Theoretical investigation of exchange bias

The exchange bias of bilayer magnetic films consisting of ferromagnetic (FM) and antiferromagnetic (AFM) layers in an uncompensated case is studied by use of the many-body Green's function method of quantum statistical theory. The effects of the layer thickness and temperature and the interfacial coupling strength on the exchange bias H_E are investigated. The dependence of the exchange bias H_E on the FM layer thickness and temperature is qualitatively in agreement with experimental results. When temperature varies, both the coercivity H_C and H_E decrease with the temperature increasing. For each FM thickness, there exists a least AFM thickness in which the exchange bias occurs, which is called pinning thickness.     

Effects of component ratio and easy axes distribution on the exchange bias in ferromagnetic-antiferromagnetic random alloys

For a ferromagnetic (FM)-antiferromagnetic (AFM) system with composition x(FM)+(AFM)_1−x, a modified Monte Carlo Metropolis method is performed to study the effects of x and easy axes distribution at the FM/AFM nearest neighbors on exchange bias field H_E, coercivity H_C, and vertical magnetization shift M_E after cooling under different magnetic fields h_CF. When the orientations of easy axes are uniform, the x dependence of H_E and M_E undergo a non-monotonous to monotonous process with the increase of h_CF, whereas H_C shows a more complex behavior. On the other hand, for the case of the random orientation, H_C has a peak around x=0.5, while M_E decreases with the increase of x. H_E exhibits negative extrema at small x and disappears for larger x. However, abnormal positive H_E observed depends on the frustration and the distinct trends of two coercive fields with x in such a special model.     

The exchange bias and coercivity of FM/AFM films: Monte Carlo simulation

The exchange bias (H_E) and coercivity (H_C) of the ferromagnet/antiferromagnet (FM/AFM) films have been simulated with Monte Carlo method. The simulated results indicate that, the value of H_E decreases with increasing temperature, and the values of H_E and the blocking temperature T_b at which H_E=0 reduce evidently with decreasing absolute value of interlayer exchange coupling JI. It also is found that for the large absolute values of JI, the maximum in H_C occurs very close to T_b. At the same time, it is observed that the diluted ratio of FM at FM/AFM interface influences clearly the value of H_E. The simulated results are consistent with the experimental facts. The maximum behaviour in the H_C−T curves has been explained by the interplay of the softening of some fraction of the spins in the AFM layer near T_N′ and the disorder of the spins in FM layer near Curie temperature T_C.     

Temperature dependent exchange bias effect in polycrystalline BiFeO3/FM (FM = NiFe, Co) bilayers

Extensive studies on the temperature (T) dependent exchange bias effect were carried out in polycrystalline BiFeO₃(BFO)/NiFe and BFO/Co bilayers. In contrast to single-crystalline BFO/ferromagnet (FM) bilayers, sharp increase of the exchange bias field (H _E ) below 50 K were clearly observed in both of these two bilayers. However, when T is higher than 50 K, H _E increases with T and decreases further when T is larger than 230 K (for BFO/NiFe) or 200 K (for BFO/Co), which is similar to those reported in single-crystalline BFO/FM bilayers. After the exploration of magnetic field cooling, the temperature dependent exchange bias can be explained considering two contributions from both the interfacial spin-glass-like frustrated spins and the polycrystalline grains in the BFO layer. Moreover, obvious exchange bias training effect can be observed at both 5 K and room temperature and the corresponding results can be well fitted based on a recently proposed theoretical model taking into account the energy dissipation of the AFM layer.     

铁磁/反铁磁双层膜系统中交换各向异性及其厚度依赖性

研究铁磁/反铁磁双层膜系统中交换偏置场和矫顽场的冷却磁场依赖性.结果表明,随着冷却磁场的增加,交换偏置场由负值向正值转变.在转变点附近,矫顽场有-个特别的增强,并达到最大值.结果同相关实验-致.研究铁磁层和反铁磁层厚度对交换偏置场和矫顽场的影响.发现,正负交换偏置场和矫顽场随着铁磁层厚度的增大而减小,但随反铁磁层厚度的变化关系复杂.在正交换偏置场的情形,随反铁磁层厚度的增大,交换偏置场增强,矫顽场减弱;在负交换偏置场的情形,随反铁磁层厚度的增大,交换偏置场减弱,矫顽场增强.     

