Capacitance of anisotropic quantum dots

The many-electron ground states in anisotropic parabolic quantum dots are investigated, by means of an unrestricted Hartree–Fock method. From the total energy, both the chemical potential and the differential capacitance of quantum dots are calculated. The effect of the shell structure due to quantization appears clearly in the chemical potential and the capacitance. The difference of the calculated differential capacitance from the classical one is caused by both the exchange interaction and the quantization. As the vertical extent of a dot increases from two-dimensional limit, the change of capacitance is small owing to cancellation between changes of Hartree term and exchange term, except at special number of electrons.     

硅量子点中电子的荷电动力学特征

利用频率依赖电容谱的测量,对于SiO₂/硅量子点/SiO₂/硅衬底隧 穿电容中硅量子点的荷电特征进行了研究.由于量子点的极小尺寸和良好的均匀性,室温下 在强反型区成功地观察到了与单电子隧穿相关的两个电容和电导共振峰,它们分别对应于硅 衬底导带上的电子与量子点中第一与第二个基态之间直接隧穿过程.实验数据分析给出了量 子点中的库仑荷电能,并进行了讨论. 关键词： 量子点 电容谱 库仑荷电能 直接隧穿     

Negative differential conductance in InAs wire based double quantum dot induced by a charged AFM tip

We investigate the conductance of an InAs nanowire in the nonlinear regime in the case of low electron density where the wire is split into quantum dots connected in series. The negative differential conductance in the wire is initiated by means of a charged atomic force microscope tip adjusting the transparency of the tunneling barrier between two adjoining quantum dots. We confirm that the negative differential conductance arises due to the resonant tunneling between these two adjoining quantum dots. The influence of the transparency of the blocking barriers and the relative position of energy states in the adjoining dots on a decrease of the negative differential conductance is investigated in detail.     

Estimating ground-state properties of quantum dot arrays using a local Thomas-Fermi-Dirac approximation

An exactly solvable local Thomas-Fermi-Dirac approximation is applied to the calculation of the ground-state density of three-dimensional quantum dot arrays, where we give estimates to properties like total energy, chemical potential, and differential capacitance. Numeric examples are calculated for pairs of quantum dots using a Gaussian confining potential. The computational complexity of the present method is linear in the number of electrons and centers of the system.     

Coulomb effects in artificial molecules

We study the capacitance spectra of artificial molecules consisting of two and three coupled quantum dots from an extended Hubbard Hamiltonian model that takes into account quantum confinement, intra- and inter-dot Coulomb interaction and tunneling coupling between all single particle states in nearest neighbor dots. We find that, for weak coupling, the interdot Coulomb interaction dominates the formation of a collective molecular state. We also calculate the effects of correlations on the tunneling probability through the evaluation of the spectral weights, and corroborate the importance of selection rules for understanding experimental conductance spectra.     

水溶性CdTe:Mn量子点的双光子吸收

采用激发波长800 nm、脉宽50 fs、重复频率1 kHz的Ti:sapphire放大飞秒激光器作为激发光源,利用开孔Z扫描技术研究了不同粒径的CdTe:Mn量子点的非线性吸收性质。理论计算结果表明,同一生长时间CdTe:Mn量子点的双光子吸收系数是CdTe量子点的1.1倍,其双光子吸收系数随量子点尺寸的减小而增大,这是由于CdTe:Mn量子点非线性吸收属于反饱和吸收,掺杂了Mn元素,减小了表面缺陷浓度,表明掺杂量子点具有很好的双光子吸收现象。     

Plasmon mediated entanglement dynamics of distant quantum dots

We investigate the time evolution of entanglement between two quantum dots in an engineered vacuum environment such that a metallic nanoring having a surface plasmon is placed near the quantum dots. Such engineering in environment results in oscillations in entanglement dynamics of the quantum dots systems. With proper adjustment of the separation between the quantum dots, entanglement decay can be stabilized and preserved for longer time than its decay without the surface plasmons interactions.     

Electric field control of exciton states in quantum dot molecules

Semiconductor nanostructures have attracted considerable interest during the recent years in view of the potential application in quantum information processing. In particular, quantum dots have been suggested to fulfill an essential requirement for quantum computation: controllable interaction that couples two quantum dot qubits. Previous experiments on two vertically aligned quantum dots have demonstrated the formation of coupled exciton states. We show that this coupling between two In_0.60Ga_0.40As/GaAs quantum dots can be tuned by an electric field applied along the molecule axis. This controllable coupling in such a relatively simple configuration could be implemented in a solid-state-based quantum device.     

An impurity-induced gap system as a quantum data bus for quantum state transfer

We introduce a tight-binding chain with a single impurity to act as a quantum data bus for perfect quantum state transfer. Our proposal is based on the weak coupling limit of the two outermost quantum dots to the data bus, which is a gapped system induced by the impurity. By connecting two quantum dots to two sites of the data bus, the system can accomplish a high-fidelity and long-distance quantum state transfer. Numerical simulations for finite system show that the numerical and analytical results of the effective coupling strength agree well with each other. Moreover, we study the robustness of this quantum communication protocol in the presence of disorder in the couplings between the nearest-neighbor quantum dots. We find that the gap of the system plays an important role in robust quantum state transfer.     

