Coherent anti-Stokes Raman scattering and normal anti-Stokes Raman scattering due to LO phonons in GaP using cw diode lasers

Coherent anti-Stokes Raman scattering (CARS) and normal anti-Stokes Raman scattering (NARS) have been measured in (001) GaP at room temperature due to the 403 cm⁻¹ LO phonons using a continuous wave (CW) 785.0 nm fixed-wavelength pump laser and a CW Stokes laser tunable in the 800-830 nm wavelength range. CARS measurements are normally made using pulsed lasers. The use of CW diode lasers allows a more accurate comparison between the measured and calculated values of the CARS signal. The pump and Stokes laser beams were linearly polarized perpendicular to each other, same as the pump and normal Stokes/anti-Stokes scattered light for the GaP sample used in this work. The pump and Stokes laser powers incident upon the GaP sample, located in the focal plane of a 20 mm effective focal length lens, were <20 and 50 mW, respectively. The diameter of the laser beams in the focal plane of the focusing lens was determined to 40±5 μm. The pump and Stokes laser beam intensities incident upon the 0.3 mm thick GaP sample were <2 and 5 kW cm², respectively. The powers of the CARS and NARS signals were measured using a Raman spectrometer. The signal output of the Raman spectrometer was calibrated using the pump laser and several neutral density filters. The Raman linewidth (full-width at half-maximum) of the LO phonons was determined to be 0.95±0.05 cm⁻¹, using the variation of the CARS signal with the wavelength of the Stokes laser. The measured powers of the CARS and NARS signals are about a factor of 5 and 1.5, respectively, smaller than those calculated from the corresponding theoretical expressions.     

Electrochemical etching of n-type 15R-SiC and 6H-SiC without UV illumination

We report the formation of porous n-type 15R- and 6H-SiC and analyze the porous layers using scanning electron microscopy, Raman scattering and X-ray diffraction (XRD). The crystal structures and the preparation conditions of porous SiC are shown to have an effect on the structural and electrical properties of the material obtained. Raman spectra of porous SiC layers have shown some specific features compared with those of bulk SiC. For the porous 15R-SiC, the semi-cylindrical structure of the porous network has been observed and the porosity is about 66%.     

Mobility as controlled by the transverse component of phonon wave vector in quantum layers at low temperatures

Without resorting to either the Kawaji’s simplified model of interaction with only two-dimensional phonons or to the equipartition approximation for the phonon distribution, the characteristics of the momentum relaxation time of the conduction electrons in a quantized surface layer for interaction with intravalley acoustic phonons have been analysed under the condition of low temperature. The scattering and the mobility characteristics thus obtained for an n-channel (1 0 0)-oriented Si inversion layer are apparently quite different from what follows in the traditional framework.     

Far-infrared dielectric functions and phonon spectra of alloys determined by spectroscopic ellipsometry

We have used spectroscopic ellipsometry to determine the complex dielectric function of a series of ternary Be_xZn_1−xTe thin films grown by molecular beam epitaxy. The II–VI semiconductor alloys were grown on InP substrates that had an InGaAs buffer layer. After the growth, X-ray diffraction experiments were performed in order to determine the alloy concentration. A standard inversion technique was used to obtain the dielectric functions from the measured ellipsometric spectra, obtained between 2000 nm (5000 cm⁻¹) and 40,000 nm (250 cm⁻¹). By modelling the dielectric function as a collection of oscillators, representing longitudinal and transverse optical phonons of the Be_xZn_1−xTe lattice, we were able to recover the phonon spectra for this alloy system. It is argued that the additional phonon modes that are obtained from ellipsometry are best understood from the recently-proposed percolation model.     

X-ray diffraction, Raman spectrum and magnetic susceptibility of the magnetic semiconductor Cu2FeSnS4

In an attempt to resolve the crystal structure and the corresponding space group of the magnetic semiconductor Cu₂FeSnS₄, samples of this compound were studied by X-ray diffraction, differential thermal analysis, Raman scattering and magnetic susceptibility. It was found that at room temperature this compound prepared by a careful crystal growth process, including annealing to equilibrium at a suitable temperature followed by slow cooling of the samples to 300 K, crystallizes in a tetragonal structure with space group .     

Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy

We present the forward Raman scattering study of zone-centre optical phonon anisotropy in short-period GaAs/AlAs superlattices. Experiments were performed on specially prepared superlattice structures having anti-reflection dielectric coatings and removed substrates. The experimental data are compared with the angular dispersion of superlattice optical phonons calculated within the dielectric susceptibility model. We have found a good agreement between the experimental data and the calculations taking into account interface disorder. Received 9 September 1998 and Received in final form 22 October 1998     

The pressure response of Raman active phonon modes of Tm3Al5O12

Abstract

We present the Raman spectrum of Tm₃Al₅O₁₂ single crystal and its pressure dependence for hydrostatic pressure up to 11GPa and room temperature. Tm₃Al₅O₁₂ belongs to the crystal family of rare earth garnets (Re₃A1₂(AlO₄)₃, Re: Gd, Tb, Dy, Er,…), which crystallize in the body-centered cubic lattice and contains eight molecular units in the conventional unit cell, Group theory predicts 25 Raman active modes for these compounds, while experimentally are observed 15 modes. As crystal volume decreases all Raman peaks exhibit pressure coefficients varying from 0.7 to 5.6cm^?1/ GPa. A large part of the vibrational spectra of these compounds could be explained taking into account the vibrational properties of molecular subunits, namely AlO₄.     

The effect of a strong magnetic field on the binding energy and the photoionization process in quantum-well wires

Within the effective-mass approximation, we have investigated the influence of a strong magnetic field on the ground state binding energy and the photon energy dependence of the photoionization cross-section of a shallow donor impurity in a quasi-one-dimensional rectangular quantum wire with infinite and finite potential barriers, using a variational approach. It is found that the binding energy and the photoionization cross-section as a function of photon energy were drastically dependent on the sizes of the wire, the potential well heights and the applied magnetic field.     

Percolation picture for long wavelength phonons in zinc blende alloys: application to GaInAs

We propose a ‘one bond→two modes’ model for the long wavelength optical phonons in random zinc-blende A_xB_1−xC ternary alloys, based on the percolation site theory. Our model takes into account the ‘fractal→normal’ object transition, which goes with the ‘dispersion→continuum’ topology transition at the percolation thresholds of the A-C and B-C bonds. We first introduce the basics of our model in the case of Zn_1−xBe_x(Se,Te) mixed crystals, whose parent binaries display a high contrast in the bond stiffness, which enhances the percolation effects. We then focus our study on standard systems, which display a much weaker contrast in the bond stiffness. The multi-phonon behavior of GaInAs alloys is re-examined in the light of the percolation model, with much success.     

Measurement of the absolute Raman scattering cross section of the 1584‐cm−1 band of benzenethiol and the surface‐enhanced Raman scattering cross section enhancement factor for femtosecond laser‐nanostructured substrates

The absolute Raman scattering cross section (σ_RS) for the 1584‐cm⁻¹ band of benzenethiol at 897 nm (1.383 eV) has been measured to be 8.9 ± 1.8 × 10⁻³⁰ cm² using a 785‐nm pump laser. A temperature‐controlled, small‐cavity blackbody source was used to calibrate the signal output of the Raman spectrometer. We also measured the absolute surface‐enhanced Raman scattering cross section (σ_SERS) of benzenethiol adsorbed onto a silver‐coated, femtosecond laser‐nanostructured substrate. Using the measured values of 8.9 ± 1.8 × 10⁻³⁰ and 6.6 ± 1.3 × 10⁻²⁴ cm² for σ_RS and σ_SERS respectively, we calculate an average cross‐section enhancement factor (EF) of 0.8 ± 0.3 × 10⁶. Copyright © 2009 John Wiley & Sons, Ltd.     

Chemical composition of matrix-embedded ternary II–VI nanocrystals derived from first- and second-order Raman spectra

A one- and multiphonon Raman scattering study is performed for an extensive set of CdS_1–xSe_x, Cd_1–yZn_yS, Cd_1–yZn_ySe, and CdSe_1–xTe_x nanocrystals to investigate the applicability of first- and second-order Raman spectra for the determination of the matrix-embedded ternary nanocrystal composition. For one-mode ternary systems both the LO and 2LO phonon frequencies in the Raman spectra are shown to be a good measure of the nanocrystal composition. For two-mode systems, the approaches based on the difference of the LO phonon frequencies (first-order Raman spectra) or double LO overtone and combination tone frequencies (second-order Raman spectra) as well as on the LO phonon band intensity ratios are analysed. The weak electron–phonon coupling in the II–VI nanocrystals and the polaron constant values for the nanocrystal sublattices are discussed.     

