Magnetoresistance of a Two-Dimensional TbTe<Subscript>3</Subscript> Conductor in the Sliding Charge-Density Wave Regime

The magnetoresistance of a TbTe₃ two-dimensional conductor with a charge-density wave (CDW) has been measured in a wide temperature range and in magnetic fields of up to 17 T. At temperatures well below the Peierls transition temperature and in high magnetic fields, the magnetoresistance exhibits a linear dependence on the magnetic field caused by the scattering of normal charge carriers by “hot” spots of the Fermi surface. In the sliding CDW regime in low magnetic fields, a qualitative change in the magnetoresistance has been observed associated with the strong scattering of carriers by the sliding CDW.     

High-field magnetoresistance of noble metals containing rare-earth impurities

We report on magnetoresistance measurements in longitudinal and transverse magnetic fields up to 320 kG for silver and gold containing rare-earth impurities. We focus mainly on the strong anisotropy of the magnetoresistance related to the scattering of conduction electrons by the 4f quadrupoles (non-S ions) and we derive the magnitude of the electron-quadrupole interaction from the analysis of the results. We also consider the isotropic contribution to the magnetoresistance due to exchange scattering. In a number of alloys this contribution is negative in low fields, as this is usually observed in magnetic alloys, but becomes positive in high fields. This change of spin can be ascribed to crystal-field effects.     

Semiclassical negative magnetoresistance of a 2D electron gas caused by scattering by short-range and long-range potentials

The magnetoresistance of a 2D electron gas confined in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers is studied in the classical range of magnetic fields. It is shown that the negative magnetoresistance observed in this kind of structures with nonplanar heterointerfaces is semiclassical and qualitatively agrees with the model of negative magnetoresistance due to the scattering of charge carriers by two types of random potential, namely, the short-range and long-range ones.     

In0.53Ga0.47As/In0.52Al0.48As量子阱中的正磁电阻效应

在低温强磁场条件下,对In_0.53Ga_0.47As/In_0.52Al_0.48As量子阱中的二维电子气进行了磁输运测试.在低磁场范围内观察到正磁电阻效应,在高磁场下这一正磁电阻趋于饱和,分析表明这一现象与二维电子气中的电子占据两个子带有关.在考虑了两个子带之间的散射效应后,通过分析低磁场下的正磁电阻,得到了每个子带电子的迁移率,结果表明第二子带电子的迁移率高于第一子带电子的迁移率.进一步分析表明,这主要是由两个子带之间的 关键词： 二维电子气 正磁电阻 子带散射     

Der Einfluß struktureller Fehlstellen in polykristallinem Kupfer auf den Magnetwiderstand

The longitudinal magnetoresistance of polycrystalline copper wires was observed at 4,6°K after various treatments. Deviations of the Kohler rule occur when the predominant scattering centers are changed from foreign atoms to self-interstitials and vacancies and to Frank dislocation loops. The experimental results show that the magnetoresistance depends on the configuration of scattering centers and can be used to investigate the scattering potentials for conduction electrons.     

Disturbance of tunneling coherence by oxygen vacancy in epitaxial Fe/MgO/Fe magnetic tunnel junctions

Oxygen vacancies in the MgO barriers of epitaxial Fe/MgO/Fe magnetic tunnel junctions are observed to introduce symmetry-breaking scatterings and hence open up channels for noncoherent tunneling processes that follow the normal WKB approximation. The evanescent waves inside the MgO barrier thus experience two-step tunneling, the coherent followed by the noncoherent process, and lead to lower tunnel magnetoresistance, higher junction resistance, as well as increased bias and temperature dependence. The characteristic length of the symmetry scattering process is determined to be about 1.6 nm.     

Electron magnetotransport in carbon nanotubes and negative magnetoresistance: The density matrix method

A solution (stationary and linear in electric field) to the kinetic equation for a one-electron density matrix in an arbitrary magnetic field is found for deformation-potential scattering in the approximation of a small deviation of the electron gas from equilibrium. An expression for the nanotube conductivity is obtained in the form of a sum over magnetic-quantization states. In the absence of a magnetic field, this expression coincides with the corresponding classical relations. In weak magnetic fields, the magnetoresistance of a multilayer nanotube is positive for high electron mobilities and negative for low mobilities. In intermediate fields, it reverses sign with increasing field strength. The magnetoresistance of a one-layer nanotube is always positive.     

