N+离子注入聚四氟乙烯表面改性研究

在剂量为1×1014-1×1017ions/cm2的范围内,在不同的温度条件下,用能量为160keV氮离子对PTFE表面进行注入处理,处理后的样品用可见(514.5nm)和傅里叶红外(1064nm)拉曼(Raman)光谱以及扫描电镜和x射线能谱仪进行检测.实验结果表明低剂量注入可以增强PTFE晶体结构的取向和有序性;中等剂量时溅射损失效应明显,表面粗糙度加大:高剂量注入时微观结构强烈地变化并生成CC双键,导致表面碳化.另外温度对表面改性效果有很大的影响.刻蚀率和表面的微观结构的变化随着温度的升高而增强.离子注入前,用喷射技术使样品覆盖一层150nm的金膜,薄膜的黏结性和硬度用划痕和透明胶带测试配合扫描电镜进行分析.分析结果表明,黏结性在注入剂量为10\{14\}ions/cm2时明显增强,这个结果与表面亲水性测量结果是一致的.但表面硬度只在温度为180℃时才得到了增强.     

离子束注入对聚四氟乙烯表面改性研究

在剂量为1×1014～1×1017 ions/cm2的范围内,用能量为160 keV氮离子对PTFE表面进行注入处理,处理后的样品用可见(514.5nm)和傅立叶红外(1064 nm)喇曼(Raman)光谱以及扫描电镜进行检测.结果表明低剂量注入可导致弱C-C键的断裂,中等剂量时溅射损失效应明显,高剂量注入时微观结构强烈地变化并生成C=C双键.     

Ce~(3+)注入对超晶格中硅纳米晶光致发光强度的影响

研究了铈离子注入和二次退火等因素对硅纳米晶(nc-Si)发光强度的影响.利用电子柬蒸发以及高温退火得到nc-Si/SiO2超晶格结构.随后将该结构样晶分别注入2.0×1014cm2和2.0×1015cm-2剂量的铈离子(Ce3+),再分别以不同温度对其进行二次退火,获得多种样品.通过对样品光敏发光光谱的分析发现,Ce3+注入后未经过二次退火的样品发光强度急剧下降.二次退火后的样品,随着退火温度的升高,样品的光致发光灶度逐渐增强,但当温度超过600℃时,发光强度反而下降,600℃为二次退火的最佳退火温度.注入适当剂量的Ce3+,其发光强度可以超过未注入时的发光强度,Ce3+的注入存在饱和剂量.研究表明,样品发光强度的变化受到铈离子注入剂量和注入后二次退火温度等因素的影响,并且存在着Ce3+到nc-Si的能量传递.     

He 离子注入引起的高纯钨硬化

完成了不同注量或温度下100 keV 的He 离子注入高纯钨的实验,并利用纳米压痕技术测量了材料的微观力学性能。所有注入样品的纳米硬度值都高于未注入样品的纳米硬度值。对于室温注入样品,随着注量的增加,样品抗弹性变形能力下降;当注量不高于5x1017 ions/cm2 时,钨的纳米硬度峰值随着注量的增加而增加;注量为1x1018 ions/cm2 的钨样品的纳米硬度峰值反而降低。高温注入样品的抗弹性变形能力优于室温注入样品的抗弹性变形能力;随着注入温度的增加,样品的平均纳米硬度值和弹性模量略有下降。分析讨论了He 注入钨硬化和抗弹性形变能力降低的可能原因。Tungsten has been selected as divertor materials in fusion reactors because of its high thermal conductivity,high melting point, low expansion coefficient and high threshold energy for sputtering etc. The paper presents the hardening behaviour of high pure tungsten by 100 keV He+ with different fluences from 5x1016 ions/cm2 to 1x1018ions/cm2 at room temperature, and with fluence of 1x1018 ions/cm2 at higher temperatures (400, 600 and 800 °C). The microscopic mechanical properties of these samples were investigated by nano-indentation technology. The results show that all of the implanted samples harden obviously. The reason for hardening may be that defects of interstitial dislocation loops or dense helium bubbles etc induced by helium implantation obstacle the movement of dislocation. The peak nanohardness of the samples increased with the fluences increasing when the fluence is not more than 5x1017 ions/cm2, while the nano-hardness value of the implanted sample with the fluence of 1x1018 ions/cm2 decreases and the nano-hardness changes little in the region of 50 nm to 200 nm from surface. For all the implanted samples with 1x1018 ions/cm2 at higher temperatures, their nano-hardness values are similar, but show a trend of decrease with increasing temperature.The reason may be the decrease of the defects’ density during implantation at higher temperatures. In addition, the capability of resisting deformation for the implanted tungsten reduces with increasing fluence and increases a little at higher temperatures.     

