Dynamic hyperfine interactions in In(Cd)-doped ZnO semiconductor: PAC results supported by ab initio calculations

In this work, we present results of Time-Differential γ–γ Perturbed-Angular-Correlations (PAC) experiments performed in ¹¹¹Cd-doped ZnO semiconductor. The PAC technique has been applied in order to characterize the electric-field-gradient (EFG) tensor at (¹¹¹In (EC)→) ¹¹¹Cd nuclei located, as was later demonstrated, at defect-free cation sites of the ZnO host structure. The PAC experiments were performed in the temperature range of 77–1075 K. At first glance, the unexpected presence of low-intensity dynamic hyperfine interactions was observed, which were analyzed with a perturbation factor based on the Bäverstam and Othaz model. The experimental EFG results were compared with ab initio calculations performed with the Full-Potential Augmented Plane Wave plus local orbital (FP-APW+lo) method, in the framework of the Density Functional Theory (DFT), using the Wien2K code. The presence of the dynamic hyperfine interactions has been analyzed enlightened by the FP-APW+lo calculations of the EFG performed as a function of the charge state of the cell. We could correlate the large strength of the dynamic hyperfine interaction with the strong variation of the EFG due to changes in the electronic charge distribution in the Cd vicinity during the time-window of the PAC measurement. It was also revealed that the Cd impurity decays to a final stable neutral charge state (Cd²⁺) fast enough (in few ns) to produce the nearly undamped observed PAC spectra.     

Measurement of Quadrupole Interactions in LaMO3 (M = Cr,Fe, Co) Perovskites by TDPAC

The perturbed angular correlation (PAC) technique has been used to study the electric field gradient (EFG) in LaCoO₃ perovskite. The results are compared with those for LaCrO₃, LaFeO₃ measured earlier. The PAC probe, ¹¹¹In → ¹¹¹Cd, was introduced in the oxide lattice by means of chemical reaction during sample preparation. In the present work, the temperature dependence of the electric quadrupole interaction parameters, for LaCoO₃ was investigated. The resulting systematics of EFG at ¹¹¹Cd, in La(Cr,Fe,Co)O₃ perovskites, reveals a linear dependence with temperature. This revised version was published online in September 2006 with corrections to the Cover Date.     

Ionic and electronic transport in In2S3 studied via perturbed angular correlation spectroscopy

We report on Perturbed Angular Correlation measurements in polycrystalline In₂S₃ samples in the temperature range from 8 K to 1000 K where two different crystallographic phases β and α occur. As probes, implanted ¹¹¹In nuclei have been used. The three observed EFGs are attributed to probes residing substitutionally in the different sulfur-octahedra and -tetrahedra of β-In₂S₃. A strong damping between 150 K and 300 K has been attributed to EFG fluctuations following the ¹¹¹In(EC)¹¹¹Cd decay. The α-phase (above 680 K) is characterized by a different dynamical damping of the perturbation functions, caused by mobile In atoms. Therefore, the semiconductor In₂S₃ shows, in two different temperature ranges, dynamical PAC-spectra which correspond to different types of mobile charge carriers. Since ¹¹¹In is a self atom in In₂S₃, this compound is an ideal substance to study the charge transport phenomena by the PAC technique. This revised version was published online in August 2006 with corrections to the Cover Date.     

The Nonanuclear [Mo(IV){(CN)Fe(III)(3-ethoxy-saldptn)}8]Cl4 Complex Compound Exhibits Multiple Spin Transitions Observed by Mössbauer Spectroscopy

The hyperfine interactions at ¹⁸¹Ta ions on Fe³⁺ sites in α-Fe₂O₃ (hematite) were studied in the temperature range 11–1100 K by means of the perturbed angular correlation (PAC) technique. The ¹⁸¹Hf(β⁻)¹⁸¹Ta probe nuclei were introduced chemically into the sample during the preparation. The hyperfine interaction measurements allow to observe the magnetic phase transition and to characterize the supertransferred hyperfine magnetic field B_hf and the electric field gradient (EFG) at the impurity sites. The angles between B_hf and the principal axes of the EFG were determined. The Morin transition was also observed. The results are compared with those of similar experiments carried out using ¹¹¹Cd probe. ^aAlso at Comisión de Investigaciones Científicas de la Provincia de Buenos Aires, Argentina.     

