Epitaxial heterostructures: side-to-side Si-ZnS, Si-ZnSe biaxial nanowires, and sandwichlike ZnS-Si-ZnS triaxial nanowires

Epitaxial semiconducting heterostructures: side-to-side Si-ZnS, Si-ZnSe biaxial nanowires, and sandwichlike ZnS-Si-ZnS triaxial nanowires were grown via a simple two-stage thermal evaporation of mixed SiO and ZnS or SiO and ZnSe powders under a precise temperature control. Each nanowire had a uniform diameter of 40-120 nm and length ranging from several to several tens of micrometers. Subnanowires of Si, ZnS, and ZnSe within them had a diameter of 20-50, 40-60, and 20-50 nm, respectively. The optical property (nanoscale cathodoluminescence) was also investigated from these new structures. It is proposed that the Si nanowires formed through disproportionation of SiO to Si in the first evaporation stage and then served as one-dimensional nanoscale substrates (or templates) for an epitaxial growth of ZnS or ZnSe nanowires in the following thermal evaporation of ZnS or ZnSe powders. The present results suggest that the simple method might be useful for the synthesis of many other heterostructures containing Si and II-VI or III-V semiconducting composite nanowires to meet the growing demands of nanoscale science and technology.     

Fluoride-assisted synthesis of mullite (Al5.65Si0.35O9.175) nanowires

Novel silicon-deficient mullite (Al5.65Si0.35O9.175) single crystal nanowires were synthesized in large quantities on mica substrates assisted by the intermediate fluoride species. The nanowires have diameters in the range 50-100 nm and typical lengths of several microm. Aligned nanowires were observed at the substrate edge. The nanowires have strong photoluminescence (PL) emission bands at 310, 397, 452 and 468 nm.     

Synthesis and characterization of taper- and rodlike si nanowires on Si(x)Ge(1-x) substrate

Taper- and rodlike Si nanowires (SiNWs) are synthesized successfully on Si and Si(0.8)Ge(0.2) substrates. The growth mechanisms of taper- and rodlike SiNWs are proposed to be oxide-assisted growth (OAG) and vapor-liquid-solid (VLS) growth, respectively. For taperlike SiNWs annealed at 1200 degrees C for 3 h, the emission peaks are found at 772, 478, and 413 nm. On the other hand, for rodlike SiNWs annealed at 1200 degrees C for 4 h, emission peaks are found at 783, 516, and 413 nm. From the field-emission measurements, the taperlike Si nanowires exhibit superior field-emission behavior with a turn-on field of 6.3-7.3 V/mum. The field enhancement, beta, has been estimated to be 700 and 1000 at low and high fields, respectively. The excellent field-emission characteristics are attributed to the perfect crystalline structure and the taperlike geometry of the Si nanowires.     

Phase-controlled growth of metastable Fe5Si3 nanowires by a vapor transport method

We report the synthesis of single-crystalline nanowires (NWs) of metastable Fe5Si3 phase via an iodide vapor transport method. Free-standing Fe5Si3 NWs are grown on a sapphire substrate placed on a Si wafer without the use of any catalyst. The typical size of the Fe5Si3 nanowires is 5-15 microm in length and 100-300 nm in diameter. Synthesis of the metastable phase is induced by composition-dependent nucleation from the gas-phase reaction. Depending on the concentration ratio of FeI2(g) to SiI4(g), different phases of iron silicides are formed. The growth of nanowires is facilitated by the initial nucleation of silicide particles on the substrate and further self-seeded growth of the NWs. The present work not only provides a method for the synthesis of metastable Fe5Si3 nanowires but also suggests that the phase controlled synthesis can be further optimized to produce other metal-rich silicide nanostructures for future spintronic devices.     

Synthesis and Photoluminescence of Amorphous Silicon Oxycarbide Nanowires

Synthesis of amorphous SiCO nanowires was carried out by means of direct current arc discharge. Free-standing SiCO nanowires were deposited on the surface of a graphite crucible without any catalyst and template. The SiCO nanowires were analyzed by XRD, SEM, TEM, XPS, and FTIR. The SiCO nanowires were typically 20—100 μm in length and 10—100 nm in diameter as measured by SEM and TEM. The XPS and FTIR spectroscopy analysis confirmed that the Si atoms share bonds with O and C atoms in mixed SiCO units. The PL spectrum of the SiCO nanowires showed strong and stable white emissions at 454 and 540 nm. A plasma-assisted vapor-solid growth mechanism is proposed to be responsible for the formation of the SiCO nanowires.     

