Different behaviour of local tunneling conductivity for deep and shallow impurities due to Coulomb interaction

Spatial distribution of local tunneling conductivity was investigated for deep and shallow impurities on semiconductor surfaces. Non-equilibrium Coulomb interaction and interference effects were taken into account and analyzed theoretically with the help of Keldysh formalism. Two models were investigated: mean field self-consistent approach for shallow impurity state and Hubbard-I model for deep impurity state. We have found that not only above the impurity but also at the distances comparable to the lattice period both effects interference between direct and resonant tunneling channels and on-site Coulomb repulsion of localized electrons strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS).     

Spectral line broadening in quantum wells due to Coulomb interaction of current carriers

A theoretical analysis of emission line broadening due to Coulomb interaction of carriers is performed. An analytical approximation for the spectral line shape function with exponential decays is derived by using the perturbation theory for many-body electron–hole systems for both non-degenerate and degenerate conditions. An explanation of the experimentally observed spectral line asymmetry and the linewidth change as a function of the temperature and the excitation level is given.     

Effect of finite Coulomb interaction on full counting statistics of electronic transport through single-molecule magnet

We study the full counting statistics (FCS) in a single-molecule magnet (SMM) with finite Coulomb interaction U. For finite U the FCS, differing from U→∞, shows a symmetric gate-voltage-dependence when the coupling strengths with two electrodes are interchanged, which can be observed experimentally just by reversing the bias-voltage. Moreover, we find that the effect of finite U on shot noise depends on the internal level structure of the SMM and the coupling asymmetry of the SMM with two electrodes as well. When the coupling of the SMM with the incident-electrode is stronger than that with the outgoing-electrode, the super-Poissonian shot noise in the sequential tunneling regime appears under relatively small gate-voltage and relatively large finite U, and dose not for U→∞; while it occurs at relatively large gate-voltage for the opposite coupling case. The formation mechanism of super-Poissonian shot noise can be qualitatively attributed to the competition between fast and slow transport channels.     

串型耦合双量子点之间库仑作用对其近藤共振的影响

从理论上研究了串型耦合双量子点之间库仑作用对其近藤共振的影响. 采用非平衡态格林函数和奴役玻色子平均场近似方法求解了系统的哈密顿量; 计算了系统电子的态密度、透射率、占居数和近藤温度随双量子点之间库仑作用能的变化, 同时也计算了电极处于极化时双量子点之间库仑作用能对系统电子态密度的影响. 结果表明,双量子点之间库仑作用能够极大地影响系统的基态物理性质. 同时还对相关的物理问题进行了讨论.     

Effect of Coulomb interaction of electrons on the intersubband emission lineshape in quantum wells

We have used perturbation theory for a many-particle system to analyze intersubband emission in quantum wells, taking into account Coulomb interaction of electrons. We obtained approximate analytical expressions for the shape factor for homogeneous broadening for intersubband transitions. We analyzed the effect of the excitation level and the temperature on the spectral lineshapes. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 642–647, September–October, 2007.     

The effect of the interdot Coulomb interaction on Kondo resonances in series-coupled double quantum dots

We theoretically investigate the effect of the interdot Coulomb repulsion on Kondo resonances in the series-coupled double quantum dot coupled to two ferromagnetic leads. The Hamiltonian of our system is solved by means of the slave-boson mean-field approximation, and the variation of the density of states, the transmission probability, the occupation number, and the Kondo temperature with the interdot Coulomb repulsion are discussed in the Kondo regime. The density of states is calculated for various interdot Coulomb repulsions with both parallel and antiparallel lead-polarization alignments. Our results reveal that the interdot Coulomb repulsion greatly influences the physical property of this system, and relevant underlying physics of this system is discussed.     

Effect of inelastic electron-phonon interaction on tunneling magnetoresistance through ferromagnetic-organic molecule-ferromagnetic junction

We have studied the effect of inelastic electron-phonon interaction on the spin-dependent transport properties of a molecule, trans-polyacetylene (trans-PA), as a molecular bridge sandwiched between two ferromagnetic (FM) electrodes. The work is based on a tight-binding Hamiltonian model within the framework of a generalized Green’s function technique and relies on the Landauer-Büttiker formalism as the basis for studying the current-voltage characteristic of this system. We use the wide-band approximation for FM electrodes. It is shown that due to inelastic interactions, the spin currents increase in a finite value of voltage and tunnel magnetoresistance (TMR) decreases compared with TMR obtained in the absence of phonons.     

Effect of multipolar interaction on the effective thermal conductivity of nanofluids

Nanofluids or liquids with suspended nanoparticles are likely to be the future heat transfer media, as they exhibit higher thermal conductivity than those of liquids. It has been proposed that nanoparticles are apt to congregate and form clusters, and hence the interaction between nanoparticles becomes important. In this paper, by taking into account the interaction between nearest-neighbour inclusions, we adopt the multiple image method to investigate the effective thermal conductivity of nanofluids. Numerical results show that then the thermal conductivity ratio between the nanoparticles and fluids is large, and the two nanoparticles are close up and even touch, and the point-dipole theory such as Maxwell--Garnett theory becomes rough as many-body interactions are neglected. Our theoretical results on the effective thermal conductivity of CuO/water and Al$_{2}$O$_{3}$/water nanofluids are in good agreement with experimental data.     