Oxygen-vacancy-induced diffusive scattering in Fe/MgO/Fe magnetic tunnel junctions

By first principles analysis, we systematically investigate effects of oxygen vacancies (OV) in the MgO barrier of Fe/MgO/Fe magnetic tunnel junctions. The interchannel diffusive scattering by disordered OVs located at or near the Fe/MgO interface drastically reduces the tunnel magnetoresistance ratio (TMR) from the ideal theoretical limit to the presently observed much smaller experimental range. Interior OVs are far less important in influencing TMR, but they significantly increase the junction resistance. Filling OV with nitrogen atoms restores TMR to near the ideal theoretical limit.     

Enhanced granular magnetoresistance due to ferromagnetic layers

Giant magnetoresistance (GMR) of sequentially evaporated Fe-Ag structures has been investigated. Direct experimental evidence is given, showing that inserting ferromagnetic layers into a granular structure significantly enhances the magnetoresistance. The increase in the GMR effect is attributed to spin polarization effects. The large enhancement (up to more than a fourfold value) and the linear variation of the GMR in low magnetic fields are explained by scattering of the spin polarized conduction electrons on paramagnetic grains.     

Two-dimensional electron gas in a lattice of antidots with a period of 80 nm

The magnetotransport in a two-dimensional electron gas with a lattice of antidots, which has a record-breaking small (80 nm) period and size (20–40 nm) of antidots comparable with the de Broglie wavelength of electrons, has been experimentally studied. A wide variety of new features of the magnetoresistance behavior has been observed both under semiclassical conditions and in the regime of quantizing magnetic fields. In particular, the anomalous semiclassical magnetoresistance peak induced by the nonmonotonic scattering effects has been revealed. The Shubnikov-de Haas oscillations have been revealed to exhibit an unusual transition from the anomalous period constant in the magnetic field to the normal constant in the inverse magnetic field. The effect of the generation and suppression of the oscillations has also been observed; this effect is induced by the transformation of the short and long-range scattering potentials in the lattice owing to the variation of the density of the two-dimensional electrons.     

Magnetoresistive effect in RCu<Subscript>3</Subscript>Mn<Subscript>4</Subscript>O<Subscript>12</Subscript> perovskite-like oxides

The electrical properties of and the magnetoresistive effect in RCu₃Mn₄O₁₂ (R=rare-earth ion or Th) are studied. In all compounds of this series, the magnetoresistive effect amounts to 20% at liquid nitrogen temperature in the presence of a field of 0.9 T. An increase in the magnetoresistance with decreasing temperature and a high sensitivity to weak magnetic fields at low temperatures point to the intergranular nature of the effect. The magnetoresistance shows a peak in the vicinity of the Curie temperature T_C. Based on the dependences of the magnetoresistance on an external magnetic field, it is assumed that the magnetoresistance peak near T_C is related to the charge carrier scattering by magnetic inhomogeneities as in substituted orthomanganites. We believe that the magnetoresistance value near the magnetic ordering temperature depends on the synthesis conditions and the effect of the intergranular spacer on the transport properties of these compounds.     

Low-Temperature anomalies of the Hall coefficient for a magnetic Kondo lattice of CeAl2

The Hall coefficient R _H and magnetoresistance of a magnetic Kondo lattice of CeAl₂ were investigated over a wide temperature range from 1.8 to 300 K in magnetic fields of up to 80 kOe. Analysis of the measured angular dependences R _H(?, T, H) made it possible to separate the contributions of skew scattering and anomalous magnetic scattering to the anomalous Hall effect. The results obtained were compared with the existing theoretical models.     

Angular dependent negative magnetoresistance in Si-MOS (111) inversion layers

The negative transverse magnetoresistance effect was observed in n-inversion layers in Si-MOS (111) surfaces at temperatures between 1.5 and 8.3 K. The negative magnetoresistance depends only on the normal component of the magnetic field to the surface and has a saturation value at high fields. The difference between the resistivity at zero field and that at saturation field increases logarithmically with decreasing temperature such as the effect due to the s-d scattering (Kondo effect).     

Magnetoresistance of the compound CeRu2Ge2

In this work we present a magnetoresistance study on the CeRu₂Ge₂ compound. We analyze the ρ(T) curves for several applied magnetic fields using the electron–magnon scattering model for a ferromagnetic spin arrangement. From this analysis, the field dependence of the energy gap of the magnon spectrum is obtained. The magnetoresistance ρ(H) at various temperatures arises from a normal metal contribution with an additional scattering mechanism due to electron–magnon interaction.     

Longitudinal magnetoresistance of quenched and annealed gold

The deviations of longitudinal magnetoresistance from Kohler's rule have been studied in polycrystalline gold wires. Quenched-in vacancies have been identified as large-angle scatterers of conduction electrons. No small-angle component, similar to that observed earlier for vacancies in platinum, has been detected.Stacking fault tetrahedra formed during low-temperature annealing of quenched samples have been shown to contribute significantly to small-angle scattering, which is probably related to stacking faults themselves. The residual resistivity increment _SF=(4·2±0·5)×10^–18 m² due to stacking faults in gold has been determined.     

