Effects of Tb doping on the photoluminescence of Y2O3:Tb nanophosphors

The effects of Tb doping on the photoluminescence (PL) of Y₂O₃:Tb nanophosphors have been investigated. Nanophosphors were prepared by the glycine-nitrate solution combustion technique using yttria and terbia powders as precursors. PL excitation spectra at room temperature consist of two overlapping bands centered at 277 and 304 nm, whereas emission spectra comprise several groups of lines corresponding to the ⁵D₄→⁷F_J (J=1-6) 4f electronic transitions of the Tb⁺³ ions. A direct comparison of nanophosphor and bulk concentration-quenching curves was obtained by annealing the nanophosphor powder and converting it to bulk material without altering the Tb concentration. The peak in the nanophosphor concentration-quenching curve occurs at a concentration ∼3 times higher than that of the bulk.     

Synthesis of Y2Si2O7:Eu nanocrystal and its optical properties

Nanocrystalline Y₂Si₂O₇:Eu phosphor with an average size about 60 nm is easily prepared using silica aerogel as raw material under ultrasonic irradiation and annealing temperature at 300-600 °C and this nanocrystalline decomposes into Y₂O₃:Eu and silica by heat treatment at 700-900 °C. The excitation broad band centered at 283 and 254 nm results from Eu³⁺ substituting for Y³⁺ in Y₂Si₂O₇ and Y₂O₃/SiO₂, respectively. Compared with Y₂O₃:Eu/SiO₂ crystalline, the PL excitation and emission peaks of Y₂Si₂O₇:Eu nanocrystalline red-shift and lead to the enhance of its luminescence intensity due to the different chemical surroundings of Eu³⁺ in above nanocrystallines. The decrease of PL intensity may be ascribed to quenching effect resulting from more defects in Y₂O₃:Eu/SiO₂ crystalline.     

含Ce3+,Tb3+简单氟化物磷光体的荧光特性

采用溶液反应和固相反应合成了ＣａＦ２：Ｃｅ,Ｔｂ和ＡｌＦ３：Ｃｅ,Ｔｂ磷光体,研究了它们的光谱特性,结果发现,在ＣａＦ：Ｃｅ,Ｔｂ和ＡｌＦ３：Ｃｅ,Ｔｂ中Ｃｅ＾３＋对Ｔｂ＾３＋的能量传递不能有效进行,有时Ｔｂ＾３＋甚至对Ｃｅ＾３＋起猝灭作用。     

Preparation and luminescent properties of cubic Eu:Y2O3 nanocrystals and comparison to bulk Eu:Y2O3

Y₂O₃:Eu³⁺ nanocrystals were prepared by combustion synthesis. The particle size estimated by X-ray powder diffraction (XRD) was about 10 nm. A blue-shift of the charge-transfer (CT) band in excitation spectra was observed in Y₂O₃:Eu³⁺ nanocrystals compared with bulk Y₂O₃:Eu³⁺. The electronic structure of Y₂O₃ is calculated by density functional method and exchange and correlation have been treated by the generalized gradient approximation (GGA) within the scheme due to Perdew-Burke-Ernzerhof (PBE). The calculated results show that the energy centroid of 5d orbital in nanocrystal has increasing trend compared with that in the bulk material. The bond length and bond covalency are calculated by chemical bond theory. The bond lengths of Y₂O₃:Eu³⁺ nanocrystal are shorter than those of the bulk counterpart and the bond covalency of Y₂O₃:Eu³⁺ nanocrystal also has an increasing trend. By combining centroid shift and crystal-field splitting, the blue-shift of the CT band is interpreted.     

Luminescence of La3F3[Si3O9]:Ce

The luminescence properties of Ce³⁺ in La₃F₃[Si₃O₉] are reported. Excitation and emission bands corresponding to 4f¹→5d¹ transitions of Ce³⁺ were identified. The center of gravity of the 5d states lies at remarkable high energy (43.2×10³ cm⁻¹) for Ce³⁺ in a silicate compound. This high value is attributed to the combined oxygen/fluoride coordination of the Ce³⁺ ion. Emission from the lowest 4f5d level to the ²F_5/2 and ²F_7/2 levels was found at 32.4×10³ and 30.4×10³ cm⁻¹. These results are compared with literature data on silicates and fluorides. From the values found for Ce³⁺, predictions are made for the positions of the 4f5d bands of Pr³⁺ and Er³⁺ in La₃F₃[Si₃O₉]. For both ions, it is concluded that in this host lattice emission is expected from high lying 4fⁿ energy levels.     

