SrS:Ce/ZnS:Mn-A di-band phosphor for near-UV and blue LED-converted white-light emitting diodes

The SrS:Ce/ZnS:Mn phosphor blends with various combination viz 75:25, 50:50 and 25:75 were assign to generate the white-light emission using near-UV and blue-light emitting diodes (LED) as an excitation source. The SrS:Ce exhibits strong absorption at 427 nm and the corresponding intense emission occurs at 480 and 540 nm due to electron transition from 5d(²D)−4f(²F_5/2, _7/2) of Ce³⁺ ion as a result of spin-orbit coupling. The ZnS:Mn excited under same wavelength shows broad emission band with λ_max=582 nm originates due to 3d (⁴G−⁶S) level of Mn²⁺. Photoluminescence studies of phosphor blend excited using near-UV to blue light confirms the emitted radiation varies from cool to warm white light in the range 430-600 nm, applicable to LED lightings. The CIE chromaticity coordinate values measured using SrS:Ce/ZnS:Mn phosphor blend-coated 430 nm LED pumped phosphors in the ratio 75:25, 50:50 and 25:75 are found to be (0.235, 0.125), (0.280, 0.190) and (0.285, 0.250), respectively.     

Photophysical and photoluminescence properties of co-activated ZnS:Cu,Mn phosphors

ZnS:Cu,Mn phosphors were prepared by conventional solid state reaction with the aid of NaCl-MgCl₂ flux at 900 °C. The samples were characterized by X-ray powder diffraction, UV-vis absorbance spectra and photoluminescence spectra. All samples possess cubic structure. Cu has a much stronger effect on the absorption property of ZnS than Mn. Incorporation of Mn into ZnS host only slightly enhances the light absorption, while addition of Cu remarkably increases the ability of absorption due to ground state Cu⁺ absorption. The emission spectra of the ZnS:Cu,Mn phosphors consist of three bands centered at about 452, 520 and 580 nm, respectively. Introduction of Mn significantly quenches the green luminescence of ZnS:Cu. The excitation energy absorbed by Cu is efficiently transferred to Mn activators non-radiatively and the Mn luminescence can be sensitized by Cu behaving as a sensitizer (energy donor).     

A novel blue magnesium strontium aluminate-based phosphor for PDP application

A novel blue light-emitting phosphor, Eu²⁺-doped magnesium strontium aluminate (MgSrAl₁₀O₁₇:Eu²⁺), for plasma display panel (PDP) application was developed. X-ray diffraction (XRD) patterns disclosed that the phosphor annealed at 1500 °C for 5 h was a pure MgSrAl₁₀O₁₇ phase. Field emission scanning electron microscopy (FE-SEM) images showed the particle size of the phosphor was less than 3 μm. The phosphor shows strong and broad blue emission under vacuum ultraviolet (VUV) light excitation. After baking at 400-600 °C and irradiation with VUV light for 300 h, the phosphor still keep excellent VUV luminescence properties exhibiting good stability against high temperature baking and VUV irradiation. The decay time was short as 1.09 μs and the quantum yield was high to 0.77±0.02. All the characteristics indicated that MgSrAl₁₀O₁₇:Eu²⁺ would be a promising blue phosphor for PDP application.     

Characterization and luminescent properties of SiO2:ZnS:Mn and ZnS:Mn nanophosphors synthesized by a sol-gel method

ZnS and SiO₂-ZnS nanophosphors, with or without different concentration of Mn²⁺ activator ions, were synthesized by using a sol-gel method. Dried gels were annealed at 600 °C for 2 h. Structure, morphology and particle sizes of the samples were determined by using X-ray diffraction (XRD), highresolution transmission electron microscopy (HRTEM) and field emission scanning electron microscopy (FESEM). The diffraction peaks associated with the zincblende and the wurtzite structures of ZnS were detected from as prepared ZnS powders and additional diffraction peaks associated with ZnO were detected from the annealed powders. The particle sizes of the ZnS powders were shown to increase from 3 to 50 nm when the powders were annealed at 600 °C. An UV-Vis spectrophotometer and a 325 nm He-Cd laser were used to investigate luminescent properties of the samples in air at room temperature. The bandgap of ZnS nanoparticles estimated from the UV-Vis data was 4.1 eV. Enhanced orange photoluminescence (PL) associated with ⁴T₁→⁶A₁ transitions of Mn²⁺ was observed from as prepared ZnS:Mn²⁺and SiO₂-ZnS:Mn²⁺ powders at 600 nm when the concentration of Mn²⁺ was varied from 2-20 mol%. This emission was suppressed when the powders were annealed at 600 °C resulting in two emission peaks at 450 and 560 nm, which can be ascribed to defects emission in SiO₂ and ZnO respectively. The mechanism of light emission from Mn²⁺, the effect of varying the concentration on the PL intensity, and the effect of annealing are discussed.     

