Study of oxidation process of Cr/Cu/Cr thin film electrodes

Understanding the oxidation process of Cr/Cu/Cr laminated thin film electrode is important for developing new oxidation-resistant electrodes. By studying the evolution of crystal structure, morphology and electric resistivity of Cr/Cu/Cr thin films and electrodes that were post-annealed at different temperatures, the oxidation mechanism and process of Cr/Cu/Cr electrode were proposed. Copper is first oxidized into Cu₂O at low temperatures (<310 °C), and converts to CuO phase at higher temperatures. Two pathways for oxygen diffusion were identified: diffusion from the protective Cr layer, and diffusion from the sidewall of electrode, of which the latter one leads to total oxidation of copper interlayer at high temperatures (>310 °C). As a result, the passivation of Cu metal at electrode sidewalls is crucial in reducing oxidation of Cr/Cu/Cr electrodes or designing new copper-containing oxidation-resistant electrodes.     

Spontaneous exchange-bias in Fe/Mn thin multilayers

Fe/Mn multilayers were grown by means of a molecular beam epitaxy system onto quartz substrates changing the thickness of the elemental layers. A spontaneous unidirectional anisotropy develops for thickness of Fe or Mn layer of about 35 Å. Since the samples were no subjected to field cooling treatments during or after the growth, this kind of anisotropy can be explained considering besides the exchange coupling at the Fe/Mn interface, the structural disorder due to dislocations and defects. In effect, the appearance and strength of the exchange-bias field are depending on the surface roughness of the samples and are significantly enhanced by the formation of a structure constituted by islands showing a snake-like morphology. The fitting of the angular dependence of the exchange-bias field indicates that the associated anisotropy is due to the superposition of two contributions, the principal one with unidirectional symmetry and the other showing uniaxial characteristics.     

Hybrid AMR/PHR ring sensor

The AMR (anisotropic magnetoresistance) and PHR (planar Hall resistance) contribution was analyzed for fabricated ring type sensor junctions in single and multiring bridge sensors, and their field sensitivity was examined. The voltage profile, i.e. the sum of AMR and PHR effects, reveal anti-symmetric behavior with the magnetic field with small offsets due to the self-balancing of ring arm resistances, but the voltage variations for the external field are additive for all junction components. The field sensitivity of the resistance for a single ring sensor is , and its value monotonously increased to for 17 rings with an enhanced active area.     

Magnetization dynamics in thin films and multilayers

The behavior of spin waves is influenced by essentially all the parameters which characterize a magnetic material – exchange interactions, anisotropy, surface effects, dipolar interactions, phase transitions and imperfections. Thus measurements of spin wave frequencies can give important information on characterizing different magnetic materials and structures. In this paper we outline the major results and calculational methods for long-wavelength spin waves in thin films and multilayers. While the primary attention is on ferromagnet-based structures, long-wavelength spin waves in antiferromagnets are also discussed. We indicate how particular measurements of spin wave frequencies can be used to extract the fundamental parameters of the different structures.     

Preparation and study of silver added La0.67Ca0.33MnO3 film

La_0.67Ca_0.33MnO₃ (LCMO) and Ag admixed La_0.67Ca_0.33MnO₃ (Ag-LCMO) polycrystalline films have been prepared on SrTiO₃ single crystal (100) substrates by ultrasonic spray pyrolysis technique. These films are characterized using XRD, SEM, and temperature dependence of resistivity (ρ-T) and ac susceptibility (χ-T). The films are having cubic structure with lattice parameters as 3.890 and 3.885 Å for LCMO and Ag-LCMO films, respectively. The peek in ρ-T curve (T_p) and the ferromagnetic transition temperature (T_C) for the Ag-LCMO film is higher than that of LCMO film. The stability of both the films was tested by repeated measurements of its characteristics over a period of one week after several thermal cycling from room temperature to 77 K. In the LCMO film, the peak in the ρ-T curve (T_p) is found to shift towards lower value and conduction noise of the film increases in the subsequent measurements. In the case of Ag-LCMO the value of T_p, T_C and conduction noise of the film did not change even after several measurements. Silver segregating at the grain boundaries in Ag-LCMO polycrystalline film seems to be responsible for improving the characteristics of Ag-LCMO films.     

In-plane magnetic anisotropies in Ni/FeMn and Ni90Fe10/FeMn exchange biased bilayers

The in-plane magnetic anisotropy in Ni/FeMn and Ni₉₀Fe₁₀/FeMn exchange-biased bilayers prepared by co-evaporation under molecular beam epitaxy conditions is investigated employing longitudinal magneto-optical Kerr effect (MOKE) and ferromagnetic resonance (FMR). The exchange anisotropy was induced by a magnetic field cooling immediately after the deposition of the bilayers. Besides the induced term, the presence of an additional uniaxial anisotropy in the FM layers was detected both by MOKE and FMR, and the characteristic directions of these two anisotropy terms are not coincident. The interplay between the anisotropy contributions is discussed considering micromagnetic simulations and the in-plane resonance condition for different magnetic field orientation. X-ray diffraction, X-ray photoelectron spectroscopy, and Mössbauer spectroscopy were used to complement the characterization of the samples.     