Spin-flop coupling and exchange anisotropy in ferromagnetic/antiferromagnetic bilayers

By investigating the antiferromagnetic spin configuration, the exchange anisotropy and the interfacial spin-flop coupling in ferromagnetic/antiferromagnetic (FM/AF) bilayers have been discussed in detail. The results show that there are four possible cases for the AF spins, namely the reversible recovering case, irreversible half-rotating case, irreversible reversing and irreversible half-reversing cases. Moreover, the realization of the cases strongly depends on interface quadratic coupling, interface spin-flop (biquadratic) coupling and AF thickness. The magnetic phase diagram in terms of the AF thickness t_AF, the interfacial bilinear coupling J₁ and the spin-flop coupling J₂ has been constructed. The corresponding critical parameters in which the exchange bias will occur or approach saturation have been also presented. Specially, the small spin-flop exchange coupling may result in an exchange bias without the interfacial bilinear exchange coupling. However, in general, the spin-flop exchange coupling can weaken or eliminate the exchange bias, but always enhances the coercivity greatly.     

Exchange coupling in CoO–Co bilayer

In this work, exchange bias and coercivity enhancement in ferromagnet (FM)–antiferromagnet (AFM) bilayer have been investigated. CoO film (50 nm) was deposited by sputtering with a relatively high oxygen partial pressure. The deposited films were subsequently annealed at varied temperature up to 973 K in the air atmosphere. The CoO film shows a disordered structure in the as-deposited state and an increase of crystallinity after annealing characterized by XRD and Raman spectra. A 40-nm Co film was deposited on the as-deposited CoO and annealed films. The Co–CoO bilayer shows a large exchange bias up to 1600 Oe and relatively high coercivity up to 3200 Oe (H_C−) at 5 K, which is much larger than that of crystalline Co–CoO bilayer films without any treatment. The spin glass behavior combined with increasing crystallinity, surface roughness of CoO after annealing may be attributed to the large exchange bias and high coercivity.     

Tuning exchange bias through zero field cooling from different remanent states above blocking temperature in Ni50Mn36Sb14 alloy

Changing remanent states above blocking temperature (T_B) in Ni₅₀Mn₃₆Sb₁₄ alloy has been proven to be an effective way of tuning the value and sign of exchange bias (EB) field. The hysteresis loops at 5 K exhibit double shifted shape, indicating that there are two opposite EB signs resulting from an imprint of domain pattern of ferromagnetic (FM) regions into anti‐ferromagetic (AFM) ones during cooling. All the results demonstrate that the interfacial spin configuration plays a crucial role on the origin of EB, while the high cooling field not only induces a single FM domain state above T_B but also tunes the fractions of FM and AFM interactions through martensitic transition. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ferromagnetic/antiferromagnetic exchange coupling in SrFe<Subscript>12</Subscript>O<Subscript>19</Subscript>/CoO composites

The surface of SrFe₁₂O₁₉ coated with a CoO layer reveals a strong exchange bias characterized by magnetic hysteresis loops. The low-temperature coercivity, H_C, and the squareness, M_R/M_S, of a permanent magnet of SrFe₁₂O₁₉/CoO powder prepared by the sol–gel method are enhanced after field cooling through the Néel temperature (T_N=290 K) when compared to those after zero-field cooling. The existence of loop shifts and the enhancement of H_C indicate that exchange-bias effects, which are induced by the ferromagnetic/antiferromagnetic (FM/AFM) exchange-coupling interactions, are responsible for these behaviors. According to our experimental results, some of the factors controlling the exchange bias, such as FM/AFM interfaces and the CoO amount of the antiferromagnetic layer, are discussed. PACS 75.30.Et; 75.50.Ee; 75.60.Ej; 75.60.Gm; 75.70.Cn     