A new blue-emitting phosphor, SrZnO2:Pb, synthesized by the adipic acid templated sol-gel route

A new blue-emitting phosphor, Sr_1−xPb_xZnO₂, was prepared by a novel adipic acid templated sol-gel route. Photoluminescence and crystalline properties were investigated as functions of calcination temperatures and the Pb²⁺ doping levels. It was found that under UV excitation with a wavelength of 283 or 317 nm, the phosphors gave emission from 374 to 615 nm with a peak centered at 451 nm. This broad-band was composed of UV and the visible range was attributed to an impurity-trapped exciton-type emission. The maximum emission intensity of the Sr_1−xPb_xZnO₂ phosphors occurred at a Pb concentration of x=0.01. The decay time was observed to be ∼33 ms for the compound doped with 1 mol% Pb prepared at 1000 °C. Diffuse reflectance spectra revealed the characteristic absorption peaks and the bandgap energy of SrZnO₂ was found to be 3.4 eV. SEM analysis indicated that phosphor particles have an irregularly rounded morphology and the average particle size was found to be approximately 1 μm.     

Color tunability of nanophosphors by changing cations for solid-state lighting

X₃MgSi₂O₈: Eu²⁺, Mn²⁺ (X=Ba, Sr, Ca) phosphors with the mean particle size of 200 nm and the spherical shape are synthesized through combustion method. They show three emission colors under near-ultraviolet light: the blue and green colors from Eu²⁺ ions and the red color from Mn²⁺ ions. Three emission bands show the different emission colors with changing X²⁺ cations. These color shifts are discussed in terms of two competing factors of the crystal field strength and the covalency. These phosphors with maximum excitation of around 375 nm can be applied as color-tunable phosphors for white-light-emitting diode based on ultraviolet/phosphor technology.     

Charge compensation on the luminescence properties of ZnWO4:Tb phosphors via hydrothermal synthesis

A phosphor Tb³⁺-doped ZnWO₄ (ZWO:Tb) phosphors were prepared by a hydrothermal method. X-ray powder diffraction (XRD) analysis revealed that the as-obtained sample is pure ZnWO₄ phase. The excitation and emission spectra indicated that the phosphor could be well excited by ultraviolet light (272 nm) and emit blue light at about 491 nm and green light at about 545 nm. Significant energy transfer from WO₄²⁻ groups to Tb³⁺ ions has been observed. Two approaches to charge compensation are investigated: (a) 2Zn²⁺ = Tb³⁺ + M⁺, where M⁺ is a monovalent cation like Li⁺, Na⁺ and K⁺ acting as a charge compensator; (b) 3Zn²⁺ = 2Tb³⁺ + vacancy. Compared with two charge compensation patterns in the ZnWO₄:Tb³⁺, it has been found that ZnWO₄:Tb³⁺ phosphors used Li⁺ as charge compensation show greatly enhanced bluish-green emission under 272 nm excitation.     

Synthesis and fluorescence properties of pure and metal-doped spherical ZnS particles from EDTA-metal complexes

Monodispersed spherical ZnS particles as well as doped with Cu, Mn ions were synthesized from metal-chelate solutions of ethylenediamine tetraacetate (EDTA) and thioacetamide (TAA). The characterizations of the ZnS-based particles were investigated via TEM, SEM, XRD, TG/DTA and PL measurements. The sphere size was controlled from 50 nm to 1 μm by adjusting the nucleation temperatures and molar ratio of Zn-EDTA to TAA. The emission intensity continuously increased with the increase of the particle size. When the ZnS microspheres were annealed at 550-800 °C, there were two specific emission bands with the centers at 454 nm and 510 nm, which were associated with the trapped luminescence arising from the surface states and the stoichiometric vacancies, respectively. When Cu²⁺ was introduced into ZnS microspheres, the dominant emission was red-shifted from 454 to 508 nm, fluorescence intensity also sharply increased. However, for the Mn²⁺-doped ZnS, the emission intensity was significantly enhanced without the shift of emission site.     

