High-Tc superconductor near the S–I transition

We report on the density of states measurements of Bi2212 (Bi_2+xSr_xCaCu₂O_8+δ) near the superconductivity-insulator transition using a low temperature scanning tunneling microscope. We prepared highly underdoped Bi rich Bi2212 single crystals (T_c  32 K). The energy gap distribution did not provide an energy scale proportional to T_c. Averaged tunnel spectra with various doping levels were scaled into a single line if energy was normalized by their respective gap values. This indicated there was no crossover energy, which separates a pseudogap and a superconducting gap.     

Microwave dielectric properties of (1 − x)(Mg0.95Co0.05)TiO3–x(Na0.5La0.5)TiO3 ceramic system

The microstructures and the microwave dielectric properties of the (1 − x)(Mg_0.95Co_0.05)TiO₃–x(Na_0.5La_0.5)TiO₃ ceramic system were investigated. Two-phase system was confirmed by the XRD patterns and the EDX analysis. A co-existed second phase (Mg_0.95Co_0.05)Ti₂O₅ was also detected. The microwave dielectric properties are strongly related to the density and the matrix of the specimen. A new microwave dielectric material 0.88(Mg_0.95Co_0.05)TiO₃–0.12(Na_0.5La_0.5)TiO₃, possessing an excellent combination of dielectric properties: ε_r  22.36, Q × f  110,000 GHz (at 9 GHz), τ_f  2.9 ppm/°C), is proposed as a candidate dielectric for GPS patch antennas.     

Argon ion laser-induced BaS BΣ-AΣ, A′Π, aΠ, and XΣ fluorescence spectra: Analysis of A A′, A a, and A′ a perturbations

The 333.6-, 351.1-, and 363.8-nm lines of a cw argon ion laser are found to coincide with the BaS B¹Σ⁺-X¹Σ⁺ (12, 0) R(17), (6, 0) P(35), and (3, 0) R(125) transitions, respectively. Fluorescence transitions from the laser-prepared upper levels terminating in X¹Σ⁺ V = 0–28, A¹Σ⁺ V = 1–3, A′¹Π V = 1–13, and a³Π₁ V = 3–12 are assigned. These results are combined with a previous analysis of the extensively perturbed BaS A¹Σ⁺-X¹Σ⁺ system [R. F. Barrow, W. G. Burton, and P. A. Jones, Trans. Farad. Soc.67, 902–906 (1971)]. Every observed perturbation of the BaS A¹Σ⁺ state is electronically and vibrationally assigned. The levels a³Π₀ V = 10–13, a³Π₁ V = 12–14, a³Π₂ V = 15, and A′¹Π V = 10–13 are sampled via their perturbations of A¹Σ⁺ V = 0–2. Although the mutual interactions of the a³Π, A′¹Π, and A¹Σ⁺ states approach Hund's case (c) limit, a complete deperturbation is performed from a case (a) starting point. Of the five lowest energy electronic states of BaS, only b³Σ⁺ remains uncharacterized. Principal deperturbed molecular constants are (in cm⁻¹, 1σ uncertainties in parentheses):

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Submillimeter-Wave Spectroscopy of CO in the aΠ State

Submillimeter-wave absorption spectrum of CO in electronically excited a³Π state was observed in the 540–830 GHz region by using a phase-locked BWO spectrometer. New rotational transitions up to J = 9–8 in the vibrational excited states up to v = 5 were analyzed accompanied with previous observations in the RF and millimeter-wave regions. A multivibrational states fit among a′ ³Σ⁺ (v = 0–3) and a³Π (v = 0–7) states was performed in order to analyze overall perturbation between the a³Π and a′ ³Σ⁺ states. As a result, the deperturbed rotational parameters were derived precisely to improve the RKR potential.     

