Transport in suspended graphene

Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm²/V s, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the substrate-free experiments done in the diffusive regime are consistent with our theory and verify many of our earlier predictions including (i) removal of the substrate will increase mobility since most of the charged impurities are in the substrate, (ii) the minimum conductivity is not universal, but depends on impurity concentration with cleaner samples having a higher minimum conductivity. We further argue that experiments on suspended graphene put strong constraints on the two parameters involved in our theory, namely, the charged impurity concentration and d, the typical distance of a charged impurity from the graphene sheet. The recent experiments on suspended graphene indicate a residual impurity density of which are presumably stuck to the graphene interface, compared to impurity densities of for graphene on SiO₂ substrate. Transport experiments can therefore be used as a spectroscopic tool to identify the properties of the remaining impurities in suspended graphene.     

Comparison of two models for phonon assisted tunneling field enhanced emission from defects in Ge measured by DLTS

Deep Level Transient Spectroscopy (DLTS) was used to measure the field enhanced emission rate from a defect introduced in n-type Ge. The defect was introduced through low energy (±80 eV) inductively coupled plasma (ICP) etching using Ar. The defect, named EP_0.31, had an energy level 0.31 eV below the conduction band. Models of Pons and Makram-Ebeid (1979) [2] and Ganichev and Prettl (1997) [3], which describe emission due to phonon assisted tunneling, were fitted to the observed electric field dependence of the emission rate. The model of Pons and Makram-Ebeid fitted the measured emission rate more accurately than Ganichev and Prettl. However the model of Ganichev and Prettl has only two parameters, while the model of Pons and Makram-Ebeid has four. Both models showed a transition in the dominant emission mechanism from a weak electron–phonon coupling below 152.5 K to a strong electron–phonon coupling above 155 K. After the application of a χ² goodness of fit test, it was determined that the model of Pons and Makram-Ebeid describes the data well, while that of Ganichev and Prettl does not.     

Transfer efficiency in ballistic electron emission microscopy taking diffraction of emitted hot electrons into account

We have analyzed the transfer efficiency of ballistic electron emission microscopy (BEEM), taking the finite spot size of the emitted electron beam from scanning probes into account. Three-dimensional diffraction from an aperture at a surface-metal/air interface is introduced to model an effect caused by the finiteness of spot size. As a general trend, the diffraction decreases BEEM transfer efficiency. The diffraction effect increases as the spot size decreases and the air-gap distance increases. In a Au/GaAs sample, BEEM transfer efficiency markedly deteriorates down to 6% of the value derived from a conventional planar tunneling theory when a spot size of 0.2 nm, an air-gap distance of 0.6 nm, and an electron energy of 0.2 eV, measured from the bottom of the GaAs conduction band, are assumed. BEEM transfer efficiency is markedly dependent on the spot size of the emitted hot electron. This result indicates that the BEEM current depends on the spatial resolution of the scanning probe, that is, the condition of the tip apex.     

Doping effect on the carrier scattering in iron-pnictide superconductors studied by charge transport

In order to reveal the role of “carrier doping” in the iron-based superconductors, we investigated the transport properties of the oxygen-deficient iron-arsenides LnFeAsO_1−y (Ln=La, Ce, Pr and Nd) over a wide doping range. We found that the effect of “doping” in this system is mainly on the carrier scattering rather than carrier density, quite distinct from that in high-T_c cuprates. In the case of La system with lower T_c, the low temperature resistivity is dominated by T² term and fairly large magnetoresistance is observed. On the other hand, in the Nd system with higher T_c, carriers are subject to stronger scattering showing nearly T-linear resistivity and small magnetoresistance. Such strong scattering appears intimately correlated with high-T_c superconductivity in the iron-based system.     

Fabrication and transformation of dense SnO2 via laser ablation condensation

Dense SnO₂ nanocondensates with fluorite-type-related structures have been synthesized via severe heating-cooling under energetic Nd-YAG laser pulse irradiation of the Sn target in oxygen ambient. Transmission electron microscopic observations indicated that the fluorite type transformed in a martensitic manner into a baddeleyite-type structure with accompanied dislocations, twinning, commensurate shearing and shape change. The Pa3¯-modified fluorite-type structure was hardly observed possibly due to its transformation into α-PbO₂ type and then rutile-type structures in the dynamic process.     

Drude's model calculation rule on electrical transport in Sb-doped SnO2 thin films, deposited via sol-gel

The evaluation of free carrier concentration based on Drude's theory can be performed by the use of optical transmittance in the range 800-2000 nm (near infrared) for Sb-doped SnO₂ thin films. In this article, we estimate the free carrier concentration for these films, which are deposited via sol-gel dip-coating. At approximately 900 nm, there is a separation among transmittance curves of doped and undoped samples. The plasma resonance phenomena approach leads to free carrier concentration of about 5×10²⁰ cm⁻³. The increase in the Sb concentration increases the film conductivity; however, the magnitude of measured resistivity is still very high. The only way to combine such a high free carrier concentration with a rather low conductivity is to have a very low mobility. It becomes possible when the crystallite dimensions are taken into account. We obtain grains with 5 nm of average size by estimating the grain size from X-ray diffraction data, and by using line broadening in the diffraction pattern. The low conductivity is due to very intense scattering at the grain boundary, which is created by the presence of a large amount of nanoscopic crystallites. Such a result is in accordance with X-ray photoemission spectroscopy data that pointed to Sb incorporation proportional to the free electron concentration, evaluated according to Drude's model.     