Charge qubits and limitations of electrostatic quantum gates

We investigate quantum dot arrays and their application to quantum computation. The arrays analyzed contain a total of a few operating electrons with constant tunneling between the dots. We construct quantum two-level systems near the ground state with a large energy separation to the remainder of the states and with the electrostatic interaction modeled within the capacitance matrix formalism. A set of representative examples is investigated numerically.     

Polarization anisotropy of exciton in self-assembled elliptical InP/InGaP quantum dots

Optical anisotropy of self-assembled elliptical InP quantum dots has been investigated in terms of the polarization dependence of excitons. Although large size inhomogeneity is present, two kinds of characteristic quantum dots, which are classified into large and small quantum dots, were found in terms of the polarization anisotropy. We have confirmed that the large quantum dots are more pronounced in the polarization anisotropy, where the degree of linear polarization for the large quantum dots is significantly larger (∼60%) than that for the small ones (∼36%). The effective shape of quantum dots is also estimated by using the size dependence of oscillator strength, which is in agreement with the AFM image. We also suggest that the anisotropy of exciton oscillator strength can be modified via the dipole–dipole interaction between nearest exciton dipoles.     

Photon statistics from coupled quantum dots

We present an optical study of two closely stacked self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the quantum dots but also insight into the coupling mechanism. Our results are in agreement with recent theories predicting that tunneling is largely suppressed between nonidentical quantum dots and that the interaction is instead dominated by dipole-dipole coupling and phonon-assisted energy transfer processes.     

Exact electronic transport in an alternating A/B quantum dot array

The electronic transport in the quantum dot array for an arbitrary number of dots in which the quantum dot A is alternated with the quantum dot B is studied with the exact Green’s function calculation. The algebraic structures of the DC current, the differential conductance, and the density of states for the alternating A/B quantum dot array are obtained analytically. The results show that the two-step-like DC current, the two-main-peak-like differential conductance, and the multi-peak-like density of states will be sensitively modified by the number of dots and the difference for the one-electron level and the resonant width of the quantum dot A with ones of the quantum dot B.     

多层GaSb(QDs)/GaAs生长中量子点的聚集及发光特性

通过对多层GaSb量子点的生长研究,发现随着生长层数的增加,量子点尺寸逐渐变大,密度没有明显变化,并且量子点出现了聚集现象;当层数增加到一定数量、量子点聚集到一定大小时,聚集的量子点处会出现空洞。这些现象表明,各层量子点在生长过程中存在关联效应,并且GaAs层不能很好地覆盖在聚集的量子点之上,在继续生长其它量子点层时,聚集的量子点处在高温下出现GaSb的蒸发,从而出现空洞。PL谱出现了很宽的量子点发光峰,这很可能是由于多层量子点在生长时大小分布较宽而导致的结果。     

Nanophotonic droplet: a nanometric optical device consisting of size- and number-selective coupled quantum dots

Although recent advances in fabrication technologies have allowed the realization of highly accurate nanometric devices and systems, most approaches still lack uniformity and mass-production capability sufficient for practical use. We have previously demonstrated a novel technique for autonomously coupling heterogeneous quantum dots to induce particular optical responses based on a simple phonon-assisted photocuring method in which a mixture of quantum dots and photocurable polymer is irradiated with light. The cured polymer sequentially encapsulates coupled quantum dots, forming what we call a nanophotonic droplet. Recently, we found that each quantum dot in the mixture is preferably coupled with other quantum dots of similar size due to a size resonance effect of the optical near-field interactions between them. Moreover, every nanophotonic droplet is likely to contain the same number of coupled quantum dots. In this paper, we describe the basic mechanisms of autonomously fabricating nanophotonic droplets, and we examine the size- and number-selectivity of the quantum dots during their coupling process. The results from experiments show the uniformity of the optical properties of mass-produced nanophotonic droplets, revealed by emission from the contained coupled quantum dots, due to the fundamental characteristics of our method.     

Few-electron quantum dot fabricated with layered scanning force microscope lithography

Few-electron quantum dots with integrated charge read-out have been fabricated by layered local anodic oxidation of a Ga[Al]As heterostructure and a thin Titanium top gate. The additional set of gates provided by the metallic film is used to tune the quantum dots into the few-electron regime. Current through the quantum dots and the quantum dot charge have been simultaneously measured for electron numbers varying between zero and two. The singlet–triplet splitting varies in two different samples between 0.5 and 1.5 meV. The Zeeman splitting of the first conductance resonance is observed in parallel magnetic field. The high tunability and straightforward implementation of these structures are promising for future nanostructure design.     

Geometric Phase of Double Quantum Dot Qubits System with Coulomb Interaction

In quantum computing the geometric phase is a valuable tool to achieve fault tolerant. And quantum dot system is a candidate for constructing quantum processor. In this paper we investigate the geometric phase of a double qubits system interaction with a quantum point contact device. The qubits were constructed by two coupled double quantum dots systems. The coulomb interaction between the two subsystem have been considered. By using the definition which introduced by Tong, we calculate the geometric phases of each double quantum dots subsystem.     

Localization in artificial disorder: two coupled quantum dots

Using single electron capacitance spectroscopy, we study electron additions in quantum dots containing two potential minima separated by a shallow barrier. Analysis of the addition spectra in the magnetic field allows us to distinguish between electrons delocalized over the entire dot and those localized in either of the potential minima. We demonstrate that a high magnetic field abruptly splits up a low-density droplet into two smaller fragments, each residing in a potential minimum. An unexplained cancellation of electron repulsion between electrons in these fragments gives rise to paired electron additions.