Thermal annealing effects on I–V–T characteristics of sputtered Cr/n-GaAs diodes

Sputtered Cr/n-GaAs Schottky diodes have been prepared and annealed at 200 and 400 °C. The current–voltage (I–V) characteristics of the as-deposited and annealed diodes have been measured in the temperature range of 60–320 K with steps of 20 K. The effect of thermal annealing on the temperature-dependent I–V characteristics of the diodes has been investigated experimentally. The ideality factor and barrier height (BH) values for 400 °C annealed diode approximately remain unchanged from 120 to 320 K, and those of the as-deposited sample from 160 to 320 K. The departures from ideality at low temperatures have been ascribed to the lateral fluctuations of the BH. The BH values of 0.61 and 0.74 eV for the as-deposited and 400 °C annealed diodes were obtained at room temperature, respectively. A Richardson constant value of 9.83 A cm⁻² K⁻² for 400 °C annealed Schottky diode, which is in close agreement with the known value of 8.16 A cm⁻² K⁻² for n-type GaAs. Furthermore, T₀ anomaly values of 15.52, 10.68 and 5.35 for the as-deposited and 200 and 400 °C annealed diodes were obtained from the nT versus T plots. Thus, it has been seen that the interface structure and quality improve by the thermal annealing at 400 °C.     

Quantum simulation of the t–J model

Computer simulation of a many-particle quantum system is bound to reach the inevitable limits of its ability as the system size increases. The primary reason for this is that the memory size used in a classical simulator grows polynomially whereas the Hilbert space of the quantum system does so exponentially. Replacing the classical simulator by a quantum simulator would be an effective method of surmounting this obstacle. The prevailing techniques for simulating quantum systems on a quantum computer have been developed for purposes of computing numerical algorithms designed to obtain approximate physical quantities of interest. The method suggested here requires no numerical algorithms; it is a direct isomorphic translation between a quantum simulator and the quantum system to be simulated. In the quantum simulator, physical parameters of the system, which are the fixed parameters of the simulated quantum system, are under the control of the experimenter. A method of simulating a model for high-temperature superconducting oxides, the t–J model, by optical control, as an example of such a quantum simulation, is presented.     

The E(4) Πu state in K2 and its perturbations

The E(4) ¹Π_u←X ¹Σ⁺_g band system of the K₂ molecule is investigated by the technique of Doppler-free optical–optical double resonance polarization spectroscopy. The observed vibrational levels v=0 to 9 of the E state are subject to numerous rotational perturbations by the neighboring 4 ³Π_u, 4 ¹Σ⁺_u, and 5 ³Σ⁺_u electronic states. By using deperturbation methods, the potential curves of the 4 ¹Π_u and 4 ³Π_u states are determined as well as some properties of the 4 ¹Σ⁺_u and 5 ³Σ⁺_u state potentials. The results are compared with predictions of ab initio calculations.     

High-Resolution Laser Spectroscopy of YbCl: The AΠ–XΣ Transition

The A²Π–X²Σ⁺ transition of ¹⁷⁴Yb³⁵Cl and ¹⁷²Yb³⁵Cl has been rotationally analyzed for the first time. Doppler-limited laser excitation spectroscopy with selective detection of fluorescence was used to obtain spectra of the 0–0 and 1–0 bands with a measurement accuracy of approximately 0.0035 cm⁻¹. Resolved fluorescence was used to record the 0–1, 0–2, and 0–3 bands and to unequivocally assign the rotational numbering, N, to the laser excitation spectra. In total, over 1300 line positions have been measured and assigned for each of the two isotopomers and employed in least-squares fits of molecular parameters. The principal results for the A²Π state are A_e = 1491.494(2) cm⁻¹ and R_e = 2.4433(1) Å, and for the X²Σ⁺ state, R_e = 2.4883(2) Å and γ_e = 4.59(2) × 10⁻³ cm⁻¹. The interaction between the X²Σ⁺ and A²Π states has been investigated and is shown to be the main contributor to the spin–rotation splitting in the ground state.     