纯锆上离子注入钇和镧后的表面分析

用金属蒸汽真空弧源，以40kV加速电压对纯锆样品分别进行了10¹⁶—10¹⁷/cm²的钇、镧离子注入，注入温度约为130℃.然后对注入样品进行表面分析.x射线光电子能谱分析表明，注入的钇以Y₂O₃形式存在，镧以La₂O₃形式存在.俄歇电子能谱表明，纯锆基体表面的氧化膜厚度随着离子注入剂量的增加而增加，当离子注入剂量达到10¹⁷/cm²时，氧化膜的厚度达到了最大值.卢瑟福背散射显示镧层的厚度约为30nm，同时直接观察到当离子注入剂量为(La+Y)10¹⁷/cm²时，纯锆样品表面发生了严重的溅射. 关键词： 纯锆 钇和镧离子共注入 卢瑟福背散射 x射线光电子能谱     

Ti~+离子注入结合热退火法制备TiO_2纳米薄膜研究

利用金属蒸发真空多弧离子源(MEVVA源)注入机将Ti+离子注入到高纯石英玻璃衬底中,离子注入的加速电压为20 k V,注入剂量为1.5×1017和3×1017ions/cm2,将注入样品在氧气气氛下进行热退火处理,制备了TiO2纳米薄膜。采用光吸收谱、拉曼光谱、X射线光电子能谱、扫描电子显微镜和透射电子显微镜对注入样品进行了测试和表征,分析了TiO2薄膜的形成机理。在热退火过程中衬底中离子注入的Ti原子向外扩散到衬底表面被氧化形成了TiO2。TiO2的形成、晶粒尺寸和晶体结构依赖于热退火温度,而形成TiO2薄膜的厚度主要受离子注入剂量和热退火时间的影响。实验结果表明,该方法制备的TiO2纳米薄膜将有望应用于制备具有光催化、自清洁等特殊性能的自清洁玻璃。     

升温Ta+N双注入对硬质合金性能的影响

利用升温离子注入技术 ,在PSII装置中实现了N +Ta双注入对硬质合金的有效表面改性 ,注入剂量为8× 10 1 7ions·cm- 2 ,注入表面温度分别为 10 0℃和 40 0℃。用显微硬度计测定硬度 ,表明试样表面显微硬度均有提高 ,其中 40 0℃试样表面显微硬度提高最大 ,高达 2 0 0 %。用俄歇电子能谱分析元素的浓度剖面 ,发现把温度从 10 0℃提高到 40 0℃ ,其注入层深度显著增加。X射线衍射测出了注入层表面形成的WN、TaN析出相。升温双元离子注入取得升温单元离子注入改性同样的效果 ,并获得比单元注入更好的复合优化强化层     

Fe/Nb多层膜中离子辐照效应研究(英文)