Pt插层对铁磁/反铁磁界面交换耦合的影响

在铁磁层(FM)/反铁磁层(FeMn)耦合体系中插入Pt 插层或对靠近FM/FeMn界面处的FeMn掺杂Pt元素,研究了体系的交换偏置场 H_ex及矫顽力H_c随Pt插层深度 d_Pt与Pt掺杂层厚度t_PtFeMn的变化关系. 实验结果表明,引入Pt插层后NiFe/FeMn(d_Pt)/Pt/FeMn体系的未补偿磁矩(UCS)的数量得到很大的提高,从而对H_ex与H_c 起到增强的作用; 同时, 从实验结果可以推测FeMn层内部UCS的分布深度约为1.3 nm. 另外,对靠近FM/FeMn界面处的FeMn掺杂Pt元素,发现掺入Pt元素后体系的H_ex 得到有效增强, 这是因为掺入Pt元素后体系UCS的数量也得到很大的提高.     

On the field dependence of the interface energy in AF/FM bilayers

In the investigations of antiferromagnetic (AF)/ferromagnetic (FM) bilayer samples, often distinct experimental techniques yield different values for the measured exchange anisotropy field (H_E). We propose that the observed discrepancy may be accounted in part by the dependence of the unidirectional anisotropy with the value of the externally applied cooling field (h). Using a simple microscopic model for representing the AF/FM interface, which incorporates the effect of interface roughness, we show that the interface energy between the AF and FM layer indeed varies with h, as recently observed in anisotropic magnetoresistance measurements, lending support to our proposal.     

Room temperature exchange bias in multiferroic BiFeO<Subscript>3</Subscript> nano- and microcrystals with antiferromagnetic core and two-dimensional diluted antiferromagnetic shell

Exchange bias (EB) of multiferroics presents many potential opportunities for magnetic devices. However, instead of using low-temperature field cooling in the hysteresis loop measurement, which usually shows an effective approach to obtain obvious EB phenomenon, there are few room temperature EB. In this article, extensive studies on room temperature EB without field cooling were observed in BiFeO₃ nano- and microcrystals. Moreover, with increasing size the hysteresis loops shift from horizontal negative exchange bias (NEB) to positive exchange bias (PEB). In order to explain the tunable EB behaviors with size dependence, a phenomenological qualitative model based on the framework of antiferromagnetic (AFM) core-two-dimensional diluted antiferromagnet in a field (2D-DAFF) shell structure was proposed. The training effect (TE) ascertained the validity of model and the presence of unstable magnetic structure using Binek’s model. Experimental results show that the tunable EB effect can be explained by the competition of ferromagnetic (FM) exchange coupling and AFM exchange coupling interaction between AFM core and 2D-DAFF shell. Additionally, the local distortion of lattice fringes was observed in hexagonal-shaped BiFeO₃ nanocrystals with well-dispersed behavior. The electrical conduction properties agreed well with the space charge-limited conduction mechanism.     

Influence of ferromagnetic layer on the exchange coupling of antiferromagnetic NiO-based films

Strong effects of ferromagnetic layer (FMCo, and Ni₈₀Fe₂₀) on the magnitude and blocking temperature of exchange coupling are observed in antiferromagnetic NiO-based films NiO (5 nm)/FM₁ (t nm)/FM₂ (6-t nm). The existence of interfacial spins configuration in glass-like state and FM anisotropy are proposed to interpret a minimum shown in thermal magnetization curves for films with strong exchange coupling effect. The microstructural change of FM layer and the long-range interaction of exchange bias are taken into account to explain a strong dependence of exchange coupling energy density on the thickness t_F of FM layer when t_F<5 nm.     

