Passively Q-switched yellow laser formed by a self-Raman composite Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> crystal

Passively Q-switched yellow output from a frequency-doubled self-stimulating Raman composite Nd:YVO₄/YVO₄ laser using a Cr:YAG saturable absorber is reported. Maximum yellow output power of 264 mW was obtained with corresponding diode to yellow conversion efficiency of 5.9%.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

Timing-jitter reduced high-repetition-rate Q-switched Nd:YVO<Subscript>4</Subscript>/Cr<Superscript>4+</Superscript>:YAG micro laser with low pump power

We report a high repetition rate Q-switched Nd:YVO₄/Cr⁴⁺:YAG micro laser with small pump power. Unwanted defects in pulse train, which are inherently large in passively Q-switched laser, was simply minimized by controlling temperature of Nd:YVO₄/Cr⁴⁺:YAG medium. When T ₀ = 90% Cr⁴⁺:YAG and R _OC = 90% output coupler were used, Q-switched Nd:YVO₄/Cr⁴⁺:YAG micro laser showed the optimum output; maximum output power of 58 mW, optical-to-optical efficiency of 9.1%, repetition rate of 1.1 MHz, and pulse width of 57 ns were achieved with 640 mW pumping. MHz-order repetition rate in Nd:YVO₄/Cr⁴⁺:YAG Q-switched laser with low pumping (<1 W) is the highest value to the best of our knowledge.     

LD-pumped passively Q-switched Nd:YVO4/YVO4 laser with an Nd3+:Cr4+:YAG saturable absorber

By using a piece of codoped Nd³⁺:Cr⁴⁺:YAG crystal as a saturable absorber, a laser-diode pumped passively Q-switched Nd:YVO₄/YVO₄ laser has been realized. The maximum laser output power of 2.452 W has been obtained at the incident pump power of 8.9 W for an 8.8% transmission of the output coupler at 1064 nm, corresponding to a slope efficiency of 30%. The other output laser characteristics of the laser have also been investigated. The laser with a Nd³⁺:Cr⁴⁺:YAG saturable absorber has a lower threshold pump power and a higher slope efficiency compared to that with a similar small-signal transmission of a Cr⁴⁺:YAG saturable absorber.     

Efficient and high-power laser-diode single-end-pumped Nd：YVO4 continuous wave laser at 1342nm

A compact, efficient and high-power laser diode （LD） single-end-pumped Nd：YVO4 laser with continuous-wave emission at 1342 nm is reported. With a single crystal single-end-pumped by fibre-coupled LD array, an output power of 7.36W is obtained from the laser cavity of concave-convex shape, corresponding to an optical-to-optical efficiency of 32.8%. The laser is operated in TEM00 mode with small rms amplitude noise of 0.3%. The influences of the Nd concentration, transmissivity of the output mirror and the cavity length on the output power have been studied experimentally.     

The thermal effect in diode-end-pumped continuous-wave 914-nm Nd:YVO4 laser

The thermal effect and the heat generation in diode-end-pumped continuous-wave 914-nm Nd:YVO₄ lasers are investigated in detail. A theoretical model of a diode end-pumped solid-state laser is constructed to analyse the influence of fractional thermal loading on the thermal effect in the Nd:YVO₄ laser based on finite element analysis. The thermal focal lengths and the end-surface deformations of laser rods in Nd:YVO₄ quasi-three-level and four-level lasers are measured and compared with the results obtained by ordinary interferometry for the demonstration of higher thermal loading in 914-nm laser. Finally the fractional thermal loading in the Nd:YVO₄ quasi-three-level laser is calculated by matching the experimental and the simulated end deformations.     

Laser-diode-pumped Nd:YVO<Subscript>4</Subscript>/Nd:YAG MOPA burst-mode laser

We report a high-repetition-rate, high-peak-power laser diode (LD) pumped burst-mode 1064 nm laser from a Nd:YVO₄/Nd:YAG master oscillator power amplifier. 10–100 kHz pulse burst in a duration up to 2 ms is achieved in LD end-pumped Nd:YVO₄ acousto-optically Q-switched laser. After amplification with LD side-pumped Nd:YAG rod amplifiers, the single pulse energy reaches 73 mJ in 10 kHz pulse burst laser with a peak power of 7.8 MW.     

