Electrical transport properties of CaMnO3 thermoelectric compound: a theoretical study

The electrical transport coefficients of anti-ferromagnetic CaMnO₃ have been investigated by density functional theory calculation within generalized gradient approximation. The calculated transport coefficients exhibit the anisotropic nature, in agreement with its electronic states. The transport property results reveal the stronger carrier transport along the O1–Mn–O1 plane within the O–Mn–O octahedron, indicating that the Mnd and O1p orbitals are mainly responsible for electrical transport. The maximum power factor values as a function of relaxation time reach 8.4×10²³ Wm⁻¹ K⁻² s⁻¹, 7.9×10²³Wm⁻¹ K⁻² s⁻¹ and 4.9×10²³ Wm⁻¹ K⁻² s⁻¹ within c, a and b direction, respectively. The dimensionless figure of merit ZTxx, ZTyy as well as ZTzz is estimated with 1.28, 0.8 and 1.37 at 1000 K, respectively.     

Low-temperature thermoelectric properties of Bi85Sb15−xNbx alloys prepared by high-press sintering

The nanocrystalline materials with the general formula Bi₈₅Sb_15−xNb_x (x=0, 0.5, 1, 2, 3) were prepared by mechanical alloying and subsequent high-pressure sintering. Their transport properties involving electrical conductivity, Seebeck coefficient and thermal conductivity have been investigated in the temperature range of 80-300 K. The absolute value of Seebeck coefficient of Bi₈₅Sb₁₃Nb₂ reaches a maximum of 161 μV/K at 105 K, which is 69% larger than that of Bi₈₅Sb₁₅ at the same temperature. The power factor and figure-of-merit are 4.45×10⁻³ WK⁻²m⁻¹ at 220 K and 1.79×10⁻³ K⁻¹ at 196 K, respectively. These results suggest that thermoelectric properties of Bi₈₅Sb₁₅ based material can be improved by Nb doping.     

The effect of (00l) crystal plane orientation on the thermoelectric properties of Bi2Te3 thin film

Highly (00l)-oriented pure Bi₂Te₃ films with in-plane layered grown columnar nanostructure have been fabricated by a simple magnetron co-sputtering method. Compared with ordinary Bi₂Te₃ film and bulk materials, the electrical conductivity and Seebeck coefficient of such films have been greatly increased simultaneously due to raised carrier mobility and electron scattering parameter, while the thermal conductivity has been decreased due to phonon scattering by grain boundaries between columnar grains and interfaces between each layers. The power factor has reached as large as 33.7 μW cm⁻¹ K⁻², and the out-of-plane thermal conductivity is reduced to 0.86 W m⁻¹ K⁻¹. Our results confirm that tailoring nanoscale structures inside thermoelectric films effectively enhances their performances.     

Pulsed laser deposition of Bi2Te3 thermoelectric films

Bi₂Te₃ is one of the most used materials for thermoelectric applications at ambient temperature. An improvement of thermoelectric performances through a suitable modification of electron and phonon transport mechanisms is predicted for low dimensional or nanostructured systems, but this requires a control of the material structure down to the nanoscale. We show that pulsed laser deposition provides control on film composition, phase and structure, necessary for a comprehension of the relationship between structure and thermoelectric properties. We have explored the role of deposition temperature, background inert gas type and pressure, laser fluence and target-to-substrate distance and we found the experimental condition ranges to obtain crystalline films containing the Bi₂Te₃ phase only, by comparing energy dispersive X-ray spectroscopy, Raman spectroscopy and X-ray diffraction analysis. Variations of substrate temperature and deposition gas pressure prove to be crucial also for the control of film morphology and crystallinity. Substrate type has no influence on film stoichiometry and crystallinity, but highly oriented growth can be achieved on mica due to van der Waals epitaxy.     

Thermoelectric properties and electronic structure of Te-doped CoSb3 compounds

Co₄Sb_12−xTe_x compounds were prepared by mechanical alloying combined with cold isostatic pressing, and the effects of Te doping on the thermoelectric properties were studied. The electronic structure of Te-doped and undoped CoSb₃ compounds has been calculated using the first-principles plane-wave pseudo-potential based on density functional theory. The experimental and calculated results show that the value of the solution limit x of Te in Co₄Sb_12−xTe_x compounds is between 0.5 and 0.7. The Fermi surface of CoSb₃ is located between the conduction band and the valence band, and its electrical resistivity decreases with increasing temperature. The density of states is mainly composed of Co 3d and Sb 5p electrons for intrinsic CoSb₃.The Fermi surface of Te-doped compounds moves to the conduction band and its electrical resistivity increases with increasing temperature, exhibiting n-type degenerated semiconductor character. Under the conditions of the experiment, the maximum value 2.67 mW/m K² of the power factor for Co₄Sb_11.7Te_0.3 is obtained at 600 K; this is about 14 times higher than that of CoSb₃.     