〗采用磁控溅射技术在Si衬底上沉积Si/\[Fe(10 nm)/Nb(4 nm)/Fe(4 nm)/Nb(4 nm)\]2/ \[Fe(4 nm)/Nb(4 nm)\]4多层膜。 用2 MeV的 Xe离子在室温下辐照多层膜。采用俄歇深度剖析、X射线衍射和振动样品磁强计分析辐照引起的多层膜元素分布、 结构及磁性变化。AES深度剖析谱显示当辐照注量达到1.0×1014 ions/cm2时, 多层膜界面两侧元素开始混合; 当辐照注量达到2.0×1016ions/cm2时, 多层膜层状结构消失, Fe层与Nb层几乎完全混合。XRD谱显示, 当辐照注量达到1.0×1014ions/cm2时, Nb的衍射峰和Fe的各衍射峰的峰位相对于标准卡片向小角方向偏移, 这说明辐照引起Nb基和Fe基FeNb固溶体相的形成;当辐照注量大于1.0×1015 ions/cm2时, 辐照引起非晶相的出现。 VSM测试显示,多层膜的磁性随着结构的变化而变化。 在此实验基础上, 对离子辐照引起界面混合现象的机理进行了探讨。The behavior of the metallic multilayers of Si/\[Fe(10 nm)/Nb(4 nm)/Fe(4 nm)/ Nb(4 nm)\]2/\[Fe(4 nm)/Nb(4 nm)\]4 under 2 MeV Xe ion irradiation has been investigated by depth profile analysis of Auger electron spectroscopy,X ray diffraction and vibrating sample magnetometer. The obtained experimental results show that the inter mixing between Fe and Nb layers occurs in the 1.0×1014 ions/cm2 irradiated multilayer sample which results in the formation of Nb based and Fe based FeNb solid solution. For the samples irradiated to fluence larger than 1.0×1014 ions/cm2, amorphisation is observed, and moreover, the layered structure of the multilayer samples is broken up completely for the samples under 1.0×1016 or 2.0×1016 ions/cm2 irradiation. Vibrating sample magnetometer measurement also reveals that the magnetization of the samples changes with the evolution of the structure of multilayers. Possible mechanism of the modification in Fe/Nb multilayers induced by Xe ion irradiation is briefly discussed.     

Co+离子注入单晶TiO2铁磁性来源与微结构研究

在室温下,将能量为80 keV, 注量分别为1×1016和1×1017ions/cm2的Co+离子注入到10 mm×10 mm×0.5 mm的单晶TiO₂样品。在氮气保护下, Co+离子注量为1×1017 ions/cm2时样品在温度为900 ℃的条件下退火30 min。 利用超导量子干涉仪 （SQUID）测量样品磁性, 并应用X射线衍射（XRD）和扩展边X射线吸收精细结构谱（EXAFS）研究Co+离子注入后样品的微观结构。 样品磁性测量结果表明:Co+离子注入后的样品具有室温铁磁性, 并且其饱和磁化强度的大小与Co+离子注量及样品是否经退火处理有关。 EXAFS研究表明: Co元素在Co+离子注量为1×1017ions/cm2的样品中主要以团簇形式存在;样品经退火处理后, Co团簇消失, 并发现Co部分替代TiO₂单晶中的Ti。Co+离子注入后, 在样品中形成Co团簇与否受离子注量的影响。 阐述了样品微观结构与铁磁性来源之间的关系。 At room temperature, monocrystalline plates of rutile (TiO₂) were implanted with cobalt ions of an energy of 80 keV to fluences of 1×1016 and 1×1017 ions/cm2 respectively . The 1×1017 ions/cm2 Co implanted samples were annealed in nitrogen at 900 ℃ for 30 min. The magnetic properties of Co implanted samples were measured with a superconducting quantum interference device magnetometer (SQUID) at room temperature. Furthermore, the X ray diffraction (XRD) and Extended X ray Absorption Fine Structure (EXAFS) were applied to investigate the structural and compositional properties of Co implanted samples. The magnetic measurements of samples showed that the size of the saturation magnetization of the Co implanted samples were related to the fluence of ions, and the saturation magnetization of the sample after annealed decreased significantly. The EXAFS measurements showed the presence of cobalt metallic clusters in the sample implanted to ion fluence of 1×1017 ions/cm2. The Co metallic clusters disappeared in the sample after annealed, and resulted in the oxidized Co, which is presumed to substitute into the Ti site. The formation of Co clusters or not was determined by the ion fluence. The relation between ferromagnetic behavior and microscopic structure of the Co implanted samples is discussed.     

