The n = 0 replica limit of U(n) and U(n)/SO(n) models

Recently the replica limit n = 0 of the U(n) and U(n)/SO(n) models have attracted interest since they describe the Anderson localization behaviour in the band-centre of a two-sublattice model. For n ≠ 0 the theories can be decomposed into one with symmetry U(1) and one for SU(n) and U(n)/SO(n). This does not no longer hold for n = 0. We show how the beta-functions and zeta-functions for operators without derivatives can be obtained in this limit from those of SU(n) and U(n)/SO(n) and draw consequences for these functions in this limit.     

Crystal structures of stage-n iodine-intercalated compounds IBi2nSr2nCanCu2nOx

The crystal structure of stage-3 iodine-intercalated superconducting IBi₆Sr₆Ca₃Cu₆O_x has been determined by transmission electron microscopy to belong to the space group Pma2 with lattice parameters a=5.4Å, B=5.4Å and C=49.4Å. Ioidine atoms intercalated between every three Bi---O bilayers expand the distance between the Bi---O layers by 3.6Å and alter the atomic stacking across Bi---O layers from the staggered configuration characteristic of host superconducting Bi₂Sr₂CaCu₂O_x to an aligned configuration characteristic of stage-1 iodine-intercalated superconducting IBi₂Sr₂CaCu₂O_x. Higher-stage intercalation has also been observed as stacking faults which predominantly contain both stage-2 and stage-3 phases. The space groups and c-axis dimensions of the higher-stage phases have been deduced to be Pma2 with c=3.6+15.3n Å when stage number n is odd, and Bbmb with c=2(3.6+15.3n) Å when n is even.     

n-step optical simulation of the n-qubit state: Applications in optical computing

A method to implement optically 2ⁿ states in n steps, using n optical position bits, is presented. The implementation of the NOT and C-NOT operations, as well as the Fredkin-Toffoli and conditional sign change gates are also discussed.     

n-step optical simulation of the n-qubit state: Applications in optical computing

A method to implement optically 2ⁿ states in n steps, using n optical position bits, is presented. The implementation of the NOT and C-NOT operations, as well as the Fredkin-Toffoli and conditional sign change gates are also discussed.     

The n = 0 replica limit of U(n) and models

Recently the replica limit n = 0 of the U(n) and models have attracted interest since they describe the Anderson localization behaviour in the band-centre of a two-sublattice model. For n ≠ 0 the theories can be decomposed into one with symmetry U(1) and one for SU(n) and . This does not no longer hold for n = 0. We show how the beta-functions and zeta-functions for operators without derivatives can be obtained in this limit from those of SU(n) and and draw consequences for these functions in this limit.     

Integrable string models with constant torsion in terms of chiral invariants of SU(n), SO(n), SP(n groups

We used the invariant local chiral currents of principal chiral models for SU(n), SO(n), SP(n) groups to construct new integrable string equations of hydrodynamic type on the Riemann space of the chiral primitive invariant currents and on the chiral nonprimitive Casimir operators as Hamiltonians.     

Characterization of epitaxial n-GaP/p-PSi heterojunctions

The liquid phase epitaxy technique was used to fabricate heterojunction devices of n-GaP thin films grown on porous p-Si substrates. XRD and SEM techniques were used to investigate the structure of the GaP grown. Measurements of the current–voltage (I–V) and the capacitance–voltage (C–V) characteristics were evaluated to identify the mechanisms of barrier formation and consequently current flow. The results showed that forward current involves tunneling. It was explained in light of a multi-step tunneling recombination model due to a high density of interface defects. On the other hand, the reverse current seems to be limited by the generation mechanism. The C–V characteristics indicated an abrupt heterojunction model. In addition, various junction parameters were determined from the I–Vand C–V characteristics.     

Lower bounds for eigenvalues of the Dirac operator on n-spheres with SO(n)-symmetry

In this paper we derive estimates for the eigenvalues of the Dirac operator and their multiplicity on manifolds diffeomorphic to Sⁿ with an isometric SO(n)-action. Especially we prove a new lower bound for the first eigenvalue and show an example, where this new bound coincides in the limit with the known upper bounds.     

Measurement of quantum defect of nS and nD states using field ionization spectroscopy in ultracold cesium atoms

<正>This paper reports that ultracold atoms are populated into different nS and nD Rydberg states(n=25~52) by two-photon excitation.The ionization spectrum of an ultracold Rydberg atom is acquired in a cesium magneto-optical trap by using the method of pulse field ionization.This denotes nS and nD states in the ionization spectrum and fits the data of energy levels of different Rydberg states to obtain quantum defects of nS and nD states.     

