Ge/Si混合物纳米薄膜中Ge钠米颗粒氧化态的XPS研究(英文)

pacc:7300,3320R TheoxidationstatesofGenanoparticlesin thesurfacelayerofGe/SifilmwerestudiedbyX-rayphotoelectronspectroscopy.Newfeatures appearedatthehighbindingenergysideofthe XPSGe3dpeakwhensampleswereannealedin atmosphere,whichwerecausedbythelargein ter…     

中子嬗变掺杂前后Ge纳米晶的结构和性质

采用第一性原理计算模拟Ge纳米晶在中子嬗变掺杂(NTD)后受空位、O和As杂质的影响.结果表明,退火方法引入的O并不能消除纳米晶中的辐照致空位缺陷的影响,而NTD 产生的As掺杂能补偿这些空位缺陷并消除禁带中产生的杂质能级,从而改善半导体掺杂性能.计算还发现,由于较高的电负性,纳米晶中O对Ge原子较强的吸附作用阻止了空位的形成,导致与缺陷相关的非辐射发光中心的浓度减小,发光效率提高,因此中子辐照掺杂前的高温退火处理是非常有必要的.计算较好地解释了已报道的实验结果. 关键词： Ge纳米晶 中子嬗变掺杂 第一性原理 空位缺陷     

氧化钙薄膜中缺陷诱导的高居里温度铁磁性研究

通过脉冲激光沉积在(111)取向钇稳定的氧化锆(YSZ)衬底上制备了氧化钙(CaO)薄膜.室温下磁滞回线的实验观测数据表明CaO薄膜具有明显的铁磁性.X射线衍射和X射线光电子能谱分析表明,CaO薄膜为(111)取向,没有杂质相.在高真空条件下生长和退火的CaO薄膜都表现出铁磁性磁化行为,而在相应的CaO靶材上没有检测到...     

钙钛矿型纳米BaFeO3的制备、结构表征及铁磁性研究

采用溶胶-凝胶法制备出钙钛矿型纳米BaFeO3粉末,利用X射线衍射(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)分析研究了其微观结构及形貌,结果表明:胶体试样经800℃退火处理后,形成了20nm左右的钙钛矿型BaFeO3粉末,其(110)面晶面间距为0.280nm左右,(100)面晶面间距为0.401nm左右.利用振动样品磁强计(VSM)研究了纳米BaFeO3粉末的室温铁磁性能,测量结果表明:在室温条件下,纳米BaFeO3粉末具有完整闭合的磁滞回线,具有较小的矫顽力和较低的饱和磁化强度,呈现出明显的弱铁磁性,且铁磁性随退火温度的变化明显.钙钛矿型纳米BaFeO3的铁磁性主要归因于Fe3 _O_Fe4 之间的氧空位.     

氧化钙薄膜中缺陷诱导的高居里温度铁磁性研究（英文）

通过脉冲激光沉积在(111)取向钇稳定的氧化锆(YSZ)衬底上制备了氧化钙(CaO)薄膜.室温下磁滞回线的实验观测数据表明CaO薄膜具有明显的铁磁性.X射线衍射和X射线光电子能谱分析表明,CaO薄膜为(111)取向,没有杂质相.在高真空条件下生长和退火的CaO薄膜都表现出铁磁性磁化行为,而在相应的CaO靶材上没有检测到这种铁磁性.结果表明,氧空位浓度与氧化钙薄膜的磁化强度之间存在一定的相关性,后退火对CaO薄膜磁性的影响说明,氧空位浓度与氧化钙薄膜的铁磁性是相关的.     

利用高压拉曼散射研究Ge/SiO_2/Si纳米系统的压力/张力(英文)

pacc:7830,8100 WereportthepressuredependenceofGe nanocrystalsembeddedinSiO2filmmatrixonSi substrateusingRamanscatteringandfiniteele mentanalysis.DelaminationofSiO2filmfromthe Sisubstrateoccursat～23kbarduetothelarge differencebetweenthecompressibilityoft…     

钙钛矿型纳米BaFeO3的制备、结构表征及铁磁性研究

采用溶胶-凝胶法制备出钙钛矿型纳米BaFeO₃粉末,利用X射线衍射(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)分析研究了其微观结构及形貌,结果表明：胶体试样经800℃退火处理后,形成了20nm左右的钙钛矿型BaFeO₃粉末,其(110)面晶面间距为0.280nm左右,(100)面晶面间距为0.401nm左右.利用振动样品磁强计(VSM)研究了纳米BaFeO₃粉末的室温铁磁性能,测量结果表明：在室温条件下,纳米BaFeO关键词： 溶胶-凝胶法 3')" href="#">钙钛矿型纳米BaFeO₃ 铁磁性 氧空位     