Preserving long-term emission stability of carbon nanotube field emitter using aluminum layer

Carbon nanotube (CNT) field emitter was fabricated, and then its emission stability was evaluated with three different anode structures; indium tin oxide (ITO)/glass, ZnS:Cu,Al(green phosphor)/ITO/glass, and Al/ZnS:Cu,Al/ITO/glass. It was found that the electron emission from CNTs to the phosphor layer degrades much faster than the emission to ITO layer does. The current decay time from 100 μA/cm² to 50 μA/cm² for ITO/glass and ZnS:Cu,Al/ITO/glass were 250 h and 20 h, respectively. Such rapid decay in emission current with the phosphor-coated anode was found to be attributed to the formation of Zn particles on CNTs during the field emission. However, the deposition of aluminum layer on the phosphor, in other words, using the anode structure of Al/ZnS:Cu,Al/ITO/glass recovered the stability that is comparable to that with an ITO/glass. The aluminum layer was found to efficiently prevent phosphor elements from being degassed, preserving the long-term emission stability of carbon nanotubes.     

Characteristic properties of Y2SiO5:Ce thin films grown with PLD

Three different gases (nitrogen (N₂), oxygen (O₂) and argon (Ar)) were used as background gases during the growth of pulsed laser deposition (PLD) Y₂SiO₅:Ce thin films. A Krypton fluoride laser (KrF), 248 nm was used for the PLD of the films on silicon (Si) (1 0 0) substrates. The effect of the background gases on the surface morphology, crystal growth and luminescent properties were investigated. All the experimental parameters, the gas pressure (455 mT), the substrate temperature (600 °C), the pulse frequency (8 Hz), the number of pulses (4000) and the laser fluence (1.6±0.2) J/cm² were kept constant. The only parameter that was changed during the deposition was the ambient gas species. The surface morphology and average particle sizes were monitored with scanning electron microscopy (SEM) and atomic force microscopy (AFM). X-ray diffraction (XRD) and Auger electron spectroscopy (AES) were used to determine the crystal structure and composition, respectively. Cathodo- (CL) and photoluminescence (PL) were used to measure the luminescent intensities for the different phosphor thin films. The nature of the particles, ablated on the substrate, is related to the collisions between the ejected particles and the ambient gas particles. The CL and PL intensities also depend on the particle sizes. A 144 h (coulomb dose of 1.4×10⁴ C cm⁻²) electron degradation study on the thin films ablated in the Ar gas environment resulted in a decrease in the main CL intensity peak at 440 nm and to the development of a new very broad luminescent peak spectra ranging from 400 to 850 nm due to the growth of a SiO₂ layer on the surface.     

Photoluminescence studies of red-emitting NaEu(WO4)2 as a near-UV or blue convertible phosphor

Sodium europium double tungstate [NaEu(WO₄)₂] phosphor was prepared by the solid-state reaction method. Its crystal structure, photoluminescence properties and thermal quenching characteristics were investigated aiming at the potential application in the field of white light-emitting diodes (LEDs). The influences of Sm doping on the photoluminescence properties of this phosphor were also studied. It is found that this phosphor can be effectively excited by 394 or 464 nm light, which nicely match the output wavelengths of near-ultraviolet (UV) or blue LED chips. Under 394 or 464 nm light excitation, this phosphor exhibits stronger emission intensity than the Y₂O₂S:Eu³⁺ or Eu²⁺-activated sulfide phosphor. The introduction of Sm³⁺ ions can broaden the excitation peaks at 394 and 464 nm of the NaEu(WO₄)₂ phosphor and significantly enhance its relative luminance under 400 and 460 nm LEDs excitation. Furthermore, the relative luminance of NaEu(WO₄)₂ phosphor shows a superior thermal stability compared with the commercially used sulfide or oxysulfide phosphor, and make it a promising red phosphor for solid-state lighting devices based on near-UV or blue LED chips.     