Observation of a tunneling magnetoresistance effect in magnetic tunneling junctions with a high resistance ferromagnetic oxide Fe2⋅5Mn0⋅5O4 electrode

A high resistance ferromagnetic oxide Fe_2⋅5Mn_0⋅5O₄ (FMO) property as a novel spin injector was investigated with a structure of a magnetic tunneling junction (MTJ) composed of FMO/Al-O/Ni₈₀Fe₂₀, in order to reduce an impedance mismatch problem on molecular spintronics. A tunneling magnetoresistance (TMR) effect in the MTJs was observed. The maximum TMR ratio observed in the MTJs was approximately 0.85% at room temperature (RT), and the spin-polarization of FMO was estimated to be at least 0.94% at RT.     

Graphite nanosheets doped with Fe, Ni, and N, synthesized in one step, and their unique magnetic performance

Graphite nanosheets (GNs) doped with N, Fe, or Ni were synthesized by pyrolysis of metal tetrapyridinoporphyrazine (MPTpz, M=Fe²⁺, and Ni²⁺) and a mixture of MPTpzs in a chemical vapor deposition furnace. The products obtained were characterized by scanning and transmission electron microscopy, and X-ray photoelectron spectroscopy. The magnetic properties of the GNs obtained were investigated at room temperature using a vibrating sample magnetometer with an applied field of −10 000-10 000 Gs. The results show the GNs obtained are terrace-like and ultra-thin, with very high aspect ratio. Fe, Ni and N atoms have been doped to the GNs successfully. There are two types of N atom that are introduced into pure carbon systems: pyrinidic and graphitic N atoms. The GNs obtained exhibit ferromagnetic behavior at room temperature. Sample S1, obtained by pyrolysis of a mixture of MPTpzs (M=Fe²⁺ and Ni²⁺), have the highest coercivity force. The saturation magnetization (M_s), remanent magnetization (M_r), and coercivity (H_c) values of sample S1 are 24.51 emu g⁻¹, 3.95 emu g⁻¹, and 207.34 Gs, respectively.     

Enhancement of magnetic coercivity in Fe/Mn and Co/Mn bilayers

The dependence of the coercive field and saturated magnetization on the interfacial width is studied to understand the driving mechanism of the coercive enhancement in Fe/Mn and Co/Mn bilayers. We establish a controlled annealing procedure to reveal the origin of this enhancement. Using a model, we reveal that the full interfacial width plays a keyrole, and that no Mn based finite size effects drive the mechanism. We show that this mechanism is common to both type of bilayers.     

Magnetic reversal mechanism in strong perpendicular magnetic anisotropic CoPt/AlN multilayer film

Magnetic reversal mechanism of the Sub/AlN5 nm/[CoPt2 nm/AlN5 nm]₅ nano multilayer film, which shows strong perpendicular magnetic anisotropy (K_u=6.7×10⁶ erg/cm³), has been studied. The angle-dependent magnetic hysteresis loops of this highly perpendicular anisotropic CoPt/AlN multilayer film were measured in the present work, applying a magnetic field along different angles φ with respect to the film normal. It demonstrates that the magnetic reversal of the CoPt ultrathin layers in the CoPt/AlN multilayer film is occurred by the reversible magnetization rotation and the irreversible displacement of domain walls. The φ-dependent part of coercive field is resulted from the internal stress according to the Kondorsky and Kersten model. The φ-independent part of coercive field implies some random and isotropy pinning centers (e.g., vacancies, dislocations, grain boundaries) in the ultrathin CoPt layers. Our work is useful for coercivity control of metal/ceramics layered structures, in particular the perpendicular magnetic tunneling junctions.     

Structure-related infrared optical properties of BaTiO3 thin films grown on Pt/Ti/SiO2/Si substrates

BaTiO₃ thin films with different thickness have been grown on Pt/Ti/SiO₂/Si substrates by a modified sol-gel method. X-ray diffraction analyses show that the BaTiO₃ thin films are polycrystalline. The crystalline quality of the films is improved with increasing thickness. The infrared optical properties of the BaTiO₃ thin films have been investigated using an infrared spectroscopic ellipsometry in the wave number range of 800-4000 cm⁻¹ (2.5-12.5 μm). By fitting the measured pseudodielectric functions with a three-phase model (Air/BaTiO₃/Pt), and a derived classical dispersion relation for the thin films, the optical constants and thicknesses of the thin films have been simultaneously obtained. The refractive index of the BaTiO₃ thin films increases and on the other hand, the extinction coefficient does not change with increasing thickness in the entirely measured wave number range. The dependence of the refractive index on the film thickness has been discussed in detail and was mainly due to both the crystalline quality of the films and packing density. Finally, the absorption coefficient was calculated in the infrared region for applications in the pyroelectric IR detectors.     

