All-solid-state continuous-wave frequency doubling Nd:LuVO4/LBO laser with 9.6 W output power at 672 nm

An efficient and compact red laser at 672 nm is generated by intracavity frequency doubling of a continuous wave (CW) laser operation of a diode pumped Nd:LuVO₄ laser at 1344 nm under the condition of suppression the higher gain transition near 1064 nm. With 38 W diode pump power and a frequency doubling crystal LBO, as high as 9.6 W of CW output power at 672 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 25.3% and the output power stability in 8 h is better than 2.38%. To the best of our knowledge, this it the highest conversion efficiency of watt-level laser at 672 nm generated by intracavity frequency doubling of a diode pumped Nd:LuVO₄ laser at 1344 nm.     

All-solid-state continuous-wave frequency doubling Nd:YAG/LBO laser with 8.2 W output power at 660 nm

An efficient and compact red laser at 660 nm is generated by intracavity frequency doubling of continuous wave (CW) laser operation of a diode pumped Nd:YAG laser at 1319 nm under the condition of suppression the higher gain transition near 1064 and 1319 nm under the condition of suppression the higher gain transition near 1064 and 1338 nm. With 40 W diode pump power and a frequency doubling crystal LBO, as high as 8.6 W of CW output power at 660 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 21.5% and the output power stability in 8 h is better than 2.73%. To the best of our knowledge, this it the highest conversion efficiency of watt-level laser at 660 nm generated by intracavity frequency doubling of a diode end pumped Nd:YAG laser at 1319 nm.     

All-solid-state continuous-wave frequency doubling Nd:YLF/LBO laser with 2.15 W output power at 526 nm

An efficient and compact green laser at 526 nm generated by intracavity frequency doubling of a continuous wave (CW) laser operation of a diode pumped Nd:YLF laser at 1053 nm under the condition of suppression the high gain transition at 1047 nm. With 19.5 W diode pump power and a frequency doubling crystal LBO, as high as 2.15 W of CW output power at 526 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 11.2% and the output power stability in 8 h is better than 2.87%. To the best of our knowledge, this it the highest watt-level laser at 526 nm generated by intracavity frequency doubling of a diode pumped Nd:YLF laser at 1053 nm.     

All-solid-state continuous-wave frequency doubling Nd:LuVO4/LBO laser with 9.6 W output power at 458 nm

An efficient and compact red laser at 458 nm is generated by intracavity frequency doubling of a continuous wave (CW) laser operation of a diode pumped Nd:LuVO₄ laser at 916 nm under the condition of suppression the higher gain transition near 1064 nm. With 30 W diode pump power and a frequency doubling crystal LBO, as high as 9.6 W of CW output power at 458 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 32.0% and the output power stability in 8 hours is better than 2.35%. To the best of our knowledge, this it the highest conversion efficiency of watt-level laser at 458 nm generated by intracavity frequency doubling of a diode pumped Nd:LuVO₄ laser at 916 nm.     

All-solid-state 543 nm green laser generated by frequency doubling of a diode pumped Nd:YVO<Subscript>4</Subscript> laser at 1086 nm

An efficient and compact green laser at 543 nm is generated by intracavity frequency doubling of a continuous wave (CW) laser operation of a diode pumped Nd:YVO₄ laser at 1086 nm under the condition of suppression the higher gain transition near 1064 nm. With 10 W diode pump power and a frequency doubling crystal LBO, as high as 2.13 W of CW output power at 543 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 21.3% and the output power stability in 3 h is better than 2.27%.     

Highly efficient CW intracavity frequency-doubled Yb:YAG-LBO laser at 515 nm under 968 nm diode laser pumping

We describe the output performances of the 1030 nm transition in Yb:YAG under in-band pumping with diode laser at the 968 nm wavelength. An end-pumped Yb:YAG crystal yielded 1.93 W of continuous-wave (CW) output power for 9.1 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 23.6%. Furthermore, 205 mW 515 nm green light was acquired by frequency doubling, resulting in an optical-to-optical efficiency with respect to the absorbed pump power of 2.7%. Comparative results obtained for the pump with diode laser at 940 nm are given in order to prove the advantages of the in-band pumping.     

555 nm laser sources based on intracavity frequency doubling of Nd:YGG laser

We report for the first time a yellow-green laser at 555 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1110 nm Nd-doped yttrium gallium garnet (Nd:YGG) laser under in-band diode pumping at 808 nm. An LBO crystal, cut for critical type I phase matching is used for second harmonic generation of the laser. At an incident pump power of 18.5 W, as high as 2.31 W of CW output power at 555 nm is achieved. The optical-to-optical conversion efficiency is up to 12.4%, and the fluctuation of the yellow-green output power was better than 2.8% in the given 4 h.     

