共查询到19条相似文献,搜索用时 203 毫秒
1.
2.
用发光动力学的分析方法,研究了Ⅲ—Ⅴ族化合物中N束缚激子的发光强度与温度的关系,得到的理论公式与实验结果符合得较好。我们的分析指出,由于无辐射能量传递的存在,束缚激子的△J=2跃迁的发光效率低于△J=1跃迁的发光效率,致使低温(T<50K)下束缚激子的发光强度可能随温度的下降而变弱。另外,N杂质对自由激子再俘获的可能性的大小直接影响束缚激子发光的热猝灭过程:束缚激子可能因热离解成自由激子或自由的电子和空穴。我们找到了区分这两类情况的条件。 相似文献
3.
GaP1-xNx混晶中新束缚态的研究 总被引:2,自引:2,他引:0
利用变温光致发光(PL)谱及时间衰退发光谱研究了一系列CaP1-xNx混晶的光学性质。GaP1-xNx混晶的PL谱从低组分的NN对束缚激子及其声子伴线到高组分杂质带发光的特征,表现出明显的带隙降低的趋势。测量结果显示,在组分x≥0.24%的样品的发光谱中NN1能量之下已经开始出现几个新的束缚态,对其激活能的拟合及对时间衰退发光谱的分析表明,新的束缚态一方面仍保留有N束缚激子的性质,另一方面又表现出有别于NN对束缚激子的发光机制。说明新的束缚态有可能由新的N原子组成(如NNN原子)或与NN对束缚激子存在着某种相互作用。 相似文献
4.
本文将基于有效质量近似下的变分法,理论研究了纤锌矿InGaN/GaN staggered量子阱中的激子态和光学性质.数值结果显示了InGaN量子阱中的量子尺寸和staggered受限垒对束缚于量子阱中的激子态和光学性质有着明显的影响.当阱宽增加时,量子受限效应减弱,激子结合能降低,带间发光波长增加.另一方面,当量子阱中staggered受限势增加时,量子受限效应增强,激子结合能升高,带间发光波长降低.本文的理论结果证明了可以通过调节staggered垒高和量子尺寸来调控纤锌矿InGaN staggered量子阱中的激子态和光学性质. 相似文献
5.
通过对GaP1-xNx混晶的瞬态发光特性的研究,揭示了在低组分下N杂质从NNi对束缚激子的特性逐渐向高组分下形成GaP1-xNx混晶的杂质带的演变。在较低组分下,样品的发光由NNi对束缚激子及其声子伴线构成,从NN1到NN4的衰减时间分别在90~30ns变化。当组分提高到x~1.3%以上时,样品的发光呈现出一个宽带,并按单指数规律衰减,辐射复合寿命大约在数十个纳秒量级,且随着N组分的增加,寿命相对减小;但在最高组分(x~3.1%)时,其寿命仍与NN4束缚激子的寿命相当(~30ns),说明GaP1-xNx混晶新形成的杂质带仍然保持束缚激子较长的辐射复合寿命。且该杂质带低能端载流子的寿命比高能端载流子的寿命长,导致了其时间分辨谱向低能端的移动。同时在低组分样品的时间分辨谱的测量中,直接观察到了从较浅NN对束缚激子向较深NN对束缚激子的能量传输现象。 相似文献
6.
对分子束外延生长带边激子发光的Si1-xGex/Si量子阱结构,通过Si离子自注入和不同温度退火,观测到深能级发光带和带边激子发光的转变.Si离子注入量子阱中并在600℃的低温退火,形成链状或小板式的团簇缺陷,它导致深能级发光带的形成,在850℃的高温退火后重新观测到带边激子发光.这种团簇缺陷的热离化能约为0.1eV,比Si中空穴或填隙原子缺陷的热激活能(约0.05eV)高.这表明早期文献中报道的深能级发光带是由类似的团簇缺陷产生的.
关键词: 相似文献
7.
8.
本文将基于有效质量近似下的变分法,理论研究了纤锌矿InGaN/GaN staggered 量子阱中的激子态和光学性质。数值结果显示了InGaN量子阱中的量子尺寸和staggered受限垒对束缚于量子阱中的激子态和光学性质有着明显地影响。当阱宽增加时,量子受限效应减弱,激子结合能降低, 带间发光波长增加。另一方面,当量子阱中staggered受限势增加时,量子受限效应增强,激子结合能升高,带间发光波长降低。本文的理论结果证明了可以通过调节staggered垒高和量子尺寸来调控纤锌矿InGaN staggered 量子阱中的激子态和光学性质。 相似文献
9.
