Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures

The confinement energy of T-shaped quantum wires (QWRs), which were fabricated by the cleaved edge overgrowth technique in a way that the QWRs form at the intersection of In_0.2Al_0.8As stressor layers and the overgrown (1 1 0) GaAs quantum well (QW), is examined using micro-photoluminescence spectroscopy. Photoluminescence (PL) signals from individual QWRs can be spatially resolved, since the strained films are separated by 1 μm wide Al_0.3Ga_0.7As layers. We find that due to the tensile strain being transmitted to the QW, the confinement energy of the QWRs rises systematically up to 40 meV with increasing thickness of the stressor layers. By reducing the excitation power to 0.1 μW the QWR PL emission occurs 48 meV redshifted with respect to the QW. All QWR peaks exhibit smooth lineshapes, indicating the absence of pronounced exciton localization.     

Absence of a holelike fermi surface for the iron-based K0.8F1.7Se2 superconductor revealed by angle-resolved photoemission spectroscopy

We have performed an angle-resolved photoemission spectroscopy study of the new iron-based superconductor K(0.8)Fe(1.7)Se(2) (T(c)～30 K). Clear band dispersion is observed with the overall bandwidth renormalized by a factor of 2.5 compared to our local density approximation calculations, indicating relatively strong correlation effects. Only an electronlike band crosses the Fermi energy, forming a nearly circular Fermi surface (FS) at M (π, 0). The holelike band at Γ sinks ～90 meV below the Fermi energy, with an indirect band gap of 30 meV, to the bottom of the electronlike band. The observed FS topology in this superconductor favors (π, π) inter-FS scattering between the electronlike FSs at the M points, in sharp contrast to other iron-based superconductors which favor (π, 0) inter-FS scattering between holelike and electronlike FSs.     

Symmetry of standing waves generated by a point defect in epitaxial graphene

Using scanning tunneling microscopy (STM) and Fourier Transform STM (FT-STM), we have studied a point defect in epitaxial graphene grown on silicon carbide substrate. We find a strong threefold anisotropy in the standing waves generated by the defect. We discuss possible relations between this anisotropy and the chirality of the electrons, and how it allows us to identify the position of the impurity. We extract the quasiparticle energy dispersion, and give a first experimental proof of the validity of Fermi liquid theory in graphene for a wide range of energies from -800 meV to +800 meV. All experimental measurements are compared and related to theoretical T-matrix calculations.     

Strong energy dependence of the electron-phonon coupling strength on Bi(100)

We have studied the energy dependence of the electron-phonon coupling strength on Bi(100). A fit of the temperature-dependent surface state linewidth results in a change of the coupling parameter lambda from 0.20+/-0.02 to 0.72+/-0.05 as the binding energy of the surface state increases from 70 to 330 meV. This result cannot be reconciled with the usual interpretation of lambda as the electron-phonon mass enhancement parameter at the Fermi energy. We suggest that this behavior is mainly caused by the strong energy dependence of the bulk density of states in this region.     

Binding energy of localized trions in quantum wires

We present a finite difference calculation of the binding energies of localized trions in quasi-one-dimensional quantum wires (QWRs). It is found that both the lateral confinement and the localization potential have a strong effect on the relative stability of the trions. It is confirmed that a weak localization potential not only enhances the binding energy but also changes the relative stability of the positive and negative trions. Our theoretical model is in good accord with a recent experiment regarding photoluminescence in disordered QWRs.     

Ultrasensitive terahertz/infrared waveguide modulators based on multilayer graphene metamaterials

This paper studies and classifies the electromagnetic regimes of multilayer graphene‐dielectric artificial metamaterials in the terahertz/infrared range. The employment of such composites for waveguide‐integrated modulators is analysed and three examples of novel tunable devices are presented. The first one is a modulator with excellent ON‐state transmission and very high modulation depth: >38 dB at 70 meV graphene's electrochemical potential (Fermi energy) change. The second one is a modulator with extreme sensitivity towards graphene's Fermi energy ‐ a minute 1 meV variation of the latter leads to >13.2 dB modulation depth. The third one is a tunable waveguide‐based passband filter. The narrow‐band cut‐off conditions around the ON‐state allow the latter to shift its central frequency by 1.25% per every meV graphene's Fermi energy change.     

Indication of charge-density-wave formation in Bi(111)

Photoemission spectroscopy of Bi(111) reveals a small hexagonal two-dimensional Fermi surface (FS) associated with an electron band centered in the surface Brillouin zone. Along the hexagon the Fermi momentum k(F) ranges from 0.053 to 0.061 A(-1). Temperature dependent valence band spectra show an anisotropic energy gap Delta near the Fermi level. We find a transition temperature of about 75 K. At 11 K, the gap is Delta=4 meV at the corner and Delta=7.5 meV at the side of the hexagon. Arguments based on susceptibility chi(--> q) calculations of a hexagonal FS are used to discuss an incommensurate charge-density-wave (CDW) formation associated with a q(CDW)=0.106 A(-1).     

