High resolution ethylene absorption spectrum between 6035 and 6210 cm-1

A two-channel photo-acoustic spectrometer (PA spectrometer) with a near infrared diode laser was used for taking measurements of a high resolution ethylene absorption spectrum. A semiconductor TEC-100 laser with an outer resonator generates a continuous single-frequency radiation in the range 6030–6300 cm^-1. A newly designed model of photo-acoustic detector (PAD) in the form of a ring type resonator provides for measurement of weak absorption cross-section equal to 4×10^-23 cm²/mol at a laser radiation power of 3 mW. The PAD threshold sensitivity is 2×10^-9 cm^-1 Hz^-1/2 W, when the signal to noise ratio equals to 1. The ethylene absorption spectrum within the range 6035–6210 cm^-1 was measured for the first time with a spectral resolution of 10 MHz. The reported line centre positions have an uncertainty of ± 0.0005 cm^-1. The precise measurements of ethylene absorption cross-sections were carried out using the mixture of high purity ethylene and broadening gas (nitrogen) at the mixture ratio 1:50–1:200. Measurements were carried out at a mixture pressure of about 4.2 kPa. PACS 42.62.Fi; 42.55.Px     

The ground-state rotational constants of silane

From thirty-nine combination difference equations we have determined three significant ground-vibronic state constants of silane: β ⁰/hc=2·85941 cm^-1, γ ⁰/hc=-3·82×10^-5 cm^-1 and ε ⁰/hc=-7·97×10^-7 cm^-1 or in Hecht's notation B ₀=2·85941 cm^-1, D _s=3·82×10^-5 cm^-1 and D _t=2·436×10^-6 cm^-1.     

钴离子注入对二氧化钛晶体的结构和光学性能的影响

采用离子注入法制备了钴离子掺杂的金红石相TiO₂样品;离子注入能量、注量分别为40 keV(1×10¹⁶cm^-2),80 keV(5×10¹⁵,1×10¹⁶,5×10¹⁶,1×10¹⁷cm^-2),120 keV(1×10¹⁶cm^-2). 通过XRD,XPS和UV-Vis等手段对掺杂前后样品的结构和光学性能进行了表征,分析了掺杂元素在金红石TiO₂中的存在形式. XRD测试表明随着注入能量的增加晶体的损伤程度增加. UV-Vis测试表明掺杂后所有样品在可见光区的吸收增强; 并且随着注量的增加,注量为5×10¹⁵cm^-2到5×10¹⁶cm^-2范围内注入样品的光学带隙逐渐变小. 关键词： 钴 二氧化钛 离子注入 掺杂     

Cavity-enhanced optical feedback-assisted photo-acoustic spectroscopy with a 10.4 μm external cavity quantum cascade laser

An ultra-sensitive photo-acoustic spectrometer using a 10.4 μm broadly tunable mid-IR external cavity quantum cascade laser (EC-QCL) coupled with optical feedback to an optical power buildup cavity with high reflectivity mirrors was developed and tested. A laser optical power buildup factor of 181 was achieved, which corresponds to an intra-cavity power of 9.6 W at a wavelength of 10.4 μm. With a photo-acoustic resonance cell placed inside the cavity this resulted in the noise-equivalent absorption coefficient of 1.9 × 10^?10 cm^?1 Hz^?1/2, and a normalized noise-equivalent absorption of 1.1 × 10^?11 cm^?1 W Hz^?1/2. A novel photo-acoustic signal normalization technique makes the photo-acoustic spectrometer’s response immune to changes and drifts in the EC-QCL excitation power, EC-QCL to cavity coupling efficiency and cavity mirrors aging and contamination. An automatic lock of the EC-QCL to the cavity and optical feedback phase optimization permitted long wavelength scans within the entire EC-QCL spectral tuning range.     

Resonance absorption and fluorescence in argon

Absorption cross sections of argon for argon resonance radiation have been measured by several techniques. The apparent cross sections are small (0·1 to 1·6 × 10^-18 cm²) for resonance absorption and the values depend on the technique used for measurement. These observations are interpreted in terms of extensive reversal and broadening in the source. The excitation and quenching of resonance fluorescence was studied to provide information about the rates of the processes

The rate constants were estimated relative to k _r, the rate constant for radiation. Radiation imprisonment leads to a reduction of k _r from its natural value and observations of the decay of resonance fluorescence suggest that k _r ～ 1·5 × 10⁵ s^-1 in our system at [Ar] = 2 × 10¹⁷ atom cm^-3. Combining this value with the relative values for the quenching rate constants gives k ₁ < 1·5 × 10^-13, k ₁′(M = N₂) ～ 6 × 10^-12, k ₁′(M = NO) ～ 4 × 10^-10, in units of cm³ s^-1 molecule^-1.     

