Ultra-strong coupling effects with quantum metamaterials

We study a semiconductor-based quantum metamaterial which has the optical characteristics of a metal in two directions, but behaves like a collection of artificial atoms, whose properties can be designed-in using quantum theory, in the third. We find that it supports a type of guided collective plasma resonance (CPR) mode which exhibits efficient optical coupling and long propagation distances. Furthermore, the coupling of the CPR mode with the ‘artificial atom’ transition leads to a case of “Ultra-Strong-Coupling”, demonstrated by a record vacuum Rabi splitting of 65 meV, a sizable fraction (42%), of the bare intersubband energy.     

One-dimensional surface-plasmon gratings for the excitation of intersubband polaritons in suspended membranes

We present the observation of the strong light-matter coupling regime between intersubband transitions of semiconductor quantum wells and the plasmonic-like resonances of a one dimensional metallic grating. Polariton spectra have been recorded in transmission employing a suspended membrane sample and are consistent with theoretical calculations. This arrangement, avoiding the complexity of dispersive substrate, is particularly attractive for the development of time-resolved pump-probe experiments.     

Resonance structure of dynamic fractional Stark ladders in laser-driven biased superlattices

The resonance structure of an electronic Floquet state in a dynamic fractional Stark ladder (DFSL) is examined based on the scattering theory applied to a dressed potential resulting from renormalization of a laser-electron interaction to an original potential. Here, the DFSL is realized in laser-driven biased superlattices with a fractional matching ratio of a Bloch frequency to a laser frequency. It is revealed that, in contrast to a conventional understanding, the DFSL resonance position and lifetime tend to redshift and shorten, respectively, with an increase in strength of the laser field, and further, these show irregular changes in a limited region of the strength. The underlying physics is discussed in detail.     

Nonlinear optical properties of an off-center donor in a quantum dot under applied magnetic field

The nonlinear optical properties of an off-center hydrogenic donor in a two-dimensional quantum dot under applied magnetic field are investigated in detail by using the matrix diagonalization method. Based on the computed energies and wave functions, the linear, third-order and total optical absorption coefficients as well as the refractive index changes have been examined between the ground state (L=0) and the first excited state (L=1). The results show that the ion position, the applied magnetic field, the confinement frequency, and the incident optical intensity have an important influence on the nonlinear optical properties of off-center donors.     

The theory of cylindrical photonic wires

The energy modes for a photonic nanowire have been studied and calculated. We model our photonic crystals after Noda et al. (1999) [18] where logs of semiconductor material are stacked to produce photonic band gaps in both the near and far infrared regions. A nominal dispersion relation was adopted in order to achieve qualitatively useful results. Photonic wires were modeled in two schemes, each with two specific geometries. In the first scheme, a pillar of one photonic crystal is embedded in a larger photonic crystal to produce a wire. This pillar was modeled as having either a square or a circular cross-section. The photonic crystals considered consisted of varying proportions of Ga_xAl_1−xAs, so that the wire could be adjusted. The second scheme investigated was a dielectric material for the central pillar, rather than a photonic crystal. Again, circular and square cross sections were considered. It was found that many more modes fit into the near infrared band gap than the far infrared band gap, and that a circular cross-section permits fewer modes. Finally, a dielectric pillar allows for a wire which is physically much smaller than a wire with a photonic crystal in the middle. As many photonic devices include such wires, these qualitative results could be useful in their design.     

Intersubband optical absorption coefficients and refractive index changes in modulation-doped asymmetric double quantum well

The linear and the third-order nonlinear optical absorption coefficients and refractive index changes in a modulation-doped asymmetric double quantum well are studied theoretically. The electron energy levels and the envelope wave functions in this structure are calculated by the Schrödinger and Poisson equations self-consistently in the effective mass approximation. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. In this regard, the linear, nonlinear and total intersubband absorption coefficients and refractive index changes are investigated as a function of right-well width (Lw₂) of asymmetric double quantum well. Our results show that the total absorption coefficients and refractive index changes shift toward higher energies as the right-well width decreases. In addition, the total optical absorption coefficients and refractive index changes is strongly dependent on the incident optical intensity.     