Crystal structure and photoluminescence of (Y1−xCex)2Si3O3N4

Oxonitridosilicate phosphors with compositions of (Y_1−xCe_x)₂Si₃O₃N₄ (x=0−0.2) have been synthesized by solid state reaction method. The structures and photoluminescence properties have been investigated. Ce³⁺ ions have substituted for Y³⁺ ions in the lattice. The emission and excitation spectra of these phosphors show the characteristic photoluminescence spectra of Ce³⁺ ions. Based on the analyses of the diffuse reflection spectra and the PL spectra, a systematic energy diagram of Ce³⁺ ion in the forbidden band of sample with x=0.02 is given. The best doping Ce content in these phosphors is ∼2 mol%. The quenching temperature is ∼405 K for the 2 mol% Ce content sample. The luminescence decay properties were investigated. The primary studies indicate that these phosphors are potential candidates for application in three-phosphor-converted white LEDs.     

Silica-coated Y2O3:Eu nanoparticles and their luminescence properties

Crystalline Y₂O₃:Eu is of paramount significance in rare earth materials and research on luminescence spectra. In this work, the nanocrystalline Y₂O₃:Eu was coated with silica by a facile solid state reaction method at room temperature. The transmission electron microscope (TEM) photographs showed that the prepared Y₂O₃:Eu particle is polycrystalline with the size of 20 nm, the size of silica-coated particle is about 25 nm. The XPS spectra indicated that the silica layer is likely to interact with Y₂O₃:Eu by a Si-O-Y chemical bond. The luminescence spectra showed that the intensity of ground samples is lower than that of unground ones, the intensity of silica-coated phosphors is higher than that of the ground samples, while almost the same as that of the unground ones. Therefore, the silica coating decreases the surface defects of nanoparticles of the nanocrystalline Y₂O₃:Eu, thus increasing their luminescent intensity.     

Effect of Eu,Tb codoping on the luminescent properties of Y2O3 nanorods

Red-emitting Y₂O₃:Eu³⁺ and green-emitting Y₂O₃:Tb³⁺ and Y₂O₃:Eu³⁺, Tb³⁺ nanorods were synthesized by hydrothermal method. Their structure and micromorphology have been analyzed by X-ray powder diffraction (XRD) and transmission electron microscopy (TEM). The photoluminescence (PL) property of Y₂O₃:Eu³⁺,Tb³⁺ phosphor was investigated. In the same host (Y₂O₃), upon excitation with ultraviolet (UV) irradiation, it is shown that there are strong emissions at around 610 and 545 nm corresponding to the forced electric dipole ⁵D₀-⁷F₂ transition of Eu³⁺ and ⁵D₄-⁷F₅ transition of Tb³⁺, respectively. Different qualities of Eu³⁺and Tb³⁺ ions are induced into the Y₂O₃ lattice. From the excitation spectrum, we speculate that there exists energy transfer from Tb³⁺ to Eu³⁺ ions .The emission color of powders reveals regular change in the separation of light emission. These powders can meet with the request of optical display material for different colors or can be potentially used as labels for biological molecules.     

Energy transfer and luminescent properties of Ce, Cr co-doped Y3Al5O12

The phosphors in the system Y_3−xAl_5-yO₁₂:xCe³⁺,yCr³⁺ were synthesized by solid-state reactions and their photoluminescence properties were investigated. These phosphors have absorption in the visible light region and give luminescence in the far-red region (∼688 nm), which are suitable for the application in the device of luminescent solar concentrator (LSC). In these phosphors, Ce³⁺ located at Y³⁺ site can effectively transfer its absorbed energy to Cr³⁺ at Al³⁺ site.     

Photoluminescent properties of Y2O3:Eu phosphors prepared via urea precipitation in non-aqueous solution

Europium-doped yttrium oxide phosphors were obtained by firing precursors prepared by urea precipitation in ethanol and ethylenediamine. The precipitation in non-aqueous solution was carried out in an autoclave at 150°C to allow the decomposition of urea. The photoluminescent intensities of the phosphors prepared in ethanol and ethylenediamine increased by about 30% compared to that of the phosphor prepared by the conventional urea homogeneous precipitation in aqueous solution. Amorphous carbonates and amorphous hydroxides/carbonates mixtures were identified as precursors from ethanol and ethylenediamine, respectively. The morphology and particle size were studied by SEM and dynamic laser scattering method.     

