III-V compound semiconductor (001) surfaces

There has been renewed interest in the structure of III-V compound semiconductor (001) surfaces caused by recent experimental and theoretical findings, which indicate that geometries different from the seemingly well-established dimer models describe the surface ground state for specific preparation conditions. I review briefly the structure information available on the (001) surfaces of GaP, InP, GaAs and InAs. These data are complemented with first-principles total-energy calculations. The calculated surface phase diagrams are used to explain the experimental data and reveal that the stability of specific surface structures depends largely on the relative size of the surface constituents. Several structural models for the Ga-rich GaAs (001)(4×6) surface are discussed, but dismissed on energetic grounds. I discuss in some detail the electronic properties of the recently proposed cation-rich GaAs (001)ζ(4×2) geometry. Received: 18 May 2001 / Revised version: 23 July 2001 / Published online: 3 April 2002     

Comparison of fractal analyses methods and fractal dimension for pre-treated stainless steel surfaces and the correlation to adhesive joint strength

The fractal dimensions of six differently mechanically pre-treated stainless steel samples were investigated using five fractal algorithms. The surfaces were analyzed using a profiler, atomic force microscopy (AFM), scanning electron microscopy (SEM) and light microscopy (LM), and thereafter adhesively bonded and tested in single-overlap joints to test their tensile strength. All samples showed different fractal behavior, depending on the microscopic methods and fractal algorithms. However, the overall relation between fractal dimension and tensile strength is qualitatively the same, except for the SEM images. This verifies that tensile strength is correlated to fractal dimension, although only within the length-scale of the profiler and the light microscope (≈0.5–100 μm). The AFM method was excluded in this comparison, since the limitation in the z-direction for the AFM scanner made it difficult to scan the rougher parts of the blasted samples. The magnitude of the surfaces is a parameter not often considered in fractal analysis. It is shown that the magnitude, for the Fourier method, is correlated to the arithmetic average difference, R_a, but only weakly to the fractal dimension. Hence, traditional parameters, such as R_a, tell us very little about the spatial distribution of the elevation data. Received: 22 December 1999 / Accepted: 9 October 2000 / Published online: 9 February 2001     

Structure and dynamics of clean and adsorbate-covered crystal surfaces studied by surface X-ray diffraction

Received: 24 March 1998/Accepted: 21 August 1998     

(4×2) and (2×4) reconstructions of GaAs and InP(001) surfaces

Received: 21 March 1997/Accepted: 12 August 1997     

Microscopic structure and structuring of perovskite surfaces and interfaces: SrTiO3, RBa2Cu3O7-δ

3 surfaces and bicrystal interfaces and the growth of YBa₂Cu₃O_7-δ thin films on such substrates using scanning tunneling microscopy and X-ray diffraction. Proper annealing of SrTiO₃ in oxygen and/or ultrahigh vacuum produces uniformly terminated, atomically flat and well-ordered surfaces. For vicinal SrTiO₃(001) surfaces the particular annealing sequence and miscut angle sensitively determines the resulting step structure and thus the microscopic surface morphology. Steps of SrTiO₃(001) surfaces can be adjusted to a height of one, two, or multiple times the unit-cell height (a_STO=0.3905 nm). The growth of YBa₂Cu₃O_7-δ films on these substrates by pulsed laser deposition was traced from the initial nucleation to a thickness of about 300 nm. The morphology, texture, and defect structure of the films is determined by the specific structure and morphology of the pristine substrate. Anisotropic, planar defects, originating from substrate step edges, strongly modify the electronic transport properties of the film leading to critical currents up to ≈9×10⁷ A/cm² at 4 K as well as pronounced transport anisotropies. Surfaces and interface energy terms are discussed, which also determine the observed structure of bicrystal boundaries. Received: 16 April 1998/Accepted: 21 August 1998     

