Raman analysis of amorphous silicon ruthenium thin films embedded with nanocrystals

We report the Raman analysis of both as‐deposited and annealed amorphous silicon ruthenium thin films embedded with nanocrystals. In the Raman spectra of as‐deposited films, variations of TO peak indicate a short‐range disorder of a‐Si network with an increase of Ru concentration. The substitutional Ru atoms lower the concentration of Si―Si bonds and suppress the intensity of TO peak, but have less effect on TA, LA and LO peaks. In the Raman spectra of annealed films, characteristic parameters confirm the upgrade of a‐Si network at a low annealing temperature and the emergence of both ruthenium silicide and silicon nanocrystals at 700 °C. Although ruthenium silicide nanocrystals present no Raman peaks in the Raman spectra of as‐deposited samples, the non‐linear variations of intensity ratios I_{LA + LO}/I_TO and I_TA/I_TO still suggest their existence, and these nanocrystals are subsequently verified by high‐resolution transmission electron microscopy. Copyright © 2015 John Wiley & Sons, Ltd.     

InGaN薄膜的紫外共振喇曼散射

利用325nm紫外光激发,对不同组分的In_xGa_1-xN薄膜的喇曼散射谱进行了研究.在光子能量大于带隙的情况下,观察到显著增强的二阶A₁(LO)声子散射峰.二阶LO声子峰都从一阶LO声子的二倍处向高能方向移动,移动量随样品In组分的增加而增大,认为是带内Frhlich相互作用决定的多共振效应引起的.分析了一阶LO声子散射频率和峰型与In组分的关系.在喇曼谱中观察到样品存在相分离现象,并与X射线衍射的实验结果进行 关键词： xGa_1-xN合金')" href="#">In_xGa_1-xN合金 紫外共振喇曼散射 二阶声子 相分离     

两原子与双模腔场喇曼相互作用(g1≠g2)的辐射谱

研究了两个有效双能级原子与双模腔场具有不同耦合常数(g₁≠g₂)时通过喇曼相互作用的辐射谱,详细讨论了双模腔场分别处于不同数态时的情形,发现其辐射谱具有如下新特点:当模1腔场处于真空态,模2腔场处于弱场中时,随着R=g₂/g₁的增加,辐射谱交替出现对称的10峰、6峰结构,与单模双原子情形相比较,更为灵敏地反映出两原子与腔场间不同的喇曼相互作用强度;当模1腔场处于真空态、模2腔场处于强场中时,0相似文献   

Raman spectroscopic and photoluminescence study of single-crystalline SnO2 nanowires

Single-crystalline SnO₂ nanowires with sizes of 4-14 nm in diameter and 100-500 nm in length were produced in a molten salt approach by using hydrothermal synthesized precursor. Structural characters of the nanowires were examined by X-ray diffraction and high-resolution electron transmission microscopy. Raman, photoluminescence and X-ray photoelectron spectra of the samples were examined under heat treatments. Three new Raman modes at 691, 514 and 358 cm⁻¹ were recorded and assigned. The former two are attributed to activation of original Raman-forbidden A_2uLO mode and the third is attributed to defects in small-sized nanowires. A strong photoluminescence is observed at about 600 nm, the temperature effects is examined and the origin of the PL process is discussed via X-ray photoelectron spectra.     

Preparation and characterization of CdS/Si coaxial nanowires

CdS/Si coaxial nanowires were fabricated via a simple one-step thermal evaporation of CdS powder in mass scale. Their crystallinities, general morphologies and detailed microstructures were characterized by using X-ray diffraction, scanning electron microscope, transmission electron microscope and Raman spectra. The CdS core crystallizes in a hexagonal wurtzite structure with lattice constants of a=0.4140 nm and c=0.6719 nm, and the Si shell is amorphous. Five Raman peaks from the CdS core were observed. They are 1LO at 305 cm⁻¹, 2LO at 601 cm⁻¹, A₁-TO at 212 cm⁻¹, E₁-TO at 234 cm⁻¹, and E₂ at 252 cm⁻¹. Photoluminescence measurements show that the nanowires have two emission bands around 510 and 590 nm, which originate from the intrinsic transitions of CdS cores and the amorphous Si shells, respectively.     

