主动抛光盘磨制非球面的工艺与面形检测

主动抛光盘技术特别适用于磨制焦比大的深度非球面,能够根据需要对抛光盘面实时地主动变形成偏轴非球面来磨制非球面镜面。它具有较高的磨削速率和较大范围内的自然平滑(无切带)。用计算机控制磨制,可以像加工球面一样来加工一个深度的非球面。介绍了用国内首次研制成功的主动抛光盘对加工直径910mm、焦比F/2的抛物面镜的工艺方法的初步探讨,并给出了抛物面镜的检验方案和检测结果。     

一种大口径大非球面度天文镜面磨制新技术

主动抛光盘技术是近年来因天文望远镜的口径越来越大,焦比越来越快而发展起来的一种能够根据需要将抛光盘面实时地主动变形成偏轴非球面来磨制大口径非球面度高精度天文镜面的磨制技术。非球面表面的曲率不仅各点不一致,而且同一点的径向与切向曲率也不相同,所以经典的大的抛光盘不可能使其表面形状始终与所接触的非球面表面形状相吻合;常用的小磨盘抛光的致命缺点是解决不了高频切带,抛光效率也低。而主动抛光盘技术正好解决这些难题。与传统方法相比,它具有较高的磨削速率和较大范围内的自然平滑(无切带)。这是一种用计算机控制的磨镜技术,通过它可以像加工球面一样来加工一个深度的非球面。介绍了我国成功研制的主动抛光盘以及它在直径910mm,焦比F／2抛物面镜加工中的成功应用和加工的结果,以及此项技术将在2m以上直径天文镜面,特别是30m巨型天文光学／红外望远镜的分块子镜磨制中的应用前景。     

Accelerated and Noise‐Resistant Protocol of Dissipation‐Based Knill–Laflamme–Milburn State Generation with Lyapunov Control

A protocol to generate steady Knill–Laflamme–Milburn (KLM) states of two Rydberg atoms with dissipation and Lyapunov control is proposed. Herein, combining with the quantum Zeno dynamics and the Rydberg antiblockade, a unique and steady solution of the master equation of the system is obtained, which satisfies the definition of KLM states. Furthermore, to polish the convergence rate, well‐designed additional coherent control (ACC) fields with Lyapunov control are added into the traditional dissipation process. Numerical simulation reveals that the steady target state generation is prominently accelerated and the protocol is robust against the stochastic noise errors caused by laser fields. It is hoped that the work may provide an alternative protocol to polish the generation of entanglement.     

化学气相沉积SiC材料超光滑表面纳米加工

 利用传统光学加工方法，采用陶瓷磨盘和金刚石微粉对国产化学气相沉积(CVD) SiC进行了粗磨、细磨加工；然后，利用颗粒直径从4 μm到1 μm的金刚石研磨膏逐级进行抛光，发现SiC表面存在纳米级划痕；最后，改用颗粒直径为20 nm氧化铝纳米颗粒的碱性水溶液进行抛光，表面粗糙度达到0.6 nm(RMS)，表面纳米级划痕得到很好改善，获得了较高表面质量的超光滑表面。     

主动抛光盘面形测试技术的研究

主动抛光盘技术是新发展起来的一种能够根据需要将抛光盘面实时地主动变形成离轴非球面来磨制深非球度高精度天文镜面的磨制技术。简单介绍了抛光盘变形控制结构和面形检测机构，对深非球面度面形变形进行了精度分析，探讨了主动抛光盘的动态响应和校正，并对抛光盘的改造提出了一些建议。     

中小口径双非球面数控抛光技术研究

针对口径Φ62 mm双凸非球面透镜,进行了数控研磨和抛光技术研究.提出了规范性的加工工艺流程,实现了中小口径双非球面元件的高效、快速抛光.根据计算机控制光学表面成型技术,采用全口径抛光和小抛头修抛的两步抛光法,在抛光中对其面形误差进行多次反馈补偿,使被加工零件表面的面形精度逐步收敛.最终两面的面形精度均小于0.5 μm,中心偏差小于0.01 mm,满足了光学系统中对非球面元件的精度要求,并且在保证有较高面形精度和较好表面光洁度的同时,解决了双非球面中心偏差和中心厚度难以控制的加工技术难题.     

