图形衬底对多周期InGaAs量子点自组装生长的影响

量子点器件技术广泛应用于量子计算和光电器件上.成核位置的均匀性、有序性和尺寸一致性,可以有效提高光电器件性能.为了实现阵列量子点的可控性,本文采用湿法刻蚀制备图形化衬底,理论上解释了铟原子在图形化衬底上成核现象,产生有序的量子点分布特征,发现图形衬底的缺陷诱导在平台边缘和沟壑边缘成核,形成较大的量子点.在Stranski-Krastanow模式下图形衬底制备多周期量子点,发现多周期生长可以弱化台阶结构对量子点分布的限制作用.     

Magnetic and optical properties of self-organized InMnAs quantum dots

Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown on high resistivity (1 0 0) p-type GaAs substrates by molecular beam epitaxy (MBE). The presence of ferromagnetic structure was confirmed in the InMnAs diluted magnetic quantum dots. The ten layers of self-assembled InMnAs quantum dots were found to be semiconducting, and have ferromagnetic ordering with a Curie temperature, T_C=80 K. It is likely that the ferromagnetic exchange coupling of sample with T_C=80 K is hole mediated resulting in Mn substituting In and is due to the bound magnetic polarons co-existing in the system. PL emission spectra of InMnAs samples grown at temperature of 275, 260 and 240 °C show that the interband transition peak centered at 1.31 eV coming from the InMnAs quantum dot blueshifts because of the strong confinement effects with increasing growth temperature.     

基于InP/ZnS核壳结构量子点的色转换层设计及制作

提出了采用环境友好型InP/ZnS核壳结构量子点材料制备匹配蓝光Micro-LED阵列的量子点色转换层以实现Micro-LED阵列器件全彩化的技术方案。通过采用倒置式量子点色转换层方案,实现了InP/ZnS量子点材料和Micro-LED阵列的非直接接触,从而可以缓解LED中热量聚集导致的量子点材料发光主波长偏移、半峰宽展宽以及发光效率衰减等问题。量子点色转换层中内嵌PDMS聚合物柔性膜层,可以消除咖啡环效应,同时,色转换层中内嵌飞秒激光图案化处理的500 nm长波通滤光膜层,可以抑制蓝光从非蓝色像素单元出射。最后,实验制备了像素单元中心间距90μm的16×16 InP/ZnS量子点色转换层。该设计可以实现基于蓝光Micro-LED阵列的全彩色Micro-LED显示器件的制备,并且该制备方法可以降低全彩色Micro-LED阵列显示器件的制备成本。     

Formation and ordering of epitaxial quantum dots

Single quantum dots (QDs) have great potential as building blocks for quantum information processing devices. However, one of the major difficulties in the fabrication of such devices is the placement of a single dot at a pre-determined position in the device structure, for example, in the centre of a photonic cavity. In this article we review some recent investigations in the site-controlled growth of InAs QDs on GaAs by molecular beam epitaxy. The method we use is ex-situ patterning of the GaAs substrate by electron beam lithography and conventional wet or dry etching techniques to form shallow pits in the surface which then determine the nucleation site of an InAs dot. This method is easily scalable and can be incorporated with marker structures to enable simple post-growth lithographic alignment of devices to each site-controlled dot. We demonstrate good site-control for arrays with up to 10 micron spacing between patterned sites, with no dots nucleating between the sites. We discuss the mechanism and the effect of pattern size, InAs deposition amount and growth conditions on this site-control method. Finally we discuss the photoluminescence from these dots and highlight the remaining challenges for this technique. To cite this article: P. Atkinson et al., C. R. Physique 9 (2008).     

Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates

GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.     

Ge quantum dot molecules and crystals: Preparation and properties

Templated self-organization has been used to prepare two-dimensional arrays as well as three-dimensional quantum dot crystals (QDC) containing Ge dots in a Si host crystal. Si(1 0 0) substrates have been patterned with two-dimensional hole gratings using extreme ultra-violet interference lithography (EUV-IL) and reactive ion etching. The EUV-IL was realized by multiple beam diffraction using Cr gratings on SiN_x membranes fabricated by e-beam lithography. Si/Ge overgrowth was performed by molecular beam epitaxy. The impact of the microscopic shape and size of the prepattern using the mask design and the EUV-IL exposure dose as parameters on the Ge dot nucleation has been studied with atomic force microscopy, transmission electron microscopy and photoluminescence measurements. Adjusting the growth parameters in multiple layer deposition the initial two-dimensional configuration was transferred into three-dimensional QDC.     