Photoelectron spectra of F3SiC2H4Si(CH3)3 molecule using monochromatized synchrotron radiation

A variety of photoelectron spectra for gas phase F₃SiC₂H₄Si(CH₃)₃ molecule have been measured using monochromatized undulator radiation and a hemispherical electrostatic analyzer. Valence photoelectron spectrum shows many peaks for ionization from shallow and deep molecular orbitals in the binding energy region of 9–40 eV. A calculation of ionization energies using the outer valence Green's function method indicates energies in agreement with experimental results below 17.5 eV. Spectra for Si L-shell electron emission show chemical shifts of Si atoms induced from different chemical environments around two Si atoms and also exhibit spin–orbit splitting for 2p photoelectrons. Further photoelectron spectra for C K-shell and F K-shell are discussed in comparison with those of related molecules.     

Raman scattering of Zn doped CuGaS2 layers grown by vapor phase epitaxy

Raman spectra for non-site-selectively and site-selectively Zn-doped CuGaS₂ layers grown by vapor phase epitaxy (VPE) were investigated. Although an appearance of characteristic Raman line(s) related with the doped Zn atom was not seen, an enhancement of the Raman intensity ratio of the highest LO mode to the A₁ mode (I_LO/I_A1) was observed. The site-selectively Zn-doped layers with p-type conductivity exhibited larger I_LO/I_A1 ratio compared to those with n-type conductivity. The observed correlation between the I_LO/I_A1 ratio and the peak energy of the photoluminescence characteristic for Zn-doped p-type samples (L emission) suggests that the enhancement of I_LO/I_A1 is due to the increase of Zn atom substituting Ga site (Zn_Ga) which is acting as an acceptor.     

Near infrared to UV dielectric functions of Al doped ZnO films deposited on c-plane sapphire substrate using pulsed laser deposition

Transparent conducting polycrystalline Al-doped ZnO (AZO) films were deposited on sapphire substrates at substrate temperatures ranging from 200 to 300 °C by pulsed laser deposition (PLD). X-ray diffraction measurement shows that the crystalline quality of AZO films was improved with increased substrate temperature. The electrical and optical properties of the AZO films have been systematically studied via various experimental tools. The room-temperature micro-photoluminescence (µ-PL) spectra show a strong ultraviolet (UV) excitonic emission and weak deep-level emission, which indicate low structural defects in the films. A Raman shift of about 11 cm⁻¹ is observed for the first-order longitudinal-optical (LO) phonon peak for AZO films when compared to the LO phonon peak of bulk ZnO. The Raman spectra obtained with UV resonant excitation at room temperature show multi-phonon LO modes up to third order. Optical response due to free electrons of the AZO films was characterized in the photon energy range from 0.6 to 6.5 eV by spectroscopic ellipsometry (SE). The free electron response was expressed by a simple Drude model combined with the Cauchy model are reported.     

X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions

The influence of boron (B)/arsenic (As) on X-ray photoelectron spectroscopy (XPS) study of NiSi formation on shallow junctions is investigated in this paper. The Ni-silicide film was formed after 30 s soak anneal at 450 °C on ultra shallow p+/n or n+/p junctions. The atomic ratio of Ni/Si profile in depth was probed by XPS and the results show that a uniform NiSi layer forms on B-doped p+/n junction while a non-uniform, Ni-rich silicide layer forms on As-doped n+/p junction. It does not agree with the results of other independent phase identification methods such as X-ray diffraction, Rutherford backscattering spectroscopy, and Raman scattering spectroscopy, which all demonstrate the formation of NiSi on both n+/p and p+/n junctions. Comparing the raw binding energy spectra of Ni and Si for each silicide film, the similar spectra for Ni signals are revealed. But the Si signals with an obviously smaller intensity is found to be responsible for the apparent Ni rich silicide formation on As-doped n+/p junction. It indicates that As atoms in the silicide film can affect the sputtering yield of Ni and Si, while no noticeable effect is observed for B atoms. More As atoms than B atoms segregation into the silicide layer is indeed verified by secondary ion mass spectroscopy. And micro-Raman scattering spectroscopy further confirms that the degree of crystallinity for NiSi on n+/p junction is inferior to that on p+/n junction.     

