用方法计算了GeO分子的第一解离极限(Ge(³P_g)+O(³P_g))对应的18个Λ-S电子态的电子结构. 计算中纳入了Ge原子的3d轨道电子的内壳层-价壳层电子关联效应、标量相对论效应和Davidson修正. 基于计算的电子态的电子结构, 通过求解径向Schrödinger方程获得了束缚电子态的光谱常数R_e, T_e, ω_e, ω_eχ_e, B_e, 理论计算给出的这些电子态的光谱常数与之前的实验结果符合得很好. 计算了电子态的电偶极矩随核间距的变化, 分析了电子态的组态成分的变化对电偶极矩的影响. 计算的势能曲线表明, 激发态A¹Π, 1¹Σ^-, D¹Δ, a³Π, a’³Σ⁺, d³Δ 和 e³Σ^-的绝热激发能密集地分布于26000-37000 cm^-1范围内, 这些密集分布的电子态之间的相互作用对振动波函数有明显扰动作用. 借助于激发态之间的自旋-轨道耦合矩阵元, 阐明了邻近的激发态对A¹Π和a³Π的扰动作用. 基于计算的A¹Π-X¹Σ⁺和A’¹Σ⁺-X¹Σ⁺跃迁的电偶极跃迁矩和Franck-Condon 因子, 给出了A¹Π 和A’¹Σ⁺态的最低的六个振动能级的辐射寿命.     

β型烧绿石结构氧化物超导体$lt;i$gt;A$lt;/i$gt;Os$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;6$lt;/sub$gt;($lt;i$gt;A$lt;/i$gt;=K,Rb,Cs)电子能带结构的第一性原理计算

用全势线性缀加平面波方法计算β型烧绿石结构氧化物超导体AOs₂O₆ （A=K,Rb,Cs）的电子能带结构及态密度.计算发现电子自旋轨道耦合和在位库仑势U的作用增大了费米面处态密度值.通过计算还得到这三种化合物电子关联常数λ_c分别为1.55,1.12和0.73.由实验测量与能带计算得到的电子比热容系数的比值得到电子质量提高参数.通过分析这三种化合物电子质量提高参数,推算出它们的电声子耦合常数λ_ep分别为1.56,0.78和1.08.由此提出KOs₂O₆为强电子关联和强电声子耦合系统,而RbOs₂O₆和CsOs₂O₆的电子关联性与电声子耦合为中等. 关键词： β型烧绿石超导体 能带结构 电子关联 电声子耦合     

电场诱导(MgO)12储氢的从头计算研究

管状(MgO)₁₂是(MgO)_n的幻数团簇, 非常稳定. 为研究电场对其储氢性能的影响, 本文在B3LYP/6-31G^**水平上研究了电场中H₂在(MgO)₁₂管状结构上的吸附性质. 结果表明 (MgO)₁₂能承受强电场而保持管状结构并被极化, 其偶极矩增大为场强0.01 a.u. 和0.02 a.u.时的9.21和19.39 deb (1 deb=3.33564×10^-30C·m). H₂能稳定吸附在单个Mg/O原子上. 无电场时H₂在Mg上为侧位吸附, 而在O上为端位吸附; 电场中, H₂在Mg和O上均为端位吸附, 且其分子取向沿外电场方向. 由于(MgO)₁₂ 及H₂均被电场极化, 因此H₂在(MgO)₁₂部分位置上的吸附强度显著提高. H₂在3配位的Mg/O上的吸附能由无电场时0.08/0.06 eV分别提高到场强为0.01 a.u.和0.02 a.u.时的0.12/0.11 eV 和0.20/0.26 eV. 电子结构分析表明H₂吸附在Mg原子上时, 向团簇转移电荷, 电场极化效应是其吸附能较无电场时增大的主要原因. 吸附在O原子上时, 一方面由于O阴离子极化效应更强; 另一方面, H₂从(MgO)₁₂得到电荷, 其价轨道与团簇价轨道重叠形成化学键, 因此电场效应更显著. 电场中(MgO)₁₂最多能吸附16个H₂, 相应的质量密度为6.25 wt%.     