Nanostructures with Ge–Si quantum dots for infrared photodetectors

In this paper questions of optimization of growth conditions in the method of molecular beam epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As a model material system for theoretical investigations, heterostructures with germanium-silicon quantum dots on the silicon surface are chosen. For calculations of the dependencies of quantum dots array parameters on synthesis conditions the kinetic model of growth of differently shaped quantum dots based on the general nucleation theory is proposed. The theory is improved by taking into account the change in free energy of nucleation of an island due to the formation of additional edges of islands and due to the dependence of surface energies of facets of quantum dots on the thickness of a 2D wetting layer during the Stranski–Krastanow growth. Calculations of noise and signal characteristics of infrared photodetectors based on heterostructures with quantum dots of germanium on silicon are done. Dark current in such structures caused by thermal emission and barrier tunneling of carriers, as well as detectivity of the photodetector in the approximation of limitation by generation-recombination noises are estimated. Moreover, the presence of dispersion of quantum dots by size is taken into account in the calculations of the generation-recombination noises. Results of calculations of the properties of structures with quantum dots and their dependencies on growth parameters, as well as the characteristics of quantum dot photodetectors are presented. Comparison of the estimated parameters of quantum dots ensembles and the characteristics of quantum dot photodetectors with experimental data is carried out.     

Structural imaging of a Si quantum dot: Towards combined PL and TEM characterization

Individual silicon quantum dots were fabricated by electron-beam lithography, plasma etching and a two-step oxidation process. This enables photoluminescence (PL) from individual dots at various temperatures to be detected and spectrally resolved using a sensitive charge-coupled device camera-imaging system, as reported previously. The regular array-like arrangement of oxidized pillars containing individual nanocrystals, in principle, enables combined transmission electron microscopy (TEM) and low-temperature PL characterization of the same Si quantum dot. To this end, a technique employing focused ion beam was developed for preparation of the pillar/nanocrystal of interest for TEM. It is shown that silicon quantum dots of several nanometers in size can be characterized using such a method.     

Raman scattering of Ge dot superlattices

Self-organised Ge dot superlattices grown by molecular beam epitaxy of Ge and Si layers utilizing Stranski-Krastanov growth mode were investigated by Raman spectroscopy. An average size of Ge quantum dots was obtained from transmission electron microscopy measurements. The strain and interdiffusion of Ge and Si atoms in Ge quantum dots were estimated from the analysis of frequency positions of optical phonons observed in the Raman spectra. Raman scattering by folded longitudinal acoustic phonons in the Ge dot superlattices was observed and explained using of elastic continuum theory. Received 25 January 2000     

Relaxation of mechanical stresses in an array of Ge quantum dots obtained in Si

Raman scattering on optical phonons in Si/Ge/Si structures with Ge quantum dots grown by molecular beam epitaxy at low temperatures 200–300°C has been investigated. A pseudomorphic state of an array of Ge quantum dots to a Si matrix with an ideally sharp interface has been obtained. Features associated with the inelastic relaxation of mechanical stresses have been revealed in the Raman spectrum. Two mechanisms of stress relaxation are separated. It has been shown that the spectrum of the electronic states of the array differs significantly from the set of the discrete levels of a single quantum dot, because the relaxation is inhomogeneous.     

离子束溅射自组装Ge/Si量子点生长的演变

采用离子束溅射技术,通过改变Ge的沉积量,在n型Si(100)衬底上自组装生长了一系列Ge量子点样品. 利用AFM和Raman光谱对样品表面形貌和结构进行表征,系统地研究了Ge量子点形貌、密度、尺寸大小以及Ge的结晶性和量子点中组分等随Ge沉积量的演变规律. 结果表明:Ge层从二维薄层向三维岛过渡过程中,没有观察到传统的由金字塔形向圆顶形量子点过渡,而是直接呈圆顶形生长;且随着Ge沉积量的增加,量子点密度先增大后减小,Ge的结晶性增强同时Ge/Si互混加剧,量子点中Si的组分增加. 关键词： 离子束溅射 量子点 表面形貌 Raman光谱     

Antiresonance of electron tunneling through a quantum dot array

Electronic transport through a one-dimensional quantum dot array is theoretically studied. In such a system both electron reservoirs of continuum states couple with the individual component quantum dots of the array arbitrarily. When there are some dangling quantum dots in the array outside the dot(s) contacting the leads, the electron tunneling through the quantum dot array is wholly forbidden if the electron energy is just equal to the molecular energy levels of the dangling quantum dots, which is called as antiresonance of electron tunneling. Accordingly, when the chemical potential of the reservoir electrons is aligned with the electron levels of all quantum dots, the linear conductance at zero temperature vanishes if there are odd number dangling quantum dots; Otherwise, it is equal to 2e²/h due to resonant tunneling if the total number of quantum dots in the array is odd. This odd–even parity is independent of the interdot and the lead–dot coupling strength.     