Fourier Transform Spectroscopy of theYΣ–XΠiTransition of CuO

TheY²Σ⁺–X²Π_inear-infrared electronic transition of CuO was observed at high resolution for the first time. The spectrum was recorded with the Fourier transform spectrometer associated with the McMath–Pierce Solar Telescope at Kitt Peak. The excited CuO molecules were produced in a low pressure copper hollow cathode sputter with a slow flow of oxygen. Constants for theY²Σ⁺states of CuO are:T₀= 7715.47765(54) cm⁻¹,B= 0.4735780(28) cm⁻¹,D= 0.822(12) × 10⁻⁶cm⁻¹,H= 0.46(10) × 10⁻¹⁰cm⁻¹, γ = −0.089587(42) cm⁻¹, γ_D= 0.1272(79) × 10⁻⁶cm⁻¹,b_F= 0.12347(22) cm⁻¹, andc= 0.0550(74) cm⁻¹. ImprovedX²Π_iconstants are also presented.     

A molecule with small rotational constants containing an atom with a large nuclear quadrupole moment: The microwave spectrum of trans-1-iodoperfluoropropane

Using pulsed jet chirped-pulse, and cavity-based Fourier transform microwave spectroscopies over 900 transitions have been recorded for the title molecule in the 1–4 GHz and 8–18 GHz regions. The C₁,C₂ and C₃ carbon-13 species have been observed in natural abundance allowing a substitution structure for the CCC backbone to be determined. Nearly all the transitions observed were either a-type R branches or b-type Q branches. No c-type transitions were observed consistent with only the trans conformer being present under our experimental conditions. The χ_aa,χ_bb,χ_cc and χ_ab components of the iodine nuclear quadrupole coupling tensor have been determined. Of note, several forbidden, ΔJ±2 transitions, and one ΔJ±3 transition were observed with quite reasonable intensity. These observations have been rationalized through considerations of near degeneracies between energy levels connected via a large χ_ab value (≈1 GHz).     

Dielectric properties of thin-film ZrO<Subscript>2</Subscript> up to 50 GHz for RF MEMS switches

The dielectric properties of zirconium dioxide (ZrO₂) ceramic thin films were characterized up to 50 GHz using coplanar waveguides (CPWs) and metal–insulator–metal (MIM) capacitors with top circular electrodes. The ZrO₂ films were deposited using a chemical solution onto high-resistivity Si wafers and metal layers. The real part of the dielectric constant of approximately 22 and 26 was extracted at 50 GHz for CPW and MIM structures, respectively, and the loss tangent was approximately 0.09 at 50 GHz. C–V and I–V measurements were carried out to determine low-frequency and DC dielectric properties. The measurement results indicate that ZrO₂ is a promising material to be used as a dielectric layer for radio-frequency (RF) microelectromechanical systems (MEMS) capacitive switches.     

Microwave electric field induced spin transitions of AlAs 2D electrons

We present the first direct electron spin resonance (ESR) on a 2D electron gas in a III–V semiconductor. ESR on a high mobility 2D electron gas in a single AlAs quantum well reveals an electronic g-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimal linewidth of 7 Gauss. Both the signal amplitude and its dependence on the position and orientation of the sample in the cavity unambiguously demonstrate that the spin transitions in our experiment are caused by the microwave electric field. We present a model that ascribes the spin transitions to the effective magnetic field acting on the electron spins that arises from (Bychkov–Rashba) spin-orbit interaction and the modulation of the electron wavevector around k_F induced by the microwave electric field.     

Rotational spectrum of the Ar–dimethyl sulfide complex

The rotational spectra of three isotopomers of the Ar–dimethyl sulfide (DMS) complex – normal, ³⁴S, and ¹³C species – were measured in the frequency region from 3.7 up to 24.1 GHz by Fourier transform microwave spectroscopy. The normal species yielded 43 a-type and 79 c-type transitions. No Ar tunneling splitting was observed, while many transitions were split by the internal rotation of the two methyl tops of the DMS unit. In cases where the K-type splitting was close to that due to methyl internal-rotation, several forbidden transitions were observed that followed b-type selection rules. All of the observed transition frequencies were analyzed simultaneously using a phenomenological Hamiltonian also used in previously published work describing the Ar–dimethyl ether (DME) and Ne–DME complexes. The rotational and centrifugal distortion constants and the potential barrier height to methyl-top internal rotation, V₃, were determined. The rotational constants were consistent with an Ar–DMS center of mass (cm) distance of 3.796 (3) Å and a S–cm–Ar angle of 104.8 (2)°. The V₃ potential barrier obtained, 736.17 (32) cm⁻¹, was 97.8% of the DMS monomer barrier. By assuming a Lennard–Jones-type potential, the dissociation energy was estimated to be 2.4 kJ mol⁻¹, which was close to the value for Ar–DME, 2.5 kJ mol⁻¹.     