Electron-phonon interaction inP-doped silicon at low temperatures

In this present work, we explain the thermal conductivity results ofP doped silicon for impurity concentration 4.7×10¹⁷ and 1.0×10¹⁸ cm^–3 by applying the theory of scattering of phonons by electrons in the mixed state i.e. both in the localised state and in the metallic state. Using Mikoshiba's inhomogeneity model we calculated the number of electrons in the bound region and in the conduction band region and using the relaxation rates of both bound electron-phonon scattering and Ziman-Kosarev theory of free electron-phonon scattering, we explain the thermal conductivity values from 2 to 40 K. The values of density-of-states effective mass and dilatation deformation potential are found to be in agreement with the experimental values for silicon, for the electron concentration in the conduction band. We have also taken into account the effect of impurity scattering due to doped impurities, along with isotope scattering.     

Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon

The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 10¹⁶ cm^?3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10^?3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.     

New mechanism of impurity conduction in lightly doped crystalline noncompensated silicon

It is found that the plastic deformation of lightly doped crystalline silicon samples (N<6×10¹⁶ cm^?3) with a low compensation (K～3×10^?2) gives rise to nonohmic conduction σ_M in electric fields that differs radically from conventional hopping conduction via the ground states of impurities (σ₃). The values of σ_M can exceed values of σ₃ by a factor of 10³?10⁵. The value of σ_M and its dependence on the electric (E) and magnetic (H) fields can be controlled by varying the density of dislocations and the mode of thermal sample treatment. A strong anisotropy of σ_M is observed in samples with oriented dislocations: the conductivities along and across dislocations can differ by a factor of 10⁴. The results are explained by the occurrence of conduction via the H^?-like states of impurities concentrated in the vicinity of dislocations. The levels of these states lie between the upper and the lower impurity Hubbard bands.     

Effects of the overlap between wave functions of impurity centers on the activation energy of hopping conduction

The hopping conductivity σ₃ has been studied in samples of slightly counterdoped crystalline Si: B with a boron concentration of 2×10¹⁶ cm^?3<N<10¹⁷ cm^?3 and a compensation of 10^?4≤K≤10^?2. It is found that at K≤10^?3 the activation energy ε₃ is not lower (as it must be according to classical notions at finite K) but larger than the value ε_N=e ² N ^1/3/κ, where e is the electronic charge and κ is the dielectric constant. With decreasing N, the energy ε₃ drops slower and, with decreasing K, grows faster than follows from the standard theory. At K≤10^?4, ε₃ is higher than ε _N by a factor of 1.5–2. The result is explained by the effect of the overlap between wave functions of neighboring impurity centers on the structure of the impurity band.     

硅的低温电学性质

本文在20°—300°K研究了室温载流子浓度2×10¹²—1×10²⁰cm^-3含硼或磷(砷)Si的电学性质。对一些p-Si样品用弱场横向磁阻法及杂质激活能法进行了补偿度的测定,并进行了比较。从霍尔系数与温度关系的分析指出,对于较纯样品,硼受主能级的电离能为0.045eV,磷施主能级为0.045eV,在载流子浓度为10¹⁸—10¹⁹cm^-3时发现了费米简并,对载流子浓度为2×10¹⁷—1×10¹⁸cm^-3的p-Si及5×10¹⁷—4×10¹⁸cm^-3的n-Si观察到了杂质电导行为。从霍尔系数与电导率计算了非本征的霍尔迁移率。在100°—300°K间,晶格散射迁移率μ满足关系式AT^-a,其中A=2.1×10⁹,α=2.7(对空穴);或A=1.2×10⁸,α=2.0(对电子)。另外,根据我们的材料(载流子浓度在5×10¹¹—5×10²⁰cm^-3间),分别建立了一条电阻率与载流子浓度及电阻率与迁移率的关系曲线,以提供制备材料时参考之用。     

Effect of surface states on the amphoteric behavior of Sn in vapor epitaxial GaAs

The amphoteric behavior of Sn, a commonly-used dopant in AsCl₃GaH₂ vapor epitaxy, is examined for Sn concentration from 5 × 10¹⁴ to 5 × 10¹⁷cm^?3. The compensation ratio $\text{(}\text{N}{}_{\mathrm{A}}\text{N}{}_{\mathrm{D}}\text{)}$ remains constant at 0.23 for low concentrations and begins to increase in the 10¹⁶cm^?3 range. This behavior can be explained quantitatively with non-equilibrium impurity incorporation model which takes into account 3 × 10¹¹ cm^?2 surface states.     