All-solid-state continuous-wave frequency doubling Nd:LuVO4/LBO laser with 2.17 W output power at 543 nm

Efficient and compact green-yellow laser output at 543 nm is generated by intracavity frequency doubling of a CW diode-pumped Nd:LuVO₄ laser at 1086 nm under the condition of suppressing the higher gain transition near 1064 nm. With 16 W of diode pump power and the frequency-doubling crystal LBO, as high as 2.17 W of CW output power at 543 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 13.6% and the output power stability over 8 hours is better than 2.86%. To the best of our knowledge, this is the highest watt-level laser at 543 nm generated by intracavity frequency doubling of a diode pumped Nd:LuVO₄ laser at 1086 nm.     

Continuous wave Nd:YAG-BiBO blue laser under direct 869 nm pumping

We report a blue laser at 473 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 946 nm Nd:YAG laser under in-band diode pumping at 869 nm. An BiBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 8.6 W, as high as 721 mW of CW output power at 473 nm is achieved. The optical-to-optical conversion efficiency is up to 8.4%, and the fluctuation of the blue output power was better than 3.5% in the given 30 min.     

Laser diode and pumped Cr:Yag passively Q-switched yellow-green laser at 543 nm

Efficient and compact yellow green pulsed laser output at 543 nm is generated by frequency doubling of a passively Q-switched end diode-pumped Nd:YVO₄ laser at 1086 nm under the condition of sup-pressing the higher gain transition near 1064 nm. With 15 W of diode pump power and the frequency doubling crystal LBO, as high as 1.58 W output power at 543 nm is achieved. The optical to optical conversion efficiency from the corresponding Q-switched fundamental output to the yellow green output is 49%. The peak power of the Q-switched yellow green pulse laser is up to 30 kW with 5 ns pulse duration. The output power stability over 8 hours is better than 2.56% at the maximum output power. To the best of our knowledge, this is the highest watt-level laser at 543 nm generated by frequency doubling of a passively Q-switched end diode pumped Nd:YVO₄ laser at 1086 nm.     

高效腔外频率变换紫外激光器

 为了得到高效的腔外频率变换355 nm紫外激光输出,提出了一种利用３块LBO作为非线性频率变换晶体的新方案。采用LD端面泵浦Nd：YAG声光Q开关激光器作为基波源,当入射泵浦功率为25 W、调制频率12 kHz时,获得了6.2 W的1 064 nm激光输出,经过非线性频率变换后,获得了2.7 W的紫外355 nm激光输出,光-光转换率43.4%。     

Continuous-wave intracavity frequency-doubled Nd:Yag-KTiOPO<Subscript>4</Subscript> red laser

Efficient and compact red laser output at 669 nm is generated by intracavity frequency doubling of a continuous-wave (CW) diode-pumped Nd:YAG laser at 1338 nm. With 16.9 W of diode pump power and the frequency-doubling crystal KTiOPO₄ (KTP), a maximum output power of 582 mW in the red spectral range at 669 nm has been achieved, corresponding to an optical-to-optical conversion efficiency of 3.4%; the output power stability over 4 h is better than 3.6%. To the best of our knowledge, this is first work on intracavity frequency doubling of a diode pumped Nd:YAG laser at 669 nm.     

Efficient Nd:YVO_4 laser in-band pumped by wavelength-locked 913.9-nm laser diode and Q-switch operation

An efficient 1064-nm Nd:YVO_4laser in-band pumped by a wavelength-locked laser diode(LD) at 913.9 nm was demonstrated. The maximum continuous wave(CW) output power of 23.4 W at 1064 nm was realized with the incident pump power of 40 W, corresponding to a total optical-to-optical efficiency of 58.5%. This is to the best of our knowledge the highest total optical-to-optical efficiency and output power of Nd:YVO_4laser in-band pumped by a 913.9-nm laser diode.The Q-switched operation of this laser was also investigated. Through a contrast experiment of pumping at 808 nm, the experimental results showed that an Nd:YVO_4laser in-band pumped by a wavelength-locked LD at 913.9 nm had excellent pulse stability and beam quality for high repetition rate Q-switching operation.     

An efficient continuous-wave YVO_4/Nd:YVO_4/YVO_4 self-Raman laser pumped by a wavelength-locked 878.9 nm laser diode

We report an efficient continuous-wave self-Raman laser at 1176 nm based on a 20-mm-long composite YVO_4/Nd:YVO_4/YVO_4 crystal and pumped by a wavelength-locked 878.9 nm diode laser.A maximum output power of 5.3 W is achieved at a pump power of 26 W,corresponding to an optical conversion efficiency of 20%and a slope efficiency of 21%.The Raman threshold for the diode pump power was only 0.92 W.The results reveal that in-band pumping by a wavelength-locked diode laser significantly enhances output power and efficiency of self-Raman lasers by virtue of improved pump absorption and relieved thermal loading.     

