首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 31 毫秒
1.
TiO2–Fe2O3 semiconducting films were prepared by the resistive evaporation method on a glass substrate. Impedance and optical absorption measurements were made on these samples. From the impedance analysis (assuming an equivalent RC circuit), it was observed that the admittance and impedance functions are frequency dependent. From the optical absorption spectrum, the energy band-gap value was found to be 1.15 eV. The charge-carrier concentration (N) is calculated by using Mott–Schottky relations. I-V measurements were also made on these samples. Received: 2 November 1999 / Accepted: 24 August 2000 / Published online: 9 November 2000  相似文献   

2.
A sol–gel route for TiO2 nanocrystals (NCs) synthesis has been developed at low temperature without surfactants. Synthetic and processing parameters have been optimized to maximize particles’ colloidal stability and crystallinity. The obtained TiO2 NCs can be homogeneously dispersed in a sol–gel derived organic–inorganic hybrid material, resulting in homogeneous composite films when prepared by spin coating. High refractive index films were obtained with high TiO2 NCs loading and good transparency. Furthermore, TiO2 colloidal solutions can be used for depositing porous crystalline films, whose structural evolution has been followed under different annealing treatments. Nanocrystals were characterized by UV–Vis absorption, TEM, FT-Raman, and XRD techniques, while nanocomposite and TiO2 films were analyzed by SEM, TEM, and spectroscopic ellipsometry.  相似文献   

3.
The bipolar resistive switching mechanisms of a p-type NiO film and n-type TiO2 film were examined using local probe-based measurements. Scanning probe-based current–voltage (IV) sweeps and surface potential/current maps obtained after the application of dc bias suggested that resistive switching is caused mainly by the surface redox reactions involving oxygen ions at the tip/oxide interface. This explanation can be applied generally to both p-type and n-type conducting resistive switching films. The contribution of oxygen migration to resistive switching was also observed indirectly, but only in the cases where the tip was in (quasi-) Ohmic contact with the oxide.  相似文献   

4.
In this study, two different thin films, TiO2 thin film and TiO2–W–TiO2 multi-layer thin films (W, tungsten), are prepared by RF magnetron sputtering onto glass substrates. The crystal structure, morphology, and transmittance of TiO2 and TiO2–W–TiO2 multi-layer thin films are investigated by X-ray diffraction, SEM, and UV-Vis spectrometer, respectively. The amorphous, rutile, and anatase TiO2 phases are observed in the TiO2 thin film and in the TiO2–W–TiO2 multi-layer thin films. The deposition of tungsten as the inter-layer will have large effect on the transmittance and phase ratios of rutile and anatase phases in the TiO2–W–TiO2 multi-layer thin films. The crystal intensities of amorous TiO2 will decrease as the tungsten is used as the middle layer in the multi-layer structure. The band gap energy values of TiO2 thin film and TiO2–W–TiO2 multi-layer thin films are evaluated from (αhν)1/2 versus energy plots, and the calculated results show that the energy gap decreases from 3.21 eV (TiO2 thin film) to 3.08∼3.03 EV (TiO2–W–TiO2 multi-layer thin films).  相似文献   

5.
In this work we have synthesized TiO2 nanoparticles, using either a sol–gel base catalysed process in the interior of CTAB reversed micelles (TiO2 CTAB sol), or the neutralization of a TiO2/H2SO4 solution in the interior of AOT reversed micelles. From the absorption and emission data of the TiO2 nanoparticles it is possible to conclude that in the sol–gel route there remains alkoxide groups in the structure, originating transitions lower than the energy gap of TiO2 semiconductor. These transitions disappear in the neutralization procedure, where the alkoxide groups are absent in the structure. We have assigned the observed indirect and direct optical transitions according to the anatase band structure. TiO2 Langmuir-Blodgett (LB) films were prepared either by direct deposition of titanium isopropoxide or by deposition of the TiO2 CTAB sol. These films showed photoluminescence, which was attributed to band-gap emission and to surface recombination of defect states.  相似文献   