纳米尺度下Si/Ge界面应力释放机制的分子动力学研究

采用分子动力学方法研究了纳米尺度下硅(Si)基锗(Ge)结构的Si/Ge界面应力分布特征,以及点缺陷层在应力释放过程中的作用机制.结果表明:在纳米尺度下, Si/Ge界面应力分布曲线与Ge尺寸密切相关,界面应力下降速度与Ge尺寸存在近似的线性递减关系;同时,在Si/Ge界面处增加一个富含空位缺陷的缓冲层,可显著改变Si/Ge界面应力分布,在此基础上对比分析了点缺陷在纯Ge结构内部引起应力变化与缺陷密度的关系,缺陷层的引入和缺陷密度的增加可加速界面应力的释放.参考对Si/Ge界面结构的研究结果,可在Si基纯Ge薄膜生长过程中引入缺陷层,并对其结构进行设计,降低界面应力水平,进而降低界面处产生位错缺陷的概率,提高Si基Ge薄膜质量,这一思想在研究报道的Si基Ge膜低温缓冲层生长方法中初步得到了证实.     

利用第一性原理研究Ni掺杂ZnO铁磁性起源

采用基于密度泛函理论和局域密度近似的第一性原理分析了Ni掺杂ZnO磁性质.文中计算了8个不同几何结构的铁磁(FM)和反铁磁耦合能量,结果表明FM耦合更稳定.态密度结果显示Ni 3d 与O 2p发生杂化,导致费米能级附近电子态自旋极化.文中也分析了O空位对Ni掺杂ZnO铁磁性质的影响,O空位通过诱导电子调节FM耦合,从而稳定Ni掺杂ZnO铁磁性质,其强度足以引发室温铁磁性.通过Ni 3d能级耦合具体分析了Ni 掺杂ZnO铁磁性起源.另外,也分析了晶格应变对Ni掺杂ZnO FM耦合的影响. 关键词： 第一性原理 半导体 铁磁性 缺陷     

纳米晶Ti薄膜的结构研究

用高密度、高电离度的电子迴旋共振等离子体溅射方法在室温基片上沉积出纳米晶Ti薄膜,基体为玻璃、NaCl单晶、纯Al等。对Ti薄膜的结构、形貌和成分进行X射线衍射(XRD),透射电子显微镜(TEM)和X射线光电子能谱(XPS)分析,表明所沉积的Ti薄膜是平均粒径d<10nm,晶粒大小均匀且具有比较稳定的fcc反常结构的纳米晶粒膜。我们还较系统地研究了各工作参数对Ti薄膜的晶体结构、晶粒尺寸、成膜速率以及对基体粘附力的影响,分析了成膜机理。 关键词：     

Electron-mediated ferromagnetism in Fe-doped InP: Theory and experiment

We report on the electron-mediated ferromagnetism in Fe-doped InP from both first-principles calculations and experiments. Theoretically, based on the spin-polarized density functional theory within the Heyd-Scuseria-Ernzerhof (HSE03) approach, we systematically investigate the magnetic properties of Fe-doped InP and predict the existence of electron-mediated ferromagnetism. Experimentally, by diffusing Fe into the n-type InP wafer with thermal annealing at 800 C, we observe room-temperature ferromagnetism in InP:Fe, which is in agreement with the theoretical prediction.     

High-temperature ferromagnetism in cobalt-doped ZnO single-crystalline nanorods

Co-doped ZnO single-crystalline nanorods with 80–100 nm in diameter and 1.5–2 μm in length have been prepared in a simple solution route. X-ray diffraction data and selected area electron diffraction pattern of the diluted magnetic semiconductor nanorods confirm the single crystallinity of Zn_1−xCo_xO solid solution without impurities of metallic Co or other phases. Magnetic results show that the Zn_0.95Co_0.05O nanorods exhibit a ferromagnetic characteristic with Curie temperature higher than 380 K. The high-temperature ferromagnetic properties allow this Zn_1−xCo_xO nanorods potential applications in future spintronic devices.     