The exchange bias in MnPd/Co1−xFex bilayers

A systematic study of exchange bias in MnPd/Co and MnPd/Co_1−xFe_x bilayers has been carried out. Very large unidirectional anisotropy constant of 2.2 erg/cm² and the appearance of double-shifted loops, ascribed to the coexistence of positive and negative exchange bias, have been observed. The dependence of exchange bias, unidirectional anisotropy constant and coercivity on thickness, temperature, annealing regime and Fe content has been investigated and discussed.     

铁磁/反铁磁双层膜中冷却场对交换偏置场的影响

用铁磁畴壁模型研究了非补偿界面铁磁/反铁磁双层膜中冷却场（包括大小及其方向）对交换偏置场h_E的影响.结果表明：当冷却场的方向与反铁磁层磁易轴一致时,h_E大小与冷却场大小无关.当冷却场的方向偏离磁易轴时,h_E的大小随偏离角度的增大有缓慢的改变,但当冷却场的方向偏离到临界角度γ_c处,h_E的大小发生突变,其γ_c的大小随冷却场的增大而增大.特别是当冷却场的偏离角度大于γ_c后,h_E出现由负转正的现象,其转变点还与冷却场的大小有关.另外,h_E与铁磁层原子层数N_F的关系会发生由h_E∝N^-1_F向h_E∝N^-λ_F的转变,其中λ>1.其发生转变的条件与N_F、冷却场大小和方向密切相关. 关键词： 铁磁/反铁磁双层膜 交换偏置 冷却场     

A new paradigm for exchange bias in polycrystalline thin films

In this paper we provide a review and overview of a series of works generated in our laboratory over the last 5 years. These works have described the development and evolution of a new paradigm for exchange bias in polycrystalline thin films with grain sizes in the range 5-15 nm. We have shown that the individual grains in the antiferromagnetic (AF) layer of exchange bias systems contain a single AF domain and reverse over an energy barrier which is grain volume dependent. We show that the AF grains are not coupled to each other and behave independently. Understanding this process and using designed measurement protocols has enabled us to determine unambiguously the blocking temperature distribution of the AF grains, the anisotropy constant (K_AF) of the AF, understand the AF grain-setting process, and predict its magnetic viscosity. We can explain and predict the grain size and film thickness dependence of the exchange field H_ex. We have also studied interfacial effects and shown that there are processes at the interface, which can occur independently of the bulk of the AF grains. We have seen these effects via studies of trilayers and also via the field dependence of the setting process which does not affect the blocking. From separate experiments we have shown that the disordered interfacial spins exist as spin clusters analogous to a spin glass. These clusters can order spontaneously at low temperatures or can be ordered by the setting field. We believe it is the degree of order of the interfacial spins that gives rise to the coercivity in exchange bias systems. Based on this new understanding of the behaviour of the bulk of the grains in the antiferromagnet and the interfacial spins we believe that we have now a new paradigm for the phenomenon of exchange bias in sputtered polycrystalline thin films. We emphasize that the phenomenological model does not apply to core-shell particles, epitaxial single-crystal films and large grain polycrystalline films.     

Temperature dependence of the exchange coupling in CO/SI(or Ge)/Fe trilayers

The temperature dependences of interfacial exchange coupling in Co/semiconductor (SM)/Fe trilayers (SM≡Si or Ge) with different spacer thicknesses are investigated. Only one step is found in the third (not in the first) quadrant of the hysteresis loop of the trilayers with different SM thicknesses, which is ascribed to a larger interfacial coupling strength of Co/CoGe (or Co/CoSi) than of Fe/FeGe (or Fe/FeSi). Furthermore, in comparison with Co/Ge/Fe, a smaller exchange bias field H_E and no clear step are observed in Co/Si/Fe, which may originate from the weaker interfacial coupling in this trilayer. The variation of coercivity H_C with spacer thickness at low temperatures in Co/Ge/Fe is different from that in Co/Si/Fe, indicating again the important effect of the SM layer in the trilayers.     