Influence of the Coulomb interaction in the final state on the cross section of single-electron capture by fast ions

It is shown that the Coulomb interaction of ions in the final state must be taken into account in the estimation of the cross section of electron capture by fast ions. The cross section of electron capture decreases considerably, and the dependence of the cross section on the collision energy becomes close to the experimental one if the interaction of charged particles after collision is taken into account.     

Influence of interlayer coupling and intra-layer Coulomb interaction on electronic transport in bilayer graphene

Calculations of renormalized perpendicular conductivity within Kubo formula employing single particle temperature dependent Green's function formalism for bilayer graphene has been attempted. On the basis of numerical analysis, perpendicular conductivity as a function of temperature, interlayer coupling, onsite Coulomb interaction and carrier concentration per site has been analyzed for both AA- and AB-stacked bilayer graphene. It is found that perpendicular conductivity increases with interlayer coupling and also with temperature at low temperatures while at higher temperatures, there is saturation in perpendicular conductivity. Influences of onsite Coulomb interaction and carrier concentration per site on perpendicular conductivity is just opposite to each other while onsite Coulomb energy suppresses the rate of increase of σ_⊥/σ_⊥0 with temperature, on the other hand increase in carrier density per site enhance this rate significantly. Finally, theoretically obtained results on temperature dependent perpendicular conductivity are viewed in terms of electronic transport data as well as recent theoretical works available in bilayer graphene.     

The effect of Holstein phonons on the electrical conductivity of doped monolayer graphene

Electrical conductivity of graphene sheets is studied in the presence of coupling between lattice optical vibrations and electrons. Green's function approach is implemented to find the temperature behavior of electrical conductivity. Moreover, the effect of electronic doping on the electrical conductivity of graphene with electron–phonon interaction is investigated. Our results show that electrical conductivity increases as a function of temperature at low temperature and gets a maximum value and then decays at high temperature.     

Dependence of thermal conductivity on electrical resistivity in Bismuth-Tellurides

The p-type (Bi_0.25Sb_0.75)₂Te₃ doped with 3-12 wt% excess Te alone and n-type Bi₂(Te_0.94Se_0.06)₃ codoped with 0.017-0.026 wt% Te and 0.068-0.102 wt% I were prepared by the Bridgman method, to produce intentionally polycrystalline. Some of the as-grown specimens were annealed, in order to prepare specimens with much different ρ. These polycrystalline specimens have almost the same degree of alignment of the c plane parallel to the freezing direction. The electrical rersistivity ρ and thermal conductivity κ were measured at 298 K along the freezing direction and κ was plotted as a function of ρ. As a result, the lattice components κ_ph obtained by subtracting the electronic component κ_el from the observed κ were found to decrease almost linearly with a decrease of ρ in both p- and n-type specimens, where κ_el was calculated using Wiedemann-Franz law. This tendency is consistent with the conventional result that κ_ph becomes negligible small in metals. The significant decrease in κ_ph with decrease in ρ is considered to be caused predominantly by the phonon scattering due to dopants. The relationship between κ_ph and ρ was first clarified in the intermediate region between the metal and insulator.     

A model of enhanced STM current due to semiconductor optical absorption

We present a simple model for the change in tunneling current between a semiconductor surface and a metal tip under spectroscopic illumination in a scanning tunneling microscope. This model predicts a sharp increase in the tunneling current due to the increase in the conduction band carrier density when the photon energy exceeds the optical band gap. The tunneling current for a large diffusion length has a more pronounced onset than for a small length. Our model should provide, when combined with experiments, a method of determining localized effective stoichiometry, and therefore provides a localized alternative to the use of optical absorption measurements. Our theoretical tunneling current versus photon energy curves are in good qualitative agreement with the existing experimentally measured curves for Si, GaAs, and InP obtained by Qian and Wessels. In addition, we have examined the effects of temperature, surface recombination velocity, and degeneracy on our theoretical results for the Hg_1−xCd_xTe, Hg_1−xZn_xTe, and Hg_1−xZn_xSe ternary narrow gap semiconductor systems.     

