Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode

Solar-blind ultraviolet detection is of great importance in astronomy and industrial and military applications.Here, we report enhanced solar-blind ultraviolet single-photon detection by a normal silicon avalanche photodiode(Si APD) single-photon detector with a specially designed photon-collecting device. By re-focusing the reflected photon from the Si chip surface on the detection area by the aluminum-coated hemisphere, the detection efficiency of the Si APD at 280 nm can be improved to 4.62%. This system has the potential for high-efficiency photon detection in the solar-blind ultraviolet regime with low noise.     

Reverse biased porous silicon light-emitting diodes for optical intra-chip interconnects

We have reported recent progress in development of the integrated optoelectronic unit on a Si chip. The developed optoelectronic unit includes a porous Si light-emitting diode (LED) connected with a photodetector by an alumina waveguide. Main attention has been devoted to the enhancement of LED parameters. Quantum efficiency as high as 0.4% has been reached. The delay time of 1.2 ns and the rise time of 1.5 ns have been measured for the diodes. Further improvements are also discussed.     

Charge storage and electron/light emission properties of silicon nanocrystals

Monodispersed silicon nanocrystals show novel electrical and optical characteristics of silicon quantum dots, such as single-electron tunneling, ballistic electron transport, visible photoluminescence and high-efficiency electron emission.Single-electron memory effects have been studied using a short-channel MOSFET incorporating Si quantum dots as a floating gate. Surface nitridation of Si nanocrystal memory nodes extends the charge-retention time significantly. Single-electron storage in individual Si dots has been evaluated by Kelvin probe force microscopy.Photoluminescence and electron emission are observed for surface-oxidized silicon nanocrystals. Efficiency of the no-phonon-assisted transition increases with decreasing core Si size. Electron emission efficiency as high as 5% has been achieved for the Si-nanocrystal-based cold electron emitter devices. The non-Maxwellian energy distribution of emitted electrons suggests that the mechanism of electron emission is due to ballistic transport through arrays of surface-oxidized Si nanocrystals. Combined with the ballistic electron emission, the quasi-direct light emission properties can be used for developing Si-based lasers.     

Synchrotron radiation interference in front of the silicon absorption edge for silicon-on-insulator structures

The synchrotron radiation (SR) interference phenomenon has been for the first time observed in a strained silicon nanolayer deposited on a dielectric SiO₂ layer (∼150 nm) on Si (100) single crystalline substrates (silicon-on-insulator (SOI) structures). Strong oscillations of spectra intensity depending on photon energy have been detected in the energy range preceding the elementary silicon Si L _2,3 absorption edge (≤100 eV) at grazing angles of SR smaller than 21° in the X-ray photoeffect quantum yield structure. The phase of the spectra oscillation structure is reversed for small variations of grazing angle in the 4°–21° range. The silicon nanolayer thickness (∼180 nm) has been estimated in the three-layer, Si nanolayer-SiO₂-Si substrate structure with the use of neighbor maxima positions of ultrasoft X-ray radiation interference in XANES (X-ray absorption near edge structure) spectra. A decrease in the crystal lattice parameter of a strained silicon layer along the normal to substrate has been determined by X-ray diffraction. An increase in the Si-Si interatomic distances in the strained silicon nanolayer lattice of SOI structure has been found using ultrasoft X-ray emission spectroscopy data.     

Thin macroporous silicon heterojunction solar cells

We demonstrate the processing of a heterojunction solar cell from a purely macroporous silicon (MacPSi) absorber that is generated and separated from a monocrystalline n‐type Cz silicon wafer by means of electrochemical etching. The etching procedure results in straight pores with a diameter of (4.7 ± 0.2) µm and a distance of 8.3 µm. An intrinsic amorphous Si (a‐Si)/p⁺‐type a‐Si/indium tin oxide (ITO) layer stack is on the front side and an intrinsic a‐Si/n⁺‐type a‐Si/ITO layer stack is on the rear side. The pores are open when depositing the layers onto the 3.92 cm²‐sized cell. The conductive layers do not cause shunting through the pores. A silicon oxide layer passivates the pore walls. The energy‐conversion efficiency of the (33 ± 2) µm thick cell is 7.2%. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Relative enhancement of photoluminescence intensity of passivated silicon nanocrystals in a silicon dioxide matrix