Luminescence properties of a new Mn-activated red long-afterglow phosphor

A new phosphor, CaZnGe₂O₆:Mn²⁺, which emits red long-lasting phosphorescence centered at 648 nm upon UV light excitation, is prepared by the conventional high-temperature solid-state method and its luminescent properties are systematically investigated in this paper. XRD, photoluminescence, thermoluminescence spectra and afterglow decay curve are used to characterize the synthesized phosphor. This phosphor is well crystallized by calcination at 1150 °C for 3 h and possesses excellent performance. The color coordinate values of this phosphor are x=0.64, y=0.26 under 250 nm UV light excitation. Under 250-nm UV light irradiation, this phosphor shows obvious long-lasting phosphorescence that can be seen with the naked eye in the dark clearly after the irradiation source has been removed for more than 3 h. The possible mechanism of this red-light-emitting long-afterglow phosphor is also investigated based on the experiment results.     

Preparation, characterization and study of optical properties of ZnS nanophosphor

In this work the preparation, characterization and photoluminescence studies of pure and copper-doped ZnS nanophosphors are reported, which are prepared by using solid-state reaction technique at a temperature of 100 °C. The as-obtained samples were characterized by X-ray diffraction (XRD) and UV-VIS Reflectance spectroscopy. The XRD analysis confirms the formation of cubic phase of undoped as well as Cu²⁺-doped ZnS nanoparticles. Furthermore it shows that the average size of pure as well as copper-doped samples ranges from 15 to 50 nm. The room-temperature PL spectra of the undoped ZnS sample showed two main peaks centered at around 421 and 450 nm, which are the characteristic emissions of interstitial zinc and sulfur vacancies, respectively. The PL of the doped sample showed a broad-band emission spectrum centered at 465 nm accompanied with shoulders at around 425, 450 and 510 nm, which are the characteristic emission peaks of interstitial zinc, sulfur vacancies and Cu²⁺ ions, respectively. Our experimental results indicate that the PL spectrum confirms the presence of Cu²⁺ ions in the ZnS nanoparticles as expected.     

Bright electrophosphorescent devices based on sterically hindered spacer-containing Cu(I) complex

A Cu(I) complex, [Cu(Dppp)(DPEphos)]BF₄ (Dppp=2,3-diphenyl-pyrazino[2,3-f][1,10]phenanthroline, DPEphos=Bis[2-(diphenylphosphino)phenyl]ether), is synthesized and used as the dopant in bright electrophosphorescent devices with the general structure ITO/m-MTDATA (30 nm)/NPB (20 nm)/CBP: ×wt% [Cu(Dppp)(DPEphos)]BF₄ (30 nm)/Bphen (20 nm)/Alq₃ (20 nm)/LiF (0.8 nm)/ Al (200 nm). These devices exhibit a maximum brightness of 4483 cd/m² and a peak efficiency of 3.4 cd/A. Compared with previously reported similar devices based on Cu(I) complexes, the brightness of the devices presented in this article is the best. Meanwhile, 2% [Cu(Dppp)(DPEphos)]BF₄-based devices exhibit white light-emitting properties with CIE coordinates of (0.32. 0.35) at 10 V.     

Blue-emitting long-lasting phosphor, Sr3Al10SiO20:Eu,Ho

A novel blue-emitting long-lasting phosphor Sr₃Al₁₀SiO₂₀:Eu²⁺,Ho³⁺ is prepared by the conventional high-temperature solid-state technique and their luminescent properties are investigated. XRD, photoluminescence (PL) and thermoluminescence (TL) are used to characterize the synthesized phosphors. These phosphors are well crystallized by calcinations at 1500-1600 °C for 3 h. The phosphor emits blue light and shows long-lasting phosphorescence after it is excited with 254/365 nm ultraviolet light. TL curves reveal the introduction of Ho³⁺ ions into the Sr₃Al₁₀SiO₂₀:Eu²⁺ host produces a highly dense trap level at appropriate depth, which is the origin of the long-lasting phosphorescence in this kind of material. The long-lasting phosphorescence lasts for nearly 6 h in the light perception of the dark-adapted human eye (0.32 mcd/m²). All the results indicate that this phosphor has promising potential practical applications.     