InGaAs/GaAs应变脊形量子线分子束外延非平面生长研究

提出了新型InGaAs/GaAs应变脊形量子线结构．这种应变脊形量子线结合了非平面应变外延层中沿不同晶向能带带隙的变化、非平面生长应变层In组分的变化，以及非平面外延层厚度的变化等三方面共同形成的横向量子限制效应的综合作用．在非平面GaAs衬底上用分子束外延生长了侧面取向为（113）的脊形AlAs/In GaAs/AlAs应变量子线．用10K光致荧光谱测试了其发光性质．用Kronig-Penney模型近似计算了这种应变脊形结构所具有的横向量子限制效应，发现其光致荧光谱峰位的测试结果，与计算结果相比，有10meV的“蓝移”．认为这一跃迁能量的“蓝移”是上述三方面横向量子限制效应综合作用的结果 关键词：     

Investigation of Mn incorporation in fifteen-period InGaAs/GaAs quantum well system

A ferromagnetic ordering with a Curie temperature of 50 K of fifteen layer of InGaMnAs/GaAs multi quantum wells (MQWs) structure grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE) was found. It is likely that the ferromagnetic exchange coupling of sample with Curie temperature of 50 K is hole-mediated resulting in Mn substituting In or Ga sites. Temperature and excitation power dependent PL emission spectra of InGaMnAs MQWs sample grown at temperature of 170 °C show that an activation energy of Mn ion on the first quantum confinement level in InGaAs quantum well is 36 meV and impurity Mn is partly ionized. It is found that the activation energy of 36 meV of Mn ion in the QW is lower than the activation energy of 110 meV for a substitutional Mn impurity in GaAs. These measurements provide strong evidence that an impurity band existing in the bandgap due to substitutional Mn ions and it is the location of the Fermi level within the impurity band that determines Curie temperature.     

Inelastic photoemission due to scattering by surface adsorbate vibrations

By measuring the very low energy photoemission spectra of the CO/Cu(001) surface with a high resolution, we have found the energy loss components due to inelastic scattering of electrons near the Fermi level by the CO vibrational modes. The main energy loss structure appears as a step at 254 meV below the Fermi edge for 12C16O. An isotope shift of the step to 240 meV was observed when 13C18O was adsorbed. This observation confirms that this step arises from the energy loss of photoelectrons near the Fermi level through the excitation of the C-O stretching mode.     

Step-lattice-induced band-gap opening at the fermi level

The interaction of the Shockley surface state with the step lattice of vicinal Cu(111) leads to the formation of an electronic superlattice state. On Cu(443), where the average terrace length forms a "shape resonance" with the Fermi wavelength, we find a step-lattice-induced band-gap opening at the Fermi level. A gap magnitude >200 meV is inferred from high resolution photoemission experiments and line shape analysis. The corresponding energy gain with respect to a gapless case is approximately 11 meV/unit cell, and is a substantial contribution to the stabilization of the step lattice.     

From fractional exclusion statistics back to Bose and Fermi distributions

Fractional exclusion statistics (FES) is a generalization of the Bose and Fermi statistics. Typically, systems of interacting particles are described as ideal FES systems and the properties of the FES systems are calculated from the properties of the interacting systems. In this Letter I reverse the process and I show that a FES system may be described in general as a gas of quasiparticles which obey Bose or Fermi distributions; the energies of the newly defined quasiparticles are calculated starting from the FES equations for the equilibrium particle distribution. In the end I use a system in the effective mass approximation as an example to show how the procedure works.     

Copper,the dominant acceptor in refined,undoped zinc telluride

Comparative measurements have been made of optical absorption and photoluminescence of refined undoped and Cu in-diffused ZnTe single crystals. Strong increases in a bound exciton BE line near 2.375 eV previously identified with the electrically dominant point defect acceptor ‘a’, with binding energy E_A ? 149 meV, suggests that this acceptor is substitutional Cu_Zn. Similarly strong increases in a relatively broad band at slightly higher energy suggests the simultaneous incorporation of shallow donors, possibly interstital Cu_I. These findings indicate that intrinsic defects such as V_Zn neither control the Fermi level in refined ZnTe nor produce shallow acceptors with E_A ? 250 meV, contrary to much previous speculation.     

High-energy limit of massless Dirac fermions in multilayer graphene using magneto-optical transmission spectroscopy

We have investigated the absorption spectrum of multilayer graphene in high magnetic fields. The low-energy part of the spectrum of electrons in graphene is well described by the relativistic Dirac equation with a linear dispersion relation. However, at higher energies (>500 meV) a deviation from the ideal behavior of Dirac particles is observed. At an energy of 1.25 eV, the deviation from linearity is approximately 40 meV. This result is in good agreement with the theoretical model, which includes trigonal warping of the Fermi surface and higher-order band corrections. Polarization-resolved measurements show no observable electron-hole asymmetry.     