Photoluminescence (PL) intensity of passivated silicon nanocrystals (Si NCs) embedded in a SiO 2 matrix is compared with that of unpassivated Si NCs. We investigate the relative enhancement of PL intensity (I R ) as a function of annealing temperature and implanted Si ion dose. The I R increases simultaneously with the annealing temperature. This demonstrates an increase in the number of dangling bonds (DBs) with the degree of Si crystallization varying via the annealing temperature. The increase in I R with implanted Si ion dose is also observed. We believe that the near-field interaction between DBs and neighboring Si NCs is an additional factor that reduces the PL efficiency of unpassivated Si NCs.     

Light emitting devices based on silicon nanostructures

In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light emitting devices based on silicon nanostructures. The performances of crystalline, amorphous and Er-doped Si nanostructures are presented and compared. We show that all devices are extremely stable and robust, resulting in an intense room temperature electroluminescence (EL) at around 900 nm or at 1.54 μm. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature EL with the advantage to be formed at a temperature of only 900 °C, remarkably lower than the temperature needed for the formation of Si nanocrystals (1100 °C or higher). To improve the extraction of the light, we coupled the emitting system with a 2D photonic crystal structure properly fabricated with ULSI technology to reduce the total internal reflection of the emitted light. We demonstrate that the extraction efficiency is increased by a factor of 4. Finally, the light emission from devices based on Er-doped Si nanoclusters has been studied and in particular we have investigated the luminescence quenching processes limiting quantum efficiency in these devices. In fact the carrier injection, that determines the excitation of Er ions through electron–hole recombination, at the same time produces an efficient non-radiative Auger de-excitation with trapped carriers. These data are presented and the implications on the device performances discussed.     

Characterization of silicon sites in monoclinic zeolite ZSM-5 using 29Si magic angle spinning (MAS) nuclear magnetic resonance (NMR) and molecular modelling

An attempt has been made to correlate the experimentally observed 29Si MAS NMR chemical shifts of monoclinic phase of highly siliceous ZSM-5 with their electronic properties. In order to incorporate the influence of next neighbor atoms on the 29Si chemical shielding of central SiO4, a pentameric cluster model (H12Si5O16) has been chosen. Each of the 24 crystallographically distinct Si sites, of ZSM-5 framework has been modelled by such cluster models. Based on semi-empirical quantum chemical calculations, a multiple linear regression analysis of the various electronic properties with the 29Si chemical shifts has been attempted. The relative difference in 29Si chemical shifts for the Si sites in ZSM-5 is reasonably accounted, although quantitative prediction may require non-empirical quantum chemical calculations.     

Relative enhancement of photoluminescence intensity of passivated silicon nanocrystals in silicon dioxide matrix

Photoluminescence (PL) intensity of passivated silicon nanocrystals (Si NCs) embeded in an SiO₂ matrix is compared with that of unpassivated ones. We investigate the relative enhancement of PL intensity (I_R) as a function of annealing temperature and implanted Si ion dose. The I_R increases simultaneously with the annealing temperature. This demonstrates an increase in the number of dangling bonds (DBs) with the degree of Si crystallization via varying the annealing temperature. The increase in I_R with implanted Si ion dose is also observed. We believe that the near-field interaction between DBs and neighboring Si NCs is an additional factor that reduces the PL efficiency of unpassivated Si NCs.     