Study of ferromagnetism–superconductivity interactions in Co/Nb multilayers

We investigate Co/Nb multilayers to explore the spontaneous π-phase shift between the superconducting (SC) layers, which is attributed for causing the non-monotonic change of the SC transition temperature (T_c) with the ferromagnetic (FM) layer thickness (t_FM) in several FM/SC multilayered systems. The issue of interfacial roughness is also explored by growing Co/Nb multilayers at various sputtering pressures. Transport measurements show a non-monotonic dependence of T_c on t_FM, and this dependence is insensitive to the structural variation present in the samples, as measured by X-ray scattering.     

The magnetism for NN AFM ground state in Fe-based superconductor: Sr1−xKxFe2As2

The crystal structure, magnetism properties, and density of states for FeAs layered compound SrFe₂As₂ have been investigated by using the density functional theory (DFT) method. The magnetism under a checkerboard nearest neighbor anti-ferromagnetic (NN AFM) and ferromagnetic (FM) order ground-state have been analyzed with substitution for Sr with K ion in Sr_1−xK_xFe₂As₂. The results indicate that the distortion of FeAs tetrahedrons is sensitive to the electron doping concentration. The system magnetism was suppressed by K doping in NN-AFM ground state instead of FM. The density of states at Fermi level N(E_F) under NN AFM ground state would be regarded as a driving force for the increased T_c of Sr_1−xK_xFe₂As₂ system as observed experimentally. Our calculation reflects that NN AFM type spin fluctuation may still exist in the Sr_1−xK_xFe₂As₂ system and it may be an origin of strong spin fluctuation in this system besides the spin density wave (SDW) states.     

Peculiarities of the magnetic,galvanomagnetic, elastic,and magnetoelastic properties of Sm<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript>x</Subscript>MnO<Subscript>3</Subscript> manganites

Manganites of the Sm1?xSr_xMnO₃ system (x=0.33, 0.4, and 0.45) possess giant negative values of the magnetoresistance Δρ/ρ and the volume magnetostriction ω near the Curie temperature T_C. In the compound with x=0.33, the isotherms of Δρ/ρ, ω, and magnetization σ exhibit smooth variation and do not reach saturation up to maximum magnetic field strengths (120 kOe) studied (according to the neutron diffraction data, this substance comprises a ferromagnetic (FM) matrix with distributed clusters of a layered antiferromagnetic (AFM) structure of the A type). In the compounds with x=0.4 and 0.45 containing, besides the FM matrix and A-type AFM phase, a charge-ordered AFM phase of the CE type (thermally stable to higher temperatures as compared to the A-type AFM and the FM phases), the same isotherms measured at T ≥ T_C show a jumplike increase in the interval of field strengths between H_c1 and H_c2 and then reach saturation. In the interval H_c1 > H > H_c2, the σ, ω, and Δρ/ρ values exhibit a metastable behavior. At temperatures above T_C, the anisotropic magnetostriction changes sign, which is indicative of rearrangements in the crystal structure. The giant values of ω and Δρ/ρ observed at T ≥ T_C for all compounds, together with excess (relative to the linear) thermal expansion and a maximum on the ρ(T) curve, are explained by the phenomenon of electron phase separation caused by a strong s-d exchange. The giant values of magnetoresistance and volume magnetostriction (with ω reaching ～10^?3) are attributed to an increase in the volume of the FM phase induced by the applied magnetic field. In the compound with x=0.33, this increase proceeds smoothly as the FM phase grows through the FM layers in the A-type AFM phase. In the compounds with x=0.4 and 0.45, the FM phase volume increases at the expense of the charge-ordered CE-type AFM structure (in which spins of the neighboring manganese ions possess an AFM order). The jumps observed on the σ(H) curves, whereby the magnetization σ reaches ～70% of the value at T=1.5 K, are indicative of a threshold character of the charge-ordered phase transition to the FM state. Thus, the giant values of ω and Δρ/ρ are inherent in the FM state, appearing as a result of the magnetic-field-induced transition of the charge-ordered phase to the FM state, rather than being caused by melting of this phase.