Large magnetothermoelectric power in Co/Cu, Fe/Cu and Fe/Cr multilayers

We report and discuss experimental data on the thermoelectric power of magnetic multilayers. Measurements of the thermoelectric power of Fe/Cr, Co/Cu and Fe/Cu multilayers have been carried out in the temperature range 4K < T < 150 K magnetic fields perpendicular to the layers. All specimens were found to exhibit pronounced magnetothermoelectric power (MTEP) effects correlating with their giant negative magnetoresistance. The main difference between the MTEP and the magnetoresistance is in their temperature dependence. Whereas the magnetoresistance is a decreasing function of temperature, the MTEP, at least in Co/Cu and Fe/Cu multilayers, is very small at low temperature and increases rapidly above 30–40 K. We ascribe this high temperature part of the MTEP to spin-dependent electron-magnon scattering and we propose a theoretical model.     

Galvanomagnetic properties of n-type Hg0.8Cd0.2Te

Galvanomagnetic properties of low and high mobility n-Hg_0.8Cd_0.2Te are reported. The experiments were carried out in magnetic fields up to 60 kG and between 1.8 and 77 K. The Hall coefficient does not show thermal and magnetic freeze-out of carriers. At 77 K the transversal magnetoresistance shows a proportionality ?⊥ ∝ B as was predicted by Gurevich and Firsov for the case of polar optical scattering in non-degenerated semiconductors. At 4 K where the mobility is governed by impurity scattering ?⊥ ∝ B^2.4 was observed in the extreme quantum limit. A negative longitudinal magnetoresistance was found at 77 K. The experimental results of high and low mobility samples show significant differences.     

Description of the Colossal Magnetoresistance of La 1.2 Sr 1.8 Mn 2 O 7 Based on the Spin-Polaron Conduction Mechanism in the Ferromagnetic Temperature Range

We have analyzed the resistance of La1.2Sr1.8Mn2(1 – z)O7 single crystal in magnetic fields from 0 to 90 kOe in the ferromagnetic temperature range. The observed magnetoresistance of La1.2Sr1.8Mn2O7 is described based on the spin-polaron conduction mechanism. The magnetoresistance is determined by the change in the sizes and magnetic moment directions of magnetic inhomogeneities (polarons). It is shown that the colossal magnetoresistance is ensured by an increase (along the magnetic field) of the polaron linear size. It is found using the method for separating the contributions of different conduction mechanisms to the magnetoresistance that the contribution to the magnetoresistance from the orientation mechanism at 80 K in low magnetic fields is close to 50%. With increasing magnetic field, this contribution decreases and becomes small in fields exceeding 30 kOe. The comparable contributions to the conductivity from the orientational and spin-polaron mechanisms unambiguously necessitate the inclusion of both conduction mechanisms in the magnetoresistance calculations. We have calculated the temperature variation of the polaron size (in relative units) in zero magnetic field and in a magnetic field of 90 kOe.     

强磁场下Pt电阻温度传感器的磁致电阻效应研究

以Pt电阻温度传感器(Pt-111)为研究对象,研究了其在0～16T磁场下、4.2～300K温区内的磁致电阻效应.结果表明:Pt-111在0～16T场强、4.2～77K温区内,磁效应随场强的增加和温度的降低而明显升高,77～300K温区内温度计受磁场的影响较小,其中在16T下,4.2K和300K处的磁效应分别为48.2%和1.07%;在4.2-77K温区,Pt-111由磁阻引起的测量误差场强的升高和温度的降低而明显升高,在16T、4.2K处和16T、77K处的温度测量误差分别为18.3K和1.69K.Pt-111不推荐应用在77K以下的磁场环境.     

Electron scattering with spin flip in indium antimonide and indium arsenide

The longitudinal magnetoresistance has been investigated at temperatures in the range from 2.8 to 200 K in a magnetic field of up to 200 kOe with the aim of determining the temperature range and the magnetic field strength at which charge carrier scattering with spin flip occurs in n-type indium arsenide and n-type indium antimonide. It is established that quantum oscillations of the longitudinal magnetoresistance of indium arsenide exhibit weak zero maxima due to electron scattering with spin flip at temperatures in the range from 4 to 35 K in a magnetic field of 146 kOe. For the longitudinal magnetoresistance of indium antimonide, zero maxima caused by electron scattering with spin flip are revealed in the temperature range from 60 to 80 K in a magnetic field of 132 kOe.