Tunable surface and/or interface ferromagnetism of ZnO nanoparticles

The ZnO-based diluted magnetic semiconductor materials have been widely investigated since the room temperature ferromagnetism (FM) was predicted in the p$p$-type Mn doped ZnO. However, it is now clear that magnetic dopants or impurities are not necessary for introducing FM into ZnO. As confirmed by numerous theoretical and experimental works, tunable FM can be effectively introduced into ZnO nanoparticles (NPs) by controlling the surface and/or interface nanostructures. This review describes the recent advances in the surface and/or interface FM of ZnO NPs without any magnetic impurities. On the basis of the previous reports including our recent works, the origin of FM of ZnO NPs has been overviewed and discussed in terms of defects, complex reactions or compounds, and electron transfer at the NP surface or interface.     

锗/多孔硅和锗/氧化硅薄膜光致发光的比较研究

采用磁控溅射技术,以锗为溅射靶,在多孔硅上沉积锗薄膜,沉积时间分别为4,8和12 min,及以锗-二氧化硅复合靶为溅射靶,在n型硅衬底上沉积了含纳米锗颗粒的氧化硅薄膜,锗与总靶的面积比分别为5%,15%,30%.各样品在氮气氛中分别经过300,600及900℃退火30 min.对锗/多孔硅和锗/氧化硅薄膜进行了光致发光谱的对比研究,用红外吸收谱分析了锗/多孔硅的薄膜结构.实验结果显示,锗/多孔硅薄膜的发光峰位于517 nm附近,沉积时间对发光峰的强度有显著影响,锗层越厚峰强越弱.锗/氧化硅薄膜的发光峰位于580 nm附近,锗与总靶的面积比对发光峰的强度影响较大,锗/氧化硅薄膜中的锗含量越高峰强越弱.不同的退火温度对样品的发光峰强及峰位均没有明显影响.可以认为锗/多孔硅的发光峰是由多孔硅与孔间隙中的锗纳米晶粒两者界面的锗相关缺陷引起的,而锗/氧化硅的发光峰来自于二氧化硅的发光中心.     

电磁轨道炮铁磁材料对铜带内电流分布的影响

作为一种强磁场环境下的新概念动能武器,电磁轨道炮利用脉冲电磁力可加速宏观物体到超高速。然而,其导体内脉冲电流分布是不均匀的,严重时会影响轨道炮发射威力或发射可靠性。针对一种薄带状铜导体结构的复杂电磁轨道炮,根据导体内电流分布的邻近效应原理,提出了在铜导带两侧附加了铁护层的均匀电流方法,并建立了物理模型,利用商业软件对该模型进行了数值仿真,仿真分析结果表明：铁护层的加入,大幅提高了铜导体内电流均匀分布程度,提高了铜导体承载电流的能力。     

The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO3 thin films

Due to the fault of the first author, this article entitled “The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO3 thin films”, published in “Chinese Physics B”, 2011,Vol.20, Issue 12, Article No. 127701, has been found to copy from the article entitled“Decisive role of oxygen vacancy in ferroelectric versus ferromagnetic Mn-doped BaTiO3 thin films”, published in “Journal of Applied Physics”, 2011,Vol.109, Issue 8, article No. 084105. So the above article in “Chinese Physics B” has been withdrawn from the publication.<     

Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

We have deposited a 12 nm thick Ge layer on Si(1 0 0) held at 200 °C by thermal evaporation under high vacuum conditions. Upon subsequent thermal annealing in vacuum, self-assembled growth of nanostructural Ge islands on the Ge layer occurred. Atomic force microscopy (AFM) and grazing incidence small-angle X-ray scattering (GISAXS) were used to characterize such layers. GISAXS measurements evidenced the formation of cylinder shaped structures upon annealing at 700 °C, which was confirmed by AFM measurements with a very sharp tip. A Ge mass transport from the layer to the islands was inferred by X-ray reflectivity and an activation energy of 0.40 ± 0.10 eV for such a process was calculated.     

FeGe纳米线中外延应力导致的铁磁性

对在Ge(111)表面沿着＜11-0＞方向外延生长的单斜FeGe纳米线进行研究,结果发现,虽然块体单斜FeGe相是反铁磁性,其纳米线却在200 K以下表现出强铁磁有序.每个Fe原子的磁矩为0.8 μB.密度泛函计算揭示外延产生的晶格压缩使类派尔斯反铁磁基态失稳,从而稳定实验观察到的铁磁性.