6.
BaxSr1-xTiO3 thin films with a compositional gradient of x=0.3 to 1 (in 0.1 mole fraction increments) were fabricated on Pt/Ti/SiO2/Si substrates using a modified sol–gel technique. The graded film crystallised in a perovskite structure and consists of a uniform microstructure with comparatively larger grains. The room-temperature relative dielectric constant (εr) and dielectric loss (cosδ) at 100 kHz were found to be 305 and 0.03 respectively. Dielectric peaks were not observed in the temperature range from -20 °C to 120 °C. The dielectric constant and dielectric loss were almost independent of temperature. Polarisation–electric field measurements at room temperature revealed a saturated but slim hysteresis loop with a remanent polarisation (Pr) of 0.6 μC/cm2 and a coercive field (Ec) of 2.4 kV/mm. The graded film behaves as a stack of BaxSr1-xTiO3 capacitors connected in series and hence the dielectric Curie peaks are removed. Received: 4 October 2001 / Accepted: 17 October 2001 / Published online: 23 January 2002  相似文献   

7.
Cathodic electrodeposition is a rather unexplored route for the synthesis of mixed oxides. Two different mechanisms are generally reported which lead to oxide thin film formation: (i) the direct reduction of the oxidation state of the metallic elèment, (ii) an interfacial pH increase and local supersaturation followed by oxide precipitation. We emphasize the major requirements for mixed thin film formation via electrosynthesis and present results obtained with two different systems of special interest. The first, ZnO/Eu(OH)x, is based on the second mechanism. The second, TiO2/WO3, is a mixed mechanism process. We describe the conditions under which europium oxide can be deposited cathodically. This oxide is obtained by co-deposition with zinc oxide. After a heat treatment at 400 °C, X-ray diffraction shows that the films are mainly made of monoclinic Eu2O3. The successful WO3–TiO2 mixed film electrodeposition in a wide compositional range is also reported.  相似文献   

8.
A novel sol-gel/laser-induced technique (SGLIT) has been developed to form nanocrystalline titanium dioxide (TiO2) based thin films with an improved antibacterial performance. TiO2 precursor films loaded with W+6 and Ag+2 ions (W–TiO2, Ag–TiO2) were prepared separately by sol-gel method and spin-coated on microscopic glass slides. As-dried films were subjected to KrF excimer laser pulses at optimized parameters to generate mesoporous anatase and rutile phases at room temperature. The anatase phase was obtained after irradiation with 10 laser pulses only at 75–85 mJ/cm2 fluence in W–TiO2 films. However, higher number of laser pulses and higher W+6 content favored the formation of rutile. Whereas Ag–TiO2 films exhibited anatase up to 200 laser pulses at the same fluence. The films were characterized by using XRD, FEG-SEM, TEM and UV-Vis spectrophotometer to investigate the crystallographic structure, phase transformation, surface morphology, film thickness and the optical properties. A crystallite size of approximately 20 nm was achieved from the anatase prepared by SGLIT. The films exhibited an enhanced antibacterial function against E-Coli cells under the UV excitation.  相似文献   

9.
ZnO-coated TiO2 (ZTO) thin films were deposited on ITO substrates by a sol–gel method for application as the work electrode for dye-sensitized solar cells (DSSCs). The IV curve and the incident photon-to-current conversion efficiency (IPCE) value of DSSCs for ZTO thin films were studied and compared with single TiO2 films. The results show that the short-circuit photocurrent (J sc) and open-circuit voltage (V oc) values increased from 3.7 mA/cm2 and 0.68 V for the DSSCs with a single TiO2 film to 4.5 mA/cm2 and 0.72 V, respectively, for the DSSCs with a ZTO thin film. It indicated that the DSSCs with a ZTO thin film contributed to provide an inherent energy barrier that suppressed charge recombination significantly. In addition, the higher IPCE value in the ZTO thin film is attributed to the better charge separation by a fast electron transfer process using two semiconductors with different conduction band edges and energy positions.  相似文献   