Optical properties of InGaN/GaN double quantum wells with varying well thickness

The optical properties and recombination kinetics of the InGaN/GaN double quantum well (DQW) structures with different well thickness (L_w) have been studied by means of photoluminescence (PL), time-resolved PL, and cathodoluminescence (CL) measurements. With increasing quantum well thickness up to 4 nm, the PL emission energy decreases and the blueshift of the PL emission energy increases with increasing excitation density. On the other hand, the PL emission energy of the DQWs with L_w=16 nm is higher than that of the DQWs with L_w=4 nm, and is independent of the excitation density. With increasing L_w from 1 to 4 nm, the PL decay times increase. In contrast, the decay times of 16 nm DQWs are faster than those of 4 nm DQWs. These different results for 16 nm DQWs such as the blueshift of the emission energy, the decrease of the excitation density dependence, and the increase of recombination rate can be ascribed to the relaxation of the piezoelectric field. We also observed the inhomegeneity in the CL spectra of the DQWs with L_w=1 nm on 1 μm scale.     

Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers

Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=E_g(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field.     

Extremely large binding energy of biexcitons in an organic-inorganic quantum-well material (C4H9NH3)2PbBr4

We have confirmed biexciton formation in an organic-inorganic hybrid quantum-well material (C₄H₉NH₃)₂PbBr₄ by photoluminescence and two-photon absorption measurements. The biexciton has extremely large binding energy, 60 meV, which to our knowledge is the largest value ever reported for a semiconductor. By analyzing the spectrum of biexciton luminescence, the biexciton gas temperature was found to be much higher than the bath temperature due to a higher local temperature arising from the large biexciton binding energy.     

Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures

The effect of low-energy electron-beam (e-beam) irradiation on the InGaN-related cathodoluminescence in multiple quantum well (MQW) InGaN/GaN light-emitting diode (LED) structures has been studied. It is shown that the e-beam exposure leads to an increase of emission intensity and to a formation of new blue-shifted emission bands. The changes observed were explained by the enhancement of In diffusion stimulated by excess carrier recombination.     

Optical properties of GaNAs/GaAs triple quantum well structures

Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hν=E_g(GaN_xAs_1−x). A matrix transfer algorithm was used to match the GaN_xAs_1−x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.     

Microstructural and optical properties of strain compensated InxGa1−xAs/InyAl1−yAs multiple quantum wells

Transmission electron microscopy (TEM) and photocurrent (PC) measurements were carried out to investigate the microstructural and excitonic transitions in In_0.52Ga_0.48As/In_0.55Al_0.45As multiple quantum wells (MQWs). TEM images showed that high-quality 11-period strain-compensated In_0.52Ga_0.48As/In_0.55Al_0.45As MQWs had high-quality heterointerfaces. Based on the TEM results, a possible crystal structure for the In_0.52Ga_0.48As/In_0.55Al_0.45As MQWs is presented, and their strains are compensated. The results for the PC data at 300 K for several applied electric fields showed that several excitonic transitions shifted to longer wavelengths as the applied electric field increased. These results indicate that the strain-compensated In_0.52Ga_0.48As/In_0.55Al_0.45As MQWs hold promise for electroabsorption modulator devices.     

The effect of a strong magnetic field on the binding energy and the photoionization process in quantum-well wires

Within the effective-mass approximation, we have investigated the influence of a strong magnetic field on the ground state binding energy and the photon energy dependence of the photoionization cross-section of a shallow donor impurity in a quasi-one-dimensional rectangular quantum wire with infinite and finite potential barriers, using a variational approach. It is found that the binding energy and the photoionization cross-section as a function of photon energy were drastically dependent on the sizes of the wire, the potential well heights and the applied magnetic field.     