Mössbauer Studies on Nanocrystalline Diol Capped γ-Fe2O3

Nanocrystalline indium (nano-In) was prepared with different particle sizes by electrochemical deposition. The temperature dependence of the local electric field gradient (EFG) of nano-In was investigated in a temperature range of 20–300 K using the probe ¹¹¹In for perturbed γγ angular correlation (PAC) experiments. The temperature dependence of the EFG of nano-In can be described by a (1−BT ^3/2) dependence as in bulk-In. It is shown that the low temperature value of the EFG and the proportionality constant B vary systematically with particle size.     

Electric field gradient in bixbyite rare-earth oxides R2O3 (R=Tl,Eu, Lu,Tm) measured by perturbed angular correlation

The electric field gradient (EFG) at ¹¹¹Cd nuclei dilutely substituting the cation site in bixbyite rare-earth oxides Tl₂O₃, Eu₂O₃, Lu₂O₃ and Tm₂O₃ has been measured using perturbed angular correlation technique. The ¹¹¹In(EC) ¹¹¹Cd probe nuclei were introduced into the samples by thermal diffusion. The experimental EFG values are compared with those calculated using the point charge model (PCM). The results are discussed in terms of a correlation between the electric field gradient and cation–oxygen bond length in metal oxides. This revised version was published online in August 2006 with corrections to the Cover Date.     

Non-ionic contributions to the electric-field gradient at 111Cd/181Ta impurities in bixbyites

The electric-field-gradient (EFG) tensor at both cation sites of the bixbyite structure in ¹⁸¹Hf-implanted Lu- and Sm-sesquioxides was determined by the PAC technique. The cumulated EFG data at Ta-impurity sites in binary oxides enable us to discuss the “universal” character of the empirical correlation between local and ionic contributions to the EFG in these systems. An EFG factorization in terms of the electronic characteristics of the probe and the geometry of the cation coordination is proposed, which explains the experimental EFG results at Ta/Cd impurity sites in bixbyites and agrees with a simplified decomposition of the EFG valence contribution coming from ab-initio calculations. This revised version was published online in August 2006 with corrections to the Cover Date.     

Angular dependence of the PAC spectrum in a quenched single crystal of cadmium

To examine the orientation and magnitude of the electric field gradient (EFG) created by a vacancy at the¹¹¹In probe site, PAC spectra were measured in a Cd single crystal as a function of the crystal orientation after a quenching and aging treatment at 120 K. The results are compared with calculated spectra based on a point charge model of the EFG created by a vacancy at the site of the probe atom.     

Fe-Hydroxysulphates from Bacterial Fe2+ Oxidation

The perturbed angular correlation method (PAC) was applied to investigate the lattice location of implanted ¹¹¹In probe ions in Hf₂Ni and Zr₂Ni intermetallic compounds. It is concluded that the ¹¹¹In/¹¹¹Cd probe nuclei experiencing the highly asymmetric electric field gradient (EFG) occupy the unique hafnium or zirconium 8(h) sites in the investigated phases. Above room temperature, the EFGs decrease linearly with temperature. The results are compared with that of previous PAC measurements with ¹⁸¹Ta probes.     

Site occupation of indium and jump frequencies of cadmium in FeGa<Subscript><Emphasis Type="Bold">3</Emphasis></Subscript>

Perturbed angular correlation (PAC) measurements using the In-111 probe were carried out on FeGa₃ as part of a broader investigation of indium site occupation and cadmium diffusion in intermetallic compounds. One PAC signal was observed with hyperfine parameters ω ₁= 513.8(1) Mrad/s and η= 0.939(2) at room temperature. By comparison with quadrupole frequencies observed in PAC measurements on isostructural RuIn₃, it was determined that indium occupies only the 8j site in the FeGa₃ structure, denoted Ga(2) below because two out of the three Ga sites have this point symmetry. PAC spectra at elevated temperature exhibited damping characteristic of electric field gradients (EFGs) that fluctuate as Cd probes jump among Ga(2) sites within the lifetime of the excited PAC level. A stochastic model for the EFG fluctuations based on four conceivable, single-step jump-pathways connecting one Ga(2) site to neighboring Ga(2) sites was developed and used to fit PAC spectra. The four pathways lead to two observable EFG reorientation rates, and these reorientation rates were found to be strongly dependent on EFG orientation. Calculations using density functional theory were used to reduce the number of unknowns in the model with respect to EFG orientation. This made it possible to determine with reasonable precision the total jump rate of Cd among Ga(2) sites that correspond to a change in mirror plane orientation of site-symmetry. This total jump rate was found to be thermally activated with an activation enthalpy of 1.8 ±0.1 eV.     