氮化硅纳米薄膜非平衡热导率实验研究

3ω实验方法是一种可以对薄膜热导率进行瞬时测量的方法。根据3ω方法测试原理,搭建了薄膜导热系数测试平台,并且分别测试低频率段和高频段薄膜与基底的温升以及薄膜热导率。测试结果表明:Si3N4薄膜的热导率随温度的升高而增大;高频段下,热导率受频率影响大,误差大;在低频段下薄膜热导率与频率变化基本无关;基于电子与声子的局部热平衡运输方程假设,S i3N4薄膜的热导率具有极度非平衡性;通过比较电阻、热导率与温度的关系可以看出加热器的尺寸大小会影响薄膜的热导率,最佳加热器的宽度选用20μm左右。     

Screening effect of Ti ions on the electrical conductivity and thermoelectric power of Mg ferrite

The samples Mg_1+xTi_xFe_2−2xO₄ were prepared in a single phase spinel structure as indicated from X-ray analysis. The preference of Mg²⁺ ions to the octahedral site decreases the ratio of the normal spinel in the investigated ferrite where the Mg²⁺ increases on the expense of the Fe³⁺ ions on the same site. The increase in the conductivity was found to be due to thermally activated mobility of charge carriers. The mobility data enhances the use of Verway model of conductivity which depends on the electron exchange between iron ions of different valences located on the same crystallographic sites. The existence of Ti⁴⁺ ions on the octahedral site screens the polarization and decreases the conductivity of the samples. Peculiar behavior was obtained for Ti content of 0.7 and 0.8 due to the presence of secondary phases.     

Effect of plasma treatment on electrical conductivity and Raman spectra of carbon nanotubes

Multi-walled carbon nanotubes (MWCNTs) were treated with a radio-frequency discharge. We found that MWCNTs showed opposite trends in electrical conductivity when treated with oxygen and hydrogen plasmas. MWCNTs showed enhanced electrical conductivity when placed at cathode with oxygen plasma treatment, whereas MWCNTs treated at positive column did not show such a trend. In contrast, the conductivity of MWCNTs dropped sharply with hydrogen plasma treatment. The measured conductivity trends of MWCNTs are correlated with observed Raman spectral shift. The possible mechanisms of the change in electrical conductivity in plasma-treated MWCNTs are discussed.     

Effects of protons and acceptor substitution on the electrical conductivity of La6WO12

Transport properties and non-stoichiometry of La_1−xCa_xW_1/6O₂ and La_1−yW_1/6O₂ (x=0, 0.005, 0.05; y=0.05, 0.1) have been characterized by means of impedance spectroscopy, the EMF-technique, H⁺/D⁺ isotope exchange, and thermogravimetry in the temperature range 300-1200 °C as a function of oxygen partial pressure and water vapor partial pressure. The materials exhibit mixed ionic and electronic conductivities; n- and p-type electronic conduction predominate at high temperatures under reducing and oxidizing conditions, respectively. Protons are the major ionic charge carrier under wet conditions and predominates the conductivity below ∼750 °C. The maximum in proton conductivity is observed for LaW_1/6O₂ with values reaching 3×10⁻³ S/cm at approximately 800 °C. The high proton conductivity for the undoped material is explained by assuming interaction between water vapor and intrinsic (anti-Frenkel) oxygen vacancies.     

基体电导率对0-3型铁电复合材料高压极化行为及损耗的影响

提出了一个0-3型聚合物基铁电复合材料的直流高压极化模型.模型中考虑了聚合物/铁电陶瓷界面处自由电荷的积聚及极化初始时刻的真实情况,利用拉普拉斯静电场方程,并结合边界条件,得到了直流高压极化过程中复合材料的极化强度、界面电流密度等随时间的演化方程,同时得到介电常数、介质损耗等物理特性的表达式.此外,实验制备了分别以环氧树脂E-44和铁电共聚物P(VDF-TrFE)为基体的两种0-3型铁电复合材料.从理论和实验两方面研究了基体电导率对极化行为以及介质损耗的影响.两方面结果均表明：随基体电导率增加,极化时间缩短,陶瓷相的极化强度及复合材料的整体电性能提高,但是漏电流及介质损耗增加.而且实验结果与直流高压极化模型的预测结果符合. 关键词： 铁电复合材料 电导率 极化 介质损耗     

中能重离子碰撞中库仑相互作用对动量耗散的同位旋效应

利用同位旋相关的量子分子动力学模型，研究了中能重离子碰撞过程中的库仑相互作用对于 动量耗散的同位旋效应.计算结果表明: 由于库仑相互作用的存在，使得碰撞过程中的化学 不稳定区和力学不稳定区减小，明显地减弱了动量耗散；其减弱的程度与对称势的形式及强 度有关，对称势越强则动量耗散的减弱幅度越大.动量耗散灵敏地依赖于核子-核子碰撞截 面的同位旋相关性而较弱地依赖于对称势，这一特征不论有无库仑相互作用均存在. 关键词： 中能重离子碰撞 库仑相互作用 动量耗散 同位旋效应     

原子间仍极相互作用对辐射场非经典性的影响

研究了原子间的偶极－偶极相互作用力对相干态Ｔａｖｉｓ－Ｃｕｍｍｉｎｇｓ（Ｔ－Ｃ）模型中辐射场的压缩．振幅平方压缩和光子的反聚束效应的影响．