Band structure calculations on the layered compounds FeGa2S4 and NiGa2S4

For the compounds FeGa₂S₄ and NiGa₂S₄ band structure calculations have been performed by the ab initio plane wave pseudo-potential method. The valence charge density distribution points to an ionic type of chemical bonding between the transition metal atoms and the ligand atoms. Two models for the pseudo-potentials are used to calculate the band structures: (a) only s and p electrons and (b) also the d-shells of the transition metal atoms are included in the pseudo-potentials. The differences between these two cases of band structures are discussed. Energy gap formation peculiarities are analysed for both crystals. Zak's elementary energy band concept is demonstrated for the energy spectra of the considered crystals.     

非晶Si/SiO2超晶格的制备及其光谱研究

用磁控溅射方法在玻璃基底上制备了非晶Si/SiO₂超晶格.利用透射电子显微镜 (TEM) 和X射线衍射技术对其结构进行了分析,结果表明,超晶格中Si层大部分区域为非晶相,局域微区呈现有序结构,其厚度由1.8—3.2nm变化,SiO₂层厚度为4.0nm.并采用多种光谱测量技术,如吸收光谱、光致发光光谱和Raman光谱技术,对该结构的光学性质进行了系统研究.结果表明,随纳米Si层厚度的减小,光学吸收边以及光致荧光峰发生明显蓝移,Raman峰发生展宽,即观测到明显的量 关键词：     

Crystal chemistry of layered carbide, Ti3(Si0.43Ge0.57)C2

 The crystal structure of a layered ternary carbide, Ti₃(Si_0.43Ge_0.57)C₂, was studied with single-crystal X-ray diffraction. The compound has a hexagonal symmetry with space group P6₃/mmc and unit-cell parameters a=3.0823(1) Å, c=17.7702(6) Å, and V=146.21(1) Å³. The Si and Ge atoms in the structure occupy the same crystallographic site surrounded by six Ti atoms at an average distance of 2.7219 Å, and the C atoms are octahedrally coordinated by two types of symmetrically distinct Ti atoms, with an average C-Ti distance of 2.1429 Å. The atomic displacement parameters for C and Ti are relatively isotropic, whereas those for A (=0.43Si+0.57Ge) are appreciably anisotropic, with U₁₁ (=U₂₂) being about three times greater than U₃₃. Compared to Ti₃SiC₂, the substitution of Ge for Si results in an increase in both A-Ti and C-Ti bond distances. An electron density analysis based on the refined structure shows that each A atom is bonded to 6Ti atoms as well as to its 6 nearest neighbor A site atoms, whether the site is occupied by Si or Ge, suggesting that these bond paths may be significantly involved with electron transport properties.     

First-principles investigation of the intrinsic defects in Ti3SiC2

First-principles calculations have been carried out to investigate intrinsic defects including vacancies, interstitials, antisite defects, Frenkel and Schottky defects in the 312 MAX phase Ti₃SiC₂. The formation energies of defects are obtained according to the elemental chemical potentials which are determined by the phase stability conditions. The most stable self-interstitials are all found in the hexahedral position surrounded by two Ti(2) and three Si atoms. For the entire elemental chemical potential range considered, our results demonstrated that Si and C related defects, including vacancies, interstitials and Frenkel defects are the most dominant defects. Besides, the present calculations also reveal that the formation energies of C and Si Frenkel defects are much lower than those of all Schottky defects considered. In addition, the calculated profiles of densities of states for the defective Ti₃SiC₂ indicate that these defects should have great influence on its thermal and electrical properties.     