Preparation of P-rich InP surfaces via MOCVD and surface characterization in UHV

For the first time direct contamination-free transfer to UHV was achieved for the P-rich InP(100) surface that is the easiest to prepare and control in the MOCVD environment. To avoid contamination during transfer a commercial MOCVD apparatus was modified to allow for transfer of samples to the 10^-9 mbar UHV range within a very short time (less than 20 s) [1]. Epitaxial InP(100) films were prepared with TBP (tertiarybutylphosphine) and TMIn (trimethylindium) as precursors. In situ reflectance anisotropy spectroscopy (RAS) was carried out in the MOCVD environment. After transfer of the sample to UHV the same RAS spectrum was recovered. Auger-electron spectra (AES) confirmed the P-termination of the surface reconstructions suggested by RAS. Received: 19 October 1998 / Accepted: 21 April 1999 / Published online: 14 July 1999     

Combined electric field and near-field scanning optical microscopy: modification of silicon surfaces

Received: 3 July 1998     

Lateral manipulation of adatoms and native substrate atoms with the low-temperature scanning tunneling microscope

Received: 27 March 1998     

IR absorption enhancement for physisorbed methanol on Ag island films deposited on the oxidized and H-terminated Si(111) surfaces: effect of the metal surface morphology

Infrared absorption measurements using a multiple internal reflection geometry are reported for condensed methanol at 90 K on Ag island films deposited on the oxidized and hydrogen-terminated surfaces of Si(111). The attenuated total reflection (ATR) spectra obtained as a function of methanol exposure (up to 14 L) show that a 1-nm mass thickness of Ag island film on the oxidized Si(111) surface yields an absorption intensity 2–3 times larger than the intensity in the absence of Ag on the oxidized surface. Deposition of the same thickness of Ag on the hydrogen-terminated Si(111) surface results in approximately twice the enhancement. The different magnitudes of the enhancement are discussed based on SEM micrographs for Ag island films formed on the oxidized and H-terminated Si(111) surfaces. Received: 1 March 1999 / Accepted: 8 March 1999 / Published online: 5 May 1999     

Precision laser ablation of dielectrics in the 10-fs regime

Received: 4 January 1999 / Accepted: 5 January 1999     

Micromachining of quartz with ultrashort laser pulses

Received: 6 January 1997/Accepted: 1 April 1997     

Amorphization and grain size effect on milled PbTiO3 studied by Raman scattering and visible photoluminescence emission

Raman scattering and photoluminescence (PL) studies on milled PbTiO₃ are presented in this paper. The results suggest that the visible PL emission could be related to both the localized states in the interface between the amorphous layer and the crystalline core and the amorphous layer itself. The Raman spectrum of PbTiO₃ milled for a long time showed the vibrational density of states, and a detailed analysis of the soft mode allowed us to conclude that the PbTiO₃ crystalline core did not experience any structural phasetransition. Received: 2 February 2001 / Accepted: 23 July 2001 / Published online: 17 October 2001     

Strain-driven self-organization of nanostructures on semiconductor surfaces

Received: 14 April 1998/Accepted: 23 October 1998     

Steps,facets and nanostructures: investigations of Cu (11n) surfaces

Step structure and dynamics and adsorbate-induced reconstruction of stepped surfaces are useful features for investigating fundamental surface phenomena and their practical consequences. In this respect, vicinal Cu (11n) surfaces with n=3, 5 and 9 were studied by scanning tunneling microscopy (STM) at 300 K. While the regular monoatomic steps fluctuate for Cu (119), they are apparently stabilized for n≤5 by their strong repulsive interaction and this leads to a very low kink activity. In addition to the regular steps, the formation of double steps was observed as a particular phenomenon on those surfaces. These double steps determine the dynamic behavior at room temperature. By applying existing models for the fluctuations of the step positions in space and time, the formation energy for kinks at these double steps was determined to be 0.16 eV for Cu (115). According to this evaluation, diffusion along step edges is the dominating mass-transport mechanism. A model for the structure of the double steps and for the atomic displacement processes necessary for kink migration at these steps is presented. Complete faceting is observed for these surfaces upon oxygen adsorption at elevated temperatures (around 500 K) and was studied in detail for n=5 and 9. Both surfaces reconstruct into two types of {104} facets and a third facet, the orientation of which is determined by the macroscopic crystal orientation. The facet size is governed by the formation kinetics and can be controlled by varying the crystal temperature or the oxygen partial pressure. The formation kinetics is discussed as a nucleation and growth process and the relevant parameters are given. Facets within a range of size between 5 nm and 100 nm could thus be produced. They remained stable at ambient atmosphere, up to about 620 K, and also if covered by additional metal layers such as Ni. Received: 1 June 2001 / Accepted: 23 July 2001 / Published online: 3 April 2002     