Terahertz surface plasmon excitation over a bismuth thin film by an electron beam

The excitation of terahertz surface plasma wave (SPW) over bismuth thin film-glass structure by a parallel propagating electron beam is studied. The SPW phase velocity is sensitive to the thickness of bismuth film and it is driven via the Cerenkov resonance. The growth rate for terahertz radiation generation by an electron beam is obtained under small signal approximation.     

Submillimeter wave induced resistance oscillations in ultra-high mobility two-dimensional electron systems

Submillimeter wave induced resistance oscillations in two ultra-high mobility GaAs/Al_0.24Ga_0.76As quantum well samples have been investigated by means of a backward wave oscillator and far-infrared laser at ³He temperatures. Subnikov–de Haas oscillation, submillimeter wave induced resistance oscillation, and magnetoplasmon resonance occur simultaneously in this frequency regime. The primary radiation induced resistance minimum shifts toward cyclotron resonance with increasing radiation frequency. The positions of these minima agree well with those of the magnetoplasmon resonance. The higher-order harmonics of the resistance oscillation remain around the multiples of the cyclotron resonance frequency. An in situ transmission measurement exhibits an asymmetric broadening of the cyclotron resonance, appearing as a combination of the cyclotron resonance and the magnetoplasmon resonance, but no features directly linked to the microwave induced resistance oscillation can be seen.     

Shake-up processes in intersubband magneto-photoabsorption of a two-dimensional electron gas

I theoretically study shake-up processes in photoabsorption of an interacting low-density two-dimensional electron gas (2DEG) in magnetic fields. Such processes, in which an incident photon creates an electron–hole pair and simultaneously excites one electron to one of the higher Landau levels, were observed experimentally [Phys. Rev. Lett. 79 (1997) 3974] and were called combined exciton-cyclotron resonance (ExCR). The recently developed theory of ExCR [Phys. Rev. B 64 (2001) 241101] allows for a consistent treatment of the Coulomb correlations, establishes the exact ExCR selection rules, and predicts the high-field features of ExCR. In this work, I generalize the existing theory of high-field ExCR in the 2DEG to the case when the hole is excited to higher hole Landau levels.     

基底性质对二维层状电子气感应电场的影响

采用线性化量子流体动力学模型,研究了载能粒子与二维层状电子气相互作用时的集体静电激发现象。在适当的边界条件下推导出感应电势,入射粒子所受的阻止力和侧向力的一般表达式,讨论了存在绝缘基底情况下基底介电常数对感应电势、阻止力及侧向力的影响。结果表明:当入射粒子速度较小时,基底的极化电场较弱,其介电常数的变化对感应电场几乎无影响,而当速度较高时因极化电场较强而影响很大;入射粒子距离与基底相连的电子气平面越近,基底介电常数对各物理量的影响越大。     

Size-dependent linear and non-linear optical response of single carrier two-dimensional quantum dots

We explore the pattern of size dependence of linear and non-linear optical (NLO) responses of one-electron quantum dots in two dimensions with or without anharmonicity in the confinement potential. For some fixed values of transverse magnetic field strength (ω_c) and harmonic confinement potential (ω₀), the influence of the size of the dot on the linear (), the first (β) and the second (γ) NLO responses of the system computed through a finite field linear variational route is analysed. Size-dependent maximization is predicted to be feasible for the quadratic hyperpolarizability.     

Effects of an electric field on the electronic and optical properties of zigzag boron nitride nanotubes

We have investigated the electro-optical properties of zigzag BNNTs, under an external electric field, using the tight binding approximation. It is found that an electric field modifies the band structure and splits the band degeneracy. Also the large electric strength leads to coupling the neighbor subbands which these effects reflect in the DOS and JDOS spectrum. It has been shown that, unlike CNTs, the band gap of BNNTs can be reduced linearly by applying a transverse external electric field. Also we show that the larger diameter tubes are more sensitive than small ones. The semiconducting metallic transition can be achieved through increasing the applied fields. The number and position of peaks in the JDOS spectrum are dependent on electric field strength. It is found that at a high electric field, the two lowest subbands are oscillatory with multiple nodes at the Fermi level.