高数值孔径光刻成像中双层底层抗反膜的优化

在高数值孔径光学光刻中,成像光入射角分布在较大范围内,传统的单底层抗反膜不足以控制抗蚀剂-衬底界面反射率(衬底反射率)。考虑照明光源形状以及掩模的影响,提出了一种新的双层底层抗反膜优化方法,依据各级衍射光光强求衬底反射率的最小权重平均值来配置膜层。针对传统掩模、衰减相移掩模以及交替相移掩模的情况,用该方法优化双层底层抗反膜。结果表明,如果成像时进入物镜光瞳的高阶光越多,高阶光光强越大,则掩模对底层抗反膜优化的影响越大。在某些成像条件下,如使用交替相移掩模实现成像,有必要在底层抗反膜优化中考虑掩模的影响。     

高数值孔径光学光刻成像中的体效应

为有效控制成像线宽,研究了高数值孔径光学光刻中的体效应并提出一种光刻胶膜层优化方法,利用成像中的摇摆效应平衡体效应对成像线宽的影响.首先根据系统数值孔径和照明相干因子确定成像光入射角分布,相对所有入射光求出光刻胶底面单位体积吸收的能量平均值.然后用最小二乘法拟合得到能量平均值随光刻胶厚度变化的解析式并求能量平均值的导数.最后通过优化光刻胶膜层,使能量平均值的导数绝对值最小.按优化结果设计光刻胶膜层,利用商业光刻软件Prolith9.0得到成像线宽随光刻胶厚度的变化.结果表明,该方法能在30～40nm的光刻胶厚度范围,有效地减小由体效应引起的成像线宽的变化.     

组合倍率极紫外光刻物镜系统梯度膜设计方法

随着极紫外(EUV)光刻物镜的设计朝着组合倍率物镜系统的方向发展,物镜系统需要同时具有大视场和高数值孔径(NA),因而产生了物镜的光线入射角及入射角范围急剧增大的问题,需要研究适用于组合倍率极紫外光刻物镜系统的膜层设计的新方法。提出了渐进优化膜层的设计方法,该方法提高了镀制膜层的物镜系统的反射率,保证了组合倍率物镜系统的成像质量。利用该方法对NA为0.6的组合倍率物镜系统进行了膜层设计,设计结果表明,含膜极紫外光刻物镜系统的平均反射率大于65%,各反射镜的反射率峰谷值均小于3.35%,反射率均匀性良好。     

组合倍率极紫外光刻物镜梯度膜设计EI北大核心CSCD

10nm以下光刻技术牵引极紫外(EUV)光刻物镜向超高数值孔径(NA)、组合倍率设计形式发展,物镜系统的入射角和入射角范围因此急剧增大,传统规整膜和横向梯度膜难以满足该类物镜系统反射率及像质要求。为此,提出了横纵梯度膜组合法,用横向梯度膜提高反射率,用纵向梯度膜提高反射率均匀性,并补偿横向梯度膜引入的像差。应用该方法对一套NA为0.50的组合倍率EUV光刻物镜进行膜层设计,设计结果表明,在保证系统成像性能不变的情况下,平均每面反射镜的反射率大于60%,各反射镜的反射峰谷值均小于3.5%,满足光刻要求,验证了横纵梯度膜组合法的可行性。     

组合倍率极紫外光刻物镜梯度膜设计

10nm以下光刻技术牵引极紫外(EUV)光刻物镜向超高数值孔径(NA)、组合倍率设计形式发展,物镜系统的入射角和入射角范围因此急剧增大,传统规整膜和横向梯度膜难以满足该类物镜系统反射率及像质要求。为此,提出了横纵梯度膜组合法,用横向梯度膜提高反射率,用纵向梯度膜提高反射率均匀性,并补偿横向梯度膜引入的像差。应用该方法对一套NA为0.50的组合倍率EUV光刻物镜进行膜层设计,设计结果表明,在保证系统成像性能不变的情况下,平均每面反射镜的反射率大于60%,各反射镜的反射峰谷值均小于3.5%,满足光刻要求,验证了横纵梯度膜组合法的可行性。     

单轴晶体的光程差和Lyot型滤光器的视场

 建立了以光线入射方向和晶体光轴方向为基准的入射坐标系，利用波法线反曲面方程和电磁场在晶体折射界面处切向分量连续性的边界条件，得到了晶体中波法线方向、射线方向、波法线折射率和射线折射率的表达式。从非常光的射线方向和射线折射率出发，得到了在任意的晶体光轴方向和入射角条件下，光通过单轴晶体后寻常光、非常光的光程差表达式。对Lyot型滤光单元的透射率和视场进行了计算分析后发现，滤光单元的透射率随光线入射角的变化呈现一定的周期性，视场随光轴倾角的增大而减小。得出了透射率和视场随光轴倾角(光轴与晶体表面的夹角)和光线入射角(光线在晶体表面的入射角)的变化规律。讨论了通过改变晶体倾角实现滤光器调谐和补偿晶体厚度加工误差等技术问题。     