Enhancement of photoluminescence of ZnS:Mn nanocrystals modified by surfactants with phosphate or carboxyl groups via a reverse micelle method

A colloidal suspension of ZnS:Mn nanocrystals was prepared in sodium bis(2-ethylhexyl)suflosuccinate reverse micelles, and then modified by surfactants with phosphate or carboxyl groups. The photoluminescent intensity at 580 nm due to d-d transition of Mn²⁺ ions increases up to a factor of 6.3 and its quantum efficiency increases from 1.7% to 8.1% after modification. According to ³¹P nuclear magnetic resonance spectra, surfactants with phosphate groups adsorb on the surface of ZnS nanocrystal and ³¹P nucleus spins are relaxed rapidly by interaction with five unpaired 3d electrons of Mn²⁺, showing that phosphate groups are located in the vicinity of Mn²⁺. The excitation spectra for the emission due to phosphate or carboxyl groups are similar to those for the emission at 580 nm corresponding to the excitation of ZnS. Both excitation spectra shift in parallel with increasing the amount of surfactant to show the linear relationship. We, therefore, attribute the increase in quantum efficiency at 580 nm to additional energy transfer of ZnS→functional groups→Mn²⁺ as well as to the reduction of energy loss due to non-radiative transition by surface modification.     

High luminance of new green emitting phosphor, Mg2SnO4:Mn

Mg₂SnO₄, which has an inverse spinel structure, was adopted as the host material of a new green emitting phosphor. Luminescence properties of the manganese-doped magnesium tin oxide prepared by the solid state reaction were investigated under vacuum ultraviolet (VUV) ray and low-voltage electron excitation. The Mg₂SnO₄:Mn phosphor exhibited green luminescence with the emission spectrum centered at 500 nm due to spin flip transition of the d-orbital electron associated with the Mn²⁺ ion. Optimum Mn concentration of Mg₂SnO₄:Mn under VUV excitation with 147 nm wavelength and electron beam excitation with 800 V excitation voltage are 0.25 and 0.6 mol%, respectively. The emission intensities of Mg₂SnO₄:Mn phosphors under the two excitation sources are higher than those of Zn₂SiO₄:Mn and ZnGa₂O₄:Mn phosphors. At 0.25 mol% of Mn concentration, on the other hand, the decay time is shorter than 10 ms.     

Blue luminescence of nanocrystalline PbWO4 phosphor synthesized via a citrate complex route assisted by microwave irradiation

Nanocrystalline PbWO₄ phosphor powders, which have scheelite structure, were successfully synthesized at low temperatures via a modified citrate complex route assisted by microwave irradiation. Crystallization of the PbWO₄ precursor were detected at 400 °C, and entirely completed at 500 °C. Prepared PbWO₄ nanocrystallites showed primarily spherical and disperse morphology. The average crystallite sizes were between 18 and 29 nm, showing an ordinary tendency to increase with temperature. The nanocrytalline PbWO₄ phosphor powders exhibited spread-eagle shape of blue luminescence. Especially the PbWO₄ phosphor powders prepared at 600 °C showed the strongest luminescent intensity, which was due to the higher crystallinity and homogeneous particle morphology.     

Fabrication of Al nanoparticles and their electrical properties studied by capacitance-voltage measurements

Nanometer-scale Al particles are fabricated and are embedded in a GaAs matrix using molecular beam epitaxial technique. The Al particle is self-assembled on GaAs by supplying an Al molecular beam. The average particle size is found to be 25 nm. The density is 7 × 10¹⁰ cm⁻² when Al of 6.2 × 10¹⁵ atoms/cm² is supplied on (1 0 0)GaAs at a substrate temperature of 300 °C. Clear hysteresis and plateaus in capacitance-voltage (C-V) curves are found in an Al-embedded sample, whereas monotonic increase of capacitance is obtained in a reference sample having an AlAs layer instead of Al. This difference results from trapping of electrons by the Al particles, suggesting that the particles have metallic character.     

Optical and structural properties of nanosized ZnGa2O4:Cr phosphor

Nanosized ZnGa₂O₄:Cr³⁺ powder is synthesized through hydrothermal method. The average particle size is 20 nm and they are spherical in shape. The excitation band from the charge transfer between Cr³⁺-O²⁻ shows a blueshift behavior due to quantum confinement effect. X-ray diffraction pattern, Fourier transform-infrared spectrum, and electron paramagnetic resonance signal indicate that nanosized ZnGa₂O₄:Cr³⁺ phosphor shows many defect-related energy states and heavy lattice distortion in comparison with bulk ZnGa₂O₄:Cr³⁺ phosphor. Many defect states result in more nonradiative loss and shorter decay time.