反铁磁拓扑绝缘体与轴子绝缘体——MnBi2Te4系列磁性体系的研究进展

拓扑物质态是21世纪以来凝聚态物理领域最重要的前沿课题之一。它不仅深化了人们对宏观量子物质态的认识,同时也具有极大的潜在应用价值。目前,非磁性拓扑物质态的研究已经较为完善,而磁性拓扑物质态的研究仍处于初始阶段。近两年来,以MnBi₂Te₄系列体系为代表的本征磁性拓扑绝缘体的出现,迅速掀起了磁性拓扑绝缘体的研究热潮。文章从拓扑物质态的基本理论出发,介绍了近期反铁磁拓扑绝缘体方面的一些重要研究进展,着重阐述了MnBi₂Te₄系列的反铁磁拓扑绝缘体、静态轴子绝缘体以及动态轴子绝缘体,并对磁性拓扑绝缘体的下一步研究进行了展望。

     

拓扑绝缘体(Bi0.5Sb0.5)2Te3薄膜中的线性磁阻

本文报道了拓扑绝缘体(Bi_0.5Sb_0.5)₂Te₃薄膜中线性磁阻问题的系统性研究工作. 此体系中, 线性磁阻在很宽的温度和磁场范围内出现: 磁场高达18 T时磁阻仍没有饱和趋势, 并且当温度不高于50 K时, 线性磁阻的大小对温度的变化不敏感. 栅压调控化学势可明显改变线性磁阻的大小. 当化学势接近狄拉克点时, 线性磁阻最为显著. 这些结果说明电荷分布的不均匀性是引起该材料线性磁阻的根源.     

Bi2Te3拓扑绝缘体表面颗粒化铅膜诱导的超导邻近效应

拓扑绝缘体的出现为寻找拓扑超导体和Majorana费米子提供了一种可能的途径. 在拓扑绝缘体Bi₂Te₃表面沉积极薄的不连续铅膜, 试图通过邻近效应感应出大片的超导区, 为下一步研究拓扑超导电性创造条件.借助四引线电输运测量实验, 在0.25 K的低温下看到了超流现象, 表明沉积在Bi₂Te₃表面的厚度小于20 nm的颗粒化铅膜能够诱导邻近效应, 并且使大片Bi₂Te₃超导. 关键词： 超导邻近效应 S-N-S结 拓扑绝缘体     

二维光子拓扑绝缘体研究进展

受凝聚态拓扑绝缘体研究的启发,整数量子霍尔效应、量子自旋霍尔效应、拓扑半金属、高阶拓扑绝缘体等拓扑物理相继在光学系统中实现.光子系统因能带干净,样品设计简单且制作精度高等优势,逐渐成为研究物理拓扑模型和新型拓扑效应的重要平台.拓扑光子学提供了全新的调控光场和操控光子的方法,其拓扑保护的边界态可实现光子对材料杂质缺陷免疫...     

应变调控下Tl2Ta2O7中的拓扑相变

拓扑电子材料因为具有非平庸的拓扑态,所以会展现出许多奇异的物理性质.本文通过第一性原理计算对应变调控下的烧绿石三元氧化物Tl₂Ta₂O₇中的拓扑相变进行了研究.首先分析了原子轨道投影能带,发现体系费米能级附近O原子的(px+py)与pz轨道发生了能带反转,再构造了紧束缚模型计算得到体系的Z₂拓扑不变量确定了其拓扑非平庸性,最后研究了表面态等拓扑性质.研究发现未施加应变的Tl₂Ta₂O₇是一个在费米能级处具有二次能带交叉点的半金属,而平面内应变会破缺晶体对称性进而使体系发生拓扑相变.当对体系施加–1%的压缩应变时,它会转变为狄拉克半金属;当对体系施加1%的拉伸应变时,体系相变为拓扑绝缘体.本研究对于在三维材料中调控拓扑相变有着较重要的指导意义,并且为低能耗电子器件的设计提供了良好的材料平台.     