视线离子注入温度效应

离子束材料表面改性有着许多优点，不仅注入离子可以任意选取，且注入或添加元素时样品的温度不受限制。在离子注入过程中，温升效应主要来自于入射离子的能量传递，其作用对化合物的形成、增强混合和增强扩散有着显著效果，促进化合物形成和相析出，在材料表面强化处理方面有着独特的意义。     

用扫描隧道显微镜观察石墨被Au离子轰击后的表面损伤

用扫描隧道显微镜研究石墨被Au离子轰击后的表面损伤。实验结果表明:用低剂量(1×10¹²ion/cm²)530keV的Au⁺和4.5MeV的Au⁺⁺均匀轰击石墨。在石墨表面所产生的最显著的损伤是单个入射Au离子造成的小丘,小丘的横向平均线度约为1.8nm。从高分辨的扫描隧道显微镜图象可以看出,这种损伤往往伴有多种形式的3^1/2×3^1/2R 30°的超结构(R为石墨的晶格常数)     

The Formation of Helium Bubbles in Silicon Surface Layers via Plasma Immersion Ion Implantation

The surface layers of single-crystal silicon Si(001) substrates subjected to plasma-immersion implantation with 2- and 5-keV helium ions to a dose of 5 × 10¹⁷ cm^–2 were probed via grazing incidence small-angle X-ray scattering and transmission electron microscopy. A surface layer formed by helium ions was found to possess a multilayer structure, wherein the upper layer is amorphous silicon, being on top of a sublayer with helium bubbles and a sublayer with a disturbed crystal structure. The in-depth electron density distribution, as well as the concentration and pore-size distribution, were established. The average pore sizes of bubbles at the above implantation energies are 4 nm and 8 nm, respectively.     

Scanning force microscopy of ion-irradiated organic single crystals of benzoyl glycine

Single crystals of the amino acid benzoyl glycine (hippuric acid) are irradiated normal to the as-grown surface by highly charged Bi ions with a kinetic energy of 2.38 GeV and a fluence of 1×10¹⁰ ions/cm². The projectiles create circular craters with a mean diameter of 40 (10) nm on the surface of the crystal as observed by scanning force microscopy (SFM). The mean depth amounts to 4 (1) nm, this value being considered as a lower limit due to the finite radius of curvature of the force cantilever tip. Thus, on the average, each single-ion projectile seems to eject about 10⁴ molecules. On the surface of non-irradiated crystals, SFM reveals terraces of a few monolayers in height. In water, it was possible to visualize the lattice periodicity. Terraces were also observed on the irradiated crystal surface in the presence of the craters, indicating that the crystal is still intact at the given dose. Received: 25 May 2000 / Accepted: 26 May 2000 / Published online: 13 July 2000     

Fe+注入植物种子射程实验的Monte-Carlo仿真

研究表明,TRIM程序运算结果与实验测量离子注入种子的射程分布数据相差甚远.本文根据种子微结构的特点,综合考虑多种因素,设计种子微结构模型和运算程序,用Monte-Carlo仿真不同能量（110 keV,20 keV,200 keV）、不同注量（2×10¹⁶ ions·cm^-2,5×10¹⁶ ions·cm^-2,10¹⁷ ions·cm^-2,2×10¹⁷ ions·cm^-2）的Fe⁺注入花生、彩棉、小麦种子的射程分布,结果显示本设计程序仿真的结果与实验测量数据较为吻合.所获得的注入离子与种子微结构相互作用的随机抽样模拟运算方法,为离子注入与生命体相互作用的理论研究提供新的思路.     

n-Si(As):Yb1130nm四能级发光研究

在n-Si(As):Yb中首次观察到1130nm的尖锐发光.通过掺入Yb的剂量与发光强度的关系以及红外吸收、透射光谱的测量,讨论了敏化剂Yb与激活剂As之间能量传递过程.适当选取Yb与As的浓度比可提高发光效率.     

Damage anneal of antimony/phosphorus double implants in silicon

A method is presented for avoiding the dislocation generation in (100) silicon implanted with phosphorus doses up to 5×10¹⁵ ions/cm² at 50 keV. The residual defects after the damage anneal are considerably reduced if the phosphorus implant is combined with a low dose, e.g. 1×10¹⁴ ions/cm², antimony implant which produces a deeper surface layer of amorphous silicon. It is essential that the phosphorus ions are implanted shallower than the antimony ions, and come to rest within the amorphous layer. Subsequent thermal annealing proceeds by a solid phase epitaxial regrowth mechanism.     