Electron impact ionization of Ar n , (H2O) n , Ar n (H2O) m clusters

Signals from ions forming in a supersonic molecular beam consisting of an argon-water vapor mixture are measured as functions of the exciting electron energy in the range to 120 eV. The thresholds of electron impact excitation of (H₂O) _{n − 1}H⁺ and Ar _n (H₂O _m ⁺ clusters are determined for the first time. It is found that the proton-hydroxyl group binding energy decreases considerably both in the case of water molecule clustering and when mixed Ar _n (H₂O) _m clusters arise.     

Partition of arbitrary single-qubit information among n recipients via asymmetric (n+1)-qubit W state

A symmetric and(n,n)-threshold scheme for a sender to partition his/her arbitrary single-qubit information among n recipients is proposed by using a newly constructed asymmetric(n + 1)-qubit W state.Both the scheme in some given scenarios and the new W state are also discussed given.     

Detonation properties of stoichiometric gaseous n-heptane/oxygen/argon mixtures

A study of detonation velocity and cellular structure for stoichiometric heptane/oxygen and for some stoichiometric heptane/oxygen/argon mixtures is carried out in a shock tube at low initial pressure. The critical conditions for the detonation onset and for the propagation of a self-sustained detonation wave are determined. A simplified form of the ZND model used in conjunction with a validated detailed kinetic model leads to the determination of the proportionality factor, A, between the detonation cell width, λ, and the induction distance, Δ, in the detonation wave. This A factor is of practical importance to estimate the detonation properties of n-heptane based mixtures including n-heptane/air. The prediction of detonation cell size λ for n-heptane based mixtures is discussed according to the recent semi-empirical detonation model of Gavrikov et al. The cell sizes predicted according to this detonation model are underestimated by a factor of about 8. The limitations of this model are underlined when applied to n-heptane based mixtures.     

宽带非均匀半径渐变TE0n-TE0(n+1)模式转换器的设计研究

基于耦合波理论,对两类半径渐变圆波导TE_0n-TE_0(n+1)模式转换器进行理论分析、数值计算和仿真模拟.均匀半径渐变波导高功率模式转换器,采用中心频率为17.14GHz、六周期TE₀₂-TE₀₃模式和中心频率为34.30GHz、六周期TE₀₁-TE₀₂模式两种设计参数.非均匀半径渐变波导高功率模式转换器,采用中心频率为34.30GHz、六周期TE 关键词： 模式转换器 耦合波理论 非均匀半径渐变 转换带宽     

Matrix elements for the representations of SO(n) and SO0(n, 1)

Matrix elements of the unitary irreducible representations of the group SO(n) of class higher then 1 (with respect to SO(n−1)) in Gel'fand-Zetlin basis are obtained in explicit form. They are represented as polynomials in cosθ and sinθ of the order equal to the first coordinate of the highest weight. Making use of them the representation matrix elements for the group SO₀(n, 1) in SO(n) basis are calculated.     

Electrical characteristics and the energy band diagram of the isotype n-Si1?xGex/n-Si heterojunction in relaxed structures

The electrical characteristics of the relaxed isotype n-Si_1−x Ge_x/n-Si heterojunction are studied for the case of a misfit-dislocation network formed in the vicinity of the heterointerface. The data obtained are used to analyze the energy bands of the heterostructure. The band structure of the crystal near the interface is shown to be formed by a charge at lattice defects. The potential-barrier parameters are estimated by analyzing the temperature dependences of the J-U and C-U characteristics of the system. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 11, 2004, pp. 2069–2075. Original Russian Text Copyright ? 2004 by Orlov, Horváth, Potapov, Orlov, Ivin, Vdovin, Steinman, Fomin.     

Impurity dependence of phonon-assisted tunneling in n-Ge

Phonon-assisted tunneling was investigated in n-Ge metal-semiconductor junctions as a function of impurity concentration in the semiconductor. The contributions to the conductance due to the LA, TA, LO and TO phonons were measured and the relative contribution of LA to TA and LA to TO phonons was found to depend on impurity concentration. This is in disagreement with the theory based on the ‘second order process’ and indicates that other processes should also be considered.     