轴子拓扑绝缘体候选材料层状Eu1-xCaxIn2As2的物性研究

二维磁性材料的研究推动了现代纳米电子器件的发展.寻找本征的具有磁性的层状材料,为探索研究新的二维磁性材料、制备二维电子器件提供了重要的材料基础.近来,本征二维反铁磁拓扑材料的发现引起了人们的广泛关注和兴趣.EuIn₂As₂被预言是一种轴子拓扑绝缘材料,它具有典型的反铁磁序和层状的晶体结构,其潜在的多种拓扑量子效应可以为未来新型电子学器件提供新的发展思路.实验结果表明EuIn₂As₂处于金属态,而非绝缘态.本文通过掺杂Ca来调节体系的费米能级和磁性,发现Eu_1-xCa₂As₂中仍然存在与母体类似的长程反铁磁的结果.反铁磁矩沿面内方向,符合理论预言的轴子态磁结构.在反铁磁转变温度以上发现了铁磁极化子.由此可见,非磁性杂质掺杂对体系的磁性影响不大,但是载流子浓度却降低了一个数量级,费米能级沿电子型方向进行调制.本文的研究为在二维磁性材料中探索和诱导非平庸拓扑态提供了重要信息.     

单层二维量子自旋霍尔绝缘体1T'-WTe2研究进展

量子自旋霍尔效应通常存在于二维拓扑绝缘体中,其具有受拓扑保护的无耗散螺旋边界态. 2014年,理论预言单层1T’相过渡金属硫族化合物是一类新型的二维量子自旋霍尔绝缘体.其中,以单层1T’-WTe₂为代表的材料体系具有原子结构稳定、体带隙显著、拓扑性质易于调控等许多独特的优势,对低功耗自旋电子器件的发展具有重要的意义.本文总结了单层1T’-WTe₂在实验上的最新进展,包括基于分子束外延生长的材料制备,螺旋边界态的探测及其对磁场的响应,掺杂、应力等手段在单层1T’-WTe₂中诱导出的新奇量子物态等.也对单层1T’-WTe₂未来可能的应用前景进行了展望.     

量子材料GaTa4Se8的基态研究

量子材料GaTa₄Se₈(GTS)不仅展现出绝缘体到金属相变、J_eff量子态以及拓扑超导等多种有趣的物理性质,而且还是电阻开关和存储介质材料,一直以来备受关注。当前科学家们对其绝缘基态的结构仍存在争议,基态结构的不确定阻碍了对其各种物理性质的深入理解。GaTa₄Se₈的绝缘基态长期被认为具有立方对称结构(空间群F43m),其电子能隙是由自旋轨道耦合效应和电子关联共同作用形成的Mott型能隙。最近第一性原理计算表明,立方结构的声子谱存在虚频而不稳定,并预测立方对称存在结构畸变会形成更稳定的三方结构(R3m)或四方结构(F43₁m)。为此,本研究通过压力调节该材料的电子能隙,结合Raman光谱、X射线衍射、电阻测量等多种实验表征手段,对比实验得到的数据与第一性原理计算结果,进一步探索GaTa₄Se₈的基态结构。研究表明三方对称结构(R3m)更符合实验观察结果。     

YBa2Cu3O7-x的金属-绝缘体转变

借助于局域化的标度理论,我们对层状结构系统引进一个由电导各向异性或层间耦合决定的有效维度,认为电导的减小和有效维度的降低是YBa₂Cu₃O_7-x和其它氧化物金属-绝缘体转变的原因,同时也讨论了有限温度的标度理论以解释正常态电阻率的温度行为。 关键词：     