Chemical reactions in cracks of aluminum crystals: Generation of hydrogen from water

Pure hydrogen is generated from water molecules which are dissociated by specific aluminum particles called activated Al powder. Reaction mechanism of Al atoms with H₂O molecules is investigated in micro-cracks of Al crystals. It becomes obvious that hydrogen atoms exist in Al crystal mainly in states of AlH₃ hydrides. It is concluded that virgin walls of micro-cracks right after the creation provide virtually Al radical atoms of (Al−) or (Al=) with one or two free bonds, which react with H₂O molecules via surface diffusion resulting in producing AlH₃ and eventually in producing H₂. The production of H₂ seems to be a result of micro-tribochemical reactions in cracks, which are produced by mechanical crushing of Al crystals in water; tips of cracks as stress-focused points play a major role to create AlH_3. Peculiar environments of nano-spaces in micro-cracks surrounded by reactive atoms enable us to realize unusual chemical reactions at low temperatures as exemplified in the present paper.     

Spin transport in bimetallic pentalene complexes

Spin transport in bimetallic pentalene complexes (CpM(pentalene)M′Cp;M,M′=Fe,Co,Ni) between two gold electrodes was investigated, using a Green’s function formalism under density functional theory. Variation of the metal atom species in the complexes gives a considerable change in their spin properties, with hetero-bimetallic complexes containing an odd number of electrons exhibiting spin filter behaviour. In contrast, alternation in the contact condition, whether Cp-anchoring or adducting by sulphur-gold bonds, had almost no effect on spin filter behaviour, but did lead to variation in electrical conduction. We examined suitable bimetallic pentalene complexes in order to enhance their spin filter efficiency.     

Quantum dots as scatterers in electronic transport: interference and correlations

Conductance through a system consisting of a wire with side-attached quantum dots is calculated. Such geometry of the device allows to study the coexistence of quantum interference, electron correlations and their influence on conductance. We underline the differences between ‘classical’ Fano resonance in which the resonant channel is of single-particle nature and ‘many-body’ Fano resonance with the resonant channel formed by Kondo effect. The influence of electron-electron interactions on the Fano resonance shape is also analyzed.     

Mass transport on adsorbate multilayers studied by surface plasmon polariton wave excitation

We excited surface-plasmon polariton waves (SPPW) on Cu(111) by coupling a monochromatic optical beam with a xenon multilayer thickness grating on the metal. The SPPW excitation was detected with an angle-resolved oblique-incidence reflectivity difference technique (OI-RD). The amplitude of the resonance OI-RD signal was a quadratic function of the grating modulation depth. By monitoring the decay of the resonance OI-RD signal as a function of time and temperature, we were able to study the mass transport of xenon that plays a key role in the annealing of a “rough” Xe multilayer crystalline film.     

Alternating current transport property for a two-channel interacting quantum wire

We study theoretically the alternating current (ac) transport property through a two-channel clean quantum wire of finite length in the presence of both inter-channel and intra-channel electron-electron (e-e) interactions. Using the bosonization technique and linear response theory, we have obtained analytical expressions of the ac conductance. Interestingly, the ac conductance oscillations, with two different frequencies, form a beat which governs the behavior of the transport property in the presence of inter-channel e-e interaction. This result provides us with a new way to control the transport property of narrow quantum wires by engineering the Fermi velocities in the two different channels, i.e., the electron density.     

飞秒激光固体靶相互作用中超热电子的输运特性

 实验研究了在100 TW掺钛宝石超短超强脉冲激光装置上完成的飞秒激光-固体靶相互作用中超热电子的输运特性,获得了超热电子的能谱、产额、注量及超热电子在靶内输运能量沉积范围。测量结果表明:超热电子的注量和总能量随靶厚度的增加而减少,超热电子约80％的能量主要沉积在靶内的前约一个激光脉冲宽度的范围内,且能量沉积范围随激光脉冲宽度的增加而增加,这主要是静电场的影响所致。     

Solution-combusting preparation of mono-dispersed Mn3O4 nanoparticles for electrochemical applications

Manganese oxide (Mn₃O₄) nanoparticles with average diameter of 15 nm were prepared using alcohol solution of manganese chloride as starting material via a facile solution-combusting method. The flame core zone was chosen to prepare mono-dispersed and high crystalline products, which were employed to modify glassy carbon electrode and detect dopamine via cyclic voltammetry. The results exhibited excellent electrochemical sensitivity. A linear relationship between the concentration of dopamine and its oxidation peak current was obtained by differential pulse voltammetry, which will find wide application in the biological detection.     