Ab initio study of the EFG tensor at Cd impurities in Sc2O3 semiconductor

We present an ab initio study of diluted Cd impurities localized at both cation sites of the semiconductor Sc₂O₃. The electric-field-gradient (EFG) tensor at Cd impurities located at both cationic sites of the host structure was determined from the calculation of the electronic structure of the doped system. Calculations were performed with the full-potential augmented-plane wave plus local orbitals (APW+lo) method within the framework of the density functional theory. We studied the atomic structural relaxations and the perturbation of the electronic charge density induced by the impurities in the host system in a fully self-consistent way. We showed that the Cd impurity introduces an increase of 8% in the nearest oxygen neighbors bond-lengths, changing the EFG sign for probes located at the asymmetric cation site. The APW+lo predictions for the charged state of the Cd impurity were compared with EFG results existent in the literature, coming from time-differential γ–γ perturbed-angular-correlations experiments performed on ¹¹¹Cd-implanted Sc₂O₃ powder samples. From the excellent agreement between theory and experiment, we can strongly suggest that the Cd acceptor impurities are ionized at room temperature. Finally, we showed that simple calculations like those performed within the point-charge model with antishielding factors do not correctly describe the problem of a Cd impurity in Sc₂O₃.     

Electric-Field Gradients at Group-III Sites on GaAs and InAs (111)B Surfaces

We report a comparison of electric-field gradients (EFGs) measured at the group-III sites on epitaxially-grown surfaces of 2×2-reconstructed GaAs and InAs crystals. For this purpose, we used ¹¹¹In→¹¹¹Cd perturbed-angular-correlation (PAC) spectroscopy. Sharp spectral lines characterize the perturbation functions corresponding to both surfaces. On GaAs surface, we observe only one well-defined nuclear electric-quadrupole interaction (NQI); and on the InAs surface, we observe a primary and a secondary NQI. Very similar but experimentally-distinguishable values of the EFG-parameters characterize the primary interactions corresponding to the GaAs and InAs surfaces. Specifically, for the GaAs and InAs surfaces, ω _Q =28.0±0.2 Mrad s⁻¹ and η=0.43±0.02 and ω _Q =28.8±0.2 Mrad s⁻¹ and η=0.39±0.02, and the angles between EFG z-axis and the (111) direction are 65°±3° and β=53°±3°, respectively. These unexpected results indicate that the so-called lattice contribution to the EFG is not significant. Moreover, for the primary NQIs on both surfaces, the similar parameter values demonstrate that chemical differences between the ¹¹¹In probe and the indigenous Ga surface atoms cause no large quantitative effects. This information indicates that impurity probes and PAC spectroscopy can be used effectively to investigate III–V surfaces. This revised version was published online in September 2006 with corrections to the Cover Date.     

Hyperfine interaction of111Cd in antiferromagnetic cobalt oxide

The temperature dependence of the hyperfine field of substitutional¹¹¹Cd in antiferromagnetic CoO has been measured by means of the perturbed angular correlation technique. The Larmor frequency ω_L is found to obey a power law ω_L(t=ω₀ t ^β) up tot _max=0.4 wheret=1−T/T _N is the reduced temperature withT _N=291.2(3) K and β=0.393 (5) the critical exponent. The results are discussed and compared with PAC experiments on¹¹¹Cd in NiO and Ni and with results obtained by other methods.     

Measurements of the electric field gradient at cadmium in the high Tc superconductor YBa2Cu3O6+x

The electric field gradient (EFG) at¹¹¹Cd probe atoms in YBa₂Cu₃O_6+x has been studied by the perturbed angular correlation (PAC) spectroscopy. After annealing at temperatures below 1000 K the probe atoms are located at the Cu(1) site; above 1100 K they preferentially occupy the Y site, whereas in the intermediate temperature range they also reside on the Ba site. A reduction of the oxygen content from x=1.0 to 0.2 resulted in a decrease of the asymmetry parameter measured at the Ba site, but in an increase of it at the Y site, indicating there a local distortion of the YBa₂Cu₃O_6+x lattice by the Cd impurity. Two different surroundings for the Cd atoms at the Cu(1) site were observed.     

