Transport of light radiation in a spatially finite three-dimensional scattering medium

We propose a new method for solving radiation transport problems, which permits including in analytic form for the case of normal incidence the effect of spatial finiteness of the scattering medium. The formation of the light field accompanying changes in the optical parameters and optical dimensions of the medium is analyzed.this paper, we examine the simplest case of a geometry of a scattering medium in the form of a parallelipiped with optical length _x, height _y, and width _z. The analysis is performed for the case =1, _y = _z with the latter varying in the range 0.1 to . The results obtained show that the light field depends strongly on the optical dimensions of the medium. The limiting values of the optical dimensions (_y = _z), beginning with which the spatial finiteness of the medium can be neglected, are determined.Translated from Izvestiya Vysshikh Uchebnykh Zavednii, Fizika, No. 8, pp. 82–85, August, 1982.     

Macroscopic short-time electrodynamics for conductors

In the macroscopic electrodynamics (MED) of good conductors (metals) based on Ohm's law j=E, the momentum relaxation time =m/ne² of the electrons limits the application to electromagnetic (EM) processes with characteristic timest. An interesting physical difficulty occurs in MED since the EM field damping time _R=/ of metals is very small compared with the minimum macroscopic time scale, _R. Consequently, the damping and propagation of EM waves and pulses in good conductors cannot be correctly described within the frame of conventional MED. New hyperbolic EM wave equations with relaxation and memory are proposed, which no longer exhibit the _R deficiency. The latter is caused by Ohm's law, which breaks down for short-time processes, due to neglect of electron inertia. The advantages of the proposed and the disadvantages of the conventional EM wave equations for good conductors are discussed in applications.     

Magnetoresistance in two-dimensional magnesium films of various thicknesses

The magnetoresistance of thin magnesium films in the weakly localized regime has been measured at 4.2 K as a function of film thickness. The results are analysed in a new and simple way based on the theory of Hikami et al. [1]. We use only two adjustable parameters, the inelastic relaxation time _i and the spin-orbit scattering time _so. Whereas _so is found to be almost independent of thickness, _i changes significantly. The variation of _i with thickness is discussed in the light of the theories for the enhanced electron-electron interaction, but it does not seem to tie up with any of the existing theories.     

The paramagnetic state (μ+e−) in silicon and tellurium at high temperature

The paramagnetic state (⁺e^–) in Si and Te was observed in a longitudinal magnetic field. The mean lifetimes of these states were obtained: _Si = 1.45(3) s, _Te = 12.5(8) s at 290 K, _Te = 12(2) s at 250 K.     

How to measure the magnetic moment of the tau lepton

We present a method for obtaining bounds on the magnetic moment of the lepton. In order to do this, we study the radiative decayW as a function of the anomalous magnetic moment of the ,a . One can obtain bounds as good asa < 4.05×10^–2, 2.25×10^–2, 4.5×10^–3, and 2.5×10^–3 at the present Fermilab, future Fermilab, SSC, and LHC, respectively.     

Microscopic theory of gas-surface interaction

A kinetic theory for inelastic scattering, trapping and desorption of gas molecules by surfaces is described. The theory is valid if the time scale _l = 1/r introduced by the relaxation ratesr in the kinetic equations (which is of the order of the life time of vibrational states of adsorbates) is sufficiently large compared to the vibrational period ₀. For sufficiently large activation energies of the adsorbates another time constant _res, the residence time of adsorbed particles, can be determined from the theory. One thus may distinguish four different partly overlapping regimes defined by the time scalest _{I l} , ₀t_II, _l t_III and _rest_IV. Regime I is governed by the Schrödinger equation regime II by the kinetic equations. In the region where both regimes overlap the kinetic coefficients can be expressed in terms of microscopic quantities which have been calculated previously. The relevant quantities in the other regimes are introduced and discussed from a unified point of view thus providing a link between the regimes I and IV which have been treated in detail before.     

A frequency response model in multiquantum well lasers with unequilibrium carrier transport

A carrier transport model to explain the high-frequency response in high-speed MQW lasers is described. The ambipolar approximation, which is unsuitable for dealing with the high-speed carrier dynamics in MQW structures, was not adopted for small-signal analysis. The carrier transport effect can be characterized by four time constants: the electron transport time, _bmn; the hole transport time, _bmp; the electron escape time, _wbn; and the hole escape time, _wbp. The frequency response was interpreted as the sum of the constant response term due to the fast electron current and the roll-off term due to the slow hole transport time. The ratio of the electron contribution to the total response was proportional to the ratio of electron contribution to the total differential gain, , and reciprocally proportional to _n0 = 1 + _bmn/_wbn. The value of was calculated to be about 0.5 for typical MQW lasers. The roll-off frequency is mainly determined by . The ratio _p0 = 1 + _bmp/_wbp affects the resonant frequency and the damping rate in the high-bias condition.     