X‐ray excited optical luminescence from crystalline silicon

Synchrotron based X‐ray excited optical luminescence (XEOL) has been measured with many direct bandgap semiconductors. We present XEOL measurements on crystalline silicon (Si), obtained despite of its indirect bandgap and the consequently low luminescence efficiency. Spectra of monocrystalline and multicrystalline (mc) Si at room temperature are compared to theoretical spectra. A possible application in the synchrotron‐based research on mc‐Si is exemplified by combining XEOL, X‐ray fluorescence (XRF) spectroscopy, photoluminescence (PL) spectroscopy, and microscope images of grain boundaries. This approach can be utilized to investigate the recombination activity of metal precipitates, to analyze areas of different lifetimes on mc‐Si samples and to correlate additional material parameters to XRF measurements. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Formation of silicon carbide in silicon substrates during CF4/H2 dry etching

Silicon specimens which had been reactive ion etched in CF₄/X%H₂ (0≤ X ≤40) and subsequently air exposed have been characterised by X-ray photoelectron emission spectroscopy. Angular rotation was used to study films deposited by the plasma process onto the Si surface. In agreement with previous studies it is found that plasma exposure of Si specimens leads to the deposition of a fluorocarbon film. An intriguing new finding was the discovery of subsurface silicon carbide. The existence of this carbide layer was found to be independent of gas composition from 0–40% H₂ for a one-minute plasma exposure. Helium ion channeling studies of the same specimens show Si near-surface disorder. A silicon-carbide formation mechanism is suggested according to which carbon is deposited below the Si surface by the bombardment of carbon containing ions, thus enabling silicon-carbon bonding.     

Hybrid process for texturization of diamond wire sawn multicrystalline silicon solar cell

Acid texture is difficult for diamond wire sawn (DWS) multicrystalline silicon (mc‐Si) wafer owing to the inhomogeneous distribution of damage layer on the surface. In this article, metal‐assisted chemical etching (MACE) has been selected for introducing a porous seeding layer to induce acid texturing etching. SEM results show that the oval pit structures coverage get obvious improvement even on the smooth areas. Owing to the further improved light absorption ability by second MACE and nanostructure rebuilding (NSR) process, nanostructured DWS mc‐Si solar cell has exhibited a conversion efficiency of 17.96%, which is 0.45% higher than that of DWS wafer with simple acid texture process. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.     

Characterization of silicon nanowires grown on silicon, stainless steel and indium tin oxide substrates

Silicon nanowires (SiNWs) have been grown on crystalline silicon (Si), indium tin oxide (ITO) and stainless steel (SS) substrates using a gold catalyst coating with a thickness of 200 nm via pulsed plasma-enhanced chemical vapor deposition (PPECVD). Their morphological, mineralogical and surface characteristics have been investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman analysis. SiNWs growth is accompanied by oxidation, thus yielding partially (SiO _x ) and fully oxidized (SiO₂) Si sheaths. The mean diameters of these SiNWs range from 140 to 185 nm. Si with (111) and (220) planes exists in SiNWs grown on all three substrates while Si with a (311) plane is detected only for Si and ITO substrates. Computational simulation using density functional theory (DFT) has also been conducted to supplement the experimental Raman analyses for crystalline Si and SiO₂. XPS results reveal that ca. 30 % of the SiNWs have been oxidized for all substrates. The results presented in this paper can be used to aid selection of appropriate substrates for SiNW growth, depending on specific applications.     

Light‐induced degradation and regeneration of multicrystalline silicon Al‐BSF and PERC solar cells