光管理在晶体硅电池中的应用

光管理是提高晶体硅太阳能电池光吸收和短路电流（Jsc）进而提高转换效率的重要因素之一。本文回顾了最常见的光管理方式,包括表面抗反射、散射以及陷光等。为了降低晶体硅电池的表面反射损失,开发了多种表面抗反射结构。例如,仿生蛾眼结构利用渐变折射率实现了宽光谱低反射率,其表面反射率可达1％以下。随着晶体硅电池衬底减薄,光管理要求更加严格,除了在更宽波长范围内达到超低反射率外,还需要在更高的入射角范围内实现低反射率。此外,利用前表面散射以及背表面陷光结构提高红外光的吸收光程对于晶体硅电池特别是薄衬底晶体硅电池的有效光吸收具有重要意义。     

基于针法的平板偏振膜设计

利用针(needle)法优化技术,分别以两种不同厚度的高折射率单层膜为初始膜系,设计得到了平板偏振膜。当入射角为56°时,在中心波长1053 nm附近不小于20 nm的带宽范围内,偏振膜的p光反射率Rp2%,s光反射率Rs99.5%,且消光比(Tp/Ts)200。角度特性分析结果表明,在入射角由53°增大至59°的过程中,两偏振膜的光学性能均满足设计要求,但偏振带却向短波长方向发生了移动,且带宽增大。根据蒙特卡罗容差分析,在各膜层膜厚误差独立的监控方式下,要保证成品率高于90%,则两偏振膜的最大容许膜厚标准偏差分别为1.20%和1.35%。     

ECRCVD技术淀积太阳电池的减反膜

本文报道了用电子回旋共振化学气相淀积(ECRCVD)技术实现了低温(50℃)淀积SiON/SiN膜作硅太阳电池减反射膜的实验研究.探讨了影响薄膜性能的主要工艺参数,设计了具有较佳抗反效果的双层减反膜,并对膜层的反射率和太阳电池参数进行了测定.结果表明:该减反膜具有良好的减反效果,能实现较宽波段范围内的均匀增透,使太阳电池短路电流密度提高了42%,电池转换效率提高了45%.     

纳米光刻中调焦调平测量系统的工艺相关性

随着半导体制造步入1xnm技术节点时代,光刻机中的对焦控制精度需要达到几十纳米。在纳米精度范围内,硅片上的集成电路(IC)工艺显著影响调焦调平系统的测量精度。基于实际的调焦调平光学系统模型和三角法、叠栅条纹法测量原理,建立工艺相关性误差模型。研究表明,工艺相关性误差主要来源于测量光在光刻胶涂层内部的多次反射。选取3种光刻胶仿真分析发现,不同光刻胶的工艺相关性误差随光刻胶厚度的变化趋势相同,随测量光入射角(45°~85°)的增大而减小。在实验验证平台上分别测量7种工艺硅片,实验测量值与理论模型计算值差异统计平均值小于6nm。结果表明,光刻机中调焦调平系统的测量光有必要采用大入射角度,同时提高光刻胶的涂胶均匀性,以减少工艺相关性误差。     

Wafer-level fabrication and optical characterization of nanoscale patterned sapphire substrates

The wafer-level aperiodic nanostructures were fabricated atop the sapphire substrates in order to increase the transmittance over broadband spectra. The fabrication was presented along with characterization of their optical properties. The nanostructures were patterned using natural lithography with nickel silicide as a hard mask, and the subsequent etching was performed using inductively coupled plasma dry-etching method. The sapphire substrates with nanostructures compared to conventional sapphire substrates, which exhibit antireflective characteristics over broadband spectra at a wide range of incident angles. The nanostructures reduce the reflection down to 5% in the visible spectrum for normal incidence. The transmittance of visible to near-IR spectra was found to be 94% at normal incidence and over 90% at an incident angle of 45°. In the mid-IR spectrum, the transmittance exceeds 88% until the reflection is no longer suppressed by nanostructures. The polarization properties have also been investigated. The nanostructures can enhance the reflectivity ratio 90% for wavelengths shorter than 400 nm. As the amplitude ratio, enhanced from 50% to 80% over the whole visible spectrum.     

太赫兹波探测光子晶体涂层覆盖目标的可行性

覆盖于高温目标表面的光子晶体红外涂层可实现对目标红外辐射的抑制,而太赫兹波所具有的强穿透特性使其对该类目标的探测成为可能。以相关文献中设计的光子晶体涂层为例,采用特征矩阵理论对0.3~3 THz频率范围内的太赫兹波在该类涂层中的传输特性进行理论计算和分析,重点研究了不同入射角度的太赫兹波在该类涂层中的传输特性。研究发现,上述太赫兹波段处于光子晶体的带隙之外,0.3~0.5 THz频率范围内的太赫兹波对该类红外涂层具有较强的穿透特性,其光谱透过率大于90%;而在2.4~3 THz范围内,其在涂层上具有较强的反射,且整个波段内的吸收率小于0.2%。当入射角小于60°时,其对太赫兹波的传输特性影响较小;进一步增大入射角,其透过率逐渐降低,而反射率逐渐增大。研究结果证明了利用太赫兹波进行涂层覆盖目标探测的可行性,有望利用太赫兹雷达探测弥补红外探测系统的不足。     

Resonant amplification of frustrated evanescent waves by single dielectric coating

Resonant amplification and enhancement of evanescent wave’s frustration across an optical barrier by using single dielectric coating is numerically demonstrated in this article. With further tuning of the thickness values of the second and the third medium (optical barrier) of the proposed stratified four-media configuration, it is shown that it may be possible to achieve unity transmittance at discrete, but closely spaced incident angles within the full range defined by the theoretical cut-off limit. The designed configuration may have other potential applications than lithography and waveguide design is one such example.     