An Intracavity-Triggered Passively-Switched Nd:YVO<Subscript>4</Subscript> Laser

We demonstrate an intracavity-triggered passively Q-switched Nd:YVO₄ laser within a diode-end-pumped configuration. We employ a Cr⁴⁺:YAG saturable absorber as the passive Q switch and an Nd:LiYF₄ (YLF) laser as the laser triggering of the Q-switched laser. Since we use the same Cr⁴⁺:YAG crystal and output coupler with the Nd:YVO₄ laser, the Cr⁴⁺:YAG Q switch is triggered inside the Nd:YLF laser cavity. As a result, the timing jitter in standard deviation of Nd:YVO₄ laser can be reduced to 16 ns.     

Passively Q-switched <Emphasis Type="Italic">a</Emphasis>-cut Nd:YVO<Subscript>4</Subscript> self-Raman laser

A passively Q-switched a-cut Nd:YVO₄ self-stimulating Raman laser using a Cr:YAG saturable absorber has been demonstrated for the first time. The maximum average output power of the self-Raman laser at 1176 nm is 347 mW at the incident pump power of 10 W with a pulse repetition frequency (PRF) of 66 kHz. The pulse width, pulse energy of the 1176 nm are found to be 10 ns and 5.6 μJ. The conversion efficiency from diode laser input power to Raman output power is 3.47%.     

A compact efficient continuous-wave self-frequency Raman laser with a composite YVO4/Nd:YVO4/YVO4 crystal

We report a low-threshold continuous-wave self-Raman laser with a composite YVO₄/Nd:YVO₄/YVO₄ crystal. The use of the composite crystal can reduce the thermal effects and achieve the low-threshold and high Raman output operation. The Raman threshold is as low as 2.2 W for the 808-nm diode pump. Under the pump of a diode power of 25.5 W, the highest Raman output of 2.8 W is obtained at 1175 nm, corresponding to a slope efficiency of 12% and a diode-to-Stokes optical conversion efficiency of 11%. The power fluctuation is less than 1.1% under the highest Raman output.     

Investigation of Nd:YVO4/YVO4 composite crystal and its laser performance pumped by a fiber coupled diode laser

Thermal effect control is critical to scale the output power of diode end-pumping solid lasers to several watts up and beyond. Diffusion bonding crystal has been demonstrated to be an effective method to relieve the thermal lens for the end-pumping laser crystal. The temperature distribution and thermal lens in Nd:YVO₄/YVO₄ composite crystal was numerically analyzed and compared with that of Nd:YVO4 crystal in this paper. The end-pumping Nd:YVO₄/YVO₄ composite crystal laser was set up and tested with z cavity. The maximum output power of 9.87 W at 1064 nm and 6.14 W at 532 nm were obtained at the pumping power of 16.5 W. The highest optical-optical conversion efficiencies were up to 60% at 1064 nm and 40% at 532 nm, respectively.     

Theoretical analysis and experimental research on thermal focal length of a YVO4/Nd:YVO4 composite crystal

This paper investigates the temperature field distribution and thermal focal length within a laser diode array (LDA) end-pumped YVO4/Nd:YVO4 rectangular composite crystal. A general expression of the temperature field distribution within the Nd:YVO4 rectangular crystal was obtained by analysing the characteristics of the Nd:YVO4 crystal and solving the Poisson equation with boundary conditions. The temperature field distributions in the Nd:YVO4 rectangular crystal for the YVO4/Nd:YVO4 composite crystal and the Nd:YVO4 single crystal are researched respec- tively. Calculating the thermal focal length within the Nd:YVO4 rectangular crystal was done by an analysis of the additional optical path differences (OPD) caused by heat, which was very identical with experimental results in this paper. Research results show that the maximum relative temperature on the rear face of the Nd:YVO4 crystal in the composite crystal is 150 K and the thermal focal length is 35.7 mm when the output power of the LDA is 22 W. In the same circumstances, the experimental value of the thermal focal length is 37.4 mm. So the relative error between the theoretical analysis and the experimental result is only 4.5%. With the same conditions, the thermal focal length of the Nd:YVO4 single crystal is 18.5 mm. So the relative rate of the thermal focal length between the YVO4/Nd:YVO4 crystal and the Nd:YVO4 crystal is 93%. So, the thermal stability of the output power and the beam quality of the YVO4/Nd:YVO4 laser is more advantageous than the laser with Nd:YVO4 single crystal.     