Rapid initiation of reactions in Al/Ni multilayers with nanoscale layering

Research into nanoenergetic materials is enabling new capabilities for controlling exothermic reaction rates and energy output, as well as new methods for integrating these materials with conventional electronics fabrication techniques. Many reactions produce primarily heat, and in some cases it is desirable to increase the rate of heat release beyond what is typically observed. Here we investigate the Al-Ni intermetallic reaction, which normally propagates across films or foils at rates lower than 10 m/s. However, models and experiments indicate that local heating rates can be very high (10⁷ K/s), and uniform heating of such a multilayer film can lead to a rapid, thermally explosive type of reaction. With the hopes of using a device to transduce electrical energy to kinetic energy of a flyer plate in the timescale of 100's of nanoseconds, we have incorporated a Ni/Al nanolayer film that locally heats upon application of a large electrical current. We observed flyer plate velocities in the 2-6 km/s range, corresponding to 4-36 kJ/g in terms of specific kinetic energy. Several samples containing Ni/Al films with different bilayer thicknesses were tested, and many produced additional kinetic energy in the 1.1-2.3 kJ/g range, as would be expected from the Ni-Al intermetallic reaction. These results provide evidence that nanoscale Ni/Al layers reacted in the timescale necessary to contribute to device output.     

Orientation-dependent dielectric properties of Ba(Sn0.15Ti0.85)O3 thin films prepared by sol-gel method

The orientation-dependent dielectric properties of barium stannate titanate (Ba(Sn_0.15Ti_0.85)O₃, BTS) thin films grown on (1 0 0) LaAlO₃ single-crystal substrates through sol-gel process were investigated. The nonlinear dielectric properties of the BTS films were measured using an inter-digital capacitor (IDC). The results show that the in-plane dielectric properties of BTS films exhibited a strong sensitivity to orientation. The upward shift of Curie temperature (T_c) of the highly (1 0 0)-oriented BTS thin films is believed to be attributing to a tensile stress along the in-plane direction inside the film. A high tunability of 47.03% was obtained for the highly (1 0 0)-oriented BTS films, which is about three times larger than that of the BTS films with random orientation, measured at a frequency of 1 MHz and an applied electric field of 80 kV/cm. This work clearly reveals the highly promising potential of BTS films for application in tunable microwave devices.     

Crystallization study of sol-gel un-doped and Pd-doped TiO2 materials

Sol-gel nanostructured titania materials have been reported to have applications in areas ranging from optics via solar energy to gas sensors. In order to enhance the photocatalytic activity, there are many studies regarding the doping of titanium dioxide (TiO₂) material with either non-metals (S, C, N, P) or metals (Ag, Pt, Nd, Fe). The present work has studied some un-doped and Pd-doped sol-gel TiO₂ materials (films and gels), with various surface morphologies and structures, obtained by simultaneous gelation of both precursors Ti(OEt)₄ and Pd(acac)₂. Their structural evaluation and crystallization behavior with thermal treatment were followed by DTA/TG analysis, infrared (IR) spectroscopy, Fourier transform infrared (FTIR), spectroellipsometry (SE), X-ray diffraction (XRD) and atomic force microscope (AFM). The influence of Pd on TiO₂ crystallization for both supported and un-supported materials was studied (lattice parameters, crystallite sizes, internal microstrains). The changes in the optical properties of the TiO₂-based vitreous materials were correlated with the changes of the structure. The hydrophilic properties of the films were also connected with their structure, composition and surface morphology.     

Effect of Bi substitution on the magnetic and dielectric properties of epitaxially grown BaFe0.3Zr0.7O3−δ thin films on SrTiO3 substrates

The structural, dielectric and magnetic properties of single crystalline Ba_1−xBi_xFe_0.3Zr_0.7O_3−δ (x=0.0-0.29) thin films have been studied. The pseudotetragonal epitaxial thin films were obtained by pulsed laser-beam deposition (PLD) on (0 0 1) SrTiO₃ (STO) single-crystal substrates. The Bi substitution for the Ba ions up to an extent of x=0.18 caused a slight improvement in the leakage current properties, as well as an enhancement of the apparent dielectric constant. The saturation magnetization of the films was significantly decreased following Bi substitution. These changes were thought to be related to the increase in oxygen deficiencies in the films. The effect of the Bi substitution on the dielectric and magnetic properties was analyzed in conjunction with the change in valence value of the Fe ions.     