Selective growth of ag nanowires on Si(111) surfaces by electroless deposition

Electroless deposition of Ag on atomically flat H-terminated Si(111) surfaces in aqueous alkaline solutions containing Ag ions produced two different sizes of Ag nanowires along atomic step edges: (1) a narrow nanowire of 10 nm in width and 0.5 nm in height and (2) a wide nanowire of 35 nm in width and 11 nm in height. The narrow and wide nanowires were formed by immersion in the solutions containing less than 1 ppb and 8 ppm dissolved-oxygen concentrations, respectively. This result indicates that the dissolved oxygen initiates the formation of Ag nucleation sites and that the fabrication method has a possibility of controlling the size of Ag nanowires.     

Synthesis and characterization of iron silicon boron (Fe5Si2B) and iron boride (Fe3B) nanowires

Single-crystal iron silicon boron (Fe(5)Si(2)B) and iron boride (Fe(3)B) nanowires were synthesized by a chemical vapor deposition (CVD) method on either silicon dioxide (SiO(2)) on silicon (Si) or Si substrates without introducing any catalysts. FeI(2) and BI(3) were used as precursors. The typical size of the nanowires is about 5-50 nm in width and 1-20 mum in length. Different kinds of Fe-Si-B and Fe-B structures were synthesized by adjusting the ratio of FeI(2) vapor to BI(3) vapor. Single-crystal Fe(5)Si(2)B nanowires formed when the FeI(2) sublimator temperature was kept in the range of 540-570 degrees C. If the FeI(2) sublimator temperature was adjusted in the range of 430-470 degrees C, single-crystal Fe(3)B nanowires were produced. Fe(3)B nanowires grow from polycrystalline Fe(5)SiB(2) particles, while Fe(5)Si(2)B nanowires grow out of the Fe(5)Si(2)B layers, which are attached to triangle shaped FeSi particles. Both the ratio of FeI(2) vapor to BI(3) vapor and the formation of the particles (Fe(5)SiB(2) particles for the growth of Fe(3)B nanowires, FeSi particles for the growth of Fe(5)Si(2)B nanowires) are critical for the growth of Fe(3)B and Fe(5)Si(2)B nanowires. The correct FeI(2) vapor to BI(3) vapor ratio assures the desired phase form, while the particles provide preferential sites for adsorption and nucleation of Fe(3)B or Fe(5)Si(2)B molecules. Fe(3)B or Fe(5)Si(2)B nanowires grow due to the preferred growth direction of <110>.     

In situ generation of the silica shell layer--key factor to the simple high yield synthesis of silver nanowires

a-Silica encapsulated silver nanowires (diameter of 25 +/- 5 nm, average length of 10 mum) have been synthesized by reacting (Me3Si)4Si with AgNO3 in nearly quantitative yield. Formation of the a-silica shell layer (1-3 nm) in situ appears to be one of the most important factors in this simple process.     

氧化银纳米线在官能化二氧化硅颗粒表面的自组装合成

在碱性水醇溶液中, 硝酸银与用3-(2-氨乙基氨丙基)三甲氧基硅烷[N-(2-aminoethyl)-3-aminopropyl-trimethoxy- silane, AMPTS]表面修饰后的二氧化硅胶体颗粒相互作用, 发现所生成的氧化银纳米颗粒可以在二氧化硅颗粒表面自组装为氧化银纳米线. 通过调变反应物中Ag/Si摩尔比, 可对氧化银纳米线的形貌进行调控. 在较小的Ag/Si摩尔比下, 可以得到结构均匀、直径约为50 nm、长度几十微米的氧化银纳米线. 随Ag/Si摩尔比增大, 得到的氧化银纳米线逐渐变短变粗, 且结构变得不均匀. 高分辨透射电镜(HRTEM)显示, 所有的氧化银纳米线均由直径10～20 nm的氧化银颗粒定向堆积而得. 利用透射电镜(TEM)对氧化银纳米线的形成过程进行了观察, 并对氧化银颗粒形成及组装机理进行了探讨.     