The electric quadrupole interaction of 111Cd in ZrZn2 and Zn in the samples prepared at 8 GPa

The perturbed angular correlation (PAC) measurements with the ¹¹¹In-¹¹¹Cd nuclear probe embedded into the lattice of the cubic (C15) Laves compound ZrZn₂ showed that ¹¹¹Cd nuclei experienced an axially symmetric electric quadrupole interaction with a frequency ν _Q  = 132.4 MHz at room temperature. The samples were synthesized and doped with the probe at a pressure 8 GPa. The temperature dependence of ν _Q was shown to be linear: ν _Q (T) = 147(1 − 0.033 T) MHz. Since the value of ν _Q is very close to that known for ¹¹¹Cd in the lattice of Zn, we have checked if it could be assigned to residual Zn metal in the sample. For the Zn sample melted and doped with ¹¹¹In at 8 GPa we have obtained ν _Q  = 117.3 MHz at 300 K and 127 MHz at 80 K – both values considerably lower than that for ¹¹¹In doped Zn samples prepared at an ambient pressure. These data, and the fact that ν _Q (T) in Zn is known to follow the T ^3/2 law, allow to attribute the ν _Q value quoted above to ¹¹¹Cd nuclei at the substitutional sites with tetrahedral symmetry in the Zn sublattice of ZrZn₂.     

The CoO/Co3O4 phase transition studied by PAC

The hyperfine environment of¹¹¹Cd nuclei formed in the radioactive decay of¹¹¹In ions implanted into CoO was studied via the PAC method. The quadrupole coupling constants measured in isochronal and isothermal annealing treatments at various oxygen pressures were related to the initial stages of the CoO→Co₃O₄ phase transition and interpreted as the successive trapping of cation vacancies at the¹¹¹In probe. The phase transition was confirmed by X-ray diffraction, RBS and a PAC measurement on¹¹¹Cd in spinel type Co₃O₄.     

Electric quadrupole interaction at 111Cd and 119Sn in isostructural NiIn and CoSn compounds

The perturbed angular correlation technique and Mössbauer spectroscopy were applied to study the electric field gradient on ¹¹¹Cd and ¹¹⁹Sn probe atoms in isostructural NiIn and CoSn compounds. The ¹¹¹Cd PAC measurements performed in the temperature range 80--1100 K demonstrated the existence of two axially symmetric EFG's in each of the investigated compounds, related to the 2(d) and 1(a) probe sites in the B35 structure. A 1(a)-site preference for Cd probes in CoSn compound was observed. The temperature dependence of the quadrupole frequencies for ¹¹¹Cd in both compounds, interpreted in terms of the empirical model proposed by Christiansen et al.[1], follows a T^3/2 relation with different slope parameters for each of the observed frequencies. These results are combined with the data from the Mössbauer experiment. The ¹¹⁹Sn Mössbauer spectra taken at liquid nitrogen and at room temperatures showed two quadrupole split doublets with the intensity ratio 2:1 for CoSn and 8:1 for NiIn_0.99Sn_0.01sample, giving an evidence of 2(d)-site preference for tin atoms in NiIn. The EFG values measured on ¹¹⁹Sn are 2.5 to 4 times larger than those on ¹¹¹Cd nuclei, while the ratio of the respective Sternheimer antishielding factors is equal to 0.77. Within the limits of errors no differences were observed in the magnitude and temperature dependence of Debye--Waller factors for 2(d) and 1(a) ¹¹⁹Sn positions in CoSn and NiIn lattices.     

An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices

The role of indium in GaN and AlN films is investigated with the method of the perturbed angular correlation (PAC). Using the PAC probe ¹¹¹In in addition to indium on substitutional cation sites a large fraction of probes is found in a distinctly different microscopic environment which was attributed to the formation of an indium nitrogen-vacancy (V_N) complex. The influence of an electron capture induced after effect is ruled out by additional measurements with the PAC probes ^111mCd and ¹¹⁷Cd and using GaN with different dopants. It is shown that the V_N is not bound to substitutional Cd impurities suggesting that the In-V_N complex formation is a particularity of In in GaN and AlN. Finally, a preliminary model is presented to explain the temperature behavior of the electric field gradient, observed in the In-V_N complex measured with ¹¹¹In.     

The EFG of the In-O-Bond In2O3, AgO and Ag2O

PAC measurements on¹¹¹In in In₂O₃, AgO and Ag₂O were performed to study the influence of different oxygen coordinations to the EFG.¹¹¹In was implanted at 500keV; in addition, AgO and Ag₂O were irradiated in the cyclotron to produce¹¹¹In via the (α, 2n) reaction. Using the point charge model and the known lattice structure of the oxides, the antishielding factor was calculated; it shows a strong dependence on the In-O bondlength.