10.
TiO2 thin films of different thickness were prepared by the Electron Beam Evaporation (EBE) method on crystal silicon. A variable angle spectroscopic ellipsometer (VASE) was used to determine the optical constants and thickness of the investigated films in the spectral range from 300 to 800 nm at incident angles of 60°, 70°, and 75°, respectively. The whole spectra have been fitted by Forouhi–Bloomer (FB) model, whose best-fit parameters reveal that both electron lifetime and band gap of TiO2 thin film have positive correlation to the film thickness. The refractive indices of TiO2 thin film increase monotonically with an increase in film thickness in the investigated spectral range. The refractive index spectra of TiO2 thin films have maxima at around 320 nm and the maxima exhibit a marginally blue-shift from 327.9 to 310.0 nm with an increase in film thickness. The evolution of structural disorder in the TiO2 thin film growth can be used to explain these phenomena.  相似文献   

11.
Solar thermal collectors have been prepared with thin TiOxNy films deposited using ion beam assisted deposition, on Si and Cu substrates. The films are amorphous and x and y were controlled by altering the O2/N2 ratio in the gas source. After annealing at temperatures of 200 – 400 °C, films have been depth profiled using Secondary Ion Mass Spectrometry. Profiles reveal the degradation of the film, particularly for films on Cu substrates, by migration of the substrate atoms through the films, to the sample surface. In general, films with x<1 and y>1 show improved temperature stability, ultimately at the expense of a reduced transmission window. Contrary to previous suggestions in the literature, the degradation mechanism initially involves the formation of a nitrogen rich phase, rather than an oxide at the film surface. On copper substrates, the nature of the films and of this phase, formed by diffusion of the substrate atoms, have been investigated by X-ray photoelectron spectroscopy (XPS). These investigations reveal complex behaviour in the early stages of film failure, with the suggestion that the initial films, at least near the surface, are two phase, and the reaction layer mixes the TiOxNy with some Ti replacement by ions from the Cu substrate.  相似文献   

12.
Transparent nano composite PVA–TiO2 and PMMA–TiO2 thin films were prepared by an easy and cost effective dip coating method. Al/PVA–TiO2/Al and Al/PMMA–TiO2/Al sandwich structures were prepared to study the dielectric behavior. The presence of metal–oxide (Ti–O) bond in the prepared films was confirmed by Fourier transform infrared spectroscopy. X-ray diffraction pattern indicated that the prepared films were predominantly amorphous in nature. Scanning electron micrographs showed cluster of TiO2 nanoparticles distributed over the film surface and also there were no cracks and pin holes on the surface. The transmittance of the films was above 80% in the visible region and the optical band gap was estimated to be about 3.77 eV and 3.78 eV respectively for PVA–TiO2 and PMMA–TiO2 films by using Tauc's plot. The determined refractive index (n) values were between 1.6 and 2.3. High value of dielectric constant (?′ = 24.6 and ?′ = 26.8) was obtained for the prepared composite films. The conduction in the composite films was found to be due to electrons. The observed amorphous structure, good optical properties and dielectric behavior of the prepared nano composite thin films indicated that these films could be used in opto-electronic devices and in thin film transistors.  相似文献   

13.
Silver nanorods with average diameters of 120-230 nm and aspect ratio of 1.7-5.0 were deposited on the surface of TiO2 films by photoelectrochemical reduction of Ag+ to Ag under UV light. The composite films prepared on soda-lime glass substrates were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show that the TiO2 film after UV irradiation in AgNO3 solution is composed of anatase phase TiO2 and metallic silver with face centered cubic structure. Other compounds cannot be found in the final films. The maximum deposition content of silver particles on the surface of TiO2 film was obtained with the AgNO3 concentration of 0.1 M. The kinetic growth rates of silver particles can be controlled by photocatalytic activity of TiO2 films. The studies suggest that the growth rates of silver particles increase with the enhancement of photocatalytic activity of TiO2 films. The maximum growth rate of silver particles loaded on TiO2 films can be up to 0.353 nm min−1 among samples 1#, 2# and 3#, while the corresponding apparent rate constant of TiO2 is 1.751 × 10−3 min−1.  相似文献   