Light‐induced degradation (LID) is a well‐known problem faced by p‐type Czochralski (Cz) monocrystalline silicon (mono‐Si) wafer solar cells. In mono‐Si material, the physical mechanism has been traced to the formation of recombination active boron‐oxygen (B–O) complexes, which can be permanently deactivated through a regeneration process. In recent years, LID has also been identified to be a significant problem for multicrystalline silicon (multi‐Si) wafer solar cells, but the exact physical mechanism is still unknown. In this work, we study the effect of LID in two different solar cell structures, aluminium back‐surface‐field (Al‐BSF) and aluminium local back‐surface‐field (Al‐LBSF or PERC (passivated emitter and rear cell)) multi‐Si solar cells. The large‐area (156 mm × 156 mm) multi‐Si solar cells are light soaked under constant 1‐sun illumination at elevated temperatures of 90 °C. Our study shows that, in general, PERC multi‐Si solar cells degrade faster and to a greater extent than Al‐BSF multi‐Si solar cells. The total degradation and regeneration can occur within ～320 hours for PERC cells and within ～200 hours for Al‐BSF cells, which is much faster than the timescales previously reported for PERC cells. An important finding of this work is that Al‐BSF solar cells can also achieve almost complete regeneration, which has not been reported before. The maximum degradation in Al‐BSF cells is shown to reduce from 2% (relative) to an average of 1.5% (relative) with heavier phosphorus diffusion.     

X-ray absorption study of light emitting silicon nanocrystals

X-ray absorption spectra obtained by total electron yield (TEY) at the Si absorption K-edge have been measured to have chemical and structural information about Si nanocrystals (Si-nc) produced by plasma-enhanced chemical vapour deposition (PECVD). The TEY technique has been employed to investigate the formation of Si-nc and the modification of the silica matrix as a function of annealing temperature (500–1250°C) and of silicon content in the film (35–46 at%). The amount of silicon present in the Si-nc has been evaluated by TEY. Thanks to Rutherford backscattering spectrometry measurements, the amount of Si atoms bonded to oxygen and to nitrogen, incorporated by PECVD, has been assessed. A compositional model that interprets the experimental findings is presented.     

A study of the nitridation of silicon surfaces by low-energy electron diffraction and auger electron spectroscopy

Low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) have been used to study the initial stages of the nitridation of silicon. Most of the experiments involved pressures of 10^?5?10^?7 torr of ammonia and silicon temperatures in the range 800–1100°C. An earlier study of the nitridation of the Si (111) surface, has been extended to allow comparison between the (111), (311) and (100) faces of silicon. These surfaces provide a series of unit meshes with different shapes and symmetries while retaining some common geometrical features. Of particular interest for epitaxial theory is the growth of an impurity induced nitride structure, which is common to both Si(111) and Si (311). This may be explained if the nucleation and orientation of the niti ide are determined by the geometry of localised sites, common to both substrates. Subsequent growth of the nitride layer is then dominated by intra-layer bonding, so that the difference in substrate symmetries has little effect.     

Thermoelectric properties of porous silicon

We have studied the thermoelectric properties of porous silicon, a nanostructured, yet single-crystalline form of silicon. Using electrochemical etching, liquid-phase doping, and high-temperature passivation, we show that porous Si can be fabricated such that it has thermoelectric properties superior to bulk Si, for both n- and p-type doping. Hall measurements reveal that the charge carrier mobility is reduced compared to the bulk material which presently limits the increase in thermoelectric efficiency.     

Role of amorphous silicon domains of Er^3＋ emission in the Er—doped hydrogenated amorphous silicon suboxide film

An investigation on the correlation between amorphous Si (a-Si) domains and Er^{3+} emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H) film is presented. On one hand, a-Si domains provide sufficient carriers for Er^{3+} carrier-mediated excitation which has been proved to be the highest excitation path for Er^{3+} ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiO_x) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er^{3+} ions. This study provides a better understanding of the role of a-Si domains on Er^{3+} emission in a-Si:O:H films.     

High density amorphous form and polyamorphic transformations of silicon

Polyamorphic transformations of silicon have been investigated by constant-pressure first-principles molecular-dynamics simulations. By pressurizing a normal amorphous Si with tetrahedral coordination, a new high density amorphous (HDA) form that has a strong resemblance to HDA water is obtained. We find that the HDA form can be also obtained through vitrification of liquid Si under pressure. Both HDA and liquid Si contain deformed tetrahedral configurations with interstitial atoms. These findings indicate that HDA Si is directly connected with liquid Si, which is of particular importance in understanding phase relations of polyamorphs of Si.