Single-longitudinal mode Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript>/KTP green solid state laser

We present the concept and practical realization of a single frequency, tuneable diode pumped Nd:YVO₄/YVO₄/KTP microchip laser operating at 532 nm. Theoretical analysis of the single mode operation of such a laser configuration is presented. The single frequency operation has been obtained in a birefringent filter, where an YVO₄ beam displacer acts as an ideal polarizer. Experimental results are in good agreement with theoretical analysis. We have obtained stable single frequency operation, tuneable over 0.6 nm in the spectral range around 1064 nm. The laser operated with output power up to 110 mW at 53 nm. The total optical efficiency (808 nm to 532 nm) was 14%.     

Operational characteristics of dual gain single cavity Nd:YVO4 laser

Operational characteristics of a dual gain single cavity Nd:YVO₄ laser have been investigated. With semiconductor diode laser pump power of 2 W, 800 mW output was obtained with a slope efficiency of 49%. Further, by changing the relative orientation of the two crystals the polarization characteristics of the output could be varied. In particular by keeping the two Nd:YVO₄ crystals with their c-axes orthogonal to each other and adjusting the gain of the crystals so that both operate at approximately the same power level, completely unpolarized beams could be obtained.     

Continuous-wave 560 nm light generated by intracavity SrWO4 Raman and KTP sum-frequency mixing

An LD end-pumped Nd:YAG/SrWO₄ continuous-wave 560 nm laser is presented based on intracavity sum-frequency mixing of the fundamental and first-Strokes light. The maximum output power of 330 mW at 559.6 nm was obtained for the diode pump power of 13.7 W and the conversion efficiency was about 2.5%. The intense blue emission was also observed in the SrWO₄ crystal when the Raman laser was operating above threshold. This blue emission is centered at 473 nm, which also happened to YVO₄.     

A high polarization microchip green laser with dual Nd:YVO4 crystal

A high polarization Nd:YVO₄/KTP laser with dual crossed gain crystal is reported. Using two optical axis orthogonal Nd:YVO₄ crystal as gain medium, eliminating the depolarization effect of single Nd:YVO₄ crystal, the high polarization green laser is obtained. With 1.8 W diode laser pump power the output power of TEM₀₀ green laser is 366 mW, the light–light conversion efficiency is up to 20.3%, and the polarization ratio is 110:1. This laser has the advantages of being simple and easily attainable at a low cost, and it is suitable for batch production.     

Quasi-three-level Nd:YVO<Subscript>4</Subscript> laser operation at 914 nm under 879 nm diode laser pumping

We present experimental investigation on quasi-three-level Nd:YVO₄ laser operation at 914 nm under 879 nm diode pumping directly into emitting level. A maximal output power of 3.0 W under an absorbed pump power of 13.4 W was got, corresponding to an optical conversion efficiency of 22.4% and a slope efficiency of 40.3%. To the best of our knowledge, this is the first report on a Nd:YVO₄ laser at 914 nm using rod-type single crystal as the gain medium and end pumped by diode directly into the emitting level.     

Influence of the laser-diode temperature on crystal absorption and output power in an end-pumped Nd:YVO<Subscript>4</Subscript> laser

In this work, we studied the influence of heat loaded into the laser crystal in an end-pumped solid-state Nd:YVO₄ high power laser. We have shown experimentally that the optimum value of the laser-diode temperature for the maximum pump power absorption by the Nd:YVO₄ crystal and the maximum Nd:YVO₄ laser output power are approximately similar to that of a system of the low power type, but by increasing the pump power, different values can be obtained.     

Transverse mode locking of Stokes radiation in diode end-pumped Nd:YVO<Subscript>4</Subscript> laser passively Q-switched by Cr<Superscript>4+</Superscript>:YAG

Transverse mode locking of the Stokes component generated in the mode of stimulated Raman scattering self-conversion by a pulsed diode end-pumped Nd:YVO₄/Cr:YAG laser is implemented for the first time under conditions of frequency degeneracy of cavity modes.     

Efficient continuous-wave YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript> Raman laser at 1176 nm

We present a simple and compact continuous-wave (CW) 1176 nm laser based on self-frequency Raman conversion in continuous-grown YVO₄/Nd:YVO₄ composite crystal. With a composite crystal 30 mm in length, a maximum output power up to 1.84 W was achieved at the incident diode pump power of 23.6 W. Corresponding to overall optical conversion, the efficiency was 7.8% and the slope efficiency was 8.5%. The conversion efficiency has been doubled compared with the conventional Nd:YVO₄ CW self-frequency Raman laser. The excellent performance of this laser shows that the long continuous-grown YVO₄/Nd:YVO₄ composite crystal is promising in the application of CW Raman lasers and ideal for miniaturization.