14.
We report the epitaxial growth of sol–gel TiO2 films by using ion-irradiation enhanced synthesis. Our present study shows that the ion-beam process can provide highly crystalline TiO2 even at 350°C. Nuclear energy deposition at amorphous/crystalline interface plays a dominant role in the epitaxial growth of the films at the reduced temperature via a defect-migration mechanism. In addition, the ion irradiation allows for increasing the film density by balancing the crystallization rate and the escape rate of organic components.  相似文献   

15.
Mo-Ti oxide films with compositions ranging from MoO3 to TiO2 were prepared by reactive DC magnetron sputtering using a newly developed high-rate technique with interacting plasma zones. Optical and electrochemical measurements showed that an increase of the Ti content yielded increased electrochemical stability, decreased coloration efficiency, and increased potential for electrochromic coloration. The films have interesting properties for color-neutral electrochromic devices. Paper presented at the 2nd Euroconference on Solid State Ionics, Funchal, Madeira, Portugal, Sept. 10–16, 1995  相似文献   

16.
TiO2 sol-gels with various Ag/TiO2 molar ratios from 0 to 0.9% were used to fabricate silver-modified nano-structured TiO2 thin films using a layer-by-layer dip-coating (LLDC) technique. This technique allows obtaining TiO2 nano-structured thin films with a silver hierarchical configuration. The coating of pure TiO2 sol-gel and Ag-modified sol-gel was marked as T and A, respectively. According to the coating order and the nature of the TiO2 sol-gel, four types of the TiO2 thin films were constructed, and marked as AT (bottom layer was Ag modified, surface layer was pure TiO2), TA (bottom layer was pure TiO2, surface layer was Ag modified), TT (pure TiO2 thin film) and AA (TiO2 thin film was uniformly Ag modified). These thin films were characterized by means of linear sweep voltammetry (LSV), X-ray diffraction (XRD), scanning electron microscopy (SEM), electrochemical impedance spectroscopy and transient photocurrent (Iph). LSV confirmed the existence of Ag0 state in the TiO2 thin film. SEM and XRD experiments indicated that the sizes of the TiO2 nanoparticles of the resulting films were in the order of TT > AT > TA > AA, suggesting the gradient Ag distribution in the films. The SEM and XRD results also confirmed that Ag had an inhibition effect on the size growth of anatase nanoparticles. Photocatalytic activities of the resulting thin films were also evaluated in the photocatalytic degradation process of methyl orange. The preliminary results demonstrated the sequence of the photocatalytic activity of the resulting films was AT > TA > AA > TT. This suggested that the silver hierarchical configuration can be used to improve the photocatalytic activity of TiO2 thin film.  相似文献   

17.
The effect of plasticizer and TiO2 nanoparticles on the conductivity, chemical interaction and surface morphology of polymer electrolyte of MG49–EC–LiClO4–TiO2 has been investigated. The electrolyte films were successfully prepared by solution casting technique. The ceramic filler, TiO2, was synthesized in situ by sol-gel process and was added into the MG49–EC–LiClO4 electrolyte system. Alternating current electrochemical impedance spectroscopy was employed to investigate the ionic conductivity of the electrolyte films at 25 °C, and the analysis showed that the addition of TiO2 filler and ethylene carbonate (EC) plasticizer has increased the ionic conductivity of the electrolyte up to its optimum level. The highest conductivity of 1.1 × 10−3 Scm−1 was obtained at 30 wt.% of EC. Fourier transform infrared spectroscopy measurement was employed to study the interactions between lithium ions and oxygen atoms that occurred at carbonyl (C=O) and ether (C-O-C) groups. The scanning electron microscopy micrograph shows that the electrolyte with 30 wt.% EC posses the smoothest surface for which the highest conductivity was obtained.  相似文献   