Electronic structure of a thermoelectric material: CsBi4Te6

We have calculated the electronic structure of CsBi₄Te₆ by means of first-principles self-consistent total-energy calculations within the local-density approximation using the full-potential linear-muffin-tin-orbital method. From our calculated electronic structure we have calculated the frequency dependent dielectric function. Our calculations shows that CsBi₄Te₆ a semiconductor with a band gap of 0.3 eV. The calculated dielectric function is very anisotropic. Our calculated density of state support the recent experiment of Chung et al. [Science 287 (2000) 1024] that CsBi₄Te₆ is a high performance thermoelectric material for low temperature applications.     

Thermoelectric properties of Bi0.9Sb0.1 prepared by high pressure

The Bi_0.9Sb_0.1 powders were prepared by mechanical alloying and then pressed under 6 GPa at different pressing temperatures. X-ray diffraction spectra showed that the single phase was formed. The nanostructure of grain was observed by bright-field imaging. Electrical conductivity, Seebeck coefficient, and thermal conductivity had been investigated in the temperature range of 80-300 K. The absolute Seebeck coefficient value of 120.3 μV/K was measured at 130 K. The figure-of-merit reached a maximum value of 0.90×10⁻³ K⁻¹ at 140 K.     

Cu addition and its role in thermoelectric properties and nanostructuring in the series compounds (InSb)nCum

We have performed a comparative investigation of the series compounds (InSb)_nCu_m to assess the roles of Cu addition on the thermoelectric properties and nanostructuring in bulk InSb. Detailed temperature dependent transport properties including electrical conductivity, the Seebeck coefficient, and thermal conductivity are presented. The Seebeck coefficients of In₂₀Sb₂₀Cu (m:n = 1:20) are increased by 13 percent in magnitude if compared to those of InSb, which is responsible for the 22 percent enhancement in the highest ZT value at 687 K. Although the magnitudes of κ_L are larger than those of InSb over the entire temperature range, a remarkable reduction in lattice thermal conductivities (κ_L) was observed with measuring temperature elevation. Such changes are mainly due to the precipitation of a large number of Cu₉In₄ nanoparticles with the size of smaller than 5 nm, dispersed in the matrix observed using high resolution transmission electron microscopy (HRTEM) images.     

Synthesis and thermoelectric properties of Mn-doped AgSbTe2 compounds

Polycrystalline p-type Ag 0.9 Sb 1.1 x Mn x Te 2.05（x = 0.05,0.10,and 0.20） compounds have been prepared by a combined process of melt-quenching and spark plasma sintering.The sample composition of Ag 0.9 Sb 1.1 x Mn x Te 2.05 has been specially designed in order to achieve the doping effect by replacing part of Sb with Mn and to present the uniformly dispersed Ag 2 Te phase in the matrix by adding insufficient Te,which is beneficial for optimizing the electrical transport properties and enhancing the phonon scattering effect.All the samples have the NaCl-type structure according to our X-ray powder diffraction analysis.After the treatment of spark plasma sintering,only the sample with x = 0.20 has a small amount of MnTe 2 impurities.The thermal analysis indicates that a tiny amount of Ag 2 Te phase exists in all these samples.The presence of the MnTe 2 impurity with high resistance and high thermal conductivity leads to the deteriorative thermoelectric performance of the sample with x = 0.20 due to the decreased electrical transport properties and the increased thermal conductivity.In contrast,the sample with x = 0.10 exhibits enhanced thermoeletric properties due to the Mn-doping effect.A dimensionless thermoelectric figure of merit of 1.2 is attained for the sample with x = 0.10 at 573 K,showing promising thermoelectric properties in the medium temperature range.     