Structure, thermally and optically induced effects in amorphous As2Se3 films prepared by pulsed laser deposition

Thin amorphous As-Se films were prepared by pulsed laser deposition (PLD) and by classical thermal evaporation techniques. Raman spectra and optical properties (optical gap, E_g^opt, index of refraction, n, third-order non-linear susceptibility, χ⁽³⁾) of prepared films and their photo- and thermally induced changes were studied. The structure of laser deposited films was close to the corresponding bulk glasses contrary to thermal evaporated films. The composition of PLD films was practically unchanged during the process of deposition. The optically and thermally induced changes of n and of E_g^opt in PLD films are different from the changes in thermally deposited films. The differences are discussed.     

Degradation study of lubricant with cyclotriphosphazene moiety under low-energy electron impact

When subjected to low-energy electron (<20 eV) impact, A20H lubricant was found to form ammonia or phosphoric acid droplets on the surface of the disk under appropriate temperature and humidity environment. The degradation mechanism was studied by time-of-flight mass spectroscopy and X-ray photoelectron spectroscopy. The side arm (O-C₆H₄-CF₃) attached to cyclotriphosphazene moiety of A20H lubricant and the end group (CF₂CH₂OH) were found to be easily segregated at low electron dosage. PN core (CF₂CH₂OP₃N₃) breakdown occured at higher electron dosage. NH₂/PO species which were formed from the PN core breakdown could be the most probable source of the corrosive droplets.     

Comprehensive study of high-Tc interface superconductivity

Using ALL-MBE technique, we have synthesized different heterostructures consisting of an insulator La₂CuO₄ (I) and a metal La_1.56Sr_0.44CuO₄ (M) layer neither of which is superconducting by itself. The M-I bilayers were superconducting with a critical temperature T_c≈30-36 K. This highly robust phenomenon is confined within 1-2 nm from the interface and is primarily caused by the redistribution of doped holes across the interface. In this paper, we present a comprehensive study of the interface superconductivity by a range of experimental techniques including transport measurements of superconducting properties.     

A study of structural, compositional and optical properties of spray-deposited non-stoichiometric (Zn,Fe)S thin films

Non-stoichiometric ternary chalcogenides (Zn,Fe)S were prepared in the film form by pyrolytic spray deposition technique, using air/nitrogen as the carrier gas. The precursor solution comprised of ZnCl₂, FeCl₂ and thiourea. The depositions were carried out under optimum conditions of experimental parameters viz. carrier gas (air/nitrogen) flow rate, concentration of precursor constituents, nozzle substrate distance and temperature of quartz substrate. The deposited thin films were later sintered in argon at 1073 K for 120 min.The structural, compositional and optical properties of the sintered thin films were studied. X-ray diffraction studies of the thin films indicated the presence of (Zn,Fe)S solid solution with prominent cubic sphalerite phase while surface morphology as determined by scanning electron microscopy (SEM) revealed a granular structure.The chemical composition of the resulting thin films as analyzed by energy dispersive X-ray analysis (EDAX) reflected the composition of the precursor solutions from which the depositions were carried out with Fe at% values ranging from 0.4 up to 33.SEM micrographs of thin films reveal that the grain sizes of the thin films prepared using air as carrier gas and N₂ as carrier gas are in the vicinity of 300 and 150 nm, respectively.The diffuse transmittance measurements for thin films, as a function of wavelength reveal the dependence of direct optical band gap on Fe content and type of phase.     

Perpendicular anisotropy and magneto-optical Kerr effect of (Ni/Pd) multilayers

Nickel film, with total thickness t_Ni in the range 1000-2000 Å, is known to exhibit perpendicular magnetic anisotropy (PMA), if the film has been deposited at room temperature. This phenomenon is due to the magneto-elastic (ME) effect. The same is also true for the (Ni/Pd)_n multilayers, where n is the period (n≥3). In this paper, we have made two kinds of multilayers: one, which does not have a Pd cap layer, belongs to the A-group, and the other, which has, belongs to the B-group. The polar Kerr rotation θ_k, the polar Kerr ellipticity ε_k, and the figure of merit (θ_k)²R, where R is the reflectance, were measured for the two wavelengths, i.e. λ=633 and 442 nm, respectively. The effective PMA energy K_⊥ was measured from the vibrating sample magnetometer. It was found that the most favorable multilayer for the magneto-optical (MO) application exists among the A-group samples: i.e. the t_Ni=1300 Å, t_Pd=50 Å (seed layer), and n=1 sample. We obtained θ_k=−9.76 min, ε_k=−9.13 min, (θ_k)²R=1.51 (rad)² at λ=442 nm, and K_⊥=3.21×10⁶ erg/cc for this optimal multilayer. Finally, the effects of the Pd seed layer on PMA and MO are also studied.