基于沉淀工艺制作四脚氧化锌纳米材料场致发射阴极的研究

采用沉淀法制备四脚氧化锌纳米材料场致发射阴极,将阴极和荧光屏封装起来抽真空并对屏施加电压,测试阴极的发射电流和荧光屏的发光亮度.利用沉淀法制备出面积为(13×15) cm²的阴极,测试结果表明,硅酸钾体积百分比在50×10^-3—83×10^-3范围,硝酸钡浓度在50×10^-4—77×10^-4 M范围,四脚氧化锌的浓度在82×10^-4—12×10^{-3关键词： 场致发射 沉淀法 显示屏亮度}     

Lithium diffusion in Li<Subscript>3</Subscript>V<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>-based electrodes: a joint analysis of electrochemical impedance,cyclic voltammetry,pulse chronoamperometry,and chronopotentiometry data

In order to establish the mechanism and to determine the parameters of lithium transport in electrodes based on lithium-vanadium phosphate (Li₃V₂(PO₄)₃), the kinetic model was designed and experimentally tested for joint analysis of electrochemical impedance (EIS), cyclic voltammetry (CV), pulse chronoamperometry (PITT), and chronopotentiometry (GITT) data. It comprises the stages of sequential lithium-ion transfer in the surface layer and the bulk of electrode material’s particles, including accumulation of lithium in the bulk. Transfer processes at both sites are of diffusion nature and differ significantly, both by temporal (characteristic time, τ) and kinetic (diffusion coefficient, D) constants. PITT data analysis provided the following D values for the predominantly lithiated and delithiated forms of the intercalation material: 10^?9 and 3 × 10^?10 cm² s^?1, respectively, for transfer in the bulk and 10^?12 cm² s^?1 for transfer in the thin surface layer of material’s particles. D values extracted from GITT data are in consistency with those obtained from PITT: 3.5–5.8 × 10^?10 and 0.9–5 × 10^?10 cm² s^?1 (for the current and currentless mode, respectively). The D values obtained from EIS data were 5.5 × 10^?10 cm² s^?1 for lithiated (at a potential of 3.5 V) and 2.3 × 10^?9 cm² s^?1 for delithiated (at a potential 4.1 V) forms. CV evaluation gave close results: 3 × 10^?11 cm² s^?1 for anodic and 3.4 × 10^?11 cm² s^?1 for cathodic processes, respectively. The use of complex experimental measurement procedure for combined application of the EIS, PITT, and GITT methods allowed to obtain thermodynamic E,c dependence of Li₃V₂(PO₄)₃ electrode, which is not affected by polarization and heterogeneity of lithium concentration in the intercalate.     

Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance--voltage measurement. Using capacitance--frequency measurement, it finds one type of trap in conventional DHEMTs with τ_T=(0.5-6) ms and D_T= (1 - 5) × 10¹³ cm^-2·eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with τ_T(f)=(0.2-2) μs and slow with τ_T(s)=(0.5-6) ms. The density of trap states evaluated on the EHEMTs is D_T(f)=(1 - 3) × 10¹² cm^-2·eV^-1 and D_T(s)=(2 - 6) × 10¹² cm^-2·eV^-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.     

硅的低温电学性质

本文在20°—300°K研究了室温载流子浓度2×10¹²—1×10²⁰cm^-3含硼或磷(砷)Si的电学性质。对一些p-Si样品用弱场横向磁阻法及杂质激活能法进行了补偿度的测定,并进行了比较。从霍尔系数与温度关系的分析指出,对于较纯样品,硼受主能级的电离能为0.045eV,磷施主能级为0.045eV,在载流子浓度为10¹⁸—10¹⁹cm^-3时发现了费米简并,对载流子浓度为2×10¹⁷—1×10¹⁸cm^-3的p-Si及5×10¹⁷—4×10¹⁸cm^-3的n-Si观察到了杂质电导行为。从霍尔系数与电导率计算了非本征的霍尔迁移率。在100°—300°K间,晶格散射迁移率μ满足关系式AT^-a,其中A=2.1×10⁹,α=2.7(对空穴);或A=1.2×10⁸,α=2.0(对电子)。另外,根据我们的材料(载流子浓度在5×10¹¹—5×10²⁰cm^-3间),分别建立了一条电阻率与载流子浓度及电阻率与迁移率的关系曲线,以提供制备材料时参考之用。     

Capture cross-section and density of deep gap states in a−SiHx schottky barrier structures

Recombination of charge carriers in a?SiH_x Schottky barriers with density of states near mid-gap ranging from 2.8×10¹⁵?7×10¹⁶cm^-1eV^-1 is attributed to recombination centers with hole capture cross-section of 1.3×10^-15cm².     