Structural and Chemical Modification in a Polymer by Metal Ion Implantation

Physical and chemical properties changes in a polymer have been studied for polycarbonate (PC) implanted with 100 keV Ni⁺ ions with varying fluence from 1 × 10¹⁴ to 1 × 10¹⁶ ions/cm². The changes in the surface morphology and composition have been observed with atomic force microscopy (AFM) and X-ray diffraction (XRD). The ions implanted induce changes in topography of PC and indicate that the roughness increases dramatically with ion fluence. Implanted metal ions shows direct evidence of compound formation on the surface. The chemical changes in the surface region have been carried out by Raman Spectroscopy and UV-VIS spectroscopy. UV-VIS absorption analysis indicates a drastic decline in optical band gap from 5.46 eV to 1.76 eV at an implanted dose of 1 × 10¹⁶ ions/cm². It could be shown that the partial destruction of chemical bonding under ion implantation leads to the creation of new amorphous and graphite-like structures, which is confirmed by Raman spectroscopy.     

Investigating <Superscript>64</Superscript>Zn<Superscript>+</Superscript> ion-doped silicon under conditions of hot implantation

The results from visualizing the structure and identifying the composition of surface and the nearsurface layers of CZ n-Si (100) implanted by ⁶⁴Zn⁺ ions with dose of 5 × 10¹⁶ cm^–2 and energy of 50 keV under conditions of a substrate heated to 350°C are presented. It is found that there is no Si amorphization after Zn implantation, and only one layer 200 nm thick forms and is damaged because of radiation-induced defects. Zn nanoparticles 10–100 nm in size are found on a sample’s surface and in its near-surface layer. Computer analysis and mapping of the elemental and phase composition of FIB crater walls and the surface show that the main elements (54%) in the sample near-surface layer are Si, O, and Zn. The presence of ZnO phase is recorded to a depth of 20 nm in the sample.     

Swift heavy ion provoked structural, optical and electrical properties in SnO2 thin films

SnO₂ thin films grown on glass substrates at 300 ^°C by reactive thermal evaporation and annealed at 600 ^°C were irradiated by 120 MeV Ag⁹⁺ ions. Though irradiation is known to induce lattice disorder and suppression of crystallinity, we observe grain growth at a certain fluence of irradiation. X-ray diffraction (XRD) revealed the crystalline nature of the films. The particle size estimated by Scherrer’s formula for the irradiated films was in the range 10–25 nm. The crystallite size increases with increase in fluence up to 1×10¹² ions?cm^?2, whereas after that the size starts decreasing. Atomic force microscope (AFM) results showed the surface modification of nanostructures for films irradiated with fluences of 1×10¹¹ ions?cm^?2 to 1×10¹³ ions?cm^?2. The UV–visible spectrum showed the band gap of the irradiated films in the range of 3.56 eV–3.95 eV. The resistivity decreases with fluence up to 5×10¹² ions?cm^?2 and starts increasing after that. Rutherford Backscattering (RBS) reveals the composition of the films and sputtering of ions due to irradiation at higher fluence.     

Microstructural changes in irradiated silica based glasses

High voltage electron microscopy studies have been performed on irradiated pure silica and borosilicate glasses to check their long-term stability when these materials are employed near high energy radioactive sources, such as in fusion reactors and during the storage of nuclear waste. The intense energetic beam of electrons produced by the Harwell 1 MeV microscope, ranging from 10¹⁷ to 10²⁰ e/cm²/s has been focused upon specimens of various composition and impurity content at different temperatures up to about 850°C. Pure silica samples have also been bombarded with 46.5 MeV Ni+6 ions at the Variable Energy Cyclotron. It is found that while no significant changes are detectable in pure irradiated silica, clear evidence is present in complex borosilicate glasses for the growing of large defect clusters (over 1000 Å, resembling gas bubbles) after electron doses of about 8.5 × 10¹⁹ e/cm² and dose rates exceeding 2 × 10¹⁸ e/cm²/sec. Moreover, small regions, about 100 Å wide, scattering electrons more than the matrix are also present. The nature of this fine microstructure has been established as a phase separation into crystalline tridymite. The observations are discussed in terms of their dependence on temperature, sample thickness, dose and dose rates.