High-resolution infrared study of the 2ν3 (A1, E) and ν1 + ν3 (E) bands of NF3

The 2ν₃ overtone (A₁, E) and the ν₁ + ν₃ (E) combination bands of the oblate symmetric top ¹⁴NF₃ were studied by FTIR spectroscopy with a resolution of 2.5 × 10⁻³ cm⁻¹. Nearly 500 lines up to K_max/J_max = 30/43 were observed for the weak A₁ component reaching the v₃ = 2⁰ substate (1803.1302 cm⁻¹), the majority of which corresponded to reinforced K = 3p-type transitions. For the strong E component reaching the v₃ = 2^±2 substate (1810.4239 cm⁻¹), about 3550 transitions were assigned up to K_max/J_max = 65/69, favoring a clear observation of the ℓ(4, −2) and ℓ(4, 4) splittings within the kℓ = −2 and +4 sublevels, respectively. The two v₃ = 2 substates are linked by the ℓ(2, 2)- and ℓ(2, −1)-type interactions, providing severe crossings, respectively, at K′ = 6 and near K′ = 24 on the v₃ = 2⁺² side. A model working in the D-reduction and including all these ℓ-type interactions could reproduce together 3695 nonzero weighted experimental data (NZW) through 33 free parameters with a standard deviation of σ = 0.357 × 10⁻³  cm⁻¹. As for the ν₁ + ν₃ (E) combination band, about 3690 lines were assigned up to K_max/J_max = 45/55. Its v₁ = v₃ = 1 upper state (1931.577 5 cm⁻¹) was treated using the same model recently applied to the v₃ = 1 (E, 907.5413 cm⁻¹) state. It yielded 21 free parameters through 3282 NZW experimental data, adjusted with σ = 0.344 × 10⁻³  cm⁻¹ in the D-reduction. For the two excited states, the small and unobserved ℓ(0, 6) interaction was tested as useless. To confirm the adequacy of the vibrationally isolated models used, some other reductions of the Hamiltonian were tried. For the v₃ = 2 state, the D-, L-, and LD-reductions led to similar σ’s, while the Q one was not successful. For the v₁ = v₃ = 1 state, the D- and Q-reductions gave comparable σ’s, while the QD-reduction was not as good. The corresponding unitary equivalence relations are generally more nicely fulfilled for the v₃ = 2 state than for the v₁ = v₃ = 1 state. The three derivable anharmonicity constants in cm⁻¹ are x₃₃ = −4.1528, g₃₃ = +1.8235 and x₁₃ = −7.9652.     

The sub-millimeter and Fourier transform microwave spectrum of HZnCl (X Σ)

The pure rotational spectrum of HZnCl (X ¹Σ⁺) has been recorded using sub-millimeter direct-absorption methods in the range of 439–540 GHz and Fourier transform microwave (FTMW) techniques from 9 to 39 GHz. This species was produced by the reaction of zinc vapor and chlorine gas with H₂ or D₂ in a d.c. glow discharge for the sub-millimeter studies. In the FTMW measurements, HZnCl was created in a discharge nozzle from Cl₂ and (CH₃)₂Zn. Between 5 and 10 rotational transitions were measured in the sub-millimeter regime for four zinc and two chlorine isotopologues; four transitions were recorded with the FTMW machine for the main isotopologue, each consisting of several chlorine hyperfine components. The data are consistent with a linear molecule and a ¹Σ⁺ ground electronic state. Rotational and chlorine quadrupole constants were established from the spectra, as well as an r_m⁽²⁾ structure. The Zn–Cl and Zn–H bond lengths were determined to be 2.0829 and 1.5050 Å, respectively; in contrast, the Zn–Cl bond distance in ZnCl is 2.1300 Å, longer by 0.050 Å. The zinc–chlorine bond distance therefore shortens with the addition of the H atom. The ³⁵Cl electric quadrupole coupling constant of eQq = −27.429 MHz found for HZnCl suggests that this molecule is primarily an ionic species with some covalent character for the Zn–Cl bond.     