Complex impedance study of annealing effects on polycrystalline KDP conductivity

Annealing effects on the conductivity of KDP (KH₂PO₄) samples prepared either by melting under slight pressure (5.7 kgf/cm²) or by powder compression (1.3 × 10³kgf/cm²) were studied in air by complex impedance spectroscopy. In both cases, annealing at 423 K reduces the conductivities to constant values: from 6.2 × 10 ⁻⁶ to 1.6 × 10⁻⁷ Ω⁻¹ cm⁻¹ for samples prepared by melting and from 1.9 × 10^∼7 to 6.1 × 10^∼8 Ω⁻¹ cm⁻¹ for samples prepared by compression. Heating KDP at about 500 K significantly modifies its electric properties. Two relaxation processes are observed after this treatment. One of them is associated with a fairly strong dielectric polarizability. A small conductivity jump is observed close to 440 K.     

α-Al2O3单晶中Fe3+离子的电子顺磁共振

本文对α-Al₂O₃单晶体中Fe³⁺离子在室温下,X波段进行了电子顺磁共振研究,发现Fe³⁺离子实际上占据四种磁性不等价晶位。在同一氧离子层间的两种晶位上的Fe³⁺离子具有相同的自旋哈密顿参量,而不同氧离子层间的晶位上的Fe³⁺离子具有不同的自旋哈密顿参量,两种自旋哈密顿参量为:(1)g_‖=2.001,g_⊥=2.003,D=1679 关键词：     

The analysis of symmetric rotor Raman spectra: The pure rotational spectrum of 11BF3

The pure rotational Raman spectrum of ¹¹BF₃ has been photographed. Great care was taken in the analysis to consider all the unresolved components under each observed Raman line profile. If this is ignored, systematic errors result. The final set of molecular constants obtained was B₀ = 0.34502(±3 × 10^?5)cm^?1, D_J = 4.38(±0.10) × 10^?7cm^?1, and D_JK = ?9.1(±1.0) × 10^?7cm^?1.     

一种测定某些离子导体的导电基本参数的新方法

利用低频交变电场在某些离子导体中能引起偏振态改变的光衍射特性,发展了一种测量这些离子导体的导电基本参数的新方法,并且用它测定了α-LiIO₃单晶的基本离子导电参数,测得其载流子的迁移率激活能E_μ=0.36eV;夫仑克耳缺陷的形成能为E_M=0.59eV;300K时正、负载流子的数密度均为1.6×10¹⁷cm^-3,相对浓度均为1.07×10^-5;当所加电场反平行于晶体的自发极化强 关键词：     

The GaP(001) surface and the adsorption of Cs

GaP(001) cleaned by argon-ion bombardment and annealed at 500°C showed the Ga-stabilized GaP(001)(4 × 2) structure. Only treatment in 10^?5 Torr PH₃ at 500°C gave the P-stabilized GaP(001)(1 × 2) structure. The AES peak ratio $\text{P}\text{Ga}$ is 2 for the (4 × 2) and 3.5 for the (1 × 2) structure. Cs adsorbs with a sticking probability of unity up to 5 × 10¹⁴ Cs atoms cm^?2 and a lower one at higher coverages. The photoemission measured with uv light of 3660 Å showed a maximum at the coverage of 5 × 10¹⁴ atoms cm^?2. Cs adsorbs amorphously at room temperature, but heat treatment gives ordered structures, which are thought to be reconstructed GaP(001) structures induced by Cs. The LEED patterns showed the GaP(001)(1 × 2) Cs structure formed at 180°C for 10 h with a Cs coverage of 5 × 10¹⁴ atoms cm^?2, the GaP(001)(1 × 4) Cs formed at 210°C for 10 hours with a Cs coverage of 2.7 × 10¹⁴ atoms cm^?2, the GaP(001)(7 × 1) and the high temperature GaP(001)(1 × 4), the latter two with very low Cs content. Desorption measurements show three stability regions: (a) between 25–150°C for coverages greater than 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.2 eV; (b) between 180–200°C with a coverage of 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.8 eV; (c) between 210–400°C with a coverage of 2.7 × 10¹⁴ atoms cm^?2, and an activation energy of 2.5 eV.     