1950年黄昆先生与A.Rhys(里斯,黄昆先生夫人,中文名李爱扶)发表了F-中心的光吸收与非辐射跃迁理论的论文,这一论文被公认为是处理电子-声子互作用在固体缺陷光吸收的先驱开创性量子理论工作,其中首先由黄昆先生所推导和明确的一个用于表征电子-声子耦合强度的无量纲因子,被广泛采用和推崇为黄-里斯因子(Huang-Rhys factor),也被简称为S因子.本文试图总结黄-里斯因子的物理内涵,以及它在阐释几种固体有关光学性质中的关键作用,包括在深缺陷中心发光以及带边浅杂质束缚激子发光中的支配作用.研究发现,在不同性质的固体材料中,电子(激子)-声子耦合强度可以分为极弱耦合(黄-里斯因子远远小于1)、中等耦合(黄-里斯因子在1—5之间)以及强耦合(黄-里斯因子远远大于1)等几种情况.限于篇幅及个人理解,本文仅讨论GaN各种带边激子、二维单原子层半导体激子、无机卤族钙钛矿纳米晶片激子以及金刚石单晶中NV复合中心等极弱及中等强度耦合等几种情况,以纪念黄昆先生诞辰百周年. 相似文献
10.
11.
12.
Exciton emission has been observed in the forward-biased electroluminesence of ZnSe Schottky diodes free of intentionally added luminescent centres. The emission has been studied from ≈ 95° K to room temperature and is attributed to the recombination of free excitons (zero-LO phonon line). No LO phonon side bands were observed. As with exciton photoluminescence in CdS the half-width of the emission line, although a linear function of temperature, is greater than that predicted by theory. At temperatures below ≈150°K pair emission was also observed. 相似文献
13.
Cd3Al2Ge3O12锗酸盐石榴石中Cr3+的宽发射带和R线 总被引:2,自引:1,他引:1
本文首次报道了掺杂不同浓度Cr3+的Cd3Al2Ge3O12锗酸盐石榴石在295K和77K温度下的荧光光谱、Cr3+的鲜红色宽带发射强度与激励功率的关系及荧光衰减.发现在Cr3+的荧光光谱中存在从15400cm-1延伸到11400cm-1附近的宽带、两组R线及R线的Stokes和反Stokes振动光谱.295K时以宽带发射为主,77K时宽带明显减弱,R线发射显着增强.在Cd3Al2Ge3O12石榴石中,Cr3+离子的光谱是由两个性质上稍有差异的Cr3+中心发射组成的. 相似文献
14.
The temperature-dependent photoluminescence behaviour of chemical vapour transport (CVT)-grown ZnSe crystal is investigated. A new emission band appears when temperature is reduced to 155K. It is shown that the new emission band is strongly related to defect emission peaked at around 2.1 eV. The emergence of the new emission band is accompanied by decreasing emission intensity of free exciton, as well as redshiR of defect emission with temperature decreases. The activated energy of the defect state is estimated to be 60.6 meV, which is approximately equal to the energy difference between the new emission and the free exciton emission at 155K. 相似文献
15.
Fe3+激活的铝酸锂是深红色发射的红色荧光粉,其发射的峰值波长为675nm,呈现出少有的纯正的深红色发光。本文对LiAl5O8:Fe3+荧光粉的基质组成和激活剂浓度进行了研究。结果表明:Fe3+掺杂LiAl5O8的激发光谱,在λem=673nm的波长监测下,有序相的激发光谱在284nm处有强吸收带,为Fe3+-O2-电荷迁移带;激发波长λex=254nm的有序相样品的发射波长峰值为673nm,并伴随一个在长波方向轻微不对称得,发射是属于4T1(4G)-6A1(6S)的跃迁。当原料Li2CO3与Al2O3的量的比为0.21时,样品的发光强度最好;样品的发光强度随激活剂Fe3+的浓度的增加而提高,当浓度达到0.5%时,发光强度达到最大值,超过0.5%时呈现出浓度猝灭效应。 相似文献
16.
Pasquale FabeniAleksei Krasnikov Martin NiklGian Paolo Pazzi Svetlana Zazubovich 《Solid State Communications》2003,126(12):665-669
Defects of the type of VK and Pb+ centres were created in CsI:Pb under the 4.03 eV XeCl laser line irradiation at 10 K. After irradiation, the self-trapped and localized exciton emission excited by the same XeCl laser line was observed as a result of the recombination of electrons, optically released from Pb+, with the VK centres. A strongly superlinear dependence of the emission intensity on the excitation intensity was found for the 3.65 eV emission of the self-trapped exciton. A much weaker superlinearity was observed for the visible localized exciton emission. Optical amplification of the exciton emission was considered as the most probable reason of the observed phenomenon. At 10 K, optical gain G=3.74 was calculated for the self-trapped exciton emission. 相似文献
17.
A.J.H. Eijkelenkamp 《Journal of luminescence》1977,15(2):217-225
Photoluminescence measurements on a PbBr2 single crystal at 4.2 K revealed a violet and a yellow emission band, in addition to the UV, blue and red band which were already known. The violet and blue luminescence are ascribed to emission of an exciton bound by a defect. The UV emission is quenched at much lower temperature than reported previously, because of a more effective energy transfer from the exciton to defect centres. Luminescence results on PbCl2 and β-PbF2 are in fair agreement with those of other authors. 相似文献
18.
19.
We observe a large number of new lines in the near-band-edge (1060 to 1125 meV) photoluminescence of double-doped Si(B, In). The indium bound exciton lines appear as expected, however no bound exciton or bound multiexciton lines associated with boron are seen. The intensity of the new lines decreases relative to the intensity of the indium bound exciton line with increasing exciton power and decreasing temperature in the range from 1.2 to 20 K studied. 相似文献