K– mixing in the 1/Nc expansion

We present the result for the invariant factor of K⁰– mixing in the chiral limit and to next-to-leading order in the 1/N_c expansion. We explicitly demonstrate the cancellation of the renormalization scale and scheme dependences between short- and long-distance contributions in the final expression. Numerical estimates are then given, by taking into account increasingly refined short- and long-distance constraints of the underlying QCD Green's function which governs the factor.     

Revised molecular constants and term values for the XΠ and BΣ states of OH

An improved set of molecular constants and term values are given for the X²Π (v = 0–13) and B²Σ⁺ (v = 0 and 1) states of the OH radical. They are derived from a fit of previously published laboratory data and additional lines taken from infrared solar spectra recorded on orbit.     

Scanning tunneling microscopy/spectroscopy on multi-layered cuprate superconductor Ba2Ca5Cu6O12 (O1−x Fx)2

Scanning tunneling microscopy/spectroscopy (STM/STS) measurements on multi-layered cuprate superconductor Ba₂Ca₅Cu₆O₁₂ (O_1−x F_x)₂ are carried out. STM topographies show randomly distributed bright spot structures with a typical spot size of 0.8 nm. These bright spots are occupied about 28% per one unit cell of c-plane, which is comparable to the regular amount of apical oxygen of 20% obtained from element analysis. Tunneling spectra simultaneously show both the small and the large gap structures. These gap sizes at 4.9 K are about Δ 15 meV and 90 meV, respectively. The small gap structure disappears at the temperature close to T_C, while the large gap persists up to 200 K. Therefore, these features correspond to the superconducting gap and pseudogap, respectively. These facts give evidence for some ordered state with large energy scale even in the superconducting state. For the superconducting gap, the ratio of 2Δ/K_BT_C = 4.9 is obtained with T_C = 70 K, which is determined from temperature dependence of the tunneling spectra.     

Analysis of the Δv = 0 sequence of the β(cΦ - aΔ) system of the TiO molecule

Rotational analyses have been performed on the emission spectra of the 0-0, 1-1, 2-2, and 3-3 bands of the β system (c¹Φ - a¹Δ) of the TiO molecule, excited in a microwave discharge through a mixture of helium, oxygen and TiCl₄ vapor. Rotational constants were obtained for all the bands from which the following equilibrium constants were derived. Be^‘=0.52301±0.00008 cm⁻, αe^‘=0.00313±0.0006 cm⁻, re⁻=1.6391±0.0001 AHigher order constants, D_v and H_v, were calculated for the various vibrational levels.     

Consolidation of hydrogenation–disproportionation–desorption–recombination processed Nd–Fe–B magnets by spark plasma sintering

We have successfully consolidated hydrogenation–disproportionation–desorption–recombination (HDDR) processed Nd–Fe–Co–Zr–B–Ga powder by spark plasma sintering (SPS). The field compacted samples were sintered at different temperatures (T_S) from 550 to 600 °C with compressive pressure of 80 MPa for 20 min. Microstructural investigations by transmission electron microscopy indicated that the sintered specimen exhibits Nd₂Fe₁₄B grains of ~300 nm with Nd-rich grain boundary phase. The optimum magnetic properties of B_r: 1.22 T, H_c: 928 kA/m, _BH_c: 600 kA/m, (BH)_max: 210 kJ/m³ were obtained in the sample sintered at 550 °C. The strategy for further improving the coercivity and remanence is discussed based on the microstructure-property relationships.