Near infrared cw-CRDS coupled to laser photolysis: Spectroscopy and kinetics of the HO2 radical

We present in this work a new experimental set-up for sensitive detection of reactive species: continuous wave cavity ring-down spectroscopy (cw-CRDS) as a detection method in laser photolysis reactor. HO₂ radicals were generated by using a 248 nm photolysis of SOCl₂/CH₃OH/O₂ mixtures and were detected in the first vibrational overtone of the OH stretch around 6625 cm^-1, using a DFB diode laser. In order to perform the spectroscopic and kinetic measurements of the HO₂ radical, two different timing schemes have been used. The absorption line strength of the transition at 6625.784 cm^-1 has been extracted from kinetic measurement to (5.2±1.0)×10^-21 cm² molecule^-1cm^-1. The detection limit for the actual set-up is 2×10¹² molecules cm^-3. PACS 42.62.Fi; 82.33.Tb; 82.20.W     

Influences of thermal annealing, the electrolyte pH, and current density on the interface state density distribution of anodic MOS structures

2 /p-Si MOS structures were prepared in 0.1 M K₂SO₄ electrolyte with a pH of 7 (the 0.1 M KOH solution was buffered with H₂SO₄) at current densities of 3, 5, and 7 mA/cm² and with four different pH values of the electrolyte at 3 mA/cm². It is found that thermal annealing at a relatively low temperature can be used to improve the anodic MOS characteristics. Moreover, of the pH and current density it followed that the pH has a dominant role in the interface electrical properties. The lowest interface state densities at the maximum and the midgap positions are 7.1×10¹¹ and 2.7×10¹⁰ eV^-1cm^-2 for a sample made with pH=7, J=3 mA/cm². The characteristics of this sample seem satisfactory for device applications of anodized p-Si. Received: 8 July 1996/Accepted: 22 January 1997     

Rapid crystallization of silicon films using Joule heating of metal films

50-nm thick amorphous silicon films formed on glass substrates were crystallized by rapid Joule heating induced by an electrical current flowing in 100-nm-thick Cr strips formed adjacently to 200-nm-thick SiO₂ intermediate layers. 3-μs-pulsed voltages were applied to the Cr strips. Melting of the Cr strips caused a high Joule heating intensity of about 1×10⁶ W/cm². Raman scattering measurements revealed complete crystallization of the silicon films at a Joule heating energy of 1.9 J/cm² via the SiO₂ intermediate layer. Transmission electron microscopy measurements confirmed a crystalline grain size of 50–100 nm. 1-μm-long crystalline grain growth was also observed just beneath the edge of the Cr strips. The electrical conductivity increased from 10^-5 S/cm to 0.3 S/cm for 7×10¹⁷-cm^-3-phosphorus-doped silicon films because of activation of the phosphorus atoms because of crystallization. The numerical analysis showed a density of localized defect states at the mid gap of 8.0×10¹⁷ cm^-3. Oxygen plasma treatment at 250 °C and 100 W for 5 min reduced the density of the defect states to 2.7×10¹⁷ cm^-3. Received: 3 April 2001 / Accepted: 9 April 2001 / Published online: 25 July 2001     

Thulium doped monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> single crystals: growth and spectroscopy

This paper presents the crystal growth and optical characterization of thulium-doped KLu(WO₄)₂ (KLuW). Thulium-doped KLuW macrodefect-free monoclinic single crystals (a^*×b×c≈10×7×15 mm³) were grown by the top seeded solution growth slow cooling method with dopant concentrations of 0.5%, 1%, 3% and 5% atomic in solution. The evolution of unit cell parameters in relation with thulium doping was studied by X-ray powder patterns. Thulium energy levels in the KLuW host were determined by 6 K polarized optical absorption. The Judd–Ofelt parameters determined were Ω₂=9.01×10^-20 cm², Ω₄=1.36×10^-20 cm² and Ω₆=1.43×10^-20 cm². The maximum emission cross section for the 1.9 μm emission, calculated by Füchtbauer–Ladenburg method, is 1.75×10^-20 cm², at 1845 nm with E//N_m. The intensity decay time from the emitting levels ¹ G ₄ and ³ H ₄ levels in relation to the concentration were studied. For the lowest thulium concentration, the measured decay times from ¹ G ₄ and ³ H ₄ emitting levels are 140 μs and 230 μs, respectively. PACS 42.55.Rz; 78.20.-e; 78.55.-m     

Nonlinear optical characterization of LaEr(MoO<Subscript>4</Subscript>)<Subscript>3</Subscript> thin films using the <Emphasis Type="BoldItalic">Z</Emphasis> -scan technique

The nonlinear optical properties of thin films of LaEr(MoO₄)₃ were studied using a ∼30 ps Nd:YAG laser at 532 nm with a repetition rate of 250 Hz. Closed aperture Z-scan measurement revealed a negative nonlinearity in the LaEr(MoO₄)₃. The nonlinear refractive index γ=1.38×10^-10 cm²/W and nonlinear absorption coefficient β=16.8×10^-6 cm/W were calculated from the Z-scan data. The fluorescent upconversion spectra were recorded with 980 nm excitation. An optical switching mechanism based on nonlinear absorption is also presented experimentally. PACS 81.15.Fg; 77.84.Bw; 33.50.Dq; 42.70.Mp