Electrodeposition of BixSb2−xTey thermoelectric thin films from nitric acid and hydrochloric acid systems

The electrochemical behaviors of Bi^III, Te^IV and Sb^III single ions and their mixtures were investigated in nitric acid and hydrochloric acid system separately. Based on which, Bi_xSb_2−xTe_y thermoelectric films were prepared by potentiostatic electrodeposition from the solutions with different concentrations of Bi^III, Te^IV and Sb^III in the two acid systems. The morphologies, compositions, structures, Seebeck coefficients and resistivities of the deposited thin films were characterized and compared by ESEM (or FESEM), EDS, XRD, Seebeck coefficient measurement system and four-probe resistivity measuring device respectively. The results show that although Bi_xSb_2−xTe_y thermoelectric thin film which structure is consistent with the standard pattern of Bi_0.5Sb_1.5Te₃ can be gained in both of the two acid solutions by adjusting the deposition potential, their morphologies and thermoelectric properties have big differences in different acid solutions.     

The structural and multiferroic properties of (Bi1−xLax)(Fe0.95Co0.05)O3 ceramics

La and Co co-doped BiFeO₃ ((Bi_1−xLa_x)(Fe_0.95Co_0.05)O₃ (x=0, 0.10, 0.20, 0.30)) ceramics were prepared by tartaric acid modified sol–gel method. The X-ray diffraction patterns indicate a transition from rhombohedral structure to tetragonal structure at x=0.20, which has been confirmed by the Raman measurements. The band gap increases with increasing x to 0.20, and then decreases with further increasing x to 0.30. The structural transition has significant effects on the multiferroic properties. The remnant magnetization and saturate ferromagnetic magnetization decrease abruptly with increasing x to 0.10, and then gradually increase with further increasing x up to 0.30. The coercivity is significantly reduced with increasing La doping concentration. The ferroelectricity has been improved by La doping, and the polarization increases with increasing x to 0.10, then decreases with further increasing x up to 0.30. The simultaneous coexistence of soft ferromagnetism and ferroelectricity at room temperature in tetragonal Bi_0.70La_0.30Fe_0.95Co_0.05O₃ indicates the potential multiferroic applications.     

Phase stability and electronic structure of Si2Sb2Te5 phase-change material

On the basis of an ab initio computational study, the present work provide a full understanding on the atomic arrangements, phase stability as well as electronic structure of Si₂Sb₂Te₅, a newly synthesized phase-change material. The results show that Si₂Sb₂Te₅ tends to decompose into Si₁Sb₂Te₄ or Si₁Sb₄Te₇ or Sb₂Te₃, therefore, a nano-composite containing Si₁Sb₂Te₄, Si₁Sb₄Te₇ and Sb₂Te₃ may be self-generated from Si₂Sb₂Te₅. Hence Si₂Sb₂Te₅ based nano-composite is the real structure when Si₂Sb₂Te₅ is used in electronic memory applications. The present results agree well with the recent experimental work.     

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).     

First-principles calculations of structural and thermodynamic properties of Y 3Al5O12

The pseudo-potential plane-wave method using the generalized gradient approximation (GGA) within the framework of the density functional theory is applied to study the structural and thermodynamic properties of Y ₃Al₅O₁₂. The lattice constants and bulk modulus are calculated. They keep in good agreement with other theoretical data and experimental results. The quasi-harmonic Debye model, in which the phononic effects are considered, is applied to the study of the thermodynamic properties. The temperature effect on the structural parameters, bulk modulus, thermal expansion coefficient, specific heats and Debye temperatures in the whole range from 0 to 20 GPa and temperature range from 0 to 1500 K.     

Microwave dielectric properties of (1 − x)(Mg0.95Co0.05)TiO3–x(Na0.5La0.5)TiO3 ceramic system

The microstructures and the microwave dielectric properties of the (1 − x)(Mg_0.95Co_0.05)TiO₃–x(Na_0.5La_0.5)TiO₃ ceramic system were investigated. Two-phase system was confirmed by the XRD patterns and the EDX analysis. A co-existed second phase (Mg_0.95Co_0.05)Ti₂O₅ was also detected. The microwave dielectric properties are strongly related to the density and the matrix of the specimen. A new microwave dielectric material 0.88(Mg_0.95Co_0.05)TiO₃–0.12(Na_0.5La_0.5)TiO₃, possessing an excellent combination of dielectric properties: ε_r  22.36, Q × f  110,000 GHz (at 9 GHz), τ_f  2.9 ppm/°C), is proposed as a candidate dielectric for GPS patch antennas.     