Eu2－xPbxRu2O7中的金属-绝缘体相变和自旋玻璃态行为

通过对Eu_2-xPb_xRu₂O₇(x=0.0, 0.2, 0.4, 0.6, 0.8, 1.0和1.8)系列样品的结构、电阻和磁化率的观测，结果发现，随着Pb替代浓度x值的增加，样品的电阻率逐渐减小，系统在x=0.8附近发生了金属-绝缘体(M-I)相变；Ru⁴⁺的局域磁矩及其自旋玻璃冻结温度T_G也随之降低. 在该体系中，Pb²⁺对Eu³⁺的部分替代使样品中载流子浓度增加，Pb的6p能带与Ru 4d电子的T_2g能带混合，能带得以拓宽，Ru 4d电子的巡游性增强，导致该体系物性的系列变化. 关键词： 自旋几何受挫 2-xPb_xRu₂O₇体系')" href="#">Eu_2-xPb_xRu₂O₇体系 金属-绝缘体相变 自旋玻璃态     

A computational investigation of topological insulator Bi2Se3 film

Topological insulators have a bulk band gap like an ordinary insulator and conducting states on their edge or surface which are formed by spin–orbit coupling and protected by time-reversal symmetry. We report theoretical analyses of the electronic properties of three-dimensional topological insulator Bi₂Se₃ film on different energies. We choose five different energies (–123, –75, 0, 180, 350 meV) around the Dirac cone (–113 meV). When energy is close to the Dirac cone, the properties of wave function match the topological insulator’s hallmark perfectly. When energy is far way from the Dirac cone, the hallmark of topological insulator is broken and the helical states disappear. The electronic properties of helical states are dug out from the calculation results. The spin-momentum locking of the helical states are confirmed. A 3-fold symmetry of the helical states in Brillouin zone is also revealed. The penetration depth of the helical states is two quintuple layers which can be identified from layer projection. The charge contribution on each quintuple layer depends on the energy, and has completely different behavior along K and M direction in Brillouin zone. From orbital projection, we can find that the maximum charge contribution of the helical states is p_z orbit and the charge contribution on p_yand p_x orbits have 2-fold symmetry.     

Bi(110)薄膜在NbSe_2衬底上的扫描隧道显微镜研究

二维拓扑绝缘体因其特殊的能带结构带来的新奇物理性质,成为近年来凝聚态物理的研究热点.尤其是在引入超导电性之后,二维拓扑绝缘体中可能存在马约拉纳费米子(Majorana fermion),因此在量子计算方面具有重大应用前景.在Bi(111)薄膜被证实为二维拓扑绝缘体之后, Bi(110)薄膜引起了广泛关注,然而其拓扑性质还存在争议.本文利用分子束外延技术在室温低生长速率环境下成功制备出了高质量的单晶Bi(110)薄膜.通过扫描隧道显微镜测量发现,薄膜以约8个原子层厚度为分界,从双层生长转变为单层生长模式.结合隧道谱测量发现,在NbSe_2衬底上生长的Bi(110)薄膜因为近邻效应而具有明显的超导性质,但并未显示出拓扑边缘态的存在.此外,对薄膜中特殊的量子阱态现象也进行了讨论.     

Superconductivity and non-metallicity induced by doping the topological insulators Bi2Se3 and Bi2Te3

We show that by Ca doping the Bi₂Se₃ topological insulator, the Fermi level can be fine tuned to fall inside the band gap and therefore suppresses the bulk conductivity. Non-metallic Bi₂Se₃ crystals are obtained. On the other hand, the Bi₂Se₃ topological insulator can also be induced to become a bulk superconductor, with T_c∼3.8 K, by copper intercalation in the van der Waals gaps between the Bi₂Se₃ layers. Likewise, an as-grown crystal of metallic Bi₂Te₃ can be turned into a non-metallic crystal by slight variation in the Te content. The Bi₂Te₃ topological insulator shows small amounts of superconductivity with T_c∼5.5 K when reacted with Pd to form materials of the type Pd_zBi₂Te₃.     