“Heat trap”: Light-induced localized heating and thermionic electron emission from carbon nanotube arrays

Light-induced heating of a typical bulk conductor to thermionic electron emission temperatures usually requires high-power lasers. This is because of the efficient dissipation of heat generated at the illuminated spot to the surroundings, since electrical conductors are normally also good thermal conductors. We show that the situation can be drastically different in a carbon nanotube forest and a spot on the surface of the forest can be heated to above 2000 K using a low-power beam of visible light, leading to localized thermionic electron emission. This unique phenomenon may be explained by a rapid drop in thermal conductivity with increase in temperature, leading to a positive feedback that thermally isolates an island on the forest. Applications include thermoelectrics, photocathodes, optical switches, solar cells and even solar displays.     

Vacancy cluster-limited electronic transport in metallic carbon nanotube

We investigate the electronic properties of metallic (7,7) carbon nanotubes (CNT) in the presence of a variety of tetra- and hexa-vacancy defects, by using the first principles density functional theory (DFT) combined with the non-equilibrium Green’s function technique. From the view point of energetic stability large vacancies tend to split into pentagon and heptagon (5-7) defects. However, this does not preclude the presence of “holes” in the carbon nanotube by the nanoelectronic lithography technique. We show that the states linked to large vacancies hybridize with the extended states of the nanotubes to modify their band structure. As a consequence, the hole-like defects in the CNT lead to more prominent electronic transport compared to the situation in the defective CNT consisting of pentagon-heptagon pair defects. Our study suggests the possibility to improve the electronic properties of a defective carbon nanotube via morphological modifications induced by irradiation techniques.     

Spontaneous exchange-bias in Fe/Mn thin multilayers

Fe/Mn multilayers were grown by means of a molecular beam epitaxy system onto quartz substrates changing the thickness of the elemental layers. A spontaneous unidirectional anisotropy develops for thickness of Fe or Mn layer of about 35 Å. Since the samples were no subjected to field cooling treatments during or after the growth, this kind of anisotropy can be explained considering besides the exchange coupling at the Fe/Mn interface, the structural disorder due to dislocations and defects. In effect, the appearance and strength of the exchange-bias field are depending on the surface roughness of the samples and are significantly enhanced by the formation of a structure constituted by islands showing a snake-like morphology. The fitting of the angular dependence of the exchange-bias field indicates that the associated anisotropy is due to the superposition of two contributions, the principal one with unidirectional symmetry and the other showing uniaxial characteristics.     

Defect-induced increase in the phonon energy involved in the formation of Urbach tail in Cu-ternaries

From a combined analysis of the stoichiometric composition and Urbach tail in samples of CuInSe₂, CuInTe₂, and CuGaTe₂ of the I-III-VI₂ family of chalcopyrite semiconductors, it is found that the energy hν_p involved in the electron/exciton-phonon interaction is a linear function of a parameter Δz which is the sum of the deviations from ideal molecularity Δx and anion to cation ratio Δy. It gives evidence that in the copper ternaries hν_p is associated to the structural defects caused by cation-cation, cation-anion, and other intrinsic disorders. The high value of hν_p found in the studied samples, higher than the highest optical mode, is shown to come from the contribution of the additional phonon energy due to structural defects. This is in agreement with recently proposed models of the temperature dependence of the Urbach energy.     

Temperature dependent dc and ac electrical transport properties of the composite of a polyaniline nanorod with copper chloride

We have prepared the composite of polyaniline nanorods with copper chloride by chemical oxidative polymerization of aniline. Introduction of copper chloride in polyaniline significantly increases the conductivity of the nanocomposite. Temperature dependence of resistivity for our sample is best fitted with the quasi-one-dimensional hopping model and also the tunneling model. Negative magnetoconductivity is obtained for the samples at room temperature. Temperature variation of ac conductivity can be explained in terms of correlated barrier hopping model. Frequency dependence of the real part of impedance is explained by the Maxwell-Wagner capacitor model. Two activation behaviors are observed from the analysis of grain and grain boundary contributions.     

Far-infrared dielectric functions and phonon spectra of alloys determined by spectroscopic ellipsometry

We have used spectroscopic ellipsometry to determine the complex dielectric function of a series of ternary Be_xZn_1−xTe thin films grown by molecular beam epitaxy. The II–VI semiconductor alloys were grown on InP substrates that had an InGaAs buffer layer. After the growth, X-ray diffraction experiments were performed in order to determine the alloy concentration. A standard inversion technique was used to obtain the dielectric functions from the measured ellipsometric spectra, obtained between 2000 nm (5000 cm⁻¹) and 40,000 nm (250 cm⁻¹). By modelling the dielectric function as a collection of oscillators, representing longitudinal and transverse optical phonons of the Be_xZn_1−xTe lattice, we were able to recover the phonon spectra for this alloy system. It is argued that the additional phonon modes that are obtained from ellipsometry are best understood from the recently-proposed percolation model.