Oxide coatings on Y3Al5O12:Tb particles

A coating method with precipitating process was developed to reduce the particle size and to improve the particle dispersion of Y₃Al₅O₁₂:Tb³⁺ phosphor prepared by sol-gel method. The particle morphology was observed by using SEM and TEM; and the particle size and its dispersion was measured by using laser scattering technique. Several coating materials were tested. Among them, Al₂(SiO₃)₃ coating not only reduced the particle size from several micrometers to ∼1 μm and improved the particle dispersion, but also well kept luminescent intensities and improved the duration of the phosphor under the bombardment of cathode ray. The mechanism of the particle size reduction was proposed.     

Synthesis and characterization of wire-like and near-spherical Eu2O3-doped Y2O3 phosphors by solvothermal reaction

Eu₂O₃-doped yttrium oxide (3 mol%) [Y₂O₃:Eu(3 mol%)] with wire-like and near-spherical morphologies were prepared by a solvothermal treatment using water, ethanol, ethylene glycol and glycerol as reaction media followed by calcination. The powders prepared in water and ethanol possessed wire structure, where the powder treated in water showed high aspect ratio and that in ethanol showed low aspect ratio. The powders prepared in ethylene glycol and glycerol possessed well-dispersed near-spherical powders, which showed almost the same level of photoluminescence emission intensity as that of submicron particles prepared without solvothermal treatment.     

Y2O3:Eu纳米晶中能量传递相互作用的研究

通过浓度猝灭曲线确定了引起Y₂O₃纳米晶中Eu³⁺发光浓度猝灭的是交换相互作用.测量了两种颗粒尺寸下Eu³⁺的⁵D₀—⁷F₂跃迁发光衰减曲线随掺杂浓度的变化,利用交换相互作用的理论衰减曲线对实验衰减曲线进行拟合.计算Eu³⁺离子的交换相互作用能量传递的效率,分析了Y₂O_{3关键词： 能量传递 2}O₃Eu纳米晶')" href="#">Y₂O₃Eu纳米晶 发光衰减     

Structural and optical properties of Er, Yb co-doped Y2O3 thin films

Thin Er³⁺, Yb³⁺ co-doped Y₂O₃ films were grown on (1 0 0) YAG substrates by pulsed laser deposition. Ceramic targets having different active ion concentration were used for ablation. The influence of the rare-earth content and oxygen pressure applied during the deposition on the structural, morphological and optical properties of the films were investigated. The films deposited at the lower pressure, 1 Pa, and at 1/10 Er to Yb doping ratio are highly textured along the (1 1 1) direction of the Y₂O₃ cubic phase. In addition to the crystalline structure, these films possess smoother surface compared to those prepared at the higher pressure, 10 Pa. All other films are polycrystalline, consisting of cubic and monoclinic phases of Y₂O₃. The rougher surface of the films produced at the higher-pressure leads to higher scattering losses and different behavior of the reflectivity spectra. Optical anisotropy in the films of less than 0.004 was measured regardless of the monoclinic structure obtained. Waveguide losses of about 1 dB/cm at 633 nm were obtained for the films produced at the lower oxygen pressure.     

Low thermal quenching and high-efficiency Ce, Tb-co-doped Ca3Sc2Si3O12 green phosphor for white light-emitting diodes

Low thermal quenching and high-efficiency Ca₃Sc₂Si₃O₁₂:Ce³⁺ (CSSO:Ce³⁺) phosphors with co-doping Tb³⁺ ion were prepared by a solid state method and the properties of these phosphors were investigated. The results showed that co-doping of Tb³⁺ not only enhances the photoluminescence remarkably and decreases the thermal quenching of the phosphor, but also heightens the performances of the LEDs fabricated with the phosphor. A high-efficiency and low color temperature white LED was fabricated with the prepared CSSO:1%Ce³⁺, 0.5%Tb³⁺ and a red phosphor, indicating that CSSO:1%Ce³⁺,0.5%Tb³⁺ phosphor is a suitable green phosphor for the fabrication of high-efficiency white LEDs.     