超光滑表面的形成与抛光时间之间的关系研究

由于加工超光滑表面的古典法对加工者的经验要求较高,而且不同的加工者对抛光时间长短的控制也有较大的差别,因而下盘时机的准确判断将会对超光滑表面的加工质量产生严重的影响。为此,对所加工的全反射棱镜的超光滑表面抛光不同的时间,并在全反射条件下,根据全反射棱镜背向散射光斑的大小和亮暗的程度来判断所加工超光滑表面加工质量的检测方法,最终给出超光滑表面的抛光质量随抛光时间的变化。在实验结果的基础上得出了抛光质量随抛光时间交替变化的基本规律,并根据加工经验总结出了超光滑表面加工过程中的注意事项和判断下盘时机的基本方法。     

Optical testing of hard disks

A device and methodology for surface testing of hard disk blanks are presented. A beam of laser light is scanned in a spiral pattern across the disk, and surface defects are diagnosed from the modulation of the scattered light. Since acceptable polish marks also scattered significant levels of light, it was necessary to make use of the directional characteristics of the scattered light in the disk test device.     

Characterization of Index and Surface-Relief Gratings Formed in Methacrylate Photopolymers

We report on an experimental investigation of the dual (index and surface-relief) grating formation in methacrylate photopolymers in the green. It is found that the dynamics of the diffracted signal from high spatial frequency dual gratings recorded in a thin film sample is mainly determined by the evolution of the volume index grating and is strongly dependent on writing intensities. Low spatial frequency dual gratings recorded in a bulk sample are also investigated. Depth profile and magnitude of the index grating are estimated quantitatively from the diffraction efficiency as a function of polish depth from the bulk sample’s surface. It is confirmed that the surface-relief grating is dominant in the light diffraction from the bulk sample.     

磁流变技术研究及其在光学加工中的应用

介绍了磁流变技术的基本原理及其应用。利用磁流变液在磁场作用下形成的高剪切应力,可以利用磁场形成可变硬度的磁流变液对光学零件进行可控的抛光加工。美国Rochester大学率先进行了应用磁流变液对光学零件进行抛光方面的研究。磁流变抛光获得的表面具有纳米级表面粗糙度。     

Diamond. Part 1

In this, the first of two articles on diamond, a review is given of its hardness, its sources, its fabrication and of many of its uses as a technological material. Some examples of etched diamond surfaces, growth features, surface polish and percussion marks are illustrated. The history of man-made diamonds is briefly reviewed.

In part 2, which will follow later, aspects to be treated will include absorption spectra, semi-conductivity, diamond counters and irradiation defects.     

自适应模糊控制器在光学透镜抛光中的应用

根据抛光机压力、摆幅和摆角对光学透镜磨抛加工质量的影响程度不同，应用模糊逻辑系统表格查询学习算法，构建了一种二维自适应模糊控制器，为抛光工艺的深入探讨奠定了基础。     

Parallel fabrication of silicon concave microlens array by femtosecond laser irradiation and mixed acid etching

A method of multi-beam femtosecond laser irradiation combined with modified HF-HNO_3-CH_3 COOH etching is used for the parallel fabrication of all-silicon plano-concave microlens arrays(MLAs). The laser beam is split by a diffractive optical element and focused by a lens to drill microholes parallely on silicon. An HF-HNO_3-H_2SO_4-CH_3 COOH solution is used to expand and polish laser-ablated microholes to form microlenses. Compared with the HF-HNO_3-CH_3 COOH solution,the solution with H_2SO_4 can effectively reduce the etched surface roughness. The morphologies of MLAs at different laser powers and pulse numbers are observed. The image array formed by the silicon microlenses is also demonstrated.     

纳米级面形精度光学平面镜加工

为实现纳米级面形精度光学平面镜的高效精密抛光,提出了一种由传统环带抛光技术和先进离子束抛光技术相结合的组合式加工方法。介绍了环带抛光技术和离子束抛光技术的原理,通过实验研究了离子束抛光的材料去除函数,并采用这种组合抛光方法对口径为150 mm的平面镜进行抛光,抛光后平面镜的面形误差和表面粗糙度分别达到1.217 nm RMS和0.506 nm RMS。实验结果表明,这种组合抛光技术适合纳米级面形精度光学平面镜的加工。     

短程透镜的损耗

本文讨论了引起短程透镜损耗的各种因素,用最优边缘卷边曲率半径和表面抛光的方法成功地降低了短程透镜的损耗,给出了短程透镜的损耗测量值.     