Fast imaging method combining cantilever and feedback signals in contact-mode atomic force microscopy

A fast imaging method in a contact-mode atomic force microscope (AFM) is examined for its principle and performance, where the image is acquired by combining a cantilever signal and a feedback signal applied to a piezotube. The frequency component of the feedback signal is restricted in the lower frequency region to keep the linear relationship between the feedback signal and the displacement of the piezotube. It is shown that the image is basically independent of the feedback details since a wide detection bandwidth is certified by the cantilever response much faster than by the feedback response, allowing a fast scanning. The fast scanning, however, enhances the distortion in the transient region where surface height changes abruptly. This influence can be reduced by choosing the scan line direction for the data acquisition. The combination procedure also reduces the low-frequency noise in the feedback signal. A 512×512-pixel image was obtained in 90 s without sacrificing the resolution. Received: 24 November 1998 / Accepted: 31 March 1999 / Published online: 2 June 1999     

True atomic resolution under ambient conditions obtained by atomic force microscopy in the contact mode

2 ) has been investigated by contact-mode atomic force microscopy (AFM) in air. Both the terraces and the monolayer step itself were reproducibly imaged at atomic resolution in the repulsive-force regime at forces between tip apex and sample of the order of 10^-9 N. Several kinks were also imaged at atomic resolution. Details of the atomic registry of subsequent Se-Nb-Se sandwich layers as well as the arrangement of the individual atoms at the kink sites were resolved. The results are in perfect quantitative agreement with the lattice structure known from X-ray analysis and indicate that true atom-by-atom lateral resolution of microscopic defects is feasible by AFM in the contact mode and under ambient conditions. Published online: 10 February 1999     

Fast sub-micrometer interference lithography on Silicon

Received: 4 February 1998/Revised version: 18 February 1998     

Structure of high-index GaAs surfaces – the discovery of the stable GaAs (2 5 11) surface

We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on recent progress in our own laboratory. By adapting a commercial scanning tunneling microscope (STM) to our molecular beam epitaxy and ultra high vacuum analysis chamber system, we have been able to atomically resolve the GaAs( )B (8 ×1), (114)Aα2(2×1), (137), (3 7 15), and (2 5 11) surface structures. In cooperation with P. Kratzer and M. Scheffler from the Theory Department of the Fritz-Haber Institute we determined the structure of some of these surfaces by comparing total-energy calculations and STM image simulations with the atomically resolved STM images. We present the results for the {112}, {113}, and {114} surfaces. Then we describe what led us to proceed into the inner parts of the stereographic triangle and to discover the hitherto unknown stable GaAs (2 5 11) surface. Received: 16 May 2001 / Accepted: 23 July 2001 / Published online: 3 April 2002     

Vibrational dynamics of fullerene molecules adsorbed on metal surfaces studied with synchrotron infrared radiation

Infrared (IR) spectroscopy of chemisorbed C₆₀ on Ag (111), Au (110) and Cu (100) reveals that a non-IR-active mode becomes active upon adsorption, and that its frequency shifts proportionally with the charge transferred from the metal to the molecule by about 5 cm^-1 per electron. The temperature dependence of the frequency and the width of this IR feature have also been followed for C₆₀/Cu (100) and were found to agree well with a weak anharmonic coupling (dephasing) to a low-frequency mode, which we suggest to be the frustrated translational mode of the adsorbed molecules. Additionally, the adsorption is accompanied by a broadband reflectance change, which is interpreted as due to the scattering of conduction electrons of the metal surface by the adsorbate. The reflectance change allows determination of the friction coefficient of the C₆₀ molecules, which results in rather small values (∼2×10⁹ s^-1 for Ag and Au, and ∼1.6×10⁹ s^-1for Cu), consistent with a marked metallic character of the adsorbed molecules. Pre-dosing of alkali atoms onto the metal substrates drastically changes the IR spectra recorded during subsequent C₆₀ deposition: anti-absorption bands, as well as an increase of the broadband reflectance, occur and are interpreted as due to strong electron–phonon coupling with induced surface states. Received: 6 June 2001 / Accepted: 23 October 2001 / Published online: 3 April 2002