Simple method for synthesis of silicon nanowire: Pulsed laser deposition in furnace from p-Si wafer target

Si nanowires (NWs) were fabricated in a vacuum furnace using a Nd:YAG pulsed laser with the wavelength of 325 nm. Commercial p-type Si wafer is used for the target, and no catalytic materials are used. Scanning electron microscopy (SEM) images indicate that the diameters of Si NWs ranged from 10 to 150 nm. Si NWs have various sizes and shapes with a substrate position inside the furnace, and their morphologic construction is reproducible. The formation mechanism of the NWs is discussed.     

A simple large-scale synthesis of very long aligned silica nanowires

A simple method based on the thermal oxidation of Si wafers has been discovered to provide a large-scale synthesis of very long, aligned silica nanowires. The as-grown product was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and photoluminescence. The obtained SiO₂ nanowires had no metal contaminations, ultralong lengths of millimeters, and most diameters of ∼50 nm. The PL spectra of the SiO₂ nanowires showed a strong and stable green emission at 540 nm. The nucleation and growth of the SiO₂ nanowires were investigated.     

Mg掺杂GaN纳米线的结构及其特性

利用类似Delta掺杂技术在硅衬底上沉积Mg:Ga2O3薄膜, 然后在850 ℃下对薄膜进行氨化, 反应后制备出大量Mg掺杂GaN纳米线. 采用扫描电子显微镜(SEM)、X射线衍射(XRD)、傅里叶变换红外(FTIR)光谱和高分辨透射电子显微镜(HRTEM)对样品进行分析.结果表明, Mg掺杂GaN纳米线具有六方纤锌矿单晶结构, 纳米线的直径在30-50 nm范围内, 长度为几十微米.     

Needlelike bicrystalline GaN nanowires with excellent field emission properties

Large-yield and crystalline GaN nanowires have been synthesized on a Si substrate via a simple thermal evaporation process. The majority of the GaN nanowires has bicrystalline structures with a needlelike shape, a triangular prism morphology, and a uniform diameter of approximately 100 nm. Field-emission measurements show that the bicrystalline GaN nanowires with sharp tips have a lower turn-on field of approximately 7.5 V/microm and are good candidates for low-cost and large-area electron emitters. It is believed that the excellent filed emission property is attributed to the bicrystalline structure defects and sharp tips.     

Temperature-controlled growth of ZnO nanowires and nanoplates in the temperature range 250-300 degrees C

Starting from a mixture of Zn and BiI3, we grew nanowires and nanoplates on an oxidized Si substrate at relatively low temperatures of 250 and 300 degrees C, respectively. The ZnO nanowires had diameters of approximately 40 nm and grew along the [110] direction rather than the conventional [0001] direction. The nanoplates had thicknesses of approximately 40 nm and lateral dimensions of 3-4 microm. The growth of both the nanowires and nanoplates is dominated by the synergy of vapor-liquid-solid (VLS) and direction conducting. Analysis of photoluminescence spectra suggested that the nanoplates contain more oxygen vacancies and have higher surface-to-volume ratios than the nanowires. The present results clearly demonstrate that the shapes of ZnO nanostructures formed by using BiI3 can be controlled by varying the temperature in the range 250-300 degrees C.     

One-step fabrication of uniform Si-core/CdSe-sheath nanocables

A simple one-step thermal evaporation of CdSe powder using Si substrate at controlled conditions results in ultrauniform Si-core/CdSe-sheath nanocables. These nanocables are approximately 80 nm in diameter and several tens of micrometers in length. Detailed microstructure and chemical composition analysis of the nanocables indicates that they are composed of a single crystalline Si (cubic) core and CdSe (hexagonal) sheath. The experimental evidence suggested that the Si nanowires can be directly grown from the Si substrate via an oxide-assisted growth mechanism and further served as templates for CdSe, resulting in nanocable heterostructures.     