Dielectric and piezoelectric properties of barium-modified Aurivillius-type Na0.5Bi4.5Ti4O15

In this study, monophasic Ba_x(Na_0.5Bi_0.5)_1−xBi₄Ti₄O₁₅ (x=0.03, 0.06, 0.09 and 0.12) ceramics fabricated from the powders synthesized via the solid-state reaction route exhibited relaxor behavior. X-ray diffraction analysis revealed that the barium-modified Na_0.5Bi_4.5Ti₄O₁₅ ceramics have a pure four-layer Aurivillius phase structure. Dielectric properties and phase transitions were studied and are explained in terms of lattice response of these ceramics. A shift in ferroelectric–paraelectric phase transition (T_c) to lower temperatures and a corresponding increase in permittivity peak with increasing concentration of Ba²⁺ are also observed. The decrease of orthorhombicity in the lattice structure by the larger Ba²⁺ ion incorporation, indicating an approach of a and b parameters, results in lower Curie temperature. The piezoelectric activity of Na_0.5Bi_4.5Ti₄O₁₅ (NBT) ceramics was significantly improved by the modification of barium. The Curie temperature T_c and piezoelectric coefficient d₃₃ for the composition with x=0.12 were found to be 635 °C and 21 pC/N, respectively. The relationship of polarization with lattice response is discussed.     

Effects of carbon doping on chemical states of amorphous Ge2Sb2Te5, measured with synchrotron radiation

We fabricated and analyzed the chemical states of carbon-doped (5.2–13.2 at.%) Ge₂Sb₂Te₅ thin films on Si substrates using high-resolution, X-ray photoelectron spectroscopy with synchrotron radiation. Thin films were completely amorphous and their phase-change temperature was 150 °C higher than for un-doped GST. As the carbon doping concentration increased, new chemical states of Ge 3d with 29.9 eV and C 1s with 283.7 eV core-levels were observed. The doped carbon was bonded only with Ge in GST and doping was saturated at 8.7 at.%.     

Structural and optical properties of In35Sb45Se20−xTex phase-change thin films

Physical properties of In₃₅Sb₄₅Se_20−xTe_x thin films with different compositions (x=2.5, 5, 7.5, 10, 12.5 and 15 at %) prepared by electron beam evaporation method are studied. X-ray diffraction results indicate that the as-evaporated films depend on the Te content and the crystallized compounds consist mainly of Sb₂Se₃ with small amount of Sb₂SeTe₂. Transmittance and reflectance of the films are found to be thickness dependent. Optical-absorption data indicate that the absorption mechanism is direct transition. Optical band gap values decrease with increase in Te content as well as with increase in film thickness.     

The unusual magnetic and electronic properties of Gd0.5Ba0.5CoO2.9

Magnetic and electrical properties of well-characterized Gd_0.5Ba_0.5CoO_2.9 have been studied carefully in order to compare them with those of other analogous cobaltates of the type Ln_0.5A_0.5CoO₃ (Ln=La, Nd and A=Sr, Ba) which are ferromagnetic. The results show that Gd_0.5Ba_0.5CoO_2.9, which has A-site cation ordering at room temperature, does not become a genuine ferromagnet at low temperatures, but the ferromagnetic interactions observed at 280 K give over to an antiferromagnetic (AFM) state on cooling to 230 K. The AFM state is rendered ferromagnetic on the application of high magnetic fields. The properties can be understood on the basis of phase separation induced by the large A-site cation-disorder, arising from the size mismatch.     

Magnetic and dielectric properties of Ni0.8Co0.1Cu0.1Fe2O4+PZT composites

Magnetoelectric composites of Ni_0.8Co_0.1Cu_0.1Fe₂O₄ and Lead Zirconate Titanate (PZT) were prepared by using conventional ceramic method. The measured values of saturation magnetization (M_s) and magnetic moments (μ_B) are in accordance with the volume fraction of ferrite content in the composite. The dielectric constant of the composites decreases with frequency. The plots of dielectric constant () against temperature (T) show a peak at their respective transition temperatures. The ME output was measured by varying dc bias magnetic field. A large ME output signal of 776 mV/cm was observed for 35% ferrite +65% ferroelectric composite. The magnetoelectric (ME) response is found to be dependent on the content of ferrite phase.