Enhancement of conductance fluctuations in two-dimensional mesoscopic electron systems with valley structures

Conductance fluctuations are studied in twodimensional mesoscopic electron system with a two-hold valley degeneracy (n _v =2), which corresponds to the inversion layer of Si-MOSFET formed in (1,0,0) plane. It is shown that the intervalley scattering modifies conductance fluctuations depending on the ratio, Min { _c , _T }/ _v , where _v = ( – 2)/2 and _c , _T , and are, respectively, system traversal time, thermal diffusion time, intervalley scattering time and total life time of electrons. Conductance fluctuations are no longer universal and vary from G _univ 0.862·e ²/h to {ie223-5} at low temperatures even for isotropic systems. The conductance fluctuations increase with decreasing system size, increasing electron density and increasing intervalley scattering time. The effect of intervalley scattering is essentially the same as that of intersubband scattering as previously reported. At finite temperatures where _{T c} , the intervalley scattering modifies the fluctuations through the change in the energy correlation range to results in the reduction of the conductance fluctuations. In Si-MOSFET formed in (1, 1, 1) plane, wheren _v =6, more enhanced fluctuations are expected. Experimental studies are desired on theoretically predicted points.     

Dispersion of the permittivity of high-resistance semiconductors

We consider the mechanism of macroscopic polarization of semiconducting plates owing to the interaction of free carriers with an impurity level, in which role the level of the residual impurity of compensated semiconductors may appear. This mechanism, in combination with the diffusion-drift mechanism of polarization, results in additional dispersion of the real () and imaginary () parts of the dielectric permittivity, this being particularly significant for semiconductors of thickness smaller than the screening length L_s of free carriers. The character of the behavior of and depends on the relation between the Maxwell relation time _M and the times of carrier capture: _c and ejection _e by an impurity center. For _cetm and (/L_s) _e/_c1 the dispersion of and is the same as for thick plates (/L_s1). For _{c m e} and (/L_s)_e/_c1 the () curve has a characteristic kink in the region 1/_e, indicating additional absorption associated with the ejection of carriers into the surface region.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 11–13, October, 1981.     

Recombination of nonequilibrium current carriers in n-InAs1−x−ySbxPy

The stationary photoconductivity, the photomagnetic effect, and the relaxation kinetics of photoconductivity in n-InAs_1–x–ySb_xP_y crystals (x=0.06, y=0.11) with n₀ = 8·10¹⁵ and 3·10¹⁶ cm^–3 were measured and the lifetimes of nonequilibrium current carriers in the temperature interval T=78–295 K were determined. The possible mechanisms of recombination, which limit the lifetimes (radiative _R, Auger recombination _A, and recombination through centers with E_f=0.13 eV), which, as is demonstrated, are determined by interband recombination processes with _RA = _RA/(_R + _A), are calculated theoretically. The contribution of the 0.13 eV recombination centers can be significant when n₀10¹⁴ cm^–3.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 52–54, April, 1991.     

Influence of surface roughness on adsorbate mobility

Field-emission fluctuations of the coadsorption system W(112)Ni-K were investigated by the cross-correlation technique in two perpendicular crystallographic directions at various temperatures. In- and cross-channel movements show a considerable reduction of _max which is the time delay corresponding to the cross-correlation function maximum with increasing Ni coverage at a constant potassium probe concentration. _max, its activation energy and the signal velocity are discussed in terms of the well-known W(112)Ni surface structure.     

Surface tension,step free energy,and facets in the equilibrium crystal

Some aspects of the microscopic theory of interfaces in classical lattice systems are developed. The problem of the appearance of facets in the (Wulff) equilibrium crystal shape is discussed, together with its relation to the discontinuities of the derivatives of the surface tension (n) (with respect to the components of the surface normaln) and the role of the step free energy ^step(m) (associated with a step orthogonal tom on a rigid interface). Among the results are, in the case of the Ising model at low enough temperatures, the existence of ^step(m) in the thermodynamic limit, the expression of this quantity by means of a convergent cluster expansion, and the fact that 2^step(m) is equal to the value of the jump of the derivative / (when varies) at the point =0 [withn=(m ₁ sin ,m ₂ sin , cos )]. Finally, using this fact, it is shown that the facet shape is determined by the function ^step(m).     

Field screening in insulating crystals: The quasistatic case

A study is made of a metal-dielectric-semiconductor-dielectric-metal structure subjected to a linearly increasing external voltage. On the assumption of quasistatic screening conditions, the carrier-density and field distribution in the near-anode and nearcathode regions of the semiconductor are determined. This distribution proves to be nonuniform not only in the region of the surface space charge induced by the external field, but also within the interior of the semiconductor to a depth E₀·t_M/₀, where is the lifetime and the mobility of the carriers, E₀/₀ is the rise rate of the external field, and t_M is the Maxwellian relaxation time. The character of the distribution for opposite faces of the semiconductor is different, since in the near-cathode region for n-type semiconductors allowance must be made for the effect of the uncompensated space charge of the current carriers on the conductivity.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 7–10, February, 1973.We are indebted to G. M. Guro and V. B. Sandomirskii for a discussion of the work.     