大口径碳化硅反射镜面PVD改性工艺的研究

通过将多块不同尺寸的碳化硅平面试片以及一块口径为520mm碳化硅凹非球面反射镜作为镜面改性工艺技术的实验平台,对大口径碳化硅反射镜面PVD改性工艺技术进行探索、分析和研究。重点研究了前期PVD改性前镜面特性与PVD改性层的最佳匹配关系,主要是PVD改性层与镜面粗糙度和残留面形误差的要求和最佳结合点。采用的抛光方式为磨盘相对镜体做行星运动,采用相同的离子束辅助沉积法进行凹椭球面碳化硅反射镜的镜面改性。实验结果表明:通过选用合适的方案对改性后的PVD改性层镜面的面形误差进行修抛,可同时提高其镜面光洁度和粗糙度,最终测试结果为0.756　nm（Sq）,与改性前比较,粗糙度得到一定程度的提高。     

Contribution a la theorie atomique de la diffusion chimique

Here we present an analysis and a development of the atomic theory of chemical diffusion as proposed by Manning for a binary system a/b.The general expression for the flux of a tracer in a concentration gradient is first established. This expression of the flux is identified with that deduced in the phenomenological theory. Thus a relationship between the partial correlation factors of vacancies with each of the a and b species is obtained.The effect of “vacancy flow” can be described in terms of these correlation factors. Thus the vacancy flow on species A leads to a correlation of the vacancy jumps with species B and vice versa.We shall see that the Nernst-Einstein equation can be extended to the case of chemical diffusion and that the ratio of the intrinsic diffusion coefficients is equal to the ratio of the mean jump frequencies W_A and W_B.Also, the activation energies of intrinsic diffusion coefficients are related very simply to the activation enthalpies of atomic jumps.In conclusion, we shall see that chemical diffusion in a binary system a/b can be completely described if either the thermodynamic factor and the coefficients of self diffusion, or the thermodynamic factor and the coefficients of intrinsic diffusion are known as functions of the concentration.     

Sur la restitution du signe de la phase en interferometrie

Phase variations are transformed into intensity variations by means of interferometry. It is then possible to form a visible image of a pure phase object. But then information on the sign of the phase or the direction of surface relief is lost. Principles of a method for extracting only the imaginary part of the complex amplitude of the object, which is an odd function of the phase, are studied. From this it is possible to obtain the sign of the phase.     

磁流变抛光材料去除的研究

磁流变抛光是近十年来的一种新兴的先进光学制造技术 ,它利用磁流变抛光液在梯度磁场中发生流变而形成的具有粘塑行为的柔性“小磨头”进行抛光。被抛光光学元件的材料去除是在抛光区内实现的。首先简要阐述了磁流变抛光的抛光机理 ,然后利用标准磁流变抛光液进行抛光实验。研究了磁流变抛光中几种主要工艺参数对抛光区的大小和形状以及材料去除率的影响情况。最后给出了磁流变抛光材料去除的规律。     

Investigation of surface and sub-surface defects on polished InP substrates using auger electron spectroscopy coupled to argon ion sputtering

We show that Auger electron spectroscopy (AES) analysis in combination with in-situ observations in secondary electron (SE) mode alternating with argon ion sputtering (for example, in steps of 60 Å) can be successfully employed to detect and identify surface and sub-surface ( 1000 Å) defects on InP substrates. The case of a “ready-to-use” S-doped InP substrate is considered here as an example. Two sorts of defects classified as extrinsic and intrinsic have been detected. The former defects are identified as the impregnated particles of the polishing materials since they contained exclusively elements such as Ca, Cl, etc., the constituents of polish agents. The latter defects present at a low density, on the other hand, are presumed to have been generated in the crystal growth process since they are revealed by ion etching in the sub-surface region and contained excess of S dopant in some cases, and O in other cases in the form of In₂O₃.