NA1.35投影光刻光学系统偏振像差的优化

为了实现NA1.35投影光刻光学系统高质量成像，在设计过程中除了控制波像差，还需进一步优化光学系统的偏振像差。利用Jones光瞳和物理光瞳表达了NA1.35投影光刻光学系统的偏振像差，并用二向衰减量与延迟量分析了光学系统偏振像差的大小；根据光线入射到不同光学面上最大入射角度的不同，为每个光学面设计相应的膜系以优化光学系统的偏振像差。相比于采用常规膜系，膜系优化后NA1.35投影光刻光学系统的二向衰减量和延迟量分别减小到了0.021 8、0.057 2 rad，即减小了光学系统的偏振像差。利用Prolith光刻仿真软件，分别对采用常规膜系和优化膜系的NA1.35投影光刻光学系统进行曝光性能仿真，结果显示:膜系优化后光学系统的成像对比度提高了4.4%，证明了NA1.35投影光刻光学系统偏振像差优化方法的有效性。     

硅表面抗反射纳米周期阵列结构的纳米压印制备与性能研究

硅表面固有的菲涅耳反射, 使得硅基半导体光电器件(如太阳能电池、红外探测器)表面有30%以上的入射光因反射而损失掉, 严重影响着器件的光电转换效率. 寻找一种方法降低硅基表面的反射率, 进而提高器件的效率成为近年来研究的重点.本文基于纳米压印光刻技术, 在2 英寸单晶硅表面制备出周期530 nm, 高240 nm的二维六角截顶抛面纳米柱阵列结构. 反射率的测试表明, 当入射光角度为8° 时, 有纳米结构的硅片相对于无纳米 结构的硅片来讲, 在400到2500 nm波长范围内的反射率有很明显的降低, 其中, 800到2000 nm波段的反射率都小于10%, 在波长1360 nm附近的反射率由31%降低为零. 结合等效介质理论和严格耦合波理论对结果进行了分析和验证. 关键词： 纳米压印 截顶抛物面阵列 抗反射 等效介质理论     

Luus-Jaakola optimization procedure for multilayer optical coatings

Designing multilayer optical coatings is a difficult optimization problem because of the huge size of the search space. In the present paper, the Luus-Jaakola (LJ) optimization procedure, a new optimization algorithm, is employed to model multilayer optical coatings in the X-ray domain. With this algorithm it is not necessary to specify initially the number of layers present in a design. Only an upper limit needs to be defined. The algorithm has been used to maximize the reflectivity over a range of incident angles at a fixed wavelength, and over a wavelength range at a fixed incident angle. The results show that the LJ algorithm can be effectively applied to the design of multilayer optical coatings resulting in fewer layers than obtained using alternative optimization methods.     

Spectrophotometric measurements on a titanium dioxide film with columnar-structure-induced anisotropy

A procedure combining spectrophotometry and measurements of reflectance and transmittance versus incident angles (R/T method) is developed to characterize an obliquely evaporated titanium dioxide (TiO₂) film. The R/T method determines the thickness and columnar orientation of the film. The film thickness can be measured with an uncertainty less than 10 nm. Optical constants of the film over a spectral range of 450 nm to 900 nm are obtained from spectrophotometric measurements with an accuracy around one percent.     

Hybrid approach for the design of mirror array to produce freeform illumination sources in immersion lithography

Source and mask optimization (SMO) has emerged as a key resolution enhancement technique (RET) for 45 nm technology node and below in lithography. The design method of freeform illumination sources predicted by SMO is significant for the scanner development. We present a hybrid approach combining simultaneous and sequential approaches to optimize the tilt angles of the mirrors to produce multi target freeform illumination sources accurately and quickly. The size of spot reflect by plane mirror can be easily controlled by changing different microlens arrays with appropriate focal length, which reduce the complexity of the system and makes it more flexible to produce the specific freeform sources compared to curving the mirrors used in previous work. The relationship between the tilt angles of plane mirrors and the positions of the spots in the pupil is obtained by chief ray tracing. Using the hybrid approach the freeform illumination sources required by SMO can be designed by merely adjusting the tilt angles of mirrors without changing other parameters of optical elements, which is most effective for both lithography tool manufacture and its applications. The real ray tracing results demonstrate that our design method is capable of creating multi freeform illumination sources with high transmittance, and confirm that the effectiveness of the hybrid approach for optimized design and control of mirror array in immersion lithography system.