On the Form of Parametrized Gravitation in Flat Spacetime

In a framework describing manifestly covariant relativistic evolution using a scalar time , consistency demands that -dependent fields be used. In recent work by the authors, general features of a classical parametrized theory of gravitation, paralleling general relativity where possible, were outlined. The existence of a preferred time coordinate changes the theory significantly. In particular, the Hamiltonian constraint for is removed From the Euler-Lagrange equations. Instead of the 5-dimensional stress-energy tensor, a tensor comprised of 4-momentum density mid flux density only serves as the source. Building on that foundation, in this paper we develop a linear approximate theory of parametrized gravitation in the spirit of the flat spacetime approach to general relativity. Using a modified form of Kraichnan's flat spacetime derivation of general relativity, we extend the linear theory to a family of nonlinear theories in which the flat metric and the gravitational field coalesce into a single effective curved metric.     

Steady-State Spectroscopic and Fluorescence Lifetime Measurements of New Two-Photon Absorbing Fluorene Derivatives

Steady-state excitation anisotropy, lifetimes, and time-resolved emission spectra of new 2-photon absorbing fluorene derivatives were measured in aprotic solvents at room temperature. Excitation anisotropy spectra in viscous silicon oil allowed the determination of the spectral position of three electronic transitions S₀ S₁, S₀ S₂, S₀ S₃ (S_i, i = 1, 2, 3 are the singlet electronic states) and the angles ( 30°) between absorption S₀ S₁ and emission S₁ S₀ dipole moments for the first electronic transition. Solvate relaxation processes in the first excited state of the investigated fluorene molecules affect the lifetimes of these states, ₁, so that experimental values of ₁ do not correspond to those calculated by Strickler and Berg theory. The influence of the molecular concentration on the fluorescence quantum yields and ₁ have been investigated.     

An Equilibrium Lattice Model of Wetting on Rough Substrates

We consider a semi-infinite 3-dimensional Ising system with a rough wall to describe the effect of the roughness r of the substrate on wetting. We show that the difference of wall free energies (r)= _AW(r)– _BW(r) of the two phases behaves like (r)r(1), where r=1 characterizes a purely flat surface, confirming at low enough temperature and small roughness the validity of Wenzel's law, cos (r)r cos (1), which relates the contact angle of a sessile droplet to the roughness of the substrate     

Superheated ice

Ice single crystals are superheated by a pressure jump. Their optical homogeneity is examined by elastic light scattering in order to obtain information about the thermodynamic state in the bulk of the sample. The intensity of the scattered light after the pressure jump remains first unchanged. Only after a time lag a steep intensity increase is observed. The dependence of on the superheating, on sample size, on the position of the scattering volume in the sample, on crystal orientation, on the scattering angle and on the crystal quality is examined. depends only on superheating and crystal quality within experimental sensitivity. After a superheating of more than 5°C the optical appearance of ice is like opalescent glass. The observations are compatible with the assumption that the ice has been superheated with respect to the melt and that homogeneous nucleation occurs in the metastable state. The equilibrium curve iceI _h —water has been determined.     

Electron (muon) decay of a heavy lepton

Expressions are derived for the differential probability for the decay e(). The possibly nonzero mass of and the polarizations of both the decaying lepton and the charged lepton which is produced are all taken into account. A quantitative analysis is carried out for various masses of the neutrino and for various energies of the lepton emitted during the decay.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 97–100, June 1981.     

The adiabatic approximation for quantum spin systems with a spectral gap

Summary We estimate the accuracy of the adiabatic approximation in predicting the time evolution of local observables for an XY quantum magnet with a slowly variable external magnetic field. The system evolves according to the natural Hamiltonian dynamics and the spectral gap produced by the magnetic field is assumed to be large with respect to the term inducing quantum fluctutions. The proof is based on a finite order truncation of a time dependent cluster expansion in inverse powers of the time scale . In the analytic case, we show that the accuracy of this truncated expansion is of order for any >1. If the time dependent perturbation is suddenly switched on at time zero and switched off at time , the accuracy of the adiabatic approximation is proven to be of orderO( ^–1.     

Strengthening effect of short-range order esf ternary face-centered cubic substitutional solutions

The increase produced by short-range order in the resistance to the movement of dislocations _sro in ternary f. c. c. substitutional solid solutions was studied. A general expression for _sro was derived taking into account the correlation on the first three coordination spheres and the change in the entropy associated with the passage of dislocations. The expressions obtained were used for qualitative calculation of the concentration dependence of _sro for several ternary systems.