Transient InSb spin-flip laser - a measurement of T1

A double pulse spin-flip laser technique has been used to evaluate the InSb conduction electron spin-relaxation time T₁; a value of 60 ± 20 nsec (n = 1.2 × 10¹⁶cm^?3, H = 60 kG, T = 20 K)is obtained. The effects of electron heating by free carrier absorption are measured and an energy relaxation time of 20–40 nsec is obtained. A calculation of T₁ based on ionized impurity scattering in the quantum limit regime is in order of magnitude agreement with the experiment.     

The optical conductivity of free carriers in GaAs

The optical conductivity of free electrons in polar semiconducting compounds has recently been calculated by use of a generalized Boltzmann equation derived from the equation of motion of the quantum density matrix. This reduces to the quasi-classical Boltzmann transport equation in the low frequency limit: the optical conductivity thus obtained spans a spectral range from around 30cm^?1 to 1.2 × 10⁴cm^?1 in GaAs. In this paper, the optical conductivity is calculated for GaAs as a function of carrier concentration in terms of a frequency dependent relaxation time which reduces to the usual relaxation time in the limit of low frequencies and an elastic scattering mechanism. The low frequency limit of the relaxation time is used to estimate the mobility as a function of carrier concentration. The frequency dependent relaxation time is given for GaAs at 298 K over the spectral region from 45 cm^?1 to 2.3 × 10³cm^?1 for carrier concentrations from 3.4 × 10¹⁵cm^?3 to 8.7 × 10¹⁸cm^?3.     

Generation Kinetics of Nonequilibrium Charge Carriers in Crystals with Deep Impurities Involving Two-Center Transitions between Band and Impurity States

A new and efficient mechanism of nonlinear photoexcitation of a transparent crystal with deep impurity centers is proposed. It is hypothesized that the energy of a quantum of light is smaller than the energy gap between the bottom of the conduction band and the impurity level, but is larger than the gap between the impurity level and the top of the valence band. The kinetics of nonlinear cascade generation of nonequilibrium charge carriers is considered taking into account two-center processes in which the energy transfer and the photon absorption occur in one and the same elementary event. The dependences of the quasi-equilibrium concentrations of nonequilibrium charge carriers in the bands and of the occupancy of impurity states on the laser-radiation intensity are obtained. It is shown that the generation process of nonequilibrium electron–hole pairs is of a threshold nature. Depending on the concentration of impurity centers, the threshold intensities can be ~10⁵–10⁷ W/cm², while the setting time of the quasi-equilibrium occupancies of electronic states is ~10–0.1 ns.     

Electrical properties of n-type vapor-grown gallium nitride

Hall measurements are reported for undoped and Zn-doped vapor-grown single crystal GaN on (0001) Al₂O₃ layers with 298 K carrier concentrations (n-type) between 1·4×10¹⁷cm^?3 and 9×10¹⁹ cm^?3. Then n～10¹⁷ cm^?3 crystals (undoped) have mobilities up to μ～440 cm²/V sec at 298 K. Their conduction behavior can be described by a two-donor model between 150 and 1225 K and by impurity band transport below 150 K. Crystals with n≥8×10¹⁸ cm^?3 show metallic conduction with no appreciable variation in n or μ between 10 and 298 K.Results of mass spectrographic analyses indicate that the total level of impurities detected is too low to account for the observed electron concentration at the n～10¹⁹ cm^?3 level, and suggest the presence of a high concentration of native donors in these crystals. No significant reduction in carrier concentration was achieved with Zn doping up to concentrations of ～10²⁰ cm^?3 under the growth conditions of the present work, and no evidence was found to indicate that high conductivity p-type behavior may be achieved in GaN. The influence of factors such as growth rate, crystalline perfection and vapor phase composition during growth on the properties of the layers is described.