Diode-pumped Nd:LGS/LBO laser at 452 nm

We report a blue laser at 452 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 904 nm Nd:LGS laser under 808 nm diode pumping. A LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation (SHG) of the laser. At an incident pump power of 17.8 W, as high as 1.14 W of cw output power at 452 nm is achieved. The optical-to-optical conversion efficiency is up to 6.4%, and the fluctuation of the blue output power was better than 4.1% in the given 30 min.     

Highly efficient single-pass frequency doubling of a continuous-wave distributed feedback laser diode using a PPLN waveguide crystal at 488 nm

A continuous-wave distributed feedback diode laser emitting at 976 nm was frequency doubled by the use of a periodically poled lithium niobate waveguide crystal with a channel size of 3 microm x 5 microm and an interaction length of 10 mm. A laser to waveguide coupling efficiency of 75% could be achieved resulting in 304 mW of incident infrared light inside the waveguide. Blue laser light emission of 159 mW at 488 nm has been generated, which equals to a conversion efficiency of 52%. The resulting wall plug efficiency was 7.4%.     

Room temperature diode-pumped Tm,Ho:YAP laser with double etalons

A diode end-pumped single-frequency Tm,Ho:YAP laser at room temperature was reported. We obtain a single frequency Tm,Ho:YAP laser of up to 31 mW with Fabry-Perot etalons in the cavity at 2130.8 nm. The optical conversion efficiency is 1.0% and the slope efficiency is 6.3%. The measured full width at half maximum (FWHM) is approximately 65 pm. The single-longitudinal-mode (SLM) laser can be used as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

Q-switch operation of a c-cut 2132-nm Tm, Ho:YAP laser pumped by a laser diode of 794.3 nm

Q-switch operation of a c-cut Tm (5 at %), Ho (0.3 at %):YAP laser at 2132 nm wavelength were reported in this paper. In the temperature of 77 K, the Tm, Ho:YAP crystal was double end-pumped by a 21.4-W fiber-coupled laser diode (LD) at the center wavelength of 794.3 nm. A 5.29-W Q-switch output power was acquired at pulse repetition frequency (PRF) of 10 kHz, corresponding to an optical-optical conversion efficiency of 24.7% and a slope efficiency of 28.1%. The energy per pulse of 3.57 mJ in 38 ns was achieved at 1.25 kHz with the peak power of 93.9 kW.     

激光线宽对单次通过PPMgO:LN晶体倍频效率的影响

通过单次穿过PPMgO:LN晶体产生了2.06 W的780 nm可调谐的连续倍频光. 采用1560 nm的分布反馈式(DFB)半导体激光器、光栅外腔半导体激光器(ECDL)和分布反馈式掺铒光纤激光器(DFB-EDFL)分别作为掺铒光纤放大器(EDFA)的注入光源, 所用的EDFA具有保持窄线宽的功能, 因此可以忽略它对基波线宽的展宽. 研究了激光线宽对单次通过PPMgO:LN 晶体的倍频效率的影响. 控制三台激光器各自注入EDFA的功率一致, 同时也保持EDFA 的输出功率. 在基波功率为12.42 W 时, 使用DFB半导体激光器注入EDFA时得到了1.36 W的780 nm倍频光输出, 转换效率为11.0%; 使用ECDL作为种子源时得到了1.78 W 的780 nm倍频光输出, 转换效率为14.3%; 使用DFB-EDFL作为种子源时得到了2.06 W的780 nm倍频光输出, 转换效率为16.6%. 测得三台种子激光器的线宽分别为1.2 MHz (DFB), 200 kHz (ECDL)和600 Hz (DFB-EDFL). 线宽越窄, 倍频效率越高, 实验结果与理论分析一致.     

Quasi-monolithic ring resonator for efficient frequency doubling of an external cavity diode laser

A quasi-monolithic second-harmonic-generation ring resonator assembled with miniaturized components is presented. The ring contains a 10-mm-long bulk periodically poled lithium niobate crystal for second-harmonic generation, four plane mirrors and two gradient-index lenses. All parts are mounted on a glass substrate with an overall size of 19.5 mm×8.5 mm×4 mm. As pump source a broad-area laser diode operated in an external resonator with Littrow arrangement is utilized. This external cavity diode laser provides near diffraction limited, narrow-bandwidth emission with an optical output power of 450 mW at a wavelength of 976 nm. Locking of the diode laser emission to the resonance frequency of the ring cavity was achieved by an optical self-injection locking technique. With this setup more than 126 mW of diffraction-limited blue light at 488 nm could be generated. The opto–optical conversion efficiency was 28% and a wall plug efficiency better than 5.5% could be achieved.