Characterization of Y2O3 gate dielectric on n-GaAs substrates

Physical and electrical properties of sputtered deposited Y₂O₃ films on NH₄OH treated n-GaAs substrate are investigated. The as-deposited films and interfacial layer formation have been analyzed by using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). It is found that directly deposited Y₂O₃ on n-GaAs exhibits excellent electrical properties with low frequency dispersion (<5%), hysteresis voltage (0.24 V), and interface trap density (3 × 10¹² eV⁻¹ cm⁻²). The results show that the deposition of Y₂O₃ on n-GaAs can be an effective way to improve the interface quality by the suppression on native oxides formation, especially arsenic oxide which causes Fermi level pinning at high-k/GaAs interface. The Al/Y₂O₃/n-GaAs stack with an equivalent oxide thickness (EOT) of 2.1 nm shows a leakage current density of 3.6 × 10⁻⁶ A cm⁻² at a V_FB of 1 V. While the low-field leakage current conduction mechanism has been found to be dominated by the Schottky emission, Poole-Frenkel emission takes over at high electric fields. The energy band alignment of Y₂O₃ films on n-GaAs substrate is extracted from detailed XPS measurements. The valence and conduction band offsets at Y₂O₃/n-GaAs interfaces are found to be 2.14 and 2.21 eV, respectively.     

Quantum-chemical ab initio study of the crystal-field and charge transfer energies of nanocrystalline Y2O3: Eu

The 4f energy levels and crystal-field parameters for several clusters representing the local coordination surroundings of Eu³⁺ in the bulk and nanocrystalline cubic Y₂O₃: Eu³⁺ crystals are obtained by using a method based on the combination of the DV-X_α calculation and the effective Hamiltonian method initialized by M.F. Reid et al. (J. Phys.: Condens. Matter, 2011, 23: 045501). The results are in reasonable agreement with the measured energy levels and the crystal-field parameters obtained from the least-square fitting. The charge transfer energies are also obtained for all the clusters from the DV-X_α calculation. The results indicate that, compared with the bulk Y₂O₃: Eu³⁺ crystal, the charge transfer band in the excitation spectra is red-shifted in the nanocrystal.     

Sol-gel derived Y2O3 as an efficient bluish-white phosphor without metal activator ions

In this paper, Y₂O₃ powder phosphors without metal activators were successfully prepared by the sol-gel method. The obtained sample shows an intense bluish-white emission (ranging from 350 to 600 nm, centered at 416 nm) under a wide range of UV light excitation (235-400 nm). The chromaticity coordinates of the sample are x=0.159, y=0.097, and the quantum yield is as high as 64.6%, which is a high value among the phosphor family without metal activators. The luminescent mechanisms have been ascribed to the carbon impurities in the Y₂O₃ host.     

Degradation of Y2SiO5:Ce phosphor powders

The degradation of the cathodoluminescence (CL) intensity of cerium-doped yttrium silicate (Y₂SiO₅:Ce) phosphor powders was investigated for possible application in low voltage field emission displays (FEDs). Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and CL spectroscopy were used to monitor changes in the surface chemical composition and luminous efficiency of commercially available Y₂SiO₅:Ce phosphor powders. The degradation of the CL intensity for the powders is consistent with a well-known electron-stimulated surface chemical reaction (ESSCR) model. It was shown with XPS and CL that the electron stimulated reaction led to the formation of a luminescent silicon dioxide (SiO₂) layer on the surface of the Y₂SiO₅:Ce phosphor powder. XPS also indicated that the Ce concentration in the surface layer increased during the degradation process and the formation of CeO₂ and CeH₃ were also part of the degradation process. The CL intensity first decreased until about 300 C cm⁻² and then increased due to an extra peak arising at a wavelength of 650 nm.     

LaPO4:Ce3+/Tb3+ 纳米线的合成和发光特性

通过水热法合成出Ce^3 和Tb^3 共激活的LaPO4纳米线,并同相应的微米棒进行了比较。研究了其荧光光谱和动力学过程。结果表明纳米线和微米棒的晶体结构均为单斜相。在单掺杂Ce^3 和Tb^3 的材料中,微米棒的发光强度与纳米线相比稍有提高,但在共掺杂的纳米线样品中对应Ce^3 的激发,Tb^3 的^5D4→^7F5绿光发射比微米棒提高了3～5倍。通过动力学研究,纳米线中Ce^3 和Tb^3 的电子跃迁速率与微米棒对比没有显著的提高,且Ce^3 →Tb^3 的能量传递速率降低了3倍。Tb^3 的^53能级衰减包括两个过程：快过程和慢过程。纳米线以慢过程为主,而微米棒以快过程为主。我们认为慢过程对应^5D3→^5D4的弛豫,快过程对应^5D3向其他缺陷能级的跃迁。因此共掺杂纳米线中强度的提高被归因于在纳米线中更多的边界阻碍而引起在高于^5D4的激发态能级上损失的能量更少。