Detection of the frustrated rotation mode of CO on Cu(0 0 1) by very low energy photoelectron spectroscopy

We have measured the very low energy photoelectron spectra of the clean and CO covered Cu(0 0 1) surfaces at low temperature (15 K). A step at 34.5 meV below the Fermi level appeared in the CO/Cu(0 0 1) spectra, while no structure was found at the same position in the clean Cu(0 0 1) spectrum. Furthermore, we have succeeded in measuring the spectral shift of the step to 33.2 meV below the Fermi level by isotopic substitution of the CO molecule. We have concluded that this step originates from the inelastic scattering of photoelectrons through excitation of the frustrated rotation mode of the CO molecule.     

First-principles study of electronic structure and ferromagnetism in Ti-doped ZnO

We perform first-principles spin polarized calculations of the electronic structure of Ti-doped in ZnO. Ferromagnetism in Ti-doped ZnO is identified, which is in agreement with recent experimental and calculated results. A net magnetic moment of 0.715μ_B is found per Ti. At a Ti concentration of 12.5%, total energy calculations show that the ferromagnetic state is 68 meV lower than the antiferromagnetic state. The electronic states near Fermi energy are dominated by strong hybridization between O 2p and Ti 3d, which is just the origin of impurity band in Ti-doped ZnO and also implies that the Ti-O bond is quite covalent instead of purely ionic. Since there is no magnetic element in this compound, Ti-doped ZnO appears to be an unambiguous dilute magnetic semiconductor.     

Angle-resolved photoemission experiments on Bi2Sr2CaCu2O8+δ(001)

Core-level X-ray photoelectron-diffraction patterns have been measured from cleaved Bi₂Sr₂CaCu₂O₈₊ (001) surfaces for all elements present in this compound. The incommensurate modulation alongb ([010]) leads to a strong inequivalence ofa- andb-directions for Bi, Sr and Cu photoelectrons, while Ca and O emission show less effect. Ultraviolet-photoemission experiments recording the emission intensity at the Fermi energy over a large solid angle are also presented, providing a direct mapping of the Fermi surface. Ac(2×2) superstructure is observed on the Fermi surface suggesting antiferromagnetic correlations within the Cu–O planes. The effects of the lattice modulation are clearly observable at the Fermi energy, and they are enhanced for binding energies higher than a few tens of meV.     

Effects of photoexcitation on the current transport mechanism in amorphous indium selenide thin films

The effect of photoexcitation on the current transport mechanism in amorphous indium selenide thin films was studied by means of dark and illuminated conductivity measurements as a function of temperature. Analysis of the dark electrical conductivity in the temperature range 110–320 K reveals behaviour characteristic of carriers excited to the conduction band and thermally assisted variable-range hopping (VRH) at the Fermi level above 280 K and below 220 K, respectively. In the temperature range 220–280 K, a mixed conduction mechanism was observed. A conductivity activation energy of ～300 meV (above 280 K), a density of localised states (evaluated assuming a localisation length of 5 Å) of 1.08 × 10²¹ cm^?3 eV^?1, an average hopping distance of 20.03 Å (at 120 K) and an average hopping energy of 27.64 meV have been determined from the dark electrical measurements. When the sample was exposed to illumination at a specific excitation flux and energy, the values of the conductivity activation energy, the average hopping energy and the average hopping range were significantly decreased. On the other hand, the density of localised states near the Fermi level increased when the light flux was increased. Such behaviour was attributed to a reversible Fermi level shift on photoexcitation.     

Anomalies in the Fermi surface and band dispersion of quasi-one-dimensional CuO chains in the high-temperature superconductor YBa2Cu4O8

We have investigated the electronic states in quasi-one-dimensional CuO chains by microprobe angle resolved photoemission spectroscopy. We find that the quasiparticle Fermi surface consists of six disconnected segments, consistent with recent theoretical calculations that predict the formation of narrow, elongated Fermi surface pockets for coupled CuO chains. In addition, we find a strong renormalization effect with a significant kink structure in the band dispersion. The properties of this latter effect [energy scale (～40 meV), temperature dependence, and behavior with Zn-doping] are identical to those of the bosonic mode observed in CuO2 planes of high-temperature superconductors, indicating they have a common origin.     

Carrier relaxation in epitaxial graphene photoexcited near the Dirac point

We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 to 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy is tuned to values below the optical-phonon frequency; however, owing to the presence of hot carriers, optical-phonon emission is still the predominant relaxation process. For photon energies about twice the value of the Fermi energy, a transition from pump-induced transmission to pump-induced absorption occurs due to the interplay of interband and intraband processes.