Structures and electronic properties of Mo2nNn（n=1-5）:a density functional study

The lowest-energy structures and the electronic properties of Mo2nNn(n=1-5) clusters have been studied by using the density functional theory(DFT) simulating package DMol 3 in the generalized gradient approximation(GGA).The resulting equilibrium geometries show that the lowest-energy structures are dominated by central cores which correspond to the ground states of Mo n(n = 2,4,6,8,10) clusters and nitrogen atoms which surround these cores.The average binding energy,the adiabatic electron affinity(AEA),the vertical electron affinity(VEA),the adiabatic ionization potential(AIP) and the vertical ionization potential(VIP) of Mo2nNn(n=1-5) clusters have been estimated.The HOMO-LUMO gaps reveal that the clusters have strong chemical activities.An analysis of Mulliken charge distribution shows that charge-transfer moves from Mo atoms to N atoms and increases with cluster size.     

Orbital responses to methyl sites in CnH2n+2 (n=1-6)

Orbital responses to methyl sites in C_nH_2n+2 (n=1-6) are studied by B3LYP/TZVP based on the most stable geometries using the B3LYP/aug-cc-pVTZ method. Vertical ionization energies are produced using the SAOP/et-pVQZ model for the complete valence space. The highest occupied molecular orbital (HOMO) investigations indicate the p-electron profiles in methane, ethane, propane, and n-butane. By increasing the number of carbon-carbon bonds in lower momentum regions, the s, p-hybridized orbitals are built and display strong exchange and correlation interactions in lower momentum space (P≤0.50 a.u.). Meanwhile, the relative intensities of the isomers in lower momentum space show the strong bonding number dependence of the carbon-carbon bonds, meaning that more electrons have contributed to orbital construction. The study of representative valence orbital momentum distribution further confirms that the structural changes lead to evident electronic rearrangement over the whole valence space. An analysis based on the isomers reveals that the valence orbitals are isomer-dependent and the valence ionization energy experiences an apparent shift in the inner valence space. However, such shifts are greatly reduced in the outer valence space. Meanwhile, the opposite energy shift trend is found in the intermediate valence space.     

Cross-section measurements of (n, 2n) and (n, p) reactions on 124,126,128,130,131,132Xe in the 14 MeV region and theoretical calculations of their excitation functions

The reaction cross-sections of ¹²⁴Xe(n, 2n)¹²³Xe, ¹²⁶Xe(n, 2n)¹²⁵Xe, ¹²⁸Xe(n, 2n)¹²⁷Xe, ¹³⁰Xe(n, 2n)^129mXe, ¹³²Xe(n, 2n)^131mXe, ¹³⁰Xe(n, p)¹³⁰I, ¹³¹Xe(n, p)¹³¹I, and ¹³²Xe(n, p)¹³²I were measured at the 13.5, 13.8, 14.1, 14.4, and 14.8 MeV neutron energies. The monoenergetic neutrons were generated via the ³H(d,n)⁴He reaction at the China Academy of Engineering Physics using the K-400 Neutron Generator with a solid ³H-Ti target. A high-purity germanium detector was employed to measure the activities of the product. The reactions ⁹³Nb(n, 2n)^92mNb and ²⁷Al(n, α)²⁴Na were adopted for neutron flux calibration. The cross sections of the (n, 2n) and (n, p) reactions of the xenon isotopes were obtained within the 13–15 MeV neutron energy range. These cross-sections were then compared with the IAEA-exchange format (EXFOR) database-derived experimental data, together with the evaluation results of the CENDL-3, ENDF/B-VIII.0, JENDL-4.0, RUSFOND, and JEFF-3.3 data libraries, as well as the theoretical excitation function obtained using the TALYS-1.95 code. The cross-sections of the reactions (except for the ¹²⁴Xe(n, 2n)¹²³Xe and ¹³²Xe(n, p)¹³²I) at 13.5, 13.8, and 14.1 MeV are reported for the first time in this study. The obtained results are beneficial in providing better cross-section constraints for the reactions in the 13–15 MeV region, thus improving the quality of the corresponding database. Meanwhile, these data can also be used for the verification of relevant nuclear reaction model parameters.     

Scaling contributions to the free energy in the 1/n expansion of O(n) nonlinear sigma models in d-dimensions

Within the 1/N expansion of O(N) nonlinear σ models for d≤4 it is possible to separate consistently the spin-wave and the massive-mode contributions to the scaling part of the free energy near criticality, and to evaluate them to O(1/N). For critical dimensions d=2+2/n the Abe-Hikami anomaly is recovered, while for d=2 the removal of the spin-wave term is justified.