Vibrational spectroscopic studies on Ba0.8Sr0.2TiO3 thin films prepared by RF sputtering technique

Thin films of Ba_0.8Sr_0.2TiO₃ have been deposited on p-type Si substrate by radio frequency magnetron sputtering. Polycrystalline bulk Ba_0.8Sr_0.2TiO₃ sample has also been studied for comparison. X-ray diffraction patterns reveal that both the bulk sample and thin films are polycrystalline without any preferential orientation and belong to paraelectric cubic phase. We have compared the room temperature Raman and IR spectra of powder and thin films (both annealed and as-deposited) of Ba_0.8Sr_0.2TiO₃. The extra feature in the Raman spectrum for the annealed film has been explained as due to the presence of intergrain stresses from the submicron size grains in it.     

Resonant Raman scattering in single crystal of congruent LiTaO3 : Effect of excitation energy

Large dispersion in the peak position of the OH⁻ stretching mode (∼687.9 and ∼2167.7 cm⁻¹/eV for fundamental and 3rd harmonic, respectively) is observed by Resonance Raman studies in congruent lithium tantalate single crystal under varying excitation energies. This is explained by considering the involvement of multiple LO phonons in the interaction with OH⁻ stretching vibration and the resonantly excited electrons. The intensity of the peaks is also found to vary with the excitation energy. FWHM increases with the increase in excitation energy because of individual contributions of the increasing number of resonance steps to the broadening.     

Influence of vapor transport equilibration on Raman spectra of Er:LiNbO3 crystals

Raman spectra of as-grown and vapor transport equilibration (VTE) treated Er:LiNbO₃ crystals, which have different cut orientations (X-cut and Z-cut), different Er-doping levels (Er:(0.2, 0.4 and 2.0 mol%)LiNbO₃) and different VTE durations (80, 120, 150 and 180 h), were recorded at room temperature in the wavenumber range 50-1000 cm⁻¹ by using backward scattering geometry. The spectra were attributed on the basis of their spectral features and the previous experimental work and the most recent theoretical progress in lattice dynamics on pure LiNbO₃. In comparison with the pure crystal the most remarkable effect of Er-doping on the Raman spectrum is observed for the E(TO₉) mode. It does not appear at 610 cm⁻¹ as the pure crystal, but locates at 633 cm⁻¹. In addition, the doping also results in the lowering of the Raman phonon frequency, the broadening of the Raman linewidth and the changes of the relative Raman intensity of some peaks. The VTE treatment results in the narrowing of the linewidth, the recovery of the lowered phonon frequency and the further changes of relative Raman intensity. The narrowing of Raman linewidth indicates that the VTE processing has brought these crystals closer to stoichiometric composition. The VTE treatment has induced the formation of a precipitate ErNbO₄ in the high-doped Er(2.0%):LiNbO₃ crystals whether X- or Z-cut. For these precipitated crystals, besides above linewidth and phonon frequency features, they also display more significant Raman intensity changes compared with those not precipitated crystals. In addition, a slight mixing between A₁(TO) and E(TO) spectra is also observed for these precipitated crystals. Above doping and VTE effects on Raman spectra were quantitatively or qualitatively correlated with the characteristics of the crystal structure and phonon vibrational system.     

Effects of lattice and local dynamics in EPR spectra and electron spin relaxation of vibronic Cu(imidazole)6 complexes in Zn(imidazole)6Cl2·4H2O crystals