18.
The article reports on correlations between the process parameters of reactive pulsed dc magnetron sputtering, physical properties and the photocatalytic activity (PCA) of TiO2 films sputtered at substrate surface temperature Tsurf ≤ 180 °C. Films were deposited using a dual magnetron system equipped with Ti (Ø50 mm) targets in Ar + O2 atmosphere in oxide mode of sputtering. The TiO2 films with highly photoactive anatase phase were prepared without a post-deposition thermal annealing. The decomposition rate of the acid orange 7 (AO7) solution during the photoactivation of the TiO2 film with UV light was used for characterization of the film PCA. It was found that (i) the partial pressure of oxygen pO2 and the total sputtering gas pressure pT are the key deposition parameters influencing the TiO2 film phase composition that directly affects its PCA, (ii) the structure of sputtered TiO2 films varies along the growth direction from the film/substrate interface to the film surface, (iii) ∼500 nm thick anatase TiO2 films with high PCA were prepared and (iv) the structure of sputtered TiO2 films is not affected by the substrate surface temperature Tsurf when Tsurf < 180 °C. The interruption of the sputtering process and deposition in long (tens of minutes) pulses alternating with cooling pauses has no effect on the structure and the PCA of TiO2 films and results in a decrease of maximum value of Tsurf necessary for the creation of nanocrystalline nc-TiO2 film. It was demonstrated that crystalline TiO2 films with high PCA can be sputtered at Tsurf ≤ 130 °C. Based on obtained results a phase zone model of TiO2 films was developed.  相似文献   

19.
Nanostructured TiO2 thin films were deposited on quartz glass at room temperature by sol–gel dip coating method. The effects of annealing temperature between 200C to 1100C were investigated on the structural, morphological, and optical properties of these films. The X-ray diffraction results showed that nanostructured TiO2 thin film annealed at between 200C to 600C was amorphous transformed into the anatase phase at 700C, and further into rutile phase at 1000C. The crystallite size of TiO2 thin films was increased with increasing annealing temperature. From atomic force microscopy images it was confirmed that the microstructure of annealed thin films changed from column to nubbly. Besides, surface roughness of the thin films increases from 1.82 to 5.20 nm, and at the same time, average grain size as well grows up from about 39 to 313 nm with increase of the annealing temperature. The transmittance of the thin films annealed at 1000 and 1100C was reduced significantly in the wavelength range of about 300–700 nm due to the change of crystallite phase. Refractive index and optical high dielectric constant of the n-TiO2 thin films were increased with increasing annealing temperature, and the film thickness and the optical band gap of nanostructured TiO2 thin films were decreased.  相似文献   

20.
F–B–S tri-doped titanium dioxide thin films on common glass were prepared by a modified sol–gel method, in which tetrabutyl titanate (Ti(OC4H9)4) was chosen as the precursor and boric acid (H3BO3), sodium fluoride (NaF), and thiourea (N2H4CS) were employed as boron, fluorine, and sulfur sources, respectively. The microstructure and optical property were characterized by X-ray diffraction, high-resolution field emission scanning electron microscopy, N2 adsorption–desorption isotherms, photoluminescence spectrum, and UV–Vis diffraction reflectance spectroscopy. The photocatalytic performances were evaluated by decomposition of organic dyes in solution. The experimental results revealed that the F–B–S tri-doped TiO2 thin film was composed of uniform round-like nano-particles with the size range of 5–8 nm. F–B–S tri-doping not only significantly promoted the UV-induced photodecomposition activities of TiO2 films but also extended the optical response of TiO2 red shift to visible light region, herein improving the visible light-induced degradation of organic dyes. The improvement mechanism by F–B–S tri-doping was also discussed.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号