二维GaTe/Bi2Se3异质结：一类有潜力的Z型光解水催化剂

本文基于第一性原理方法,计算了二维GaTe/Bi₂Se₃异质结的电子结构、界面电荷转移、静电势分布、吸收光谱及光催化性质. 计算结果表明异质结是一个小能隙的准直接半导体,能有效捕获太阳光. 由于相对较强的界面內建极化电场和带边轻微弯曲,导致异质结中的光生电子和空穴分别有效分离在GaTe单层和Bi₂Se₃薄片上,可用于析氢和产氧. 这些理论计算结果意味着二维GaTe/Bi₂Se₃异质结是一类有潜力的Z型太阳能全解水催化剂.     

1.12-W Q-switched Yb:KGW laser based on transmission-type Bi2Se3 saturable absorber

We present a passively Q-switched Yb:KGW laser based on a transmission-type saturable absorber of topological insulator:Bi_2Se_3.The saturable absorber is prepared on a 0.17-mm glass substrate and can translate intra-cavity for best performance nearly without influence on the laser mode.At a maximum pump power of 13.7 W,the central wavelength,pulse duration,repetition rate,and pulse energy of Q-switched pulse are 1043 nm,1.5 μs,175.4 kHz,6.39 μJ,respectively.The maximum output power is 1.12 W.To our knowledge,this is the highest average output power from passively Qswitched lasers with topological insulator saturable absorbers.     

Spin Chern numbers and time-reversal-symmetry-broken quantum spin Hall effect

The quantum spin Hall （QSH） effect is considered to be unstable to perturbations violating the time-reversal （TR） symmetry. We review some recent developments in the search of the QSH effect in the absence of the TR symmetry. The possibility to realize a robust QSH effect by artificial removal of the TR symmetry of the edge states is explored. As a useful tool to characterize topological phases without the TR symmetry, the spin-Chern number theory is introduced.     

Electro- and thermoreflectance of Bi2Te3 and Bi2Se3

Electroreflectance measurements in Bi₂Te₃ and Bi₂Se₃ with the electric field vector of the incident light both inclined and perpendicular to the C-axis have been made at room temperature. The structures found by other workers in the reflection measurements are observed in the present experiment, together with new structures at 0.91 eV, 1.18 eV, 1.78 eV, and 2.61 eV in Bi₂Se₃ which are not related to formerly observed transitions. From these measurements, the selection rules for direct optical transitions in Bi₂Te₃ and Bi₂Se₃ are studied. Thermoreflectance measurements are also made at both room and liquid-nitrogen temperatures. The positions of the peaks obtained in the present work are compared with the electroreflectance and reflection data.     

Magnetic and transport properties of Mn-doped Bi2Se3 and Sb2Se3

We report on the single crystal growth and thermoelectric and magnetic properties of Mn-doped Bi₂Se₃ and Sb₂Se₃ single crystals prepared by the temperature gradient solidification method. The composition and crystal structure were determined using electron probe microanalysis and θ–2θ powder X-ray diffraction studies, respectively. The lattice constants of several percent Mn-doped Bi₂Se₃ and Sb₂Se₃ were slightly smaller than those of the undoped sample due to the smaller Mn atomic radius (1.40 Å) than those of Bi (1.60 Å) and Sb (1.45 Å). Mn-doped Bi₂Se₃ and Sb₂Se₃ showed spin-glass and paramagnetic properties, respectively.     

Electronic properties of Bi2Se3 crystals

Bismuth selenide crystals were grown from melts with liquid concentrations within 0·2 per cent of stoichiometry. The resulting crystals were examined structurally showing that single crystal samples could be cut for electronic property measurements. Samples were n-type and degenerate (n ～ 2 × 10²⁵ m^?3). Hall, magnetoresistance and Shubnikov-de Haas measurements confirm that the carriers lie in a single minimum located at the centre of the Brillouin Zone. The results are discussed in terms of a non-ellipsoidal band model, and the degeneracy discussed in terms of a defect model.