Cu(im)₆ complexes in Zn(im)₆Cl₂·4H₂O exhibit a strong Jahn-Teller effect which is static below 100 K and the complex in localized in the two low-energy potential wells. We have reinvestigated electron paramagnetic resonance (EPR) spectra in the temperature range 4.2-300 K and determined the deformation directions produced by the Jahn-Teller effect, energy difference 11 cm⁻¹ between the wells and energy 300 cm⁻¹ of the third potential well. The electron spin relaxation was measured by electron spin echo (ESE) method in the temperature range of 4.2-45 K for single crystal and powder samples. The spin-lattice relaxation is dominated by a local mode of vibration with energy 11 cm⁻¹ at low temperatures. We suppose that this mode is due to reorientations (jumps) of the Cu(im)₆ complex between the two lowest energy potential wells. At intermediate temperatures (15-35 K), the T₁ relaxation is determined by the two-phonon Raman processes in acoustic phonon spectrum with Debye temperature Θ_D=167 K, whereas at higher temperatures the relaxation is governed by the optical phonon of energy 266 cm⁻¹. The ESE dephasing is produced by an instantaneous diffusion below 15 K with the temperature-independent phase memory time , then it grows exponentially with temperature with an activation energy of 97 cm⁻¹. This is the energy of the first excited vibronic level. The thermal population of this level leads to a transition from anisotropic to isotropic EPR spectrum observed around 90 K. FT-ESE gives ESEEM spectrum dominated by quadrupole peaks from non-coordinating ¹⁴N atom of the imidazole rings and the peak from double quantum transition ν_dq. We show that the amplitude of the ν_dq transition can be used to determine the number of non-coordinating nitrogen atoms.     

Electronic structure of BaTiO3 using resonant X-ray emission spectroscopy at the Ba-L3 and Ti-K absorption edges

We have studied the electronic properties of the ferroelectric barium titanate BaTiO₃ using two complementary bulk-sensitive spectroscopic probes, resonant X-ray emission spectroscopy (RXES) and X-ray absorption spectroscopy in the partial fluorescence mode (PFY-XAS) at the Ba-L₃ and Ti-K absorption edges. Contrary to a previous study, we found no fine structure in the pre-edge area of the PFY-XAS spectrum at the Ba-L₃ edge, and no temperature-induced spectral change was observed between room temperature and 150 °C. This result is not supportive of the possible presence of the displacement around Ba²⁺ at the Curie temperature. RXES spectra were measured at the Ti-K edge for BaTiO₃, along with SrTiO₃ and La-doped metallic SrTiO₃. The photon energy of the emission peak is found to be nearly constant throughout the absorption edge for all three compounds. We deduce the Ti 3d states to have a delocalized character, in contrast with the Ba 5d states, a property which is consistent with the proposed scenario of the formation of electric dipoles in BaTiO₃.     

Investigation of weak damage in Al0.25Ga0.75As/GaAs by using RBS/C and Raman spectroscopy

The weak damage induced by 0.8 MeV Si ion implantation in the Al_0.25Ga_0.75As films epitaxially grown on GaAs substrates was studied by using Rutherford backscattering spectrometry/channeling (RBS/C) and Raman spectroscopy. RBS/C spectra measured from the implanted samples showed rather low damage level induced by the ion implantation with ion dose from 1×10¹⁴ to 5×10¹⁵ cm⁻². The Raman spectra were measured on these samples. Two kinds of phonon modes, GaAs-like and AlAs-like, are observed, which indicate the existence of multiple phonon vibrational modes in the epitaxial Al_0.25Ga_0.75As films on the GaAs substrate. Compared with the unimplanted sample, the Raman photon peaks for the implanted sample shift gradually to lower energy with the increase of the implantation dose. The strains induced in the implanted layer were also evaluated from the Raman spectra. The result from high resolution double crystal X-ray diffractometry (HRXRD) also verified the evolution of the strains in the implanted layers.     

GaN1-xPx薄膜的结构特性研究

用金属有机物化学气相沉积技术在蓝宝石衬底上外延了高P组分的GaN_1-xP _x 薄膜.利用x射线衍射仪和拉曼光谱仪研究了P对GaN_1-xP_x晶体结构 的影响.研究结果表明：随着P组分比的增加，GaN_1-xP_x（0002）衍射 峰逐渐向小角度移动，即晶格常数变大；与非掺杂GaN相比，GaN_1-xP_x薄 膜的拉曼光谱中出现了4个新的振动模 关键词： 1-xP_x')" href="#">GaN_1-xP_x 金属有机物化学气相沉积 x射线衍射 拉曼光谱