GaAs均匀点状结构的分子束外延图形生长

报道了在(311)A腐蚀图形衬底上，用分子束外延(MBE)生长高度规则的三种点状结构的实验研究.样品表面的原子力显微镜和剖面的扫描电子显微镜测试结果表明，在不同尺寸的方形凹面腐蚀图形区域，原凹面之间形成了沿［233］晶向不完全和完全收缩的尖角形点状外延结构；而在方形台面腐蚀图形区域，台顶面之间形成了沿［233］方向收缩的脊形点状结构.分析认为这些均匀有序的三角形点状结构的形成是由非平面(311)A衬底上生长各向异性导致的必然结果，而构成这些点结构的晶面取向与原图形的取向相关.低温阴极荧光谱测试结果清晰地表 关键词：     

Mesoscopic to universal crossover of the transmission phase of multilevel quantum dots

Transmission phase alpha measurements of many-electron quantum dots (small mean level spacing delta) revealed universal phase lapses by pi between consecutive resonances. In contrast, for dots with only a few electrons (large delta), the appearance or not of a phase lapse depends on the dot parameters. We show that a model of a multilevel quantum dot with local Coulomb interactions and arbitrary level-lead couplings reproduces the generic features of the observed behavior. The universal behavior of alpha for small delta follows from Fano-type antiresonances of the renormalized single-particle levels.     

Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots

We investigate the temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots systematically. As temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. For ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift. We use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra. It is confirmed that carrier-phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots.     

Photoluminescence of single quantum wires and quantum dots

The results of a study into the photoluminescence spectra of a set of quantum dots based on GaAs enclosed in AlGaAs nanowires are presented. The steady state and time resolved spectra of photoluminescence under optical excitation both from an array of quantum wires/dots and a single quantum wire/dot have been measured. In the photoluminescence spectra of single quantum dots, emission lines of excitons, biexcitons and tritons have been found. The binding energy of the biexciton in the studied structures was deduced to be 8 meV.     

Controlled positioning of self-assembled InAs quantum dots on (1 1 0) GaAs

We report on a new approach for positioning of self-assembled InAs quantum dots on (1 1 0) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control position and ordering of the quantum dots with epitaxial precision as well as size and size homogeneity. Furthermore, photoluminescence investigations on dot ensembles and on single dots confirm the high homogeneity and the excellent optical quality of the quantum dots fabricated.     

Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering

The emission of light in the blue-green region from cubic InxGa1-xN alloys grown by molecular beam epitaxy is observed at room temperature and 30 K. By using selective resonant Raman spectroscopy (RRS) we demonstrate that the emission is due to quantum confinement effects taking place in phase-separated In-rich quantum dots formed in the layers. RRS data show that the In content of the dots fluctuates across the volume of the layers. We find that dot size and alloy fluctuation determine the emission wavelengths.     

Morphological and luminescent characteristics of GaN dots deposited on AlN by alternate supply of TMG and NH3

GaN dots were deposited on AlN underlayers by alternate supply of trimethylgallium (TMG) and ammonia (NH₃) in an inductively heated quartz reactor operated at atmospheric pressure. Various growth parameters including deposition temperature, TMG admittance and pulse time between TMG and NH₃ exposures were proposed to investigate the influence of growth parameters on the size distribution of GaN dots. It appears that GaN dots with uniform size distribution can be achieved under certain growth conditions. Based on the study of atomic force microscopy (AFM), high deposition temperature was found to be in favor of forming large GaN dots with small dot density. Decrement of TMG flow rate or reduction in the number of growth cycle tends to enable the formation of GaN dots with small dot sizes. The results of room temperature (RT) cathodoluminescence (CL) measurements of the GaN dots exhibit an emission peak at 3.735 eV. A remarkable blue shift of GaN dot emission was observed by reduced temperature photoluminescence (PL) measurements.     

基于重叠栅工艺的硅量子点阵列的制备与调控

利用半导体量子点阵列结构实现近邻耦合是规模化扩展自旋量子比特的主要方案之一.随着量子点数目的增加,量子点阵列器件的制作工艺及参数调控均愈加复杂.本文介绍了一种重叠栅工艺结构,利用多层相互重叠且具有不同功能的栅极定义量子点,制作出结构紧凑、调控性好的量子点阵列器件,解决了工艺扩展的难题.此外,本文发展了一套高效可靠的调控方法,按顺序逐个添加量子点并建立虚拟电极,实现了对量子点参数的独立控制,并且能够高效且独立地调控各量子点中的电子数目,克服了大规模量子点阵列中电压参数配置的困难.这些方法为未来实现大规模自旋比特阵列提供了一种标准化的方案.