利用Pd催化合成单晶GaN纳米线的光学特性(英文)

基于金属元素钯具有的催化特性,采用射频磁控溅射方法,在Si(111)衬底上沉积Pd:Ga2O3薄膜,然后在950℃下对薄膜进行氨化,制备出大量GaN纳米线.采用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等技术手段对样品的结构、形貌和成分进行分析.结果表明,制备的样品为具有六方纤锌矿结构的单晶GaN纳米线,直径在20-60nm范围内,长度为几十微米,表面光滑无杂质,结晶质量较高.用光致发光光谱对样品的发光特性进行测试,分别在361.1、388.6和426.3nm处出现三个发光峰,且与GaN体材料相比近带边紫外发光峰发生了较弱的蓝移.对GaN纳米线的生长机制也进行了简单的讨论.     

Template assisted electrodeposition of germanium and silicon nanowires in an ionic liquid

In this paper we report for the first time on the room temperature template synthesis of germanium and silicon nanowires by potentiostatic electrochemical deposition from the air- and water stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([Py(1,4)]Tf(2)N) containing GeCl(4) and SiCl(4) as a Ge and Si source, respectively. Commercially-available track-etched polycarbonate membranes (PC) with an average nominal pore diameter of 90-400 nm were used as templates. Ge and Si nanowires with an average diameter corresponding to the nanopores' diameter and lengths of a few micrometres were reproducibly obtained. Structural characterization of the nanowires was performed by EDX, TEM, HR-SEM and Raman spectroscopy. Despite the rough surface of the nanowires, governed mostly by the original shape of the nanopore's wall of the commercially-available PC membrane, preliminary structural characterizations demonstrate the promising prospective of this innovative elaboration process compared to constraining high vacuum and high temperature methods.     

Cu Nanoparticles on TiN by Electroless Deposition: Surface‐Mediated Diameter Control and Application to Si Nanowires Growth

Cu Nanoparticles on TiN coated silicon substrates were prepared from well‐defined molecular precursors [CuO^t Bu]₄ in non‐aqueous solutions. The formation of nanoparticles takes place via galvanic displacement and allows for the formation of narrowly distributed Cu nanoparticles with controlled size ranging from 8 to 35 nm through the control of the oxidation state of the TiN surface. The activity of these nanoparticles arrays in low temperature Si nanowires growth by the vapor‐solid‐solid mechanism was also investigated and larger Cu nanoparticles were found to yield higher Si nanowires density.     

Hematite/Si nanowire dual-absorber system for photoelectrochemical water splitting at low applied potentials

Hematite (α-Fe(2)O(3)) was grown on vertically aligned Si nanowires (NWs) using atomic layer deposition to form a dual-absorber system. Si NWs absorb photons that are transparent to hematite (600 nm < λ < 1100 nm) and convert the energy into additional photovoltage to assist photoelectrochemical (PEC) water splitting by hematite. Compared with hematite-only photoelectrodes, those with Si NWs exhibited a photocurrent turn-on potential as low as 0.6 V vs RHE. This result represents one of the lowest turn-on potentials observed for hematite-based PEC water splitting systems. It addresses a critical challenge of using hematite for PEC water splitting, namely, the fact that the band-edge positions are too positive for high-efficiency water splitting.     

Metallic single-crystal CoSi nanowires via chemical vapor deposition of single-source precursor

We report the synthesis, structural characterization, and electrical transport properties of free-standing single-crystal CoSi nanowires synthesized via a single-source precursor route. Nanowires with diameters of 10-150 nm and lengths of greater than 10 mum were synthesized through the chemical vapor deposition of Co(SiCl(3))(CO)(4) onto silicon substrates that were covered with 1-2 nm thick SiO(2). Transmission electron microscopy confirms the single-crystal structure of the cubic CoSi. X-ray absorption and emission spectroscopy confirm the chemical identity and show the expected metallic nature of CoSi, which is further verified by room-temperature and low-temperature electrical transport measurements of nanowire devices. The average resistivity of CoSi nanowires is found to be about 510 muOmega cm. Our general and rational nanowire synthesis approach will lead to a broad class of silicide nanowires, including those metallic materials that serve as high-quality building blocks for nanoelectronics and magnetic semiconducting Fe(1-x)Co(x)Si suitable for silicon-based spintronics.