Study of one-mode,two-mode and three-mode phonon behavior in mixed zinc blende alloys

In this paper, we put forth a microscopic interpretation of the characteristics of vibrational spectra of zinc blende semiconductor alloys arising due to either difference in masses or contrast in bond lengths. Previous Raman and infrared experiments have helped in identifying two mode vibrational behaviors in mixed systems of Zn_1−xMg_xSe and Zn_1−xMg_xTe in contrast to the one-mode behavior in Zn_1−xMg_xS. Our lattice dynamics computations have elucidated that in addition to the mass of the anion, bond length anomalies, energy separation between the two sets of optical modes, and the magnitudes of the scattering cross section play an important role in the observance of one mode behavior in the S system, two mode behavior for the whole of the composition range in the Se and Te systems, and an additional Be–Te like vibrational doublet in case of Zn_1−xBe_xTe. Our calculations incorporate the treatment of disorder through a supercell approach. The calculated lattice constants for different concentrations, the bimodal bond length distribution, as well as the phonon frequencies at the Brillouin zone centre are in good agreement with the available experimental data.     

Raman spectra of the orthorhombic semiconductor compound Cu2SnTe3

The optical phonon spectrum of the semiconductor Cu₂SnTe₃, that crystallizes in the orthorhombic structure with space group Imm2 (), have been studied by measuring unpolarized Raman scattering between 10 and 300 K. The experimental frequencies of the phonon modes observed were compared to those calculated by using simplified lattice dynamical models reported in the literature. From combined analysis of these results together with the factor group analysis of the zone-center vibrational modes, valuable information about these modes was obtained and their possible symmetry was assigned. A₁ modes at 71, 123, 167, 176 and 190 cm⁻¹; A₂ modes 115 and 131 cm⁻¹; B₁ modes at 76, 142 and 152 cm⁻¹; B₂ modes at 89, 100 and 206 cm⁻¹; a overtone at 246 cm⁻¹, and combinations at 218, 270 and 292 cm⁻¹; have been observed in this compound.     

Multi-phonon capture of charge carriers by dislocation kinks in semiconductors

In view of the problem of recombination-enhanced motion of dislocations in semiconductors, we studied the thermal capture of an electron by a smooth dislocation kink. Multi-phonon capture becomes possible due to localization of the carrier on the kink. The localized state on the smooth kink is studied in the deformation potential approximation. In this case the potential created by the kink is described by Poschl-Teller function, which enables to find the analytical expressions for the eigenstates and the corresponding wave functions. With the use of the ground state wave function we find the multi-phonon capture cross-section for two limiting temperature cases, corresponding to the thermally activated and quantum transitions between vibronic terms.     

Raman scattering of Zn doped CuGaS2 layers grown by vapor phase epitaxy

Raman spectra for non-site-selectively and site-selectively Zn-doped CuGaS₂ layers grown by vapor phase epitaxy (VPE) were investigated. Although an appearance of characteristic Raman line(s) related with the doped Zn atom was not seen, an enhancement of the Raman intensity ratio of the highest LO mode to the A₁ mode (I_LO/I_A1) was observed. The site-selectively Zn-doped layers with p-type conductivity exhibited larger I_LO/I_A1 ratio compared to those with n-type conductivity. The observed correlation between the I_LO/I_A1 ratio and the peak energy of the photoluminescence characteristic for Zn-doped p-type samples (L emission) suggests that the enhancement of I_LO/I_A1 is due to the increase of Zn atom substituting Ga site (Zn_Ga) which is acting as an acceptor.     

Raman spectra of samarium-fullerene intercalation compounds

Samarium-fullerene intercalation compounds of nominal composition Sm_xC₆₀ (x=1,2,…,6) have been synthesized by a solid-state reaction method. We obtain a Sm_2.75C₆₀ superconducting phase with orthogonal structure and a Sm₆C₆₀ phase with body-centered cubic structure. The broadening and weakening of Raman peaks of the Sm_xC₆₀ compounds are due to the distortion of C₆₀ and electron-phonon interaction. The Raman measurements reveal that the distortion of C₆₀ decrease in Sm_xC₆₀ (x=3,4,5) exposed to air, although the fulleride solids have transformed into an amorphous state. The Raman results also show that the distortion of C₆₀ is still very large in the Sm₆C₆₀ exposed to air